Specifications
| Type | Description |
|---|---|
| Part Number | 1N4148W |
| Manufacturer | Vishay |
| Product Type | Switching Diode |
| Category | Power Devices |
| Package / Case | SOD-123; body dimensions shown include 3.7 ± 0.15 mm length, 2.7 ± 0.15 mm width, 1.55 ± 0.15 mm height |
| Diode Technology | Silicon epitaxial planar diode |
| Circuit Configuration | Single |
| Reverse Voltage | 75 V; Tamb = 25°C unless otherwise specified |
| Repetitive Peak Reverse Voltage | 100 V; Tamb = 25°C unless otherwise specified |
| Average Rectified Current | 250 mA; half-wave, f>=50 Hz, infinite heatsink |
| Continuous Forward Current | 300 mA; infinite heatsink |
| Surge Forward Current | 2 A; tp=1 us |
| Power Dissipation | 280 mW; on FR-4, Tamb=25°C |
| Moisture Sensitivity Level | MSL 1; per J-STD-020 |
| Soldering Peak Temperature | 260°C max |
| Junction Temperature | 150°C |
| Storage Temperature Range | -65 to +150°C |
| Forward Voltage | 1 V max; IF=10 mA |
| Diode Capacitance | 1.5 pF max |
| Reverse Recovery Time | 4 ns max |
| Datasheet Status | request_only |
Product Overview
The Vishay 1N4148W is a small signal fast switching diode built with silicon epitaxial planar diode technology. The device is specified as a single diode and uses the AH marking in the parts table. Electrical ratings include 75 V reverse voltage and 100 V repetitive peak reverse voltage at Tamb = 25°C unless otherwise specified.
Forward-current capability is defined as 300 mA continuous forward current with an infinite heatsink, plus 250 mA average rectified current under half-wave rectification with resistive load at f >= 50 Hz. Surge forward current is rated at 500 mA for tp < 1 s and 2 A for tp = 1 us, both with infinite heatsink conditions.
The SOD-123 package has listed body dimensions of 3.7 ± 0.15 mm by 2.7 ± 0.15 mm by 1.55 ± 0.15 mm and a package weight of 10.6 mg. Assembly data includes UL 94 V-0 molding compound, MSL 1 according to J-STD-020, and 260°C maximum soldering peak temperature.
Switching and signal behavior are specified by 4 ns maximum reverse recovery time, 1.5 pF maximum diode capacitance, and 2.5 V maximum voltage rise when switching on. These facts support use in fast signal switching, pulse circuits, and compact surface-mount diode placements.
Key Features
- Silicon epitaxial planar diode construction
- Single diode circuit configuration
- SOD-123 package
- 75 V reverse voltage rating
- 100 V repetitive peak reverse voltage
- 300 mA continuous forward current
- 4 ns maximum reverse recovery time
- 1.5 pF maximum diode capacitance
- MSL 1 per J-STD-020
- 260°C max soldering peak temperature
Typical Applications
- Fast signal switching circuits
- Pulse switching networks
- Small-signal diode routing
- Compact surface-mount assemblies
- Low-capacitance signal paths
- General diode clamping circuits
Procurement Notes
When requesting a quote for 1N4148W, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of diode is the Vishay 1N4148W?
The 1N4148W is specified as a small signal fast switching diode using silicon epitaxial planar diode technology.
What package is used for the 1N4148W?
The device is supplied in a SOD-123 package with dimensions 3.7 ± 0.15 mm length, 2.7 ± 0.15 mm width, and 1.55 ± 0.15 mm height.
What are the main voltage and current ratings?
At 25°C, the diode has 75 V reverse voltage and 100 V repetitive peak reverse voltage. Current ratings include 300 mA continuous forward current.
What switching performance is specified?
Reverse recovery time is 4 ns maximum at IF=10 mA, iR=1 mA, VR=6 V, RL=100 ohm.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 28, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.