Specifications
| Type | Description |
|---|---|
| Part Number | FDMS86180 |
| Manufacturer | ON Semiconductor |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | Power 56; 5.00 mm x 6.00 mm package outline, JEDEC MO-240 Issue A Var. AA |
| Drain-to-Source Voltage | 100 V; Maximum rating, TA=25°C |
| Gate-to-Source Voltage | ±20 V; Maximum rating, TA=25°C |
| Continuous Drain Current | 151 A; TC=25°C, Note 5 |
| Continuous Drain Current | 95 A; TC=100°C, Note 5 |
| Continuous Drain Current | 21 A; TA=25°C, Note 1a |
| Pulsed Drain Current | 775 A; Note 4 |
| Single Pulse Avalanche Energy | 486 mJ; Starting TJ=25°C; L=3 mH, IAS=18 A, VDD=100 V, VGS=10 V |
| Power Dissipation | 138 W; TC=25°C |
| Power Dissipation | 2.7 W; TA=25°C, Note 1a |
| Operating Junction Temperature Range | -55 to +150 °C; Maximum rating |
| Storage Temperature Range | -55 to +150 °C; Maximum rating |
| Thermal Resistance Junction-to-Case | 0.9 °C/W; Thermal characteristic |
| Thermal Resistance Junction-to-Ambient | 45 °C/W; Mounted on 1 in² pad of 2 oz copper on 1.5 x 1.5 in FR-4 board, Note 1a |
| Drain-to-Source Breakdown Voltage | min 100 V; ID=250 µA, VGS=0 V |
| Breakdown Voltage Temperature Coefficient | typ 73 mV/°C; ID=250 µA, referenced to 25°C |
| Zero Gate Voltage Drain Current | max 1 µA; VDS=80 V, VGS=0 V |
| Gate-to-Source Leakage Current | max 100 nA; VGS=±20 V, VDS=0 V |
| Gate-to-Source Threshold Voltage | min 2.0 V, typ 3.2 V, max 4.0 V; VGS=VDS, ID=370 µA |
| Gate-to-Source Threshold Voltage Temperature Coefficient | typ -8 mV/°C; ID=370 µA, referenced to 25°C |
| Static Drain-to-Source On-Resistance | typ 2.4 mΩ, max 3.2 mΩ; VGS=10 V, ID=67 A |
| Static Drain-to-Source On-Resistance | typ 3.8 mΩ, max 7.9 mΩ; VGS=6 V, ID=33 A |
| Static Drain-to-Source On-Resistance | typ 4.0 mΩ, max 5.4 mΩ; VGS=10 V, ID=67 A, TJ=125°C |
| Forward Transconductance | typ 144 S; VDS=5 V, ID=67 A |
| Input Capacitance | typ 4439 pF, max 6215 pF; VDS=50 V, VGS=0 V, f=1 MHz |
| Output Capacitance | typ 2663 pF, max 3730 pF; VDS=50 V, VGS=0 V, f=1 MHz |
| Reverse Transfer Capacitance | typ 24 pF, max 55 pF; VDS=50 V, VGS=0 V, f=1 MHz |
| Gate Resistance | min 0.1 Ω, typ 0.8 Ω, max 1.6 Ω; TJ=25°C |
| Turn-On Delay Time | typ 24 ns, max 39 ns; VDD=50 V, ID=67 A, VGS=10 V, RGEN=6 Ω |
| Rise Time | typ 12 ns, max 22 ns; VDD=50 V, ID=67 A, VGS=10 V, RGEN=6 Ω |
| Turn-Off Delay Time | typ 30 ns, max 48 ns; VDD=50 V, ID=67 A, VGS=10 V, RGEN=6 Ω |
| Fall Time | typ 7 ns, max 14 ns; VDD=50 V, ID=67 A, VGS=10 V, RGEN=6 Ω |
| Total Gate Charge | typ 60 nC, max 84 nC; VGS=0 V to 10 V, VDD=50 V, ID=67 A |
| Total Gate Charge | typ 38 nC, max 54 nC; VGS=0 V to 6 V, VDD=50 V, ID=67 A |
| Gate-to-Source Charge | typ 20 nC; VDD=50 V, ID=67 A |
| Gate-to-Drain Miller Charge | typ 12 nC; VDD=50 V, ID=67 A |
| Output Charge | typ 175 nC; VDD=50 V, VGS=0 V |
| Source-to-Drain Diode Forward Voltage | typ 0.7 V, max 1.2 V; VGS=0 V, IS=2.1 A, Note 2 |
| Source-to-Drain Diode Forward Voltage | typ 0.8 V, max 1.3 V; VGS=0 V, IS=67 A, Note 2 |
| Reverse Recovery Time | typ 44 ns, max 71 ns; IF=33 A, di/dt=300 A/µs |
| Reverse Recovery Charge | typ 109 nC, max 207 nC; IF=33 A, di/dt=300 A/µs |
| Reverse Recovery Time | typ 33 ns, max 53 ns; IF=33 A, di/dt=1000 A/µs |
| Reverse Recovery Charge | typ 235 nC, max 376 nC; IF=33 A, di/dt=1000 A/µs |
| Moisture Sensitivity Level | MSL1; Robust package design feature |
| Package Quantity | 3000 units; 13 inch reel, 12 mm tape width |
| Datasheet Status | request_only |
Product Overview
The FDMS86180 is an ON Semiconductor N-channel Power MOSFET categorized under Power_Management. It is supplied in a Power 56 package with a 5.00 mm x 6.00 mm package outline and JEDEC MO-240 Issue A Var. AA mechanical reference. Package-related facts include MSL1 moisture sensitivity and 3000-unit quantity on a 13 inch reel with 12 mm tape width.
Electrical ratings include 100 V maximum drain-to-source voltage, ±20 V maximum gate-to-source voltage, and continuous drain current ratings of 151 A at TC=25°C, 95 A at TC=100°C, and 21 A at TA=25°C under the stated note conditions. Pulsed drain current is rated at 775 A, and single pulse avalanche energy is 486 mJ under the specified test setup.
Switching and drive parameters include 2.4 mΩ typical on-resistance at 10 V gate drive and 67 A drain current, 60 nC typical total gate charge from 0 V to 10 V, and typical switching times of 24 ns turn-on delay, 12 ns rise time, 30 ns turn-off delay, and 7 ns fall time under the listed 50 V, 67 A, 10 V drive condition.
Key Features
- 100 V maximum drain-to-source voltage rating
- ±20 V maximum gate-to-source voltage rating
- 151 A continuous drain current at TC=25°C
- 775 A pulsed drain current capability
- 2.4 mΩ typical RDS(on) at 10 V gate drive
- 60 nC typical total gate charge at 10 V drive
- 0.9 °C/W junction-to-case thermal resistance
- 486 mJ single pulse avalanche energy rating
- MSL1 moisture sensitivity package classification
- 3000 units supplied on 13 inch reel
Typical Applications
- 100 V MOSFET power switching
- High-current drain conduction paths
- Thermal-managed power stages
- Gate-driven switching circuits
- Pulse-current power designs
- Avalanche-rated switching circuits
- Board-level Power 56 assemblies
Procurement Notes
When requesting a quote for FDMS86180, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the FDMS86180?
The FDMS86180 is an ON Semiconductor N-channel Power MOSFET in the Power_Management category. Its package is Power 56 with a 5.00 mm x 6.00 mm outline referenced to JEDEC MO-240 Issue A Var. AA.
What are the main voltage and current ratings?
The device is rated for 100 V drain-to-source voltage and ±20 V gate-to-source voltage at TA=25°C. Continuous drain current is specified as 151 A at TC=25°C, 95 A at TC=100°C, and 21 A at TA=25°C under the stated note conditions.
What on-resistance is specified for this MOSFET?
Static drain-to-source on-resistance is specified as 2.4 mΩ typical and 3.2 mΩ maximum at VGS=10 V and ID=67 A. At VGS=6 V and ID=33 A, it is 3.8 mΩ typical and 7.9 mΩ maximum.
What package and assembly information is available?
The FDMS86180 uses the Power 56 package with a 5.00 mm x 6.00 mm package outline. The extracted facts list MSL1 moisture sensitivity and a package quantity of 3000 units on a 13 inch reel with 12 mm tape width.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.