Specifications
| Type | Description |
|---|---|
| Part Number | FDB8447L |
| Manufacturer | ON Semiconductor |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-263AB |
| Drain to Source Voltage | 40 V; maximum rating, TC=25°C |
| Gate to Source Voltage | ±20 V; maximum rating, TC=25°C |
| Continuous Drain Current | 50 A; package limited, TC=25°C |
| Continuous Drain Current | 66 A; silicon limited, TC=25°C, Note 1 |
| Continuous Drain Current | 15 A; TA=25°C, Note 1a |
| Pulsed Drain Current | 100 A; maximum rating |
| Drain-Source Avalanche Energy | 153 mJ; starting TJ=25°C, L=1mH, IAS=17.5A, VDD=40V, VGS=10V |
| Power Dissipation | 60 W; TC=25°C |
| Power Dissipation | 3.1 W; TA=25°C, Note 1a |
| Operating Junction Temperature Range | -55 to +150 °C; maximum rating |
| Storage Junction Temperature Range | -55 to +150 °C; maximum rating |
| Thermal Resistance Junction to Case | 2.1 °C/W; RθJC, Note 1 |
| Thermal Resistance Junction to Ambient | 40 °C/W; RθJA, mounted on 1 in² pad of 2 oz copper, Note 1a |
| Thermal Resistance Junction to Ambient | 62.5 °C/W; RθJA, mounted on minimum pad, Note 1b |
| Drain to Source Breakdown Voltage | min 40 V; ID=250 µA, VGS=0 V |
| Breakdown Voltage Temperature Coefficient | typ 35 mV/°C; ID=250 µA, referenced to 25°C |
| Zero Gate Voltage Drain Current | max 1 µA; VDS=32 V, VGS=0 V |
| Gate to Source Leakage Current | max ±100 nA; VGS=±20 V, VDS=0 V |
| Gate to Source Threshold Voltage | min 1 V, typ 1.9 V, max 3 V; VGS=VDS, ID=250 µA |
| Gate to Source Threshold Voltage Temperature Coefficient | typ -5 mV/°C; ID=250 µA, referenced to 25°C |
| Static Drain to Source On Resistance | typ 7.4 mΩ, max 8.5 mΩ; VGS=10 V, ID=14 A |
| Static Drain to Source On Resistance | typ 8.7 mΩ, max 11.0 mΩ; VGS=4.5 V, ID=11 A |
| Static Drain to Source On Resistance | typ 10.8 mΩ, max 12.4 mΩ; VGS=10 V, ID=14 A, TJ=125°C |
| Forward Transconductance | typ 58 S; VDS=5 V, ID=14 A |
| Input Capacitance | typ 1970 pF, max 2620 pF; VDS=20 V, VGS=0 V, f=1 MHz |
| Output Capacitance | typ 250 pF, max 335 pF; VDS=20 V, VGS=0 V, f=1 MHz |
| Reverse Transfer Capacitance | typ 150 pF, max 225 pF; VDS=20 V, VGS=0 V, f=1 MHz |
| Gate Resistance | typ 1.0 Ω; f=1 MHz |
| Turn-On Delay Time | typ 11 ns, max 20 ns; VDD=20 V, ID=14 A, VGS=10 V, RGEN=6 Ω |
| Rise Time | typ 6 ns, max 12 ns; VDD=20 V, ID=14 A, VGS=10 V, RGEN=6 Ω |
| Turn-Off Delay Time | typ 28 ns, max 45 ns; VDD=20 V, ID=14 A, VGS=10 V, RGEN=6 Ω |
| Fall Time | typ 4 ns, max 10 ns; VDD=20 V, ID=14 A, VGS=10 V, RGEN=6 Ω |
| Total Gate Charge | typ 37 nC, max 52 nC; VGS=10 V, VDD=20 V, ID=14 A |
| Total Gate Charge | typ 20 nC, max 28 nC; VGS=5 V, VDD=20 V, ID=14 A |
| Gate to Source Gate Charge | typ 6 nC; VDD=20 V, ID=14 A, VGS=10 V |
| Gate to Drain Miller Charge | typ 7 nC; VDD=20 V, ID=14 A, VGS=10 V |
| Source to Drain Diode Forward Voltage | typ 0.8 V, max 1.2 V; VGS=0 V, IS=14 A, pulse test |
| Reverse Recovery Time | typ 28 ns, max 42 ns; IF=14 A, di/dt=100 A/µs |
| Reverse Recovery Charge | typ 24 nC, max 36 nC; IF=14 A, di/dt=100 A/µs |
| Package Marking | FDB8447L; device marking |
| Reel Size | 330 mm; ordering information |
| Tape Width | 24 mm; ordering information |
| Tape and Reel Quantity | 800 units; ordering information |
| Datasheet Status | request_only |
Product Overview
The FDB8447L is an ON Semiconductor N-Channel PowerTrench MOSFET supplied in a TO-263AB package. Its maximum ratings include 40 V drain-to-source voltage, ±20 V gate-to-source voltage, 50 A package-limited continuous drain current at TC=25°C, 66 A silicon-limited current at TC=25°C, and 100 A pulsed drain current.
Electrical parameters include a minimum 40 V drain-source breakdown voltage, gate threshold range of 1 V to 3 V, and static drain-source on-resistance of typ 7.4 mΩ and max 8.5 mΩ at VGS=10 V and ID=14 A. At VGS=4.5 V and ID=11 A, on-resistance is typ 8.7 mΩ and max 11.0 mΩ.
Dynamic data covers typ 1970 pF input capacitance, typ 37 nC total gate charge at 10 V gate drive, turn-on delay of typ 11 ns, and fall time of typ 4 ns under the stated test conditions. Thermal data includes 2.1°C/W junction-to-case resistance and junction-to-ambient ratings for both 1 in² copper and minimum-pad mounting conditions.
Key Features
- 40 V drain-to-source maximum rating
- ±20 V gate-to-source maximum rating
- 50 A package-limited continuous drain current
- 100 A maximum pulsed drain current
- 153 mJ drain-source avalanche energy rating
- TO-263AB package with FDB8447L device marking
- Typ 7.4 mΩ on-resistance at 10 V gate drive
- Typ 37 nC total gate charge at 10 V
- Typ 1970 pF input capacitance at 1 MHz
- 2.1°C/W junction-to-case thermal resistance
Typical Applications
- Power management switching stages
- 40 V drain-source bus designs
- High-current MOSFET switching
- Pulsed-current power circuits
- TO-263AB surface-mount assemblies
- Gate-driven load control
- Avalanche-rated switching circuits
Procurement Notes
When requesting a quote for FDB8447L, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the FDB8447L?
The FDB8447L is an ON Semiconductor N-Channel PowerTrench MOSFET in the Power_Management category. The extracted package information lists a TO-263AB case and FDB8447L device marking.
What are the main voltage and current ratings?
The maximum drain-to-source voltage is 40 V and the gate-to-source voltage rating is ±20 V. Continuous drain current is listed as 50 A package limited at TC=25°C, 66 A silicon limited at TC=25°C, and 15 A at TA=25°C.
What on-resistance values are specified for FDB8447L?
Static drain-source on-resistance is specified as typ 7.4 mΩ and max 8.5 mΩ at VGS=10 V and ID=14 A. At VGS=4.5 V and ID=11 A, it is typ 8.7 mΩ and max 11.0 mΩ.
What thermal resistance values are given in the datasheet facts?
The extracted thermal data lists 2.1°C/W junction-to-case resistance. Junction-to-ambient resistance is 40°C/W when mounted on a 1 in² pad of 2 oz copper, and 62.5°C/W when mounted on a minimum pad.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.