CSD19531KCS N-channel Power MOSFET

Texas Instruments Power_Management — specifications, applications, sourcing support and RFQ.

CSD19531KCS N-channel Power MOSFET

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Part Number
CSD19531KCS
Manufacturer
Texas Instruments
Package
TO-220 Plastic Package (KCS), 3 pins
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

CSD19531KCS from Texas Instruments is an N-channel power MOSFET in the Power_Management category. It is supplied in a TO-220 Plastic Package (KCS) with 3 pins and tube packaging of 50 units. Key ratings include 100 V drain-to-source voltage, ±20 V gate-to-source voltage, 100 A package-limited continuous drain current at TA=25°C, and 110 A silicon-limited continuous drain current at TC=25°C. Electrical parameters include 6.4 mΩ typical on resistance at VGS=10 V and 60 A, 38 nC typical total gate charge, and -55 to 175°C junction and storage temperature range.

Specifications

TypeDescription
Part NumberCSD19531KCS
ManufacturerTexas Instruments
Product TypeLDO Regulator
CategoryPower Management
Package / CaseTO-220 Plastic Package (KCS), 3 pins
Drain-to-Source Voltage100 V; absolute maximum rating, TA=25°C
Gate-to-Source Voltage±20 V; absolute maximum rating, TA=25°C
Continuous Drain Current100 A; package limited, TA=25°C
Continuous Drain Current110 A; silicon limited, TC=25°C
Continuous Drain Current78 A; silicon limited, TC=100°C
Pulsed Drain Current285 A; pulse duration ≤100 µs, duty cycle ≤1%, max RθJC=0.7°C/W
Power Dissipation214 W; TA=25°C
Operating Junction and Storage Temperature-55 to 175 °C; TJ, Tstg
Single Pulse Avalanche Energy180 mJ; ID=60 A, L=0.1 mH, RG=25 Ω
Drain-to-Source Breakdown Voltagemin 100 V; VGS=0 V, ID=250 µA, TA=25°C
Drain-to-Source Leakage Currentmax 1 µA; VGS=0 V, VDS=80 V, TA=25°C
Gate-to-Source Leakage Currentmax 100 nA; VDS=0 V, VGS=20 V, TA=25°C
Gate-to-Source Threshold Voltagemin 2.2 V, typ 2.7 V, max 3.3 V; VDS=VGS, ID=250 µA, TA=25°C
Drain-to-Source On Resistancetyp 7.3 mΩ, max 8.8 mΩ; VGS=6 V, ID=60 A, TA=25°C
Drain-to-Source On Resistancetyp 6.4 mΩ, max 7.7 mΩ; VGS=10 V, ID=60 A, TA=25°C
Transconductancetyp 137 S; VDS=10 V, ID=60 A, TA=25°C
Input Capacitancetyp 2980 pF, max 3870 pF; VGS=0 V, VDS=50 V, f=1 MHz, TA=25°C
Output Capacitancetyp 560 pF, max 728 pF; VGS=0 V, VDS=50 V, f=1 MHz, TA=25°C
Reverse Transfer Capacitancetyp 13 pF, max 17 pF; VGS=0 V, VDS=50 V, f=1 MHz, TA=25°C
Series Gate Resistancetyp 1.3 Ω, max 2.6 Ω; TA=25°C
Total Gate Chargetyp 38 nC, max 49 nC; VDS=50 V, ID=60 A, VGS=10 V, TA=25°C
Gate-to-Drain Chargetyp 7.5 nC; VDS=50 V, ID=60 A, TA=25°C
Gate-to-Source Chargetyp 11.9 nC; VDS=50 V, ID=60 A, TA=25°C
Gate Charge at Thresholdtyp 7.3 nC; VDS=50 V, ID=60 A, TA=25°C
Output Chargetyp 98 nC; VDS=50 V, VGS=0 V, TA=25°C
Turn-On Delay Timetyp 8.4 ns; VDS=50 V, VGS=10 V, IDS=60 A, RG=0 Ω, TA=25°C
Rise Timetyp 7.2 ns; VDS=50 V, VGS=10 V, IDS=60 A, RG=0 Ω, TA=25°C
Turn-Off Delay Timetyp 16 ns; VDS=50 V, VGS=10 V, IDS=60 A, RG=0 Ω, TA=25°C
Fall Timetyp 4.1 ns; VDS=50 V, VGS=10 V, IDS=60 A, RG=0 Ω, TA=25°C
Diode Forward Voltagetyp 0.9 V, max 1 V; ISD=60 A, VGS=0 V, TA=25°C
Reverse Recovery Chargetyp 270 nC; VDS=50 V, IF=60 A, di/dt=300 A/µs, TA=25°C
Reverse Recovery Timetyp 83 ns; VDS=50 V, IF=60 A, di/dt=300 A/µs, TA=25°C
Junction-to-Case Thermal Resistancemax 0.7 °C/W; TA=25°C
Junction-to-Ambient Thermal Resistancemax 62 °C/W; TA=25°C
Package Quantity50 units per tube; CSD19531KCS TO-220 Plastic Package
Orderable Part NumberCSD19531KCS; TO-220 (KCS), 3 pins, 50 | TUBE
Orderable Part NumberCSD19531KCS.B; TO-220 (KCS), 3 pins, 50 | TUBE
Part MarkingCSD19531KCS; package option addendum
Datasheet Statusrequest_only

Product Overview

CSD19531KCS is a Texas Instruments N-channel power MOSFET for Power_Management designs that require a 100 V drain-to-source rating and high drain-current capability. The device is specified in a TO-220 Plastic Package (KCS) with 3 pins, and the package option addendum lists CSD19531KCS as the part marking.

The device has ±20 V gate-to-source absolute maximum rating and continuous drain-current ratings of 100 A package limited at TA=25°C, 110 A silicon limited at TC=25°C, and 78 A silicon limited at TC=100°C. Pulsed drain current is specified at 285 A for pulse duration ≤100 µs and duty cycle ≤1% with max RθJC=0.7°C/W.

Switching and drive-related data include 6.4 mΩ typical drain-to-source on resistance at VGS=10 V, 38 nC typical total gate charge, 8.4 ns typical turn-on delay, and 16 ns typical turn-off delay. Thermal limits include max 0.7°C/W junction-to-case and max 62°C/W junction-to-ambient thermal resistance.

Key Features

  • 100 V drain-to-source absolute maximum rating
  • ±20 V gate-to-source absolute maximum rating
  • 100 A package-limited continuous drain current
  • 110 A silicon-limited current at TC=25°C
  • 285 A pulsed drain current rating
  • 6.4 mΩ typical on resistance at VGS=10 V
  • 38 nC typical total gate charge
  • 8.4 ns typical turn-on delay time
  • -55 to 175°C junction and storage range
  • TO-220 KCS 3-pin plastic package

Typical Applications

  • Power switching stages
  • High-current MOSFET designs
  • 100 V power rails
  • TO-220 through-hole assemblies
  • Fast-switching power circuits
  • Body-diode conduction paths
  • Avalanche-rated switching circuits

Procurement Notes

When requesting a quote for CSD19531KCS, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of device is CSD19531KCS?

CSD19531KCS is an N-channel power MOSFET from Texas Instruments in the Power_Management category. It is supplied in a TO-220 Plastic Package (KCS) with 3 pins.

What voltage and current ratings are specified?

The device has a 100 V drain-to-source absolute maximum rating and ±20 V gate-to-source rating. Continuous drain current is 100 A package limited at TA=25°C and 110 A silicon limited at TC=25°C.

What on resistance is listed for this MOSFET?

Drain-to-source on resistance is specified as typ 7.3 mΩ and max 8.8 mΩ at VGS=6 V, ID=60 A. At VGS=10 V and ID=60 A, it is typ 6.4 mΩ and max 7.7 mΩ.

What package and orderable options are listed?

The package is TO-220 Plastic Package (KCS), 3 pins. Orderable part numbers listed are CSD19531KCS and CSD19531KCS.B, each noted with TO-220 (KCS), 3 pins, 50 | TUBE.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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