Specifications
| Type | Description |
|---|---|
| Part Number | FDD8447L |
| Manufacturer | Texas Instruments |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | D-PAK (TO-252) |
| Drain-to-Source Voltage | 40 V; MOSFET maximum rating, TC=25°C unless otherwise noted |
| Gate-to-Source Voltage | ±20 V; MOSFET maximum rating, TC=25°C unless otherwise noted |
| Drain Current, Continuous, Package Limited | 50 A; TC=25°C |
| Drain Current, Continuous, Silicon Limited | 57 A; TC=25°C |
| Drain Current, Continuous, Ambient | 15.2 A; TA=25°C, Note 1a |
| Drain Current, Pulsed | 100 A; MOSFET maximum rating |
| Maximum Pulse Diode Current | 100 A; MOSFET maximum rating |
| Drain-Source Avalanche Energy | 153 mJ; starting TJ=25°C, L=1 mH, IAS=17.5 A, VDD=40 V, VGS=10 V |
| Power Dissipation, Case | 44 W; TC=25°C |
| Power Dissipation, Ambient, 1 in² Copper Pad | 3.1 W; TA=25°C, mounted on 1 in² pad of 2 oz copper, Note 1a |
| Power Dissipation, Ambient, Minimum Pad | 1.3 W; TA=25°C, mounted on minimum pad, Note 1b |
| Operating and Storage Junction Temperature Range | -55 to +150 °C; TJ, TSTG |
| Thermal Resistance, Junction-to-Case | 2.8 °C/W; RθJC, guaranteed by design |
| Thermal Resistance, Junction-to-Ambient | 40 °C/W; mounted on 1 in² pad of 2 oz copper, Note 1a |
| Thermal Resistance, Junction-to-Ambient | 96 °C/W; mounted on minimum pad, Note 1b |
| Drain-to-Source Breakdown Voltage | min 40 V; ID=250 µA, VGS=0 V |
| Breakdown Voltage Temperature Coefficient | typ 35 mV/°C; ID=250 µA, referenced to 25°C |
| Zero Gate Voltage Drain Current | max 1 µA; VDS=32 V, VGS=0 V |
| Gate-to-Source Leakage Current | max ±100 nA; VGS=±20 V, VDS=0 V |
| Gate-to-Source Threshold Voltage | min 1.0 V, typ 1.9 V, max 3.0 V; VGS=VDS, ID=250 µA |
| Gate-to-Source Threshold Voltage Temperature Coefficient | typ -5 mV/°C; ID=250 µA, referenced to 25°C |
| Static Drain-to-Source On Resistance | typ 7.0 mΩ, max 8.5 mΩ; VGS=10 V, ID=14 A |
| Static Drain-to-Source On Resistance | typ 8.5 mΩ, max 11.0 mΩ; VGS=4.5 V, ID=11 A |
| Static Drain-to-Source On Resistance | typ 10.4 mΩ, max 14.0 mΩ; VGS=10 V, ID=14 A, TJ=125°C |
| Forward Transconductance | typ 58 S; VDS=5 V, ID=14 A |
| Input Capacitance | typ 1970 pF; VDS=20 V, VGS=0 V, f=1 MHz |
| Output Capacitance | typ 250 pF; VDS=20 V, VGS=0 V, f=1 MHz |
| Reverse Transfer Capacitance | typ 150 pF; VDS=20 V, VGS=0 V, f=1 MHz |
| Gate Resistance | typ 1.27 Ω; f=1 MHz |
| Turn-On Delay Time | typ 12 ns, max 21 ns; VDD=20 V, ID=1 A, VGS=10 V, RGEN=6 Ω |
| Rise Time | typ 12 ns, max 21 ns; VDD=20 V, ID=1 A, VGS=10 V, RGEN=6 Ω |
| Turn-Off Delay Time | typ 38 ns, max 61 ns; VDD=20 V, ID=1 A, VGS=10 V, RGEN=6 Ω |
| Fall Time | typ 9 ns, max 18 ns; VDD=20 V, ID=1 A, VGS=10 V, RGEN=6 Ω |
| Total Gate Charge | typ 37 nC, max 52 nC; VGS=10 V, VDD=20 V, ID=14 A |
| Total Gate Charge | typ 20 nC, max 28 nC; VGS=5 V, VDD=20 V, ID=14 A |
| Gate-to-Source Gate Charge | typ 6 nC; VDD=20 V, ID=14 A |
| Gate-to-Drain Miller Charge | typ 7 nC; VDD=20 V, ID=14 A |
| Maximum Continuous Drain-Source Diode Forward Current | 2.6 A; Note 1a |
| Source-to-Drain Diode Forward Voltage | typ 0.8 V, max 1.2 V; VGS=0 V, IS=14 A, pulse test Note 2 |
| Reverse Recovery Charge | typ 21 nC; IF=14 A, di/dt=100 A/µs |
| Reverse Recovery Time | typ 21 ns; IF=14 A, di/dt=100 A/µs |
| Package Marking | FDD8447L; device marking and ordering information |
| Reel Size | 13 in; ordering information for FDD8447L D-PAK (TO-252) |
| Tape Width | 16 mm; ordering information for FDD8447L D-PAK (TO-252) |
| Quantity | 2500 units; ordering information for FDD8447L D-PAK (TO-252) |
| RoHS Compliance | RoHS compliant; feature list |
| Datasheet Status | request_only |
Product Overview
FDD8447L is a Texas Instruments N-channel PowerTrench MOSFET categorized for Power_Management use. It is supplied in a D-PAK (TO-252) package with package marking FDD8447L, and ordering information specifies 13 in reel packaging, 16 mm tape width, and 2500 units per reel.
Electrical limits include 40 V drain-to-source voltage, ±20 V gate-to-source voltage, 100 A pulsed drain current, and 153 mJ drain-source avalanche energy under the stated 1 mH, IAS=17.5 A test condition. Continuous current ratings are package-, silicon-, and ambient-condition dependent, including 50 A package-limited and 57 A silicon-limited at TC=25°C.
For conduction and switching design, the MOSFET specifies max 8.5 mΩ RDS(on) at VGS=10 V and ID=14 A, max 11.0 mΩ at VGS=4.5 V and ID=11 A, and max 14.0 mΩ at TJ=125°C. Thermal performance is defined by 2.8°C/W junction-to-case resistance and junction-to-ambient values of 40°C/W on a 1 in² 2 oz copper pad or 96°C/W on a minimum pad.
Key Features
- 40 V drain-to-source voltage maximum rating
- ±20 V gate-to-source voltage rating
- 50 A package-limited continuous drain current at TC=25°C
- 57 A silicon-limited continuous drain current at TC=25°C
- 100 A pulsed drain current rating
- Typ 7.0 mΩ RDS(on) at 10 V gate drive
- Typ 8.5 mΩ RDS(on) at 4.5 V gate drive
- 153 mJ drain-source avalanche energy rating
- 2.8°C/W junction-to-case thermal resistance
- RoHS compliant device
Typical Applications
- 40 V power switching stages
- Low RDS(on) load switching
- D-PAK board-mounted power designs
- Pulsed-current MOSFET switching
- 14 A gate-charge evaluated circuits
- Body-diode conduction paths
- Thermally managed copper-pad layouts
Procurement Notes
When requesting a quote for FDD8447L, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the FDD8447L?
FDD8447L is an N-channel PowerTrench MOSFET from Texas Instruments. It is listed in the Power_Management category and supplied in a D-PAK (TO-252) package.
What voltage and current ratings define FDD8447L?
The MOSFET has a 40 V drain-to-source maximum rating and ±20 V gate-to-source maximum rating. Continuous drain current is 50 A package-limited and 57 A silicon-limited at TC=25°C, with 100 A pulsed drain current.
What on-resistance values are specified for FDD8447L?
Static drain-to-source on resistance is typ 7.0 mΩ and max 8.5 mΩ at VGS=10 V, ID=14 A. At VGS=4.5 V and ID=11 A, it is typ 8.5 mΩ and max 11.0 mΩ.
What thermal information is provided for this MOSFET?
The device specifies 2.8°C/W junction-to-case thermal resistance. Junction-to-ambient thermal resistance is 40°C/W on a 1 in² pad of 2 oz copper and 96°C/W on a minimum pad.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.