Specifications
| Type | Description |
|---|---|
| Part Number | CSD18533KCS |
| Manufacturer | Texas Instruments |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-220 plastic package (KCS), 3 pins |
| Drain-to-source voltage | 60 V; Product summary, TA=25°C typical value |
| Gate charge total | 28 nC; VGS=10 V, product summary |
| Gate charge gate-to-drain | 3.9 nC; Product summary |
| Drain-to-source on-resistance | 6.9 mΩ; VGS=4.5 V, product summary |
| Drain-to-source on-resistance | 5.0 mΩ; VGS=10 V, product summary |
| Threshold voltage | 1.9 V; Product summary |
| Drain-to-source voltage absolute maximum | 60 V; TA=25°C |
| Gate-to-source voltage absolute maximum | ±20 V; TA=25°C |
| Continuous drain current | 100 A; Package limited, TA=25°C |
| Continuous drain current | 118 A; Silicon limited, TC=25°C |
| Continuous drain current | 84 A; Silicon limited, TC=100°C |
| Pulsed drain current | 294 A; Max RθJC=0.8°C/W, pulse duration ≤100 µs, duty cycle ≤1% |
| Power dissipation | 192 W; TA=25°C |
| Operating junction temperature | -55 to 175 °C; Absolute maximum ratings |
| Storage temperature | -55 to 175 °C; Absolute maximum ratings |
| Avalanche energy single pulse | 135 mJ; ID=52 A, L=0.1 mH, RG=25 Ω |
| Drain-to-source breakdown voltage | Min 60 V; VGS=0 V, ID=250 µA, TA=25°C |
| Drain-to-source leakage current | Max 1 µA; VGS=0 V, VDS=48 V, TA=25°C |
| Gate-to-source leakage current | Max 100 nA; VDS=0 V, VGS=20 V, TA=25°C |
| Gate-to-source threshold voltage | Min 1.5 V, Typ 1.9 V, Max 2.3 V; VDS=VGS, ID=250 µA, TA=25°C |
| Drain-to-source on-resistance | Typ 6.9 mΩ, Max 9.0 mΩ; VGS=4.5 V, ID=75 A, TA=25°C |
| Drain-to-source on-resistance | Typ 5.0 mΩ, Max 6.3 mΩ; VGS=10 V, ID=75 A, TA=25°C |
| Transconductance | Typ 150 S; VDS=30 V, ID=75 A, TA=25°C |
| Input capacitance | Typ 2420 pF, Max 3025 pF; VGS=0 V, VDS=30 V, f=1 MHz, TA=25°C |
| Output capacitance | Typ 300 pF, Max 375 pF; VGS=0 V, VDS=30 V, f=1 MHz, TA=25°C |
| Reverse transfer capacitance | Typ 7 pF, Max 9.1 pF; VGS=0 V, VDS=30 V, f=1 MHz, TA=25°C |
| Series gate resistance | Typ 1.4 Ω, Max 2.8 Ω; TA=25°C |
| Gate charge total | Typ 14 nC, Max 17 nC; VGS=4.5 V, VDS=30 V, ID=75 A, TA=25°C |
| Gate charge total | Typ 28 nC, Max 34 nC; VGS=10 V, VDS=30 V, ID=75 A, TA=25°C |
| Gate charge gate-to-drain | Typ 3.9 nC; VDS=30 V, ID=75 A, TA=25°C |
| Gate charge gate-to-source | Typ 9.4 nC; VDS=30 V, ID=75 A, TA=25°C |
| Gate charge at threshold voltage | Typ 4.6 nC; VDS=30 V, ID=75 A, TA=25°C |
| Output charge | Typ 31 nC; VDS=30 V, VGS=0 V, TA=25°C |
| Turn-on delay time | Typ 5.7 ns; VDS=30 V, VGS=10 V, IDS=75 A, RG=0 Ω, TA=25°C |
| Rise time | Typ 4.8 ns; VDS=30 V, VGS=10 V, IDS=75 A, RG=0 Ω, TA=25°C |
| Turn-off delay time | Typ 13 ns; VDS=30 V, VGS=10 V, IDS=75 A, RG=0 Ω, TA=25°C |
| Fall time | Typ 3.2 ns; VDS=30 V, VGS=10 V, IDS=75 A, RG=0 Ω, TA=25°C |
| Diode forward voltage | Typ 0.8 V, Max 1 V; ISD=75 A, VGS=0 V, TA=25°C |
| Reverse recovery charge | Typ 97 nC; VDS=30 V, IF=75 A, di/dt=300 A/µs, TA=25°C |
| Reverse recovery time | Typ 49 ns; VDS=30 V, IF=75 A, di/dt=300 A/µs, TA=25°C |
| Junction-to-case thermal resistance | Max 0.8 °C/W; TA=25°C unless otherwise stated |
| Junction-to-ambient thermal resistance | Max 62 °C/W; TA=25°C unless otherwise stated |
| Orderable package quantity | 50; CSD18533KCS, tube media |
| Package carrier | Tube; CSD18533KCS ordering information |
| Operating temperature range | -55 to 175 °C; Package option addendum for CSD18533KCS and CSD18533KCS.B |
| Part marking | CSD18533KCS; Package option addendum |
| Datasheet Status | request_only |
Product Overview
CSD18533KCS is a Texas Instruments N-channel power MOSFET listed in the Power_Management category. It uses a TO-220 plastic package, KCS, with 3 pins, and is supplied in tube media with an orderable package quantity of 50. The package option addendum lists the part marking as CSD18533KCS and the operating temperature range as -55 to 175°C.
Electrical limits include 60 V drain-to-source voltage, ±20 V gate-to-source absolute maximum voltage, and -55 to 175°C operating junction and storage temperature ranges. Continuous drain current ratings are 100 A package-limited at TA=25°C, 118 A silicon-limited at TC=25°C, and 84 A silicon-limited at TC=100°C. Pulsed drain current is specified as 294 A for pulse duration ≤100 µs and duty cycle ≤1%.
For conduction and switching analysis, the datasheet specifies 5.0 mΩ typical and 6.3 mΩ maximum on-resistance at VGS=10 V, ID=75 A, TA=25°C, and 6.9 mΩ typical and 9.0 mΩ maximum at VGS=4.5 V. Gate charge is 28 nC typical at VGS=10 V and 14 nC typical at VGS=4.5 V, with switching times specified under VDS=30 V, VGS=10 V, IDS=75 A, and RG=0 Ω.
Key Features
- 60 V drain-to-source voltage rating
- 5.0 mΩ typical RDS(on) at VGS=10 V
- 6.9 mΩ typical RDS(on) at VGS=4.5 V
- 100 A package-limited continuous drain current at TA=25°C
- 294 A pulsed drain current under specified pulse conditions
- 28 nC typical total gate charge at VGS=10 V
- 1.9 V typical gate-to-source threshold voltage
- TO-220 plastic KCS package with 3 pins
- -55 to 175°C operating temperature range
- Max 0.8°C/W junction-to-case thermal resistance
Typical Applications
- Power management switching stages
- Low-voltage DC power paths
- High-current MOSFET switching
- TO-220 through-hole power assemblies
- Gate-drive evaluated power circuits
- Body-diode conduction applications
Procurement Notes
When requesting a quote for CSD18533KCS, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of component is CSD18533KCS?
CSD18533KCS is an N-channel power MOSFET from Texas Instruments in the Power_Management category. The extracted package data identifies it as a 3-pin TO-220 plastic KCS package.
What voltage and current ratings are specified?
The device has a 60 V drain-to-source rating and a ±20 V gate-to-source absolute maximum rating. Continuous drain current is listed as 100 A package-limited at TA=25°C and 118 A silicon-limited at TC=25°C.
What on-resistance values are listed for this MOSFET?
At VGS=10 V and ID=75 A, drain-to-source on-resistance is 5.0 mΩ typical and 6.3 mΩ maximum. At VGS=4.5 V and ID=75 A, it is 6.9 mΩ typical and 9.0 mΩ maximum.
What package and ordering information is provided?
CSD18533KCS is supplied in a TO-220 plastic KCS package with 3 pins. The ordering facts list tube media, an orderable package quantity of 50, and part marking CSD18533KCS.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.