Specifications
| Type | Description |
|---|---|
| Part Number | CSD16325Q5 |
| Manufacturer | Texas Instruments |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package Case | VSON-CLIP (DQH), 8 pins, SON/VSON 5 mm x 6 mm, 1.05 mm max height |
| Drain-to-Source Voltage | 25 V |
| Gate-to-Source Voltage | +10 / -8 V |
| Continuous Drain Current | 100 A |
| Continuous Drain Current | 30 A |
| Pulsed Drain Current | 200 A |
| Power Dissipation | 3.1 W |
| Operating Junction and Storage Temperature Range | -55 to 150 °C |
| Avalanche Energy, Single Pulse | 500 mJ |
| Drain-to-Source Breakdown Voltage | min 25 V |
| Drain-to-Source Leakage Current | max 1 uA |
| Gate-to-Source Leakage Current | max 100 nA |
| Gate-to-Source Threshold Voltage | min 0.9 V, typ 1.1 V, max 1.4 V |
| Drain-to-Source On Resistance | typ 2.1 mOhm, max 2.9 mOhm |
| Drain-to-Source On Resistance | typ 1.7 mOhm, max 2.2 mOhm |
| Drain-to-Source On Resistance | typ 1.5 mOhm, max 2 mOhm |
| Transconductance | typ 159 S |
| Input Capacitance | typ 3070 pF, max 4000 pF |
| Output Capacitance | typ 2190 pF, max 2850 pF |
| Reverse Transfer Capacitance | typ 120 pF, max 150 pF |
| Series Gate Resistance | typ 1.6 ohm, max 3.2 ohm |
| Total Gate Charge | typ 18 nC, max 25 nC |
| Gate-to-Drain Charge | typ 3.5 nC |
| Gate-to-Source Charge | typ 6.6 nC |
| Gate Charge at Threshold | typ 3.3 nC |
| Output Charge | typ 43 nC |
| Turn-On Delay Time | typ 10.5 ns |
| Rise Time | typ 16 ns |
| Turn-Off Delay Time | typ 32 ns |
| Fall Time | typ 12 ns |
| Diode Forward Voltage | typ 0.8 V, max 1 V |
| Reverse Recovery Charge | typ 63 nC |
| Reverse Recovery Time | typ 47 ns |
| Thermal Resistance Junction-to-Case | typ 1 °C/W |
| Thermal Resistance Junction-to-Ambient | typ 50 °C/W |
| Maximum Junction-to-Ambient Thermal Resistance | 126 °C/W |
| Package Quantity and Carrier | 2500 units, large tape and reel |
| Lead Finish | SN |
| MSL Rating / Peak Reflow | Level-1-260C-UNLIM |
| Orderable Operating Temperature | -55 to 150 °C |
| Part Marking | CSD16325 |
| Datasheet Status | request_only |
Product Overview
CSD16325Q5 is a Texas Instruments N-channel power MOSFET for Power_Management designs. The device is specified with a 25 V drain-to-source absolute maximum rating and +10 / -8 V gate-to-source voltage rating at TA=25°C. Current ratings include 100 A continuous drain current at TC=25°C, 30 A continuous drain current at TA=25°C on the specified 1 in² 2-oz copper pad, and 200 A pulsed drain current for pulses up to 300 us at up to 2% duty cycle.
Electrical characteristics are defined across common gate-drive conditions. Drain-to-source on resistance is 2.1 mOhm typical at VGS=3 V, 1.7 mOhm typical at VGS=4.5 V, and 1.5 mOhm typical at VGS=8 V, each at ID=30 A. Gate charge is specified as 18 nC typical at VGS=4.5 V, VDS=12.5 V, and IDS=30 A.
The package is VSON-CLIP (DQH), 8 pins, SON/VSON 5 mm x 6 mm, with 1.05 mm maximum height. Assembly and ordering facts include 2500 units on large tape and reel, SN lead finish, Level-1-260C-UNLIM MSL / peak reflow classification, and CSD16325 part marking.
Key Features
- 25 V drain-to-source absolute maximum rating
- 100 A continuous drain current at TC=25°C
- 200 A pulsed drain current under specified pulse limits
- RDS(on) down to 1.5 mOhm typical at 8 V gate drive
- 18 nC typical total gate charge at 4.5 V
- 10.5 ns typical turn-on delay with 2 ohm gate resistance
- VSON-CLIP 5 mm x 6 mm, 8-pin package
- -55 to 150°C junction and storage temperature range
- 500 mJ single-pulse avalanche energy rating
- Level-1-260C-UNLIM MSL / peak reflow classification
Typical Applications
- Low-voltage power switching
- Compact power management stages
- Synchronous rectification circuits
- High-current board-level switching
- Gate-driven MOSFET switching designs
- Thermally managed FR4 power layouts
Procurement Notes
When requesting a quote for CSD16325Q5, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the CSD16325Q5?
CSD16325Q5 is an N-channel power MOSFET from Texas Instruments in the Power_Management category. It is supplied in an 8-pin VSON-CLIP (DQH) SON/VSON package measuring 5 mm x 6 mm.
What voltage and current ratings are specified?
The drain-to-source absolute maximum rating is 25 V at TA=25°C. Continuous drain current is specified as 100 A at TC=25°C and 30 A at TA=25°C on the stated 1 in² 2-oz copper pad.
What on-resistance values are provided in the datasheet facts?
At ID=30 A, drain-to-source on resistance is 2.1 mOhm typical at VGS=3 V, 1.7 mOhm typical at VGS=4.5 V, and 1.5 mOhm typical at VGS=8 V.
What package and assembly details are listed?
The package is VSON-CLIP (DQH), 8 pins, SON/VSON 5 mm x 6 mm, with 1.05 mm maximum height. Orderable parts are listed with 2500 units on large tape and reel, SN lead finish, and part marking CSD16325.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.