Specifications
| Type | Description |
|---|---|
| Part Number | FDB8896 |
| Manufacturer | STMicroelectronics |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-263AB |
| Drain to Source Voltage | 30 V; TC=25°C unless otherwise noted |
| Gate to Source Voltage | ±20 V; TC=25°C unless otherwise noted |
| Continuous Drain Current | 93 A; TC=25°C, VGS=10 V; package current limitation is 80 A |
| Continuous Drain Current | 85 A; TC=25°C, VGS=4.5 V; package current limitation is 80 A |
| Continuous Drain Current, Ambient | 19 A; Tamb=25°C, VGS=10 V, RθJA=43°C/W |
| Pulsed Drain Current | Figure 4 A; TC=25°C unless otherwise noted |
| Single Pulse Avalanche Energy | 74 mJ; starting TJ=25°C, L=36 µH, IAS=64 A, VDD=27 V, VGS=10 V |
| Power Dissipation | 80 W; TC=25°C unless otherwise noted |
| Power Dissipation Derating | 0.53 W/°C; derate above 25°C |
| Operating Temperature | -55 to 175 °C; TJ |
| Storage Temperature | -55 to 175 °C; TSTG |
| Thermal Resistance Junction to Case | 1.88 °C/W; TO-263 |
| Thermal Resistance Junction to Ambient | 62 °C/W; TO-263; pulse width=100 s |
| Thermal Resistance Junction to Ambient | 43 °C/W; TO-263, 1 in² copper pad area |
| Package Marking | FDB8896; device marking |
| Reel Size | 330 mm; package marking and ordering information |
| Tape Width | 24 mm; package marking and ordering information |
| Quantity | 800 units; package marking and ordering information |
| Drain to Source Breakdown Voltage | Min 30 V; ID=250 µA, VGS=0 V |
| Zero Gate Voltage Drain Current | Max 1 µA; VDS=24 V, VGS=0 V, TC=25°C |
| Zero Gate Voltage Drain Current | Max 250 µA; VDS=24 V, VGS=0 V, TC=150°C |
| Gate to Source Leakage Current | Max ±100 nA; VGS=±20 V |
| Gate to Source Threshold Voltage | Min 1.2 V, Max 2.5 V; VGS=VDS, ID=250 µA |
| Drain to Source On Resistance | Typ 0.0049 Ω, Max 0.0057 Ω; ID=35 A, VGS=10 V |
| Drain to Source On Resistance | Typ 0.0059 Ω, Max 0.0068 Ω; ID=35 A, VGS=4.5 V |
| Drain to Source On Resistance | Typ 0.0078 Ω, Max 0.0094 Ω; ID=35 A, VGS=10 V, TJ=175°C |
| Input Capacitance | Typ 2525 pF; VDS=15 V, VGS=0 V, f=1 MHz |
| Output Capacitance | Typ 490 pF; VDS=15 V, VGS=0 V, f=1 MHz |
| Reverse Transfer Capacitance | Typ 300 pF; VDS=15 V, VGS=0 V, f=1 MHz |
| Gate Resistance | Typ 2.3 Ω; VGS=0.5 V, f=1 MHz |
| Total Gate Charge at 10 V | Typ 48 nC, Max 67 nC; VGS=0 V to 10 V, VDD=15 V, ID=35 A, Ig=1.0 mA |
| Total Gate Charge at 5 V | Typ 25 nC, Max 36 nC; VGS=0 V to 5 V, VDD=15 V, ID=35 A, Ig=1.0 mA |
| Threshold Gate Charge | Typ 2.3 nC, Max 3.0 nC; VGS=0 V to 1 V, VDD=15 V, ID=35 A, Ig=1.0 mA |
| Gate to Source Gate Charge | Typ 8 nC; VDD=15 V, ID=35 A, Ig=1.0 mA |
| Gate Charge Threshold to Plateau | Typ 5.7 nC; VDD=15 V, ID=35 A, Ig=1.0 mA |
| Gate to Drain Miller Charge | Typ 9.5 nC; VDD=15 V, ID=35 A, Ig=1.0 mA |
| Turn-On Time | Max 167 ns; VGS=10 V, VDD=15 V, ID=35 A, VGS drive=4.5 V, RGS=6.2 Ω |
| Turn-On Delay Time | Typ 9 ns; VGS=10 V, VDD=15 V, ID=35 A, VGS drive=4.5 V, RGS=6.2 Ω |
| Rise Time | Typ 102 ns; VGS=10 V, VDD=15 V, ID=35 A, VGS drive=4.5 V, RGS=6.2 Ω |
| Turn-Off Delay Time | Typ 58 ns; VGS=10 V, VDD=15 V, ID=35 A, VGS drive=4.5 V, RGS=6.2 Ω |
| Fall Time | Typ 44 ns; VGS=10 V, VDD=15 V, ID=35 A, VGS drive=4.5 V, RGS=6.2 Ω |
| Turn-Off Time | Max 153 ns; VGS=10 V, VDD=15 V, ID=35 A, VGS drive=4.5 V, RGS=6.2 Ω |
| Source to Drain Diode Voltage | Max 1.25 V; ISD=35 A |
| Source to Drain Diode Voltage | Max 1.0 V; ISD=20 A |
| Reverse Recovery Time | Max 27 ns; ISD=35 A, dISD/dt=100 A/µs |
| Reverse Recovered Charge | Max 12 nC; ISD=35 A, dISD/dt=100 A/µs |
| Thermal Resistance vs Copper Area Equation | RθJA=26.51+19.84/(0.262+Area); area in square inches, top copper area including gate and source pads |
| Thermal Resistance vs Copper Area Equation | RθJA=26.51+128/(1.69+Area); area in square centimeters, top copper area including gate and source pads |
| Datasheet Status | request_only |
Product Overview
The FDB8896 is an STMicroelectronics N-Channel PowerTrench MOSFET categorized under Power_Management and supplied in a TO-263AB package. Its absolute maximum ratings include 30 V drain-to-source voltage and ±20 V gate-to-source voltage, with continuous drain current ratings of 93 A at VGS=10 V and 85 A at VGS=4.5 V at TC=25°C. The datasheet notes an 80 A package current limitation.
Electrical characteristics include a minimum 30 V drain-to-source breakdown voltage, gate threshold range from 1.2 V to 2.5 V, and low on-resistance values of 0.0049 Ω typical and 0.0057 Ω maximum at ID=35 A and VGS=10 V. At VGS=4.5 V, on-resistance is specified as 0.0059 Ω typical and 0.0068 Ω maximum.
Thermal and assembly data include 80 W power dissipation, 0.53 W/°C derating above 25°C, 1.88°C/W junction-to-case thermal resistance, and junction-to-ambient ratings tied to TO-263 mounting and copper area. Ordering information specifies FDB8896 marking, 330 mm reel size, 24 mm tape width, and 800 units quantity.
Key Features
- 30 V drain-to-source voltage rating
- ±20 V gate-to-source voltage rating
- 93 A drain current at 10 V gate drive
- 85 A drain current at 4.5 V gate drive
- 80 W power dissipation at TC=25°C
- 1.88°C/W junction-to-case thermal resistance
- 0.0049 Ω typical on-resistance at 10 V
- 48 nC typical total gate charge at 10 V
- 27 ns maximum reverse recovery time
- TO-263AB package with FDB8896 marking
Typical Applications
- Power management switching stages
- Low-voltage MOSFET switching
- High-current board-level power paths
- Circuits using TO-263 mounting
- Designs requiring 4.5 V gate drive
- Thermally managed copper-pad layouts
Procurement Notes
When requesting a quote for FDB8896, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the FDB8896?
The FDB8896 is an STMicroelectronics N-Channel PowerTrench MOSFET in the Power_Management category. The extracted datasheet information identifies the package as TO-263AB and the device marking as FDB8896.
What voltage and current ratings are specified for FDB8896?
The datasheet facts list a 30 V drain-to-source voltage rating and ±20 V gate-to-source voltage rating. Continuous drain current is specified as 93 A at VGS=10 V and 85 A at VGS=4.5 V, with an 80 A package current limitation.
What is the on-resistance of FDB8896 at common gate drives?
At ID=35 A and VGS=10 V, drain-to-source on-resistance is 0.0049 Ω typical and 0.0057 Ω maximum. At VGS=4.5 V under the same current condition, it is 0.0059 Ω typical and 0.0068 Ω maximum.
What thermal information is available for the TO-263 package?
The extracted facts specify 1.88°C/W junction-to-case thermal resistance for TO-263. Junction-to-ambient thermal resistance is 62°C/W for TO-263 at 100 s pulse width, or 43°C/W with a 1 in² copper pad area.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.