Specifications
| Type | Description |
|---|---|
| Part Number | FDD86102 |
| Manufacturer | ON Semiconductor |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | D-PAK (TO-252) |
| Drain to Source Voltage | 100 V; maximum rating, TC=25°C |
| Gate to Source Voltage | ±20 V; maximum rating, TC=25°C |
| Continuous Drain Current | 36 A; TC=25°C |
| Continuous Drain Current | 8 A; TA=25°C, Note 1a |
| Pulsed Drain Current | 75 A; Note 4 |
| Single Pulse Avalanche Energy | 121 mJ; Note 3 |
| Power Dissipation | 62 W; TC=25°C |
| Power Dissipation | 3.1 W; TA=25°C, Note 1a |
| Operating Junction Temperature Range | -55 to +150 °C; maximum rating |
| Storage Junction Temperature Range | -55 to +150 °C; maximum rating |
| Thermal Resistance Junction to Case | 2.0 °C/W; RθJC |
| Thermal Resistance Junction to Ambient | 40 °C/W; RθJA, Note 1a, mounted on 1 in² pad of 2 oz copper |
| Device Marking | FDD86102; package marking and ordering information |
| Reel Size | 13 inch; package marking and ordering information |
| Tape Width | 16 mm; package marking and ordering information |
| Quantity | 2500 units; package marking and ordering information |
| Drain to Source Breakdown Voltage | Min 100 V; ID=250 µA, VGS=0 V |
| Breakdown Voltage Temperature Coefficient | Typ 67 mV/°C; ID=250 µA, referenced to 25°C |
| Zero Gate Voltage Drain Current | Max 1 µA; VDS=80 V, VGS=0 V |
| Gate to Source Leakage Current | Max ±100 nA; VGS=±20 V, VDS=0 V |
| Gate to Source Threshold Voltage | Min 2 V, Typ 3.1 V, Max 4 V; VGS=VDS, ID=250 µA |
| Gate Threshold Voltage Temperature Coefficient | Typ -8.5 mV/°C; ID=250 µA, referenced to 25°C |
| Static Drain to Source On Resistance | Typ 19 mΩ, Max 24 mΩ; VGS=10 V, ID=8 A |
| Static Drain to Source On Resistance | Typ 26 mΩ, Max 38 mΩ; VGS=6 V, ID=6 A |
| Static Drain to Source On Resistance | Typ 33 mΩ, Max 44 mΩ; VGS=10 V, ID=8 A, TJ=125°C |
| Forward Transconductance | Typ 21 S; VDS=10 V, ID=8 A |
| Input Capacitance | Typ 780 pF, Max 1035 pF; VDS=50 V, VGS=0 V, f=1 MHz |
| Output Capacitance | Typ 180 pF, Max 240 pF; VDS=50 V, VGS=0 V, f=1 MHz |
| Reverse Transfer Capacitance | Typ 15 pF, Max 25 pF; VDS=50 V, VGS=0 V, f=1 MHz |
| Gate Resistance | Typ 0.4 Ω; dynamic characteristic |
| Turn-On Delay Time | Typ 7.6 ns, Max 15 ns; VDD=50 V, ID=8 A, VGS=10 V, RGEN=6 Ω |
| Rise Time | Typ 3 ns, Max 10 ns; VDD=50 V, ID=8 A, VGS=10 V, RGEN=6 Ω |
| Turn-Off Delay Time | Typ 13.4 ns, Max 24 ns; VDD=50 V, ID=8 A, VGS=10 V, RGEN=6 Ω |
| Fall Time | Typ 2.9 ns, Max 10 ns; VDD=50 V, ID=8 A, VGS=10 V, RGEN=6 Ω |
| Total Gate Charge | Typ 13.4 nC, Max 19 nC; VGS=0 V to 10 V, VDD=50 V, ID=8 A |
| Total Gate Charge | Typ 7.6 nC, Max 11 nC; VGS=0 V to 5 V, VDD=50 V, ID=8 A |
| Gate to Source Gate Charge | Typ 4.0 nC; VDD=50 V, ID=8 A |
| Gate to Drain Miller Charge | Typ 3.7 nC; VDD=50 V, ID=8 A |
| Source to Drain Diode Forward Voltage | Typ 0.8 V, Max 1.3 V; VGS=0 V, IS=8 A, Note 2 |
| Source to Drain Diode Forward Voltage | Typ 0.7 V, Max 1.2 V; VGS=0 V, IS=2.6 A, Note 2 |
| Reverse Recovery Time | Typ 43 ns, Max 68 ns; IF=8 A, di/dt=100 A/µs |
| Reverse Recovery Charge | Typ 43 nC, Max 68 nC; IF=8 A, di/dt=100 A/µs |
| Datasheet Status | request_only |
Product Overview
FDD86102 is an ON Semiconductor N-channel power MOSFET classified under Power_Management. It uses a D-PAK (TO-252) package and carries a 100 V maximum drain-to-source voltage rating with ±20 V gate-to-source voltage capability. Continuous drain current is specified as 36 A at TC=25°C and 8 A at TA=25°C under the noted board mounting condition, with pulsed drain current rated at 75 A.
Key Features
- 100 V drain-to-source voltage maximum rating
- ±20 V gate-to-source voltage maximum rating
- 36 A continuous drain current at TC=25°C
- 75 A pulsed drain current rating
- 121 mJ single pulse avalanche energy
- 24 mΩ maximum RDS(on) at 10 V gate drive
- 38 mΩ maximum RDS(on) at 6 V gate drive
- 13.4 nC typical total gate charge at 10 V drive
- 780 pF typical input capacitance at 50 V
- D-PAK (TO-252) package with FDD86102 marking
Typical Applications
- 100 V MOSFET switching stages
- D-PAK power board assemblies
- Gate-driven power management circuits
- Avalanche-rated switching designs
- Body diode recovery characterized circuits
- Thermally managed drain current paths
Procurement Notes
When requesting a quote for FDD86102, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the FDD86102?
FDD86102 is an ON Semiconductor N-channel power MOSFET in the Power_Management category. The extracted package information identifies it as a D-PAK (TO-252) device.
What voltage and current ratings are specified?
The device has a 100 V drain-to-source maximum rating and ±20 V gate-to-source maximum rating. Continuous drain current is 36 A at TC=25°C and 8 A at TA=25°C under Note 1a.
What on-resistance values are listed for FDD86102?
Static drain-to-source on-resistance is specified as 19 mΩ typical and 24 mΩ maximum at VGS=10 V, ID=8 A. At VGS=6 V and ID=6 A, it is 26 mΩ typical and 38 mΩ maximum.
What thermal limits are provided for this MOSFET?
Operating and storage junction temperature ranges are both -55 to +150°C. Thermal resistance is listed as 2.0°C/W junction-to-case and 40°C/W junction-to-ambient under the noted 1 in², 2 oz copper mounting condition.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.