Specifications
| Type | Description |
|---|---|
| Part Number | FDC638P |
| Manufacturer | onsemi |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TSOT23 6-Lead / SUPERSOT-6, CASE 419BL |
| Drain-Source Voltage | -20 V |
| Gate-Source Voltage | ±8 V |
| Continuous Drain Current | -4.5 A, TA=25°C, Note 1a |
| Pulsed Drain Current | -20 A, TA=25°C |
| Power Dissipation, Note 1a | 1.6 W, single operation, TA=25°C |
| Power Dissipation, Note 1b | 0.8 W, single operation, TA=25°C |
| Operating Junction Temperature Range | -55 to +150 °C, TJ |
| Storage Junction Temperature Range | -55 to +150 °C, TSTG |
| Thermal Resistance Junction-to-Ambient, Note 1a | 78 °C/W, mounted on 1 in² pad of 2 oz copper |
| Thermal Resistance Junction-to-Case | 30 °C/W, TA=25°C, Note 1 |
| Thermal Resistance Junction-to-Ambient, Note 1b | 156 °C/W, mounted on minimum pad of 2 oz copper |
| Drain-Source Breakdown Voltage | min -20 V, VGS=0 V, ID=-250 µA |
| Breakdown Voltage Temperature Coefficient | typ -14 mV/°C, ID=-250 µA, referenced to 25°C |
| Zero Gate Voltage Drain Current | max -1 µA, VDS=-16 V, VGS=0 V |
| Gate-Source Leakage Current Forward | max 100 nA, VGS=8 V, VDS=0 V |
| Gate-Source Leakage Current Reverse | max -100 nA, VGS=-8 V, VDS=0 V |
| Gate Threshold Voltage | min -0.4 V, typ -0.8 V, max -1.5 V, VDS=VGS, ID=-250 µA |
| Gate Threshold Voltage Temperature Coefficient | typ 3 mV/°C, ID=-250 µA, referenced to 25°C |
| Static Drain-Source On-Resistance, -4.5 V Gate | typ 39 mΩ, max 48 mΩ, VGS=-4.5 V, ID=-4.5 A |
| Static Drain-Source On-Resistance, -2.5 V Gate | typ 52 mΩ, max 65 mΩ, VGS=-2.5 V, ID=-3.8 A |
| Static Drain-Source On-Resistance, 125°C | typ 54 mΩ, max 72 mΩ, VGS=-4.5 V, ID=-4.5 A, TJ=125°C |
| On-State Drain Current | min -20 A, VGS=-4.5 V, VDS=-5 V |
| Forward Transconductance | typ 15 S, VDS=-10 V, ID=-4.5 A |
| Input Capacitance | typ 1160 pF, VDS=-10 V, VGS=0 V, f=1.0 MHz |
| Output Capacitance | typ 195 pF, VDS=-10 V, VGS=0 V, f=1.0 MHz |
| Reverse Transfer Capacitance | typ 105 pF, VDS=-10 V, VGS=0 V, f=1.0 MHz |
| Turn-On Delay Time | typ 12 ns, max 22 ns, VDD=-5 V, ID=-1 A, VGS=-4.5 V, RGEN=6 Ω |
| Turn-On Rise Time | typ 9 ns, max 18 ns, VDD=-5 V, ID=-1 A, VGS=-4.5 V, RGEN=6 Ω |
| Turn-Off Delay Time | typ 33 ns, max 53 ns, VDD=-5 V, ID=-1 A, VGS=-4.5 V, RGEN=6 Ω |
| Turn-Off Fall Time | typ 12 ns, max 22 ns, VDD=-5 V, ID=-1 A, VGS=-4.5 V, RGEN=6 Ω |
| Total Gate Charge | typ 10 nC, max 14 nC, VDS=-10 V, ID=-4.5 A, VGS=-4.5 V |
| Gate-Source Charge | typ 2.2 nC, VDS=-10 V, ID=-4.5 A, VGS=-4.5 V |
| Gate-Drain Charge | typ 1.5 nC, VDS=-10 V, ID=-4.5 A, VGS=-4.5 V |
| Maximum Continuous Drain-Source Diode Forward Current | max -1.3 A, IS |
| Drain-Source Diode Forward Voltage | typ -0.73 V, max -1.2 V, VGS=0 V, IS=-1.3 A, pulse test |
| Pulse Test Condition | Pulse width <300 µs, duty cycle <2.0% |
| Device Marking | 638 |
| Reel Size | 7 inch |
| Tape Width | 8 mm |
| Shipping Quantity | 3000 / Tape & Reel |
| Compliance | Pb-Free, Halide Free, RoHS Compliant |
| Datasheet Status | request_only |
Product Overview
The FDC638P from onsemi is a P-channel power MOSFET intended for Power_Management use. It is provided in a TSOT23 6-Lead / SUPERSOT-6, CASE 419BL package, supporting compact layouts where board area and thermal paths are important design constraints.
Electrical ratings include -20 V VDSS, ±8 V VGSS, -4.5 A continuous drain current at TA=25°C, and -20 A pulsed drain current. Static drain-source on-resistance is specified at 39 mΩ typical and 48 mΩ maximum with VGS=-4.5 V and ID=-4.5 A, and 52 mΩ typical and 65 mΩ maximum with VGS=-2.5 V and ID=-3.8 A.
Dynamic parameters include 1160 pF typical input capacitance, 195 pF typical output capacitance, 105 pF typical reverse transfer capacitance, and 10 nC typical total gate charge. The device is marked 638 and ships as 3000 units on 7 inch tape and reel with 8 mm tape width. Compliance is listed as Pb-Free, Halide Free, and RoHS Compliant.
Key Features
- -20 V drain-source voltage rating
- ±8 V gate-source voltage rating
- -4.5 A continuous drain current at TA=25°C
- -20 A pulsed drain current at TA=25°C
- 39 mΩ typical RDS(on) at VGS=-4.5 V
- 52 mΩ typical RDS(on) at VGS=-2.5 V
- 10 nC typical total gate charge
- 1160 pF typical input capacitance
- -55 to +150 °C junction temperature range
- Pb-Free, Halide Free, RoHS Compliant
Typical Applications
- Low-voltage power switching
- P-channel load switching
- Battery power path control
- Compact Power_Management circuits
- Gate-driven MOSFET switching
- Pulsed drain-current switching
Procurement Notes
When requesting a quote for FDC638P, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the FDC638P?
FDC638P is an onsemi P-channel power MOSFET in the Power_Management category. The package is listed as TSOT23 6-Lead / SUPERSOT-6, CASE 419BL.
What are the main voltage and current ratings?
The device has a -20 V drain-source voltage rating, ±8 V gate-source voltage rating, -4.5 A continuous drain current at TA=25°C, and -20 A pulsed drain current at TA=25°C.
What on-resistance values are specified for FDC638P?
Static drain-source on-resistance is 39 mΩ typical and 48 mΩ maximum at VGS=-4.5 V and ID=-4.5 A. At VGS=-2.5 V and ID=-3.8 A, it is 52 mΩ typical and 65 mΩ maximum.
How is the FDC638P supplied for assembly?
The ordering information lists device marking 638, 7 inch reel size, 8 mm tape width, and a shipping quantity of 3000 units per tape and reel.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.