CSD18533KCS N-Channel Power MOSFET

Texas Instruments Power_Management — specifications, applications, sourcing support and RFQ.

CSD18533KCS N-Channel Power MOSFET

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Part Number
CSD18533KCS
Manufacturer
Texas Instruments
Package
TO-220 plastic package (KCS), 3 pins
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

CSD18533KCS from Texas Instruments is an N-channel power MOSFET in a 3-pin TO-220 plastic KCS package for Power_Management designs. The device is rated for 60 V drain-to-source voltage and supports low on-resistance operation, with 5.0 mΩ typical at VGS=10 V and 6.9 mΩ typical at VGS=4.5 V. Key switching parameters include 28 nC typical total gate charge at VGS=10 V, 3.9 nC typical gate-to-drain charge, and 1.9 V typical threshold voltage. Current ratings include 100 A package-limited continuous drain current at TA=25°C and 294 A pulsed drain current under specified pulse conditions.

Specifications

TypeDescription
Part NumberCSD18533KCS
ManufacturerTexas Instruments
Product TypeLDO Regulator
CategoryPower Management
Package / CaseTO-220 plastic package (KCS), 3 pins
Drain-to-source voltage60 V; Product summary, TA=25°C typical value
Gate charge total28 nC; VGS=10 V, product summary
Gate charge gate-to-drain3.9 nC; Product summary
Drain-to-source on-resistance6.9 mΩ; VGS=4.5 V, product summary
Drain-to-source on-resistance5.0 mΩ; VGS=10 V, product summary
Threshold voltage1.9 V; Product summary
Drain-to-source voltage absolute maximum60 V; TA=25°C
Gate-to-source voltage absolute maximum±20 V; TA=25°C
Continuous drain current100 A; Package limited, TA=25°C
Continuous drain current118 A; Silicon limited, TC=25°C
Continuous drain current84 A; Silicon limited, TC=100°C
Pulsed drain current294 A; Max RθJC=0.8°C/W, pulse duration ≤100 µs, duty cycle ≤1%
Power dissipation192 W; TA=25°C
Operating junction temperature-55 to 175 °C; Absolute maximum ratings
Storage temperature-55 to 175 °C; Absolute maximum ratings
Avalanche energy single pulse135 mJ; ID=52 A, L=0.1 mH, RG=25 Ω
Drain-to-source breakdown voltageMin 60 V; VGS=0 V, ID=250 µA, TA=25°C
Drain-to-source leakage currentMax 1 µA; VGS=0 V, VDS=48 V, TA=25°C
Gate-to-source leakage currentMax 100 nA; VDS=0 V, VGS=20 V, TA=25°C
Gate-to-source threshold voltageMin 1.5 V, Typ 1.9 V, Max 2.3 V; VDS=VGS, ID=250 µA, TA=25°C
Drain-to-source on-resistanceTyp 6.9 mΩ, Max 9.0 mΩ; VGS=4.5 V, ID=75 A, TA=25°C
Drain-to-source on-resistanceTyp 5.0 mΩ, Max 6.3 mΩ; VGS=10 V, ID=75 A, TA=25°C
TransconductanceTyp 150 S; VDS=30 V, ID=75 A, TA=25°C
Input capacitanceTyp 2420 pF, Max 3025 pF; VGS=0 V, VDS=30 V, f=1 MHz, TA=25°C
Output capacitanceTyp 300 pF, Max 375 pF; VGS=0 V, VDS=30 V, f=1 MHz, TA=25°C
Reverse transfer capacitanceTyp 7 pF, Max 9.1 pF; VGS=0 V, VDS=30 V, f=1 MHz, TA=25°C
Series gate resistanceTyp 1.4 Ω, Max 2.8 Ω; TA=25°C
Gate charge totalTyp 14 nC, Max 17 nC; VGS=4.5 V, VDS=30 V, ID=75 A, TA=25°C
Gate charge totalTyp 28 nC, Max 34 nC; VGS=10 V, VDS=30 V, ID=75 A, TA=25°C
Gate charge gate-to-drainTyp 3.9 nC; VDS=30 V, ID=75 A, TA=25°C
Gate charge gate-to-sourceTyp 9.4 nC; VDS=30 V, ID=75 A, TA=25°C
Gate charge at threshold voltageTyp 4.6 nC; VDS=30 V, ID=75 A, TA=25°C
Output chargeTyp 31 nC; VDS=30 V, VGS=0 V, TA=25°C
Turn-on delay timeTyp 5.7 ns; VDS=30 V, VGS=10 V, IDS=75 A, RG=0 Ω, TA=25°C
Rise timeTyp 4.8 ns; VDS=30 V, VGS=10 V, IDS=75 A, RG=0 Ω, TA=25°C
Turn-off delay timeTyp 13 ns; VDS=30 V, VGS=10 V, IDS=75 A, RG=0 Ω, TA=25°C
Fall timeTyp 3.2 ns; VDS=30 V, VGS=10 V, IDS=75 A, RG=0 Ω, TA=25°C
Diode forward voltageTyp 0.8 V, Max 1 V; ISD=75 A, VGS=0 V, TA=25°C
Reverse recovery chargeTyp 97 nC; VDS=30 V, IF=75 A, di/dt=300 A/µs, TA=25°C
Reverse recovery timeTyp 49 ns; VDS=30 V, IF=75 A, di/dt=300 A/µs, TA=25°C
Junction-to-case thermal resistanceMax 0.8 °C/W; TA=25°C unless otherwise stated
Junction-to-ambient thermal resistanceMax 62 °C/W; TA=25°C unless otherwise stated
Orderable package quantity50; CSD18533KCS, tube media
Package carrierTube; CSD18533KCS ordering information
Operating temperature range-55 to 175 °C; Package option addendum for CSD18533KCS and CSD18533KCS.B
Part markingCSD18533KCS; Package option addendum
Datasheet Statusrequest_only

Product Overview

CSD18533KCS is a Texas Instruments N-channel power MOSFET listed in the Power_Management category. It uses a TO-220 plastic package, KCS, with 3 pins, and is supplied in tube media with an orderable package quantity of 50. The package option addendum lists the part marking as CSD18533KCS and the operating temperature range as -55 to 175°C.

Electrical limits include 60 V drain-to-source voltage, ±20 V gate-to-source absolute maximum voltage, and -55 to 175°C operating junction and storage temperature ranges. Continuous drain current ratings are 100 A package-limited at TA=25°C, 118 A silicon-limited at TC=25°C, and 84 A silicon-limited at TC=100°C. Pulsed drain current is specified as 294 A for pulse duration ≤100 µs and duty cycle ≤1%.

For conduction and switching analysis, the datasheet specifies 5.0 mΩ typical and 6.3 mΩ maximum on-resistance at VGS=10 V, ID=75 A, TA=25°C, and 6.9 mΩ typical and 9.0 mΩ maximum at VGS=4.5 V. Gate charge is 28 nC typical at VGS=10 V and 14 nC typical at VGS=4.5 V, with switching times specified under VDS=30 V, VGS=10 V, IDS=75 A, and RG=0 Ω.

Key Features

  • 60 V drain-to-source voltage rating
  • 5.0 mΩ typical RDS(on) at VGS=10 V
  • 6.9 mΩ typical RDS(on) at VGS=4.5 V
  • 100 A package-limited continuous drain current at TA=25°C
  • 294 A pulsed drain current under specified pulse conditions
  • 28 nC typical total gate charge at VGS=10 V
  • 1.9 V typical gate-to-source threshold voltage
  • TO-220 plastic KCS package with 3 pins
  • -55 to 175°C operating temperature range
  • Max 0.8°C/W junction-to-case thermal resistance

Typical Applications

  • Power management switching stages
  • Low-voltage DC power paths
  • High-current MOSFET switching
  • TO-220 through-hole power assemblies
  • Gate-drive evaluated power circuits
  • Body-diode conduction applications

Procurement Notes

When requesting a quote for CSD18533KCS, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of component is CSD18533KCS?

CSD18533KCS is an N-channel power MOSFET from Texas Instruments in the Power_Management category. The extracted package data identifies it as a 3-pin TO-220 plastic KCS package.

What voltage and current ratings are specified?

The device has a 60 V drain-to-source rating and a ±20 V gate-to-source absolute maximum rating. Continuous drain current is listed as 100 A package-limited at TA=25°C and 118 A silicon-limited at TC=25°C.

What on-resistance values are listed for this MOSFET?

At VGS=10 V and ID=75 A, drain-to-source on-resistance is 5.0 mΩ typical and 6.3 mΩ maximum. At VGS=4.5 V and ID=75 A, it is 6.9 mΩ typical and 9.0 mΩ maximum.

What package and ordering information is provided?

CSD18533KCS is supplied in a TO-220 plastic KCS package with 3 pins. The ordering facts list tube media, an orderable package quantity of 50, and part marking CSD18533KCS.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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