CSD87351Q5D Synchronous Buck Power Block

Texas Instruments Power_Management — specifications, applications, sourcing support and RFQ.

CSD87351Q5D Synchronous Buck Power Block

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
CSD87351Q5D
Manufacturer
Texas Instruments
Package
SON 5.00 mm x 6.00 mm plastic package
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

CSD87351Q5D from Texas Instruments is a Power_Management synchronous buck power block in a SON 5.00 mm x 6.00 mm plastic package. It uses a half-bridge power block topology for synchronous buck applications and supports recommended operating current up to 32 A. The device is specified for high-frequency operation up to 1.5 MHz, with recommended switching frequency from 200 to 1500 kHz when CBST is at least 0.1 uF. Key parameters include 90% system efficiency at 20 A, optimized 5 V gate drive, recommended input supply voltage up to 27 V, and recommended operating junction temperature up to 125 °C.

Specifications

TypeDescription
Part NumberCSD87351Q5D
ManufacturerTexas Instruments
Product TypeLDO Regulator
CategoryPower Management
Package / CaseSON 5.00 mm x 6.00 mm plastic package
TopologyHalf-bridge power block; synchronous buck applications
System Efficiency90%; at 20 A
Operating CurrentUp to 32 A; recommended operation
Switching Frequency CapabilityUp to 1.5 MHz; high-frequency operation
Optimized Gate Drive5 V; external controller/driver gate drive
Absolute Maximum VIN to PGND Voltage-0.8 to 30 V; TA=25°C unless otherwise noted
Absolute Maximum TG to TGR Voltage-8 to 10 V; TA=25°C unless otherwise noted
Absolute Maximum BG to PGND Voltage-8 to 10 V; TA=25°C unless otherwise noted
Pulsed Current Rating96 A; pulse duration <=50 us, duty cycle <=0.01%
Power Dissipation12 W; absolute maximum, TA=25°C unless otherwise noted
SyncFET Avalanche Energy378 mJ; ID=87 A, L=0.1 mH
ControlFET Avalanche Energy87 mJ; ID=44 A, L=0.1 mH
Operating Junction Temperature-55 to 150 °C; absolute maximum rating
Storage Temperature-55 to 150 °C; absolute maximum rating
Recommended Gate Drive Voltage4.5 to 8 V; TA=25°C unless otherwise noted
Recommended Input Supply VoltageMax 27 V; TA=25°C unless otherwise noted
Recommended Switching Frequency200 to 1500 kHz; CBST=0.1 uF minimum
Recommended Operating Current32 A; TA=25°C unless otherwise noted
Recommended Operating Junction TemperatureMax 125 °C; TA=25°C unless otherwise noted
Power LossTyp 2.5 W; VIN=12 V, VGS=5 V, VOUT=1.3 V, IOUT=20 A, fSW=500 kHz, LOUT=0.3 uH, TJ=25°C
VIN Quiescent CurrentTyp 10 uA; TG to TGR=0 V, BG to PGND=0 V
Junction-to-Ambient Thermal ResistanceTyp 119 °C/W; minimum copper, device mounted on FR4 with 1 in2 Cu
Junction-to-Ambient Thermal ResistanceTyp 62 °C/W; maximum copper, device mounted on FR4 with 1 in2 Cu
Junction-to-Case Thermal ResistanceTyp 25 °C/W; top of package
Junction-to-Case Thermal ResistanceTyp 2.3 °C/W; PGND pin
ControlFET Drain-to-Source VoltageMin 30 V; VGS=0 V, IDS=250 uA
SyncFET Drain-to-Source VoltageMin 30 V; VGS=0 V, IDS=250 uA
ControlFET Drain-to-Source Leakage CurrentMax 1 uA; VGS=0 V, VDS=24 V
SyncFET Drain-to-Source Leakage CurrentMax 1 uA; VGS=0 V, VDS=24 V
ControlFET Gate-to-Source Leakage CurrentMax 100 nA; VDS=0 V, VGS=+10/-8 V
SyncFET Gate-to-Source Leakage CurrentMax 100 nA; VDS=0 V, VGS=+10/-8 V
ControlFET Gate-to-Source Threshold VoltageMin 1.0 V, Max 2.1 V; VDS=VGS, IDS=250 uA
SyncFET Gate-to-Source Threshold VoltageMin 0.75 V, Max 1.15 V; VDS=VGS, IDS=250 uA
ControlFET Effective AC On-ImpedanceTyp 7.4 mOhm; VIN=12 V, VGS=5 V, VOUT=1.3 V, IOUT=20 A, fSW=500 kHz, LOUT=0.3 uH
SyncFET Effective AC On-ImpedanceTyp 1.6 mOhm; VIN=12 V, VGS=5 V, VOUT=1.3 V, IOUT=20 A, fSW=500 kHz, LOUT=0.3 uH
ControlFET TransconductanceTyp 75 S; VDS=15 V, IDS=20 A
SyncFET TransconductanceTyp 142 S; VDS=15 V, IDS=20 A
ControlFET Input CapacitanceTyp 966 pF, Max 1255 pF; VGS=0 V, VDS=15 V, f=1 MHz
SyncFET Input CapacitanceTyp 2410 pF, Max 3133 pF; VGS=0 V, VDS=15 V, f=1 MHz
ControlFET Output CapacitanceTyp 382 pF, Max 497 pF; VGS=0 V, VDS=15 V, f=1 MHz
SyncFET Output CapacitanceTyp 1130 pF, Max 1469 pF; VGS=0 V, VDS=15 V, f=1 MHz
ControlFET Reverse Transfer CapacitanceTyp 19 pF, Max 25 pF; VGS=0 V, VDS=15 V, f=1 MHz
SyncFET Reverse Transfer CapacitanceTyp 45 pF, Max 59 pF; VGS=0 V, VDS=15 V, f=1 MHz
ControlFET Series Gate ResistanceTyp 0.9 Ohm, Max 1.8 Ohm; TA=25°C unless otherwise stated
SyncFET Series Gate ResistanceTyp 1 Ohm, Max 2 Ohm; TA=25°C unless otherwise stated
ControlFET Total Gate ChargeTyp 5.9 nC, Max 7.7 nC; VGS=4.5 V, VDS=15 V, IDS=20 A
SyncFET Total Gate ChargeTyp 17 nC, Max 22 nC; VGS=4.5 V, VDS=15 V, IDS=20 A
ControlFET Gate-to-Drain ChargeTyp 1.1 nC; VDS=15 V, IDS=20 A
SyncFET Gate-to-Drain ChargeTyp 3.1 nC; VDS=15 V, IDS=20 A
ControlFET Gate-to-Source ChargeTyp 2.1 nC; VDS=15 V, IDS=20 A
SyncFET Gate-to-Source ChargeTyp 3.7 nC; VDS=15 V, IDS=20 A
ControlFET Gate Charge at ThresholdTyp 1.1 nC; VDS=15 V, IDS=20 A
SyncFET Gate Charge at ThresholdTyp 2 nC; VDS=15 V, IDS=20 A
ControlFET Output ChargeTyp 6.5 nC; VDS=9.8 V, VGS=0 V
SyncFET Output ChargeTyp 23 nC; VDS=9.8 V, VGS=0 V
ControlFET Turn-On Delay TimeTyp 6.1 ns; VDS=15 V, VGS=4.5 V, IDS=20 A, RG=2 Ohm
SyncFET Turn-On Delay TimeTyp 7.7 ns; VDS=15 V, VGS=4.5 V, IDS=20 A, RG=2 Ohm
ControlFET Rise TimeTyp 16 ns; VDS=15 V, VGS=4.5 V, IDS=20 A, RG=2 Ohm
SyncFET Rise TimeTyp 10 ns; VDS=15 V, VGS=4.5 V, IDS=20 A, RG=2 Ohm
ControlFET Turn-Off Delay TimeTyp 10 ns; VDS=15 V, VGS=4.5 V, IDS=20 A, RG=2 Ohm
SyncFET Turn-Off Delay TimeTyp 31 ns; VDS=15 V, VGS=4.5 V, IDS=20 A, RG=2 Ohm
ControlFET Fall TimeTyp 2.1 ns; VDS=15 V, VGS=4.5 V, IDS=20 A, RG=2 Ohm
SyncFET Fall TimeTyp 4.2 ns; VDS=15 V, VGS=4.5 V, IDS=20 A, RG=2 Ohm
ControlFET Diode Forward VoltageTyp 0.86 V, Max 1 V; IDS=20 A, VGS=0 V
SyncFET Diode Forward VoltageTyp 0.78 V, Max 1 V; IDS=20 A, VGS=0 V
ControlFET Reverse Recovery ChargeTyp 8.6 nC; Vdd=9.8 V, IF=20 A, di/dt=300 A/us
SyncFET Reverse Recovery ChargeTyp 23 nC; Vdd=9.8 V, IF=20 A, di/dt=300 A/us
ControlFET Reverse Recovery TimeTyp 16 ns; Vdd=9.8 V, IF=20 A, di/dt=300 A/us
SyncFET Reverse Recovery TimeTyp 24 ns; Vdd=9.8 V, IF=20 A, di/dt=300 A/us
Datasheet Statusrequest_only

Product Overview

Texas Instruments CSD87351Q5D is a synchronous buck power block categorized under Power_Management. Its topology is a half-bridge power block for synchronous buck applications, integrating ControlFET and SyncFET behavior characterized across gate charge, capacitance, leakage, switching timing, diode, and reverse-recovery parameters.

The device is supplied in a SON 5.00 mm x 6.00 mm plastic package. Recommended operation includes up to 32 A operating current, input supply voltage up to 27 V, and a gate drive voltage range of 4.5 to 8 V. It is optimized for a 5 V external controller or driver gate drive and supports switching from 200 to 1500 kHz with CBST of 0.1 uF minimum.

Performance data includes 90% system efficiency at 20 A and typical 2.5 W power loss under VIN=12 V, VGS=5 V, VOUT=1.3 V, IOUT=20 A, fSW=500 kHz, LOUT=0.3 uH, and TJ=25°C. Thermal data includes junction-to-ambient and junction-to-case resistance values for copper and package reference conditions.

Key Features

  • Half-bridge power block for synchronous buck applications
  • 90% system efficiency specified at 20 A
  • Recommended operating current specified at 32 A
  • Supports switching frequency capability up to 1.5 MHz
  • Optimized for 5 V external gate drive
  • Recommended gate drive voltage range is 4.5 to 8 V
  • Recommended input supply voltage is up to 27 V
  • Typical power loss is 2.5 W at stated conditions
  • ControlFET effective AC on-impedance is typ 7.4 mOhm
  • SyncFET effective AC on-impedance is typ 1.6 mOhm

Typical Applications

  • Synchronous buck applications
  • Half-bridge power stages
  • High-current buck conversion
  • 12 V input buck rails
  • 1.3 V output buck rails
  • High-frequency DC-DC conversion
  • External controller gate-drive designs

Procurement Notes

When requesting a quote for CSD87351Q5D, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of power device is CSD87351Q5D?

CSD87351Q5D is a Texas Instruments synchronous buck power block for Power_Management applications. The extracted topology is a half-bridge power block intended for synchronous buck applications.

What package is specified for CSD87351Q5D?

The package case is specified as a SON 5.00 mm x 6.00 mm plastic package. Thermal data includes junction-to-case values referenced to the top of package and PGND pin.

What are the recommended operating limits for this part?

Recommended operating data includes up to 32 A operating current, input supply voltage up to 27 V, gate drive voltage from 4.5 to 8 V, switching frequency from 200 to 1500 kHz, and junction temperature up to 125 °C.

What efficiency and power loss data are provided?

The extracted facts specify 90% system efficiency at 20 A. Typical power loss is 2.5 W under VIN=12 V, VGS=5 V, VOUT=1.3 V, IOUT=20 A, fSW=500 kHz, LOUT=0.3 uH, and TJ=25°C.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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