Specifications
| Type | Description |
|---|---|
| Part Number | CSD18563Q5A |
| Manufacturer | Texas Instruments |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | SON 5 mm x 6 mm plastic package; Q5A package, nominal dimensions 4.90 mm x 6.00 mm x 1.00 mm |
| Drain-to-Source Voltage | 60 V; absolute maximum rating, TA=25°C |
| Gate-to-Source Voltage | ±20 V; absolute maximum rating, TA=25°C |
| Continuous Drain Current | 100 A; package limited |
| Continuous Drain Current | 93 A; silicon limited, TC=25°C |
| Continuous Drain Current | 15 A; TA=25°C, typical RθJA=40°C/W on 1 in² 2 oz Cu FR4 PCB |
| Pulsed Drain Current | 251 A; max RθJC=1.3°C/W, pulse duration ≤100 µs, duty cycle ≤1% |
| Power Dissipation | 3.2 W; TA=25°C, typical RθJA=40°C/W on 1 in² 2 oz Cu FR4 PCB |
| Power Dissipation | 116 W; TC=25°C |
| Operating Junction Temperature | -55 to 150 °C; absolute maximum rating |
| Storage Temperature | -55 to 150 °C; absolute maximum rating |
| Single-Pulse Avalanche Energy | 146 mJ; ID=54 A, L=0.1 mH, RG=25 Ω |
| Drain-to-Source Breakdown Voltage | Min 60 V; VGS=0 V, ID=250 µA, TA=25°C |
| Drain-to-Source Leakage Current | Max 1 µA; VGS=0 V, VDS=48 V, TA=25°C |
| Gate-to-Source Leakage Current | Max 100 nA; VDS=0 V, VGS=20 V, TA=25°C |
| Gate-to-Source Threshold Voltage | Min 1.7 V, Typ 2.0 V, Max 2.4 V; VDS=VGS, ID=250 µA, TA=25°C |
| Drain-to-Source On-Resistance | Typ 8.6 mΩ, Max 10.8 mΩ; VGS=4.5 V, ID=18 A, TA=25°C |
| Drain-to-Source On-Resistance | Typ 5.7 mΩ, Max 6.8 mΩ; VGS=10 V, ID=18 A, TA=25°C |
| Transconductance | Typ 60 S; VDS=30 V, ID=18 A, TA=25°C |
| Input Capacitance | Typ 1150 pF, Max 1500 pF; VGS=0 V, VDS=30 V, f=1 MHz, TA=25°C |
| Output Capacitance | Typ 280 pF, Max 364 pF; VGS=0 V, VDS=30 V, f=1 MHz, TA=25°C |
| Reverse Transfer Capacitance | Typ 3.9 pF, Max 5.1 pF; VGS=0 V, VDS=30 V, f=1 MHz, TA=25°C |
| Series Gate Resistance | Typ 1.5 Ω, Max 3.0 Ω; TA=25°C |
| Total Gate Charge | Typ 7.3 nC, Max 9.5 nC; VGS=4.5 V, VDS=30 V, ID=18 A, TA=25°C |
| Total Gate Charge | Typ 15 nC, Max 20 nC; VGS=10 V, VDS=30 V, ID=18 A, TA=25°C |
| Gate-to-Drain Charge | Typ 2.9 nC; VDS=30 V, ID=18 A, TA=25°C |
| Gate-to-Source Charge | Typ 3.3 nC; VDS=30 V, ID=18 A, TA=25°C |
| Gate Charge at Threshold | Typ 2.3 nC; TA=25°C |
| Output Charge | Typ 36 nC; VDS=30 V, VGS=0 V, TA=25°C |
| Turn-On Delay Time | Typ 3.2 ns; VDS=30 V, VGS=10 V, IDS=18 A, RG=0 Ω, TA=25°C |
| Rise Time | Typ 6.3 ns; VDS=30 V, VGS=10 V, IDS=18 A, RG=0 Ω, TA=25°C |
| Turn-Off Delay Time | Typ 11.4 ns; VDS=30 V, VGS=10 V, IDS=18 A, RG=0 Ω, TA=25°C |
| Fall Time | Typ 1.7 ns; VDS=30 V, VGS=10 V, IDS=18 A, RG=0 Ω, TA=25°C |
| Diode Forward Voltage | Typ 0.8 V, Max 1 V; ISD=18 A, VGS=0 V, TA=25°C |
| Reverse Recovery Charge | Typ 63 nC; VDS=30 V, IF=18 A, di/dt=300 A/µs, TA=25°C |
| Reverse Recovery Time | Typ 49 ns; VDS=30 V, IF=18 A, di/dt=300 A/µs, TA=25°C |
| Junction-to-Case Thermal Resistance | Typ 1.3 °C/W; mounted on 1 in², 2 oz Cu pad on 1.5 in x 1.5 in, 0.06 in thick FR4 PCB |
| Junction-to-Ambient Thermal Resistance | Typ 50 °C/W; mounted on FR4 with 1 in², 2 oz Cu |
| Package Height | Min 0.90 mm, Nom 1.00 mm, Max 1.10 mm; Q5A package dimension A |
| Package Body Length | Min 4.80 mm, Nom 4.90 mm, Max 5.00 mm; Q5A package dimension D1 |
| Package Body Width | Min 5.90 mm, Nom 6.00 mm, Max 6.10 mm; Q5A package dimension E |
| Package Pin Pitch | Min 1.17 mm, Nom 1.27 mm, Max 1.37 mm; Q5A package dimension e |
| Ordering Option | CSD18563Q5A, 13-inch reel, 2500 quantity, tape and reel; SON 5 mm x 6 mm plastic package |
| Ordering Option | CSD18563Q5AT, 7-inch reel, 250 quantity, tape and reel; SON 5 mm x 6 mm plastic package |
| Datasheet Status | request_only |
Product Overview
The CSD18563Q5A is a Texas Instruments N-channel power MOSFET for Power_Management designs requiring a 60 V drain-to-source voltage rating. Absolute maximum ratings include ±20 V gate-to-source voltage, 100 A package-limited continuous drain current, 93 A silicon-limited continuous drain current at TC=25°C, and 251 A pulsed drain current under the specified short-pulse condition.
Its conduction and drive parameters include 5.7 mΩ typical and 6.8 mΩ maximum drain-to-source on-resistance at VGS=10 V and ID=18 A, plus 8.6 mΩ typical and 10.8 mΩ maximum at VGS=4.5 V. Gate charge is specified as 15 nC typical and 20 nC maximum at VGS=10 V, and 7.3 nC typical and 9.5 nC maximum at VGS=4.5 V.
The device uses a SON 5 mm x 6 mm plastic Q5A package with nominal 4.90 mm body length, 6.00 mm body width, and 1.00 mm height. Thermal data includes 1.3 °C/W typical junction-to-case resistance and 50 °C/W typical junction-to-ambient resistance on the specified FR4 copper board.
Key Features
- 60 V drain-to-source absolute maximum rating
- ±20 V gate-to-source absolute maximum rating
- 100 A package-limited continuous drain current
- 251 A pulsed drain current under specified pulse conditions
- 6.8 mΩ maximum RDS(on) at 10 V gate drive
- 20 nC maximum total gate charge at 10 V gate drive
- 3.2 ns typical turn-on delay at 18 A
- 49 ns typical reverse recovery time at 18 A
- 1.3 °C/W typical junction-to-case thermal resistance
- SON 5 mm x 6 mm Q5A plastic package
Typical Applications
- 60 V MOSFET power stages
- Board-level power management switching
- Low-resistance power path switching
- Gate-driven 18 A switching circuits
- FR4-mounted power assemblies
- Designs requiring SON 5 mm x 6 mm packaging
Procurement Notes
When requesting a quote for CSD18563Q5A, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the CSD18563Q5A?
CSD18563Q5A is an N-channel power MOSFET from Texas Instruments in the Power_Management category. It is supplied in a SON 5 mm x 6 mm plastic Q5A package with nominal 4.90 mm x 6.00 mm x 1.00 mm dimensions.
What voltage ratings are specified for CSD18563Q5A?
The drain-to-source voltage absolute maximum rating is 60 V at TA=25°C. The drain-to-source breakdown voltage is specified as minimum 60 V with VGS=0 V, ID=250 µA, and TA=25°C. Gate-to-source voltage is rated at ±20 V.
What on-resistance does CSD18563Q5A provide?
At VGS=10 V and ID=18 A, the drain-to-source on-resistance is 5.7 mΩ typical and 6.8 mΩ maximum. At VGS=4.5 V and ID=18 A, it is 8.6 mΩ typical and 10.8 mΩ maximum.
What package dimensions are listed for the Q5A package?
The Q5A package has a height of 0.90 mm minimum, 1.00 mm nominal, and 1.10 mm maximum. Body length is 4.80 mm to 5.00 mm with 4.90 mm nominal, and body width is 5.90 mm to 6.10 mm with 6.00 mm nominal.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.