FDB3632_F085 N-Channel PowerTrench MOSFET

LG Power_Management — specifications, applications, sourcing support and RFQ.

FDB3632_F085 N-Channel PowerTrench MOSFET

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
FDB3632_F085
Manufacturer
LG
Package
TO-263AB
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

FDB3632_F085 from LG is a Power_Management N-Channel PowerTrench MOSFET in a TO-263AB package. Key datasheet parameters include a 100 V drain-to-source maximum rating, ±20 V gate-to-source rating, 80 A continuous drain current at TC<111°C with VGS=10V, and 310 W power dissipation at TC=25°C. Electrical characteristics include 0.009 Ω maximum RDS(on) at ID=80A and VGS=10V, 84 nC typical total gate charge at 10 V, and AEC Q101 qualification. Use cases center on 100 V, high-current power switching designs, automotive-qualified MOSFET stages, and TO-263AB surface-mount power assemblies.

Specifications

TypeDescription
Part NumberFDB3632_F085
ManufacturerLG
Product TypeLDO Regulator
CategoryPower Management
Package / CaseTO-263AB
Drain to Source Voltage100 V; maximum rating, TC=25°C
Gate to Source Voltage±20 V; maximum rating, TC=25°C
Continuous Drain Current80 A; TC<111°C, VGS=10V
Continuous Drain Current12 A; Tamb=25°C, VGS=10V, RθJA=43°C/W
Pulsed Drain CurrentFigure 4; maximum rating, TC=25°C
Single Pulse Avalanche Energy338 mJ; starting TJ=25°C, L=0.12mH, IAS=75A
Power Dissipation310 W; maximum rating, TC=25°C
Power Dissipation Derating2.07 W/°C; derate above 25°C
Operating and Storage Temperature-55 to +175 °C; TJ, TSTG
Thermal Resistance Junction to Case0.48 °C/W; TO-220, TO-263, TO-262
Thermal Resistance Junction to Ambient62 °C/W; TO-220, TO-262, pulse width=100s
Thermal Resistance Junction to Ambient43 °C/W; TO-263, 1in² copper pad area
Drain to Source Breakdown VoltageMin 100 V; ID=250µA, VGS=0V
Zero Gate Voltage Drain CurrentMax 1 µA; VDS=80V, VGS=0V
Zero Gate Voltage Drain CurrentMax 250 µA; VDS=80V, VGS=0V, TC=150°C
Gate to Source Leakage CurrentMax ±100 nA; VGS=±20V
Gate to Source Threshold VoltageMin 2 V, Max 4 V; VGS=VDS, ID=250µA
Drain to Source On ResistanceTyp 0.0075 Ω, Max 0.009 Ω; ID=80A, VGS=10V
Drain to Source On ResistanceTyp 0.018 Ω, Max 0.022 Ω; ID=80A, VGS=10V, TC=175°C
Input CapacitanceTyp 6000 pF; VDS=25V, VGS=0V, f=1MHz
Output CapacitanceTyp 820 pF; VDS=25V, VGS=0V, f=1MHz
Reverse Transfer CapacitanceTyp 200 pF; VDS=25V, VGS=0V, f=1MHz
Total Gate Charge at 10VTyp 84 nC, Max 110 nC; VGS=0V to 10V, VDD=50V, ID=80A, Ig=1.0mA
Threshold Gate ChargeTyp 11 nC, Max 14 nC; VGS=0V to 2V, VDD=50V, ID=80A, Ig=1.0mA
Gate to Source Gate ChargeTyp 30 nC; VDD=50V, ID=80A, Ig=1.0mA
Gate Charge Threshold to PlateauTyp 20 nC; VDD=50V, ID=80A, Ig=1.0mA
Gate to Drain Miller ChargeTyp 20 nC; VDD=50V, ID=80A, Ig=1.0mA
Turn-On TimeMax 102 ns; VGS=10V, VDD=50V, ID=80A, RGS=3.6Ω
Turn-On Delay TimeTyp 30 ns; VGS=10V, VDD=50V, ID=80A, RGS=3.6Ω
Rise TimeTyp 39 ns; VGS=10V, VDD=50V, ID=80A, RGS=3.6Ω
Turn-Off Delay TimeTyp 96 ns; VGS=10V, VDD=50V, ID=80A, RGS=3.6Ω
Fall TimeTyp 46 ns; VGS=10V, VDD=50V, ID=80A, RGS=3.6Ω
Turn-Off TimeMax 213 ns; VGS=10V, VDD=50V, ID=80A, RGS=3.6Ω
Source to Drain Diode VoltageMax 1.25 V; ISD=80A
Source to Drain Diode VoltageMax 1.0 V; ISD=40A
Reverse Recovery TimeMax 64 ns; ISD=75A, dISD/dt=100A/µs
Reverse Recovered ChargeMax 120 nC; ISD=75A, dISD/dt=100A/µs
Device MarkingFDB3632; ordering information
Ordering DeviceFDB3632-F085; package marking and ordering information
Reel Size330 mm; TO-263AB package
Tape Width24 mm; TO-263AB package
Quantity800 units; tape and reel ordering
AEC QualificationQualified to AEC Q101; feature list
RoHS ComplianceRoHS Compliant; feature list
Datasheet Statusrequest_only

Product Overview

FDB3632_F085 is listed as an LG N-Channel PowerTrench MOSFET for Power_Management use. The device is supplied in a TO-263AB package and carries a 100 V drain-to-source voltage rating with a ±20 V gate-to-source maximum rating. Its datasheet current ratings include 80 A continuous drain current at TC<111°C and VGS=10V, plus 12 A at Tamb=25°C with RθJA=43°C/W.

Conduction and switching parameters are specified for 80 A test conditions. Drain-to-source on resistance is 0.0075 Ω typical and 0.009 Ω maximum at ID=80A and VGS=10V, rising to 0.018 Ω typical and 0.022 Ω maximum at TC=175°C. Gate charge data includes 84 nC typical and 110 nC maximum total gate charge at 10 V.

Thermal data includes 0.48°C/W junction-to-case resistance and 43°C/W junction-to-ambient resistance for TO-263 with a 1in² copper pad area. Ordering information identifies FDB3632-F085, device marking FDB3632, 330 mm reel size, 24 mm tape width, and 800-unit tape-and-reel quantity.

Key Features

  • 100 V drain-to-source maximum rating at TC=25°C
  • ±20 V gate-to-source maximum rating at TC=25°C
  • 80 A continuous drain current with VGS=10V
  • 0.009 Ω maximum RDS(on) at ID=80A
  • 84 nC typical total gate charge at 10V
  • 310 W power dissipation at TC=25°C
  • 0.48°C/W junction-to-case thermal resistance
  • -55 to +175°C operating and storage range
  • Max 64 ns reverse recovery time
  • Qualified to AEC Q101
  • RoHS compliant device listing
  • TO-263AB tape-and-reel ordering support

Typical Applications

  • 100 V power switching stages
  • 80 A MOSFET drain-current designs
  • AEC-Q101 automotive power circuits
  • TO-263AB surface-mount power assemblies
  • Gate-driven 10 V switching circuits
  • High-current source-to-drain diode paths
  • Thermally managed copper-pad layouts

Procurement Notes

When requesting a quote for FDB3632_F085, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of device is FDB3632_F085?

FDB3632_F085 is identified as an LG N-Channel PowerTrench MOSFET in the Power_Management category. The extracted package information lists TO-263AB, and ordering data identifies the ordering device as FDB3632-F085 with device marking FDB3632.

What are the main voltage and current ratings?

The datasheet facts list a 100 V drain-to-source maximum rating at TC=25°C and a ±20 V gate-to-source maximum rating. Continuous drain current is 80 A at TC<111°C with VGS=10V, and 12 A at Tamb=25°C with RθJA=43°C/W.

What on-resistance is specified for this MOSFET?

Drain-to-source on resistance is specified as 0.0075 Ω typical and 0.009 Ω maximum at ID=80A and VGS=10V. At TC=175°C under the same ID and VGS conditions, it is 0.018 Ω typical and 0.022 Ω maximum.

What packaging and reel information is provided?

The extracted ordering facts list a TO-263AB package, 330 mm reel size, 24 mm tape width, and 800-unit tape-and-reel quantity. The ordering device is FDB3632-F085, and the device marking is FDB3632.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

Request Quote Request Datasheet