Specifications
| Type | Description |
|---|---|
| Part Number | FDS6690A |
| Manufacturer | ON Semiconductor |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | SO-8 |
| Drain-Source Voltage | 30 V; Absolute maximum rating, TA=25°C |
| Gate-Source Voltage | -20 V; Absolute maximum rating, TA=25°C |
| Continuous Drain Current | 11 A; TA=25°C, Note 1a |
| Pulsed Drain Current | 50 A; TA=25°C |
| Power Dissipation | 2.5 W; Single operation, TA=25°C, Note 1a |
| Power Dissipation | 1.0 W; Single operation, TA=25°C, Note 1b |
| Single Pulse Avalanche Energy | 96 mJ; Starting TJ=25°C, L=3 mH, IAS=8 A, VDD=30 V, VGS=10 V |
| Operating Junction Temperature Range | -55 to +150 °C; Absolute maximum rating |
| Storage Junction Temperature Range | -55 to +150 °C; Absolute maximum rating |
| Thermal Resistance Junction-to-Ambient | 50 °C/W; Mounted on 1 in² pad of 2 oz copper, Note 1a |
| Thermal Resistance Junction-to-Ambient | 125 °C/W; Mounted on minimum pad, Note 1b |
| Thermal Resistance Junction-to-Case | 25 °C/W; Note 1 |
| Drain-Source Breakdown Voltage | min 30 V; VGS=0 V, ID=250 µA |
| Breakdown Voltage Temperature Coefficient | typ 25 mV/°C; ID=250 µA, referenced to 25°C |
| Zero Gate Voltage Drain Current | max 1 µA; VDS=24 V, VGS=0 V |
| Zero Gate Voltage Drain Current | max 10 µA; VDS=24 V, VGS=0 V, TJ=55°C |
| Gate-Body Leakage | max -100 nA; VGS=-20 V, VDS=0 V |
| Gate Threshold Voltage | min 1 V, typ 1.9 V, max 3 V; VDS=VGS, ID=250 µA |
| Gate Threshold Voltage Temperature Coefficient | typ -5 mV/°C; ID=250 µA, referenced to 25°C |
| Static Drain-Source On-Resistance | typ 9.8 mΩ, max 12.5 mΩ; VGS=10 V, ID=11 A |
| Static Drain-Source On-Resistance | typ 12.0 mΩ, max 17.0 mΩ; VGS=4.5 V, ID=10 A |
| Static Drain-Source On-Resistance | typ 13.7 mΩ, max 22.0 mΩ; VGS=10 V, ID=11 A, TJ=125°C |
| On-State Drain Current | min 50 A; VGS=10 V, VDS=5 V |
| Forward Transconductance | typ 48 S; VDS=5 V, ID=11 A |
| Input Capacitance | typ 1205 pF; VDS=15 V, VGS=0 V, f=1.0 MHz |
| Output Capacitance | typ 290 pF; VDS=15 V, VGS=0 V, f=1.0 MHz |
| Reverse Transfer Capacitance | typ 115 pF; VDS=15 V, VGS=0 V, f=1.0 MHz |
| Gate Resistance | typ 2.4 Ω; VGS=15 mV, f=1.0 MHz |
| Turn-On Delay Time | typ 9 ns, max 19 ns; VDD=15 V, ID=1 A, VGS=10 V, RGEN=6 Ω |
| Turn-On Rise Time | typ 5 ns, max 10 ns; VDD=15 V, ID=1 A, VGS=10 V, RGEN=6 Ω |
| Turn-Off Delay Time | typ 28 ns, max 44 ns; VDD=15 V, ID=1 A, VGS=10 V, RGEN=6 Ω |
| Turn-Off Fall Time | typ 9 ns, max 19 ns; VDD=15 V, ID=1 A, VGS=10 V, RGEN=6 Ω |
| Total Gate Charge | typ 12 nC, max 16 nC; VDS=15 V, ID=11 A, VGS=5 V |
| Gate-Source Charge | typ 3.4 nC; VDS=15 V, ID=11 A, VGS=5 V |
| Gate-Drain Charge | typ 4.0 nC; VDS=15 V, ID=11 A, VGS=5 V |
| Maximum Continuous Drain-Source Diode Forward Current | 2.1 A; Drain-source diode characteristic maximum rating |
| Drain-Source Diode Forward Voltage | typ 0.74 V, max 1.2 V; VGS=0 V, IS=2.1 A, Note 2 |
| Diode Reverse Recovery Time | typ 24 ns; IF=11 A, diF/dt=100 A/µs |
| Diode Reverse Recovery Charge | typ 27 nC; IF=11 A, diF/dt=100 A/µs |
| Reel Size | 13 inch; Ordering information for device FDS6690A |
| Tape Width | 12 mm; Ordering information for device FDS6690A |
| Quantity | 2500 units; Ordering information for device FDS6690A |
| Datasheet Status | request_only |
Product Overview
The FDS6690A is an ON Semiconductor N-channel logic-level MOSFET categorized under Power_Management. It is supplied in an SO-8 package and is specified with a 30 V drain-source absolute maximum rating at TA=25°C. The device supports 11 A continuous drain current at TA=25°C under Note 1a conditions and 50 A pulsed drain current.
Electrical data includes a gate threshold range of 1 V minimum, 1.9 V typical, and 3 V maximum at VDS=VGS and ID=250 µA. On-resistance is specified at 9.8 mΩ typical and 12.5 mΩ maximum with VGS=10 V and ID=11 A, and 12.0 mΩ typical and 17.0 mΩ maximum with VGS=4.5 V and ID=10 A.
Thermal and assembly-related parameters include 2.5 W power dissipation on a 1 in², 2 oz copper pad and 1.0 W on minimum pad at TA=25°C. Ordering information lists 13 inch reel, 12 mm tape width, and 2500 units quantity.
Key Features
- 30 V drain-source absolute maximum rating
- 11 A continuous drain current at TA=25°C
- 50 A pulsed drain current rating
- 9.8 mΩ typical RDS(on) at 10 V gate drive
- 12.0 mΩ typical RDS(on) at 4.5 V gate drive
- 12 nC typical total gate charge at VGS=5 V
- 96 mJ single pulse avalanche energy rating
- -55 to +150°C junction temperature range
- SO-8 package with 12 mm tape ordering
- 2.1 A continuous drain-source diode current
Typical Applications
- Low-voltage power switching
- Logic-level MOSFET drive circuits
- Pulsed drain-current switching
- SO-8 power management boards
- Circuits using body-diode conduction
- Thermally modeled MOSFET layouts
- Gate-charge-sensitive switching designs
Procurement Notes
When requesting a quote for FDS6690A, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of MOSFET is the FDS6690A?
The FDS6690A is an ON Semiconductor N-channel logic-level MOSFET in the Power_Management category. The extracted package information lists SO-8 as the package case.
What are the main current ratings for FDS6690A?
The device has an 11 A continuous drain current rating at TA=25°C under Note 1a conditions and a 50 A pulsed drain current rating at TA=25°C.
What on-resistance values are specified for this MOSFET?
Static drain-source on-resistance is specified as 9.8 mΩ typical and 12.5 mΩ maximum at VGS=10 V and ID=11 A. At VGS=4.5 V and ID=10 A, it is 12.0 mΩ typical and 17.0 mΩ maximum.
What packaging information is available for FDS6690A ordering?
Ordering information for FDS6690A lists a 13 inch reel, 12 mm tape width, and 2500 units quantity. The package case provided for the device is SO-8.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.