Specifications
| Type | Description |
|---|---|
| Part Number | FDG330P |
| Manufacturer | ON Semiconductor |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | SC70-6 surface mount package |
| Channel Type | P-channel; condition: Device description; source page: 2 |
| Gate Drive Specification | 1.8 V specified; condition: Device description; source page: 2 |
| Drain-Source Voltage Rating | -12 V; condition: Absolute maximum rating, TA=25°C; source page: 2 |
| Gate-Source Voltage Rating | ±8 V; condition: Absolute maximum rating, TA=25°C; source page: 2 |
| Continuous Drain Current | -2 A; condition: Absolute maximum rating, TA=25°C, Note 1a; source page: 2 |
| Pulsed Drain Current | -6 A; condition: Absolute maximum rating, TA=25°C; source page: 2 |
| Power Dissipation | 0.75 W; condition: Single operation, TA=25°C, Note 1a; source page: 2 |
| Power Dissipation | 0.48 W; condition: Single operation, TA=25°C, Note 1b; source page: 2 |
| Operating Junction Temperature Range | -55 to +150 °C; condition: Absolute maximum rating; source page: 2 |
| Storage Junction Temperature Range | -55 to +150 °C; condition: Absolute maximum rating; source page: 2 |
| Thermal Resistance Junction-to-Ambient | 260 °C/W; condition: Mounted on minimum pad, Note 1b; source page: 2 |
| Thermal Resistance Junction-to-Ambient | 170 °C/W; condition: Mounted on 1 in² pad of 2 oz copper, Note 1a; source page: 3 |
| Drain-Source Breakdown Voltage | min -12 V; condition: VGS=0 V, ID=-250 µA; source page: 3 |
| Breakdown Voltage Temperature Coefficient | typ -2.7 mV/°C; condition: ID=-250 µA, referenced to 25°C; source page: 3 |
| Zero Gate Voltage Drain Current | max -1 µA; condition: VDS=-10 V, VGS=0 V; source page: 3 |
| Gate-Body Leakage Forward | max 100 nA; condition: VGS=8 V, VDS=0 V; source page: 3 |
| Gate-Body Leakage Reverse | max -100 nA; condition: VGS=-8 V, VDS=0 V; source page: 3 |
| Gate Threshold Voltage | min -0.4 V, typ -0.7 V, max -1.5 V; condition: VDS=VGS, ID=-250 µA; source page: 3 |
| Gate Threshold Voltage Temperature Coefficient | typ 2.3 mV/°C; condition: ID=-250 µA, referenced to 25°C; source page: 3 |
| Static Drain-Source On-Resistance | typ 84 mΩ, max 110 mΩ; condition: VGS=-4.5 V, ID=-2.0 A; source page: 3 |
| Static Drain-Source On-Resistance | typ 107 mΩ, max 150 mΩ; condition: VGS=-2.5 V, ID=-1.7 A; source page: 3 |
| Static Drain-Source On-Resistance | typ 145 mΩ, max 215 mΩ; condition: VGS=-1.8 V, ID=-1.4 A; source page: 3 |
| Static Drain-Source On-Resistance | typ 98 mΩ, max 148 mΩ; condition: VGS=-4.5 V, ID=-2.0 A, TJ=125°C; source page: 3 |
| On-State Drain Current | min -6 A; condition: VGS=-4.5 V, VDS=-5 V; source page: 3 |
| Forward Transconductance | typ 6.8 S; condition: VDS=-5 V, ID=-2.0 A; source page: 3 |
| Input Capacitance | typ 477 pF; condition: VDS=-6.0 V, VGS=0 V, f=1.0 MHz; source page: 3 |
| Output Capacitance | typ 186 pF; condition: VDS=-6.0 V, VGS=0 V, f=1.0 MHz; source page: 3 |
| Reverse Transfer Capacitance | typ 124 pF; condition: VDS=-6.0 V, VGS=0 V, f=1.0 MHz; source page: 3 |
| Turn-On Delay Time | typ 10 ns, max 20 ns; condition: VDD=-6.0 V, ID=1 A, VGS=-4.5 V, RGEN=6 Ω; source page: 3 |
| Turn-On Rise Time | typ 11 ns, max 20 ns; condition: VDD=-6.0 V, ID=1 A, VGS=-4.5 V, RGEN=6 Ω; source page: 3 |
| Turn-Off Delay Time | typ 12 ns, max 22 ns; condition: VDD=-6.0 V, ID=1 A, VGS=-4.5 V, RGEN=6 Ω; source page: 3 |
| Turn-Off Fall Time | typ 18 ns, max 32 ns; condition: VDD=-6.0 V, ID=1 A, VGS=-4.5 V, RGEN=6 Ω; source page: 3 |
| Total Gate Charge | typ 5 nC, max 7 nC; condition: VDS=-6.0 V, ID=-2.0 A, VGS=-4.5 V; source page: 3 |
| Gate-Source Charge | typ 0.8 nC; condition: VDS=-6.0 V, ID=-2.0 A, VGS=-4.5 V; source page: 3 |
| Gate-Drain Charge | typ 1.4 nC; condition: VDS=-6.0 V, ID=-2.0 A, VGS=-4.5 V; source page: 3 |
| Maximum Continuous Drain-Source Diode Forward Current | -0.62 A; condition: Drain-source diode maximum rating; source page: 3 |
| Drain-Source Diode Forward Voltage | typ -0.7 V, max -1.2 V; condition: VGS=0 V, IS=-0.62 A, pulse test; source page: 3 |
| Pulse Test Condition | Pulse width <300 µs, duty cycle <2.0%; condition: Electrical characteristics Note 2; source page: 3 |
| Package Marking | .30; condition: Package marking and ordering information; source page: 2 |
| Reel Size | 7 inch; condition: Ordering information for FDG330P; source page: 2 |
| Tape Width | 8 mm; condition: Ordering information for FDG330P; source page: 2 |
| Quantity | 3000 units; condition: Ordering information for FDG330P; source page: 2 |
| Datasheet Status | request_only |
Product Overview
FDG330P is an ON Semiconductor P-channel PowerTrench MOSFET categorized for Power_Management use. It is supplied in an SC70-6 surface mount package and is specified for 1.8 V gate drive operation, with a -12 V drain-source voltage rating and ±8 V gate-source voltage rating at TA=25°C.
Key Features
- P-channel PowerTrench MOSFET device structure
- Specified for 1.8 V gate drive operation
- -12 V drain-source absolute maximum rating
- ±8 V gate-source absolute maximum rating
- -2 A continuous drain current at TA=25°C
- -6 A pulsed drain current rating
- SC70-6 surface mount package
- Typical 5 nC total gate charge
- Typical 477 pF input capacitance
- Package marking listed as .30
- 7 inch reel with 8 mm tape
- 3000 units per ordering quantity
Typical Applications
- Low-voltage power switching
- P-channel load switching
- 1.8 V gate-drive rails
- Compact surface mount assemblies
- Power management switching stages
- Circuits requiring -12 V MOSFET rating
- Pulsed-current switching applications
- Designs using SC70-6 packages
Procurement Notes
When requesting a quote for FDG330P, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of MOSFET is the FDG330P?
FDG330P is listed as a P-channel PowerTrench MOSFET from ON Semiconductor. The extracted datasheet facts place it in the Power_Management category and identify the package as an SC70-6 surface mount package.
What voltage ratings apply to the FDG330P?
The absolute maximum drain-source voltage rating is -12 V at TA=25°C. The gate-source voltage rating is ±8 V under the same absolute maximum rating conditions.
What on-resistance values are specified for this device?
Static drain-source on-resistance is specified as typical 84 mΩ and maximum 110 mΩ at VGS=-4.5 V, typical 107 mΩ and maximum 150 mΩ at VGS=-2.5 V, and typical 145 mΩ and maximum 215 mΩ at VGS=-1.8 V.
What packaging and ordering details are provided?
The extracted ordering facts list package marking .30, a 7 inch reel, 8 mm tape width, and 3000 units quantity for FDG330P. The package case is identified as SC70-6 surface mount.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.