Specifications
| Type | Description |
|---|---|
| Part Number | FDD8896 |
| Manufacturer | STMicroelectronics |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-252AA / D-PAK for FDD8896; TO-251AA / I-PAK for FDU8896 |
| Drain to Source Voltage | 30 V; maximum rating, TC=25°C |
| Gate to Source Voltage | ±20 V; maximum rating, TC=25°C |
| Continuous Drain Current | 94 A; TC=25°C, VGS=10 V; package current limitation is 35 A |
| Continuous Drain Current | 85 A; TC=25°C, VGS=4.5 V; package current limitation is 35 A |
| Continuous Drain Current | 17 A; Tamb=25°C, VGS=10 V, RθJA=52°C/W |
| Pulsed Drain Current | Figure 4; peak current capability curve |
| Single Pulse Avalanche Energy | 168 mJ; starting TJ=25°C, L=0.43 mH, IAS=28 A, VDD=27 V, VGS=10 V |
| Power Dissipation | 80 W; TC=25°C |
| Power Dissipation Derating | 0.53 W/°C; above 25°C |
| Operating and Storage Temperature | -55 to 175 °C; TJ, TSTG |
| Thermal Resistance Junction to Case | 1.88 °C/W; TO-252, TO-251 |
| Thermal Resistance Junction to Ambient | 100 °C/W; TO-252, TO-251 |
| Thermal Resistance Junction to Ambient | 52 °C/W; TO-252, 1 in² copper pad area |
| Drain to Source Breakdown Voltage | Min 30 V; ID=250 µA, VGS=0 V |
| Zero Gate Voltage Drain Current | Max 1 µA; VDS=24 V, VGS=0 V |
| Zero Gate Voltage Drain Current | Max 250 µA; VDS=24 V, VGS=0 V, TC=150°C |
| Gate to Source Leakage Current | Max ±100 nA; VGS=±20 V |
| Gate to Source Threshold Voltage | Min 1.2 V, Max 2.5 V; VGS=VDS, ID=250 µA |
| Drain to Source On Resistance | Typ 0.0047 Ω, Max 0.0057 Ω; ID=35 A, VGS=10 V |
| Drain to Source On Resistance | Typ 0.0057 Ω, Max 0.0068 Ω; ID=35 A, VGS=4.5 V |
| Drain to Source On Resistance | Typ 0.0075 Ω, Max 0.0092 Ω; ID=35 A, VGS=10 V, TJ=175°C |
| Input Capacitance | Typ 2525 pF; VDS=15 V, VGS=0 V, f=1 MHz |
| Output Capacitance | Typ 490 pF; VDS=15 V, VGS=0 V, f=1 MHz |
| Reverse Transfer Capacitance | Typ 300 pF; VDS=15 V, VGS=0 V, f=1 MHz |
| Gate Resistance | Typ 2.1 Ω; VGS=0.5 V, f=1 MHz |
| Total Gate Charge at 10 V | Typ 46 nC, Max 60 nC; VGS=0 V to 10 V, VDD=15 V, ID=35 A, Ig=1.0 mA |
| Total Gate Charge at 5 V | Typ 24 nC, Max 32 nC; VGS=0 V to 5 V, VDD=15 V, ID=35 A, Ig=1.0 mA |
| Threshold Gate Charge | Typ 2.3 nC, Max 3.0 nC; VGS=0 V to 1 V, VDD=15 V, ID=35 A, Ig=1.0 mA |
| Gate to Source Gate Charge | Typ 6.9 nC; VDD=15 V, ID=35 A, Ig=1.0 mA |
| Gate Charge Threshold to Plateau | Typ 4.6 nC; VDD=15 V, ID=35 A, Ig=1.0 mA |
| Gate to Drain Miller Charge | Typ 9.8 nC; VDD=15 V, ID=35 A, Ig=1.0 mA |
| Turn-On Time | Max 171 ns; VGS=10 V, VDD=15 V, ID=35 A, RGS=6.2 Ω |
| Turn-On Delay Time | Typ 9 ns; VGS=10 V, VDD=15 V, ID=35 A, RGS=6.2 Ω |
| Rise Time | Typ 106 ns; VGS=10 V, VDD=15 V, ID=35 A, RGS=6.2 Ω |
| Turn-Off Delay Time | Typ 53 ns; VGS=10 V, VDD=15 V, ID=35 A, RGS=6.2 Ω |
| Fall Time | Typ 41 ns; VGS=10 V, VDD=15 V, ID=35 A, RGS=6.2 Ω |
| Turn-Off Time | Max 143 ns; VGS=10 V, VDD=15 V, ID=35 A, RGS=6.2 Ω |
| Source to Drain Diode Voltage | Max 1.25 V; ISD=35 A |
| Source to Drain Diode Voltage | Max 1.0 V; ISD=15 A |
| Reverse Recovery Time | Max 27 ns; ISD=35 A, dISD/dt=100 A/µs |
| Reverse Recovered Charge | Max 12 nC; ISD=35 A, dISD/dt=100 A/µs |
| Datasheet Status | request_only |
Product Overview
FDD8896 is an STMicroelectronics N-Channel PowerTrench MOSFET for Power_Management use. The datasheet identifies the FDD8896 package as TO-252AA / D-PAK, while FDU8896 is associated with TO-251AA / I-PAK. The device is specified with a 30 V drain-to-source maximum rating and ±20 V gate-to-source maximum rating at TC=25°C.
Current and thermal limits are central to using this MOSFET correctly. Continuous drain current is specified as 94 A at TC=25°C and VGS=10 V, and 85 A at VGS=4.5 V, with a 35 A package current limitation noted for both cases. Ambient operation is listed at 17 A for Tamb=25°C, VGS=10 V, and RθJA=52°C/W. Power dissipation is 80 W at TC=25°C with 0.53 W/°C derating above 25°C.
Electrical characteristics include 0.0047 Ω typical and 0.0057 Ω maximum RDS(on) at ID=35 A and VGS=10 V. Gate charge, capacitance, switching time, and body-diode recovery data support evaluation in power switching, load control, and low-voltage conversion circuits.
Key Features
- 30 V maximum drain-to-source voltage rating
- ±20 V maximum gate-to-source voltage rating
- 94 A continuous drain current at VGS=10 V, TC=25°C
- 35 A package current limitation noted for case current ratings
- 0.0057 Ω maximum RDS(on) at 35 A, VGS=10 V
- 0.0068 Ω maximum RDS(on) at 35 A, VGS=4.5 V
- 80 W power dissipation at TC=25°C
- -55 to 175°C operating and storage temperature range
- 60 nC maximum total gate charge at 10 V
- 27 ns maximum reverse recovery time at 35 A
Typical Applications
- Low-voltage power switching
- Power management load control
- MOSFET output stages
- Synchronous power paths
- High-current switching circuits
- Avalanche-rated switching designs
- TO-252 D-PAK assemblies
Procurement Notes
When requesting a quote for FDD8896, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the FDD8896?
The FDD8896 is identified as an N-Channel PowerTrench MOSFET from STMicroelectronics in the Power_Management category. The extracted package information lists TO-252AA / D-PAK for FDD8896.
What are the main voltage ratings for FDD8896?
The datasheet facts list a 30 V maximum drain-to-source voltage rating at TC=25°C and a ±20 V maximum gate-to-source voltage rating at TC=25°C. Drain-to-source breakdown voltage is specified as minimum 30 V at ID=250 µA and VGS=0 V.
What current limits are specified for FDD8896?
Continuous drain current is specified as 94 A at TC=25°C and VGS=10 V, and 85 A at VGS=4.5 V, with a 35 A package current limitation. At Tamb=25°C, VGS=10 V, and RθJA=52°C/W, the listed current is 17 A.
What on-resistance values are listed for FDD8896?
At ID=35 A and VGS=10 V, RDS(on) is 0.0047 Ω typical and 0.0057 Ω maximum. At VGS=4.5 V, it is 0.0057 Ω typical and 0.0068 Ω maximum. At TJ=175°C and VGS=10 V, maximum RDS(on) is 0.0092 Ω.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.