Specifications
| Type | Description |
|---|---|
| Part Number | FDB3632_F085 |
| Manufacturer | LG |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-263AB |
| Drain to Source Voltage | 100 V; maximum rating, TC=25°C |
| Gate to Source Voltage | ±20 V; maximum rating, TC=25°C |
| Continuous Drain Current | 80 A; TC<111°C, VGS=10V |
| Continuous Drain Current | 12 A; Tamb=25°C, VGS=10V, RθJA=43°C/W |
| Pulsed Drain Current | Figure 4; maximum rating, TC=25°C |
| Single Pulse Avalanche Energy | 338 mJ; starting TJ=25°C, L=0.12mH, IAS=75A |
| Power Dissipation | 310 W; maximum rating, TC=25°C |
| Power Dissipation Derating | 2.07 W/°C; derate above 25°C |
| Operating and Storage Temperature | -55 to +175 °C; TJ, TSTG |
| Thermal Resistance Junction to Case | 0.48 °C/W; TO-220, TO-263, TO-262 |
| Thermal Resistance Junction to Ambient | 62 °C/W; TO-220, TO-262, pulse width=100s |
| Thermal Resistance Junction to Ambient | 43 °C/W; TO-263, 1in² copper pad area |
| Drain to Source Breakdown Voltage | Min 100 V; ID=250µA, VGS=0V |
| Zero Gate Voltage Drain Current | Max 1 µA; VDS=80V, VGS=0V |
| Zero Gate Voltage Drain Current | Max 250 µA; VDS=80V, VGS=0V, TC=150°C |
| Gate to Source Leakage Current | Max ±100 nA; VGS=±20V |
| Gate to Source Threshold Voltage | Min 2 V, Max 4 V; VGS=VDS, ID=250µA |
| Drain to Source On Resistance | Typ 0.0075 Ω, Max 0.009 Ω; ID=80A, VGS=10V |
| Drain to Source On Resistance | Typ 0.018 Ω, Max 0.022 Ω; ID=80A, VGS=10V, TC=175°C |
| Input Capacitance | Typ 6000 pF; VDS=25V, VGS=0V, f=1MHz |
| Output Capacitance | Typ 820 pF; VDS=25V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Typ 200 pF; VDS=25V, VGS=0V, f=1MHz |
| Total Gate Charge at 10V | Typ 84 nC, Max 110 nC; VGS=0V to 10V, VDD=50V, ID=80A, Ig=1.0mA |
| Threshold Gate Charge | Typ 11 nC, Max 14 nC; VGS=0V to 2V, VDD=50V, ID=80A, Ig=1.0mA |
| Gate to Source Gate Charge | Typ 30 nC; VDD=50V, ID=80A, Ig=1.0mA |
| Gate Charge Threshold to Plateau | Typ 20 nC; VDD=50V, ID=80A, Ig=1.0mA |
| Gate to Drain Miller Charge | Typ 20 nC; VDD=50V, ID=80A, Ig=1.0mA |
| Turn-On Time | Max 102 ns; VGS=10V, VDD=50V, ID=80A, RGS=3.6Ω |
| Turn-On Delay Time | Typ 30 ns; VGS=10V, VDD=50V, ID=80A, RGS=3.6Ω |
| Rise Time | Typ 39 ns; VGS=10V, VDD=50V, ID=80A, RGS=3.6Ω |
| Turn-Off Delay Time | Typ 96 ns; VGS=10V, VDD=50V, ID=80A, RGS=3.6Ω |
| Fall Time | Typ 46 ns; VGS=10V, VDD=50V, ID=80A, RGS=3.6Ω |
| Turn-Off Time | Max 213 ns; VGS=10V, VDD=50V, ID=80A, RGS=3.6Ω |
| Source to Drain Diode Voltage | Max 1.25 V; ISD=80A |
| Source to Drain Diode Voltage | Max 1.0 V; ISD=40A |
| Reverse Recovery Time | Max 64 ns; ISD=75A, dISD/dt=100A/µs |
| Reverse Recovered Charge | Max 120 nC; ISD=75A, dISD/dt=100A/µs |
| Device Marking | FDB3632; ordering information |
| Ordering Device | FDB3632-F085; package marking and ordering information |
| Reel Size | 330 mm; TO-263AB package |
| Tape Width | 24 mm; TO-263AB package |
| Quantity | 800 units; tape and reel ordering |
| AEC Qualification | Qualified to AEC Q101; feature list |
| RoHS Compliance | RoHS Compliant; feature list |
| Datasheet Status | request_only |
Product Overview
FDB3632_F085 is listed as an LG N-Channel PowerTrench MOSFET for Power_Management use. The device is supplied in a TO-263AB package and carries a 100 V drain-to-source voltage rating with a ±20 V gate-to-source maximum rating. Its datasheet current ratings include 80 A continuous drain current at TC<111°C and VGS=10V, plus 12 A at Tamb=25°C with RθJA=43°C/W.
Conduction and switching parameters are specified for 80 A test conditions. Drain-to-source on resistance is 0.0075 Ω typical and 0.009 Ω maximum at ID=80A and VGS=10V, rising to 0.018 Ω typical and 0.022 Ω maximum at TC=175°C. Gate charge data includes 84 nC typical and 110 nC maximum total gate charge at 10 V.
Thermal data includes 0.48°C/W junction-to-case resistance and 43°C/W junction-to-ambient resistance for TO-263 with a 1in² copper pad area. Ordering information identifies FDB3632-F085, device marking FDB3632, 330 mm reel size, 24 mm tape width, and 800-unit tape-and-reel quantity.
Key Features
- 100 V drain-to-source maximum rating at TC=25°C
- ±20 V gate-to-source maximum rating at TC=25°C
- 80 A continuous drain current with VGS=10V
- 0.009 Ω maximum RDS(on) at ID=80A
- 84 nC typical total gate charge at 10V
- 310 W power dissipation at TC=25°C
- 0.48°C/W junction-to-case thermal resistance
- -55 to +175°C operating and storage range
- Max 64 ns reverse recovery time
- Qualified to AEC Q101
- RoHS compliant device listing
- TO-263AB tape-and-reel ordering support
Typical Applications
- 100 V power switching stages
- 80 A MOSFET drain-current designs
- AEC-Q101 automotive power circuits
- TO-263AB surface-mount power assemblies
- Gate-driven 10 V switching circuits
- High-current source-to-drain diode paths
- Thermally managed copper-pad layouts
Procurement Notes
When requesting a quote for FDB3632_F085, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is FDB3632_F085?
FDB3632_F085 is identified as an LG N-Channel PowerTrench MOSFET in the Power_Management category. The extracted package information lists TO-263AB, and ordering data identifies the ordering device as FDB3632-F085 with device marking FDB3632.
What are the main voltage and current ratings?
The datasheet facts list a 100 V drain-to-source maximum rating at TC=25°C and a ±20 V gate-to-source maximum rating. Continuous drain current is 80 A at TC<111°C with VGS=10V, and 12 A at Tamb=25°C with RθJA=43°C/W.
What on-resistance is specified for this MOSFET?
Drain-to-source on resistance is specified as 0.0075 Ω typical and 0.009 Ω maximum at ID=80A and VGS=10V. At TC=175°C under the same ID and VGS conditions, it is 0.018 Ω typical and 0.022 Ω maximum.
What packaging and reel information is provided?
The extracted ordering facts list a TO-263AB package, 330 mm reel size, 24 mm tape width, and 800-unit tape-and-reel quantity. The ordering device is FDB3632-F085, and the device marking is FDB3632.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.