Specifications
| Type | Description |
|---|---|
| Part Number | FDS5351 |
| Manufacturer | ON Semiconductor |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | SO-8 |
| Drain to Source Voltage | 60 V; maximum rating, TA=25°C unless otherwise noted |
| Gate to Source Voltage | ±20 V; maximum rating, TA=25°C unless otherwise noted |
| Continuous Drain Current | 6.1 A; maximum rating, TA=25°C unless otherwise noted |
| Pulsed Drain Current | 30 A; maximum rating, TA=25°C unless otherwise noted |
| Single Pulse Avalanche Energy | 73 mJ; UIL condition: starting TJ=25°C, L=3 mH, IAS=7 A, VDD=60 V, VGS=10 V |
| Power Dissipation | 5 W; TA=25°C, mounted on 1 in² pad of 2 oz copper |
| Power Dissipation | 2.5 W; TA=25°C, mounted on minimum pad |
| Operating and Storage Junction Temperature Range | -55 to +150 °C; maximum rating |
| Thermal Resistance Junction to Case | 25 °C/W; guaranteed by design |
| Thermal Resistance Junction to Ambient | 50 °C/W; mounted on 1 in² pad, 2 oz copper, 1.5 x 1.5 in FR-4 board |
| Thermal Resistance Junction to Ambient | 125 °C/W; mounted on minimum pad |
| Drain to Source Breakdown Voltage | min 60 V; ID=250 µA, VGS=0 V |
| Breakdown Voltage Temperature Coefficient | typ 55 mV/°C; ID=250 µA, referenced to 25°C |
| Zero Gate Voltage Drain Current | max 1 µA; VDS=48 V, VGS=0 V |
| Gate to Source Leakage Current | max ±100 nA; VGS=±20 V, VDS=0 V |
| Gate to Source Threshold Voltage | min 1.0 V, typ 2.0 V, max 3.0 V; VGS=VDS, ID=250 µA |
| Gate to Source Threshold Voltage Temperature Coefficient | typ -6.2 mV/°C; ID=250 µA, referenced to 25°C |
| Static Drain to Source On Resistance | typ 26.5 mΩ, max 35.0 mΩ; VGS=10 V, ID=6.1 A |
| Static Drain to Source On Resistance | typ 32.4 mΩ, max 42.0 mΩ; VGS=4.5 V, ID=5.5 A |
| Static Drain to Source On Resistance | typ 44.5 mΩ, max 58.8 mΩ; VGS=10 V, ID=6.1 A, TJ=125°C |
| Forward Transconductance | typ 24 S; VDS=5 V, ID=6.1 A |
| Input Capacitance | typ 985 pF, max 1310 pF; VDS=30 V, VGS=0 V, f=1 MHz |
| Output Capacitance | typ 90 pF, max 120 pF; VDS=30 V, VGS=0 V, f=1 MHz |
| Reverse Transfer Capacitance | typ 57 pF, max 75 pF; VDS=30 V, VGS=0 V, f=1 MHz |
| Gate Resistance | typ 1.0 Ω; f=1 MHz |
| Turn-On Delay Time | typ 8 ns, max 14 ns; VDD=30 V, ID=6.1 A, VGS=10 V, RG=6 Ω |
| Rise Time | typ 3 ns, max 6 ns; VDD=30 V, ID=6.1 A, VGS=10 V, RG=6 Ω |
| Turn-Off Delay Time | typ 21 ns, max 40 ns; VDD=30 V, ID=6.1 A, VGS=10 V, RG=6 Ω |
| Fall Time | typ 11 ns, max 20 ns; VDD=30 V, ID=6.1 A, VGS=10 V, RG=6 Ω |
| Total Gate Charge | typ 19 nC, max 27 nC; VGS=0 V to 10 V, VDD=30 V, ID=6.1 A |
| Total Gate Charge | typ 9 nC, max 13 nC; VGS=0 V to 4.5 V, VDD=30 V, ID=6.1 A |
| Gate to Source Charge | typ 3 nC; VDD=30 V, ID=6.1 A |
| Gate to Drain Miller Charge | typ 3.5 nC; VDD=30 V, ID=6.1 A |
| Source to Drain Diode Forward Voltage | typ 0.82 V, max 1.3 V; VGS=0 V, IS=6.1 A, pulse test |
| Source to Drain Diode Forward Voltage | typ 0.76 V, max 1.2 V; VGS=0 V, IS=2.1 A, pulse test |
| Reverse Recovery Time | typ 24 ns, max 38 ns; IF=6.1 A, di/dt=100 A/µs |
| Reverse Recovery Charge | typ 15 nC, max 27 nC; IF=6.1 A, di/dt=100 A/µs |
| Reel Size | 13 in; package marking and ordering information |
| Tape Width | 12 mm; package marking and ordering information |
| Quantity | 2500 units; package marking and ordering information |
| Compliance | RoHS Compliant; feature list |
| Testing | 100% UIL Tested; feature list |
| Datasheet Status | request_only |
Product Overview
The FDS5351 is an ON Semiconductor N-Channel PowerTrench MOSFET categorized for Power_Management use. It is supplied in an SO-8 package and has maximum ratings of 60 V drain-to-source voltage, ±20 V gate-to-source voltage, 6.1 A continuous drain current, and 30 A pulsed drain current.
Electrical characteristics are defined across drive, switching, capacitance, and body-diode behavior. On-resistance is specified as typ 26.5 mΩ and max 35.0 mΩ at VGS=10 V and ID=6.1 A, typ 32.4 mΩ and max 42.0 mΩ at VGS=4.5 V and ID=5.5 A, and typ 44.5 mΩ and max 58.8 mΩ at TJ=125°C. Gate charge is typ 19 nC to 10 V and typ 9 nC to 4.5 V.
Thermal and ruggedness data include 73 mJ single-pulse avalanche energy under the stated UIL condition, 5 W dissipation on a 1 in² 2 oz copper pad, 2.5 W on minimum pad, and a -55 to +150°C operating and storage junction range. Packaging information lists 13 in reel, 12 mm tape width, 2500 units, RoHS compliance, and 100% UIL testing.
Key Features
- 60 V drain-to-source maximum rating
- ±20 V gate-to-source maximum rating
- 6.1 A continuous drain current rating
- 30 A pulsed drain current rating
- 73 mJ single-pulse avalanche energy
- SO-8 package for Power_Management assemblies
- On-resistance to 35.0 mΩ max at 10 V gate drive
- Total gate charge 19 nC typical to 10 V
- Reverse recovery time 24 ns typical
- RoHS compliant and 100% UIL tested
Typical Applications
- Power_Management switching circuits
- 60 V MOSFET power stages
- 4.5 V gate-drive switching
- 10 V gate-drive switching
- Inductive load switching with UIL data
- SO-8 board-level power assemblies
- Body-diode reverse recovery evaluation
Procurement Notes
When requesting a quote for FDS5351, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the FDS5351?
The FDS5351 is an ON Semiconductor N-Channel PowerTrench MOSFET in the Power_Management category. The extracted package information identifies the package case as SO-8.
What are the main voltage and current ratings?
The device is rated for 60 V drain-to-source voltage, ±20 V gate-to-source voltage, 6.1 A continuous drain current, and 30 A pulsed drain current under the listed maximum rating conditions.
What on-resistance values are specified for FDS5351?
At VGS=10 V and ID=6.1 A, static drain-to-source on-resistance is typ 26.5 mΩ and max 35.0 mΩ. At VGS=4.5 V and ID=5.5 A, it is typ 32.4 mΩ and max 42.0 mΩ.
What packaging and compliance details are provided?
Package marking and ordering information lists a 13 in reel, 12 mm tape width, and 2500-unit quantity. The feature list states RoHS Compliant and 100% UIL Tested.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.