Specifications
| Type | Description |
|---|---|
| Part Number | FDS6990A |
| Manufacturer | ON Semiconductor |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | SO-8 |
| Drain-Source Voltage (VDSS) | 30 V; absolute maximum rating, TA=25°C |
| Gate-Source Voltage (VGSS) | ±20 V; absolute maximum rating, TA=25°C |
| Continuous Drain Current (ID) | 7.5 A; TA=25°C, Note 1a |
| Pulsed Drain Current (ID) | 20 A; TA=25°C |
| Power Dissipation, Single Operation (PD) | 1.6 W; TA=25°C, Note 1a |
| Power Dissipation, Single Operation (PD) | 1.0 W; TA=25°C, Note 1b |
| Power Dissipation, Single Operation (PD) | 0.9 W; TA=25°C, Note 1c |
| Operating Junction Temperature Range (TJ) | -55 to +150 °C; absolute maximum rating |
| Storage Junction Temperature Range (TSTG) | -55 to +150 °C; absolute maximum rating |
| Thermal Resistance Junction-to-Ambient (RθJA) | 78 °C/W; Note 1a, mounted on 0.5 in² pad of 2 oz copper |
| Thermal Resistance Junction-to-Case (RθJC) | 40 °C/W; guaranteed by design, case reference is solder mounting surface of drain pins |
| Drain-Source Breakdown Voltage (BVDSS) | Min 30 V; VGS=0 V, ID=250 µA, TA=25°C |
| Breakdown Voltage Temperature Coefficient | Typ 26 mV/°C; ID=250 µA, referenced to 25°C |
| Zero Gate Voltage Drain Current (IDSS) | Max 1 µA; VDS=24 V, VGS=0 V, TA=25°C |
| Zero Gate Voltage Drain Current (IDSS) | Max 10 µA; VDS=24 V, VGS=0 V, TJ=55°C |
| Gate-Source Leakage (IGSS) | Max ±100 nA; VGS=±20 V, VDS=0 V |
| Gate Threshold Voltage (VGS(th)) | Min 1 V, Typ 1.9 V, Max 3 V; VDS=VGS, ID=250 µA |
| Gate Threshold Voltage Temperature Coefficient | Typ -4 mV/°C; ID=250 µA, referenced to 25°C |
| Static Drain-Source On-Resistance (RDS(on)) | Typ 11 mΩ, Max 18 mΩ; VGS=10 V, ID=7.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | Typ 13 mΩ, Max 23 mΩ; VGS=4.5 V, ID=6.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | Typ 15 mΩ, Max 31 mΩ; VGS=10 V, ID=7.5 A, TJ=125°C |
| On-State Drain Current (ID(on)) | Min 20 A; VGS=10 V, VDS=5 V |
| Forward Transconductance (gFS) | Typ 33 S; VDS=5 V, ID=7.5 A |
| Input Capacitance (Ciss) | Typ 1235 pF; VDS=15 V, VGS=0 V, f=1.0 MHz |
| Output Capacitance (Coss) | Typ 295 pF; VDS=15 V, VGS=0 V, f=1.0 MHz |
| Reverse Transfer Capacitance (Crss) | Typ 120 pF; VDS=15 V, VGS=0 V, f=1.0 MHz |
| Gate Resistance (RG) | Typ 2.3 Ω; VGS=15 mV, f=1.0 MHz |
| Turn-On Delay Time (td(on)) | Typ 10 ns, Max 19 ns; VDD=15 V, ID=1 A, VGS=10 V, RGEN=6 Ω |
| Turn-On Rise Time (tr) | Typ 5 ns, Max 10 ns; VDD=15 V, ID=1 A, VGS=10 V, RGEN=6 Ω |
| Turn-Off Delay Time (td(off)) | Typ 28 ns, Max 44 ns; VDD=15 V, ID=1 A, VGS=10 V, RGEN=6 Ω |
| Turn-Off Fall Time (tf) | Typ 10 ns, Max 19 ns; VDD=15 V, ID=1 A, VGS=10 V, RGEN=6 Ω |
| Total Gate Charge (Qg) | Typ 12 nC, Max 17 nC; VDS=15 V, ID=7.5 A, VGS=5 V |
| Gate-Source Charge (Qgs) | Typ 3.5 nC; VDS=15 V, ID=7.5 A, VGS=5 V |
| Gate-Drain Charge (Qgd) | Typ 4.2 nC; VDS=15 V, ID=7.5 A, VGS=5 V |
| Maximum Continuous Drain-Source Diode Forward Current (IS) | 1.3 A; drain-source diode maximum rating |
| Drain-Source Diode Forward Voltage (VSD) | Typ 0.7 V, Max 1.2 V; VGS=0 V, IS=1.3 A, Note 2 |
| Diode Reverse Recovery Time (trr) | Typ 24 ns; IF=7.5 A, diF/dt=100 A/µs |
| Diode Reverse Recovery Charge (Qrr) | Typ 13 nC; IF=7.5 A, diF/dt=100 A/µs |
| Reel Size | 13 in; package marking and ordering information for FDS6990A |
| Tape Width | 12 mm; package marking and ordering information for FDS6990A |
| Quantity | 2500 units; package marking and ordering information for FDS6990A |
| Datasheet Status | request_only |
Product Overview
FDS6990A is an ON Semiconductor dual N-channel logic-level MOSFET categorized for Power_Management use. It is supplied in an SO-8 package and rated for 30 V drain-source voltage with ±20 V gate-source voltage. At TA=25°C, the continuous drain current rating is 7.5 A, with a 20 A pulsed drain current rating.
The device supports low-resistance conduction under both 10 V and 4.5 V gate drive conditions. Static drain-source on-resistance is specified as 11 mΩ typical, 18 mΩ maximum at VGS=10 V and ID=7.5 A, and 13 mΩ typical, 23 mΩ maximum at VGS=4.5 V and ID=6.5 A. At TJ=125°C, RDS(on) is specified as 15 mΩ typical, 31 mΩ maximum under VGS=10 V and ID=7.5 A.
Switching and gate-drive parameters include 1235 pF typical input capacitance, 12 nC typical total gate charge at VGS=5 V, and nanosecond switching times measured at VDD=15 V, ID=1 A, VGS=10 V, and RGEN=6 Ω. Thermal and assembly data include 78°C/W junction-to-ambient thermal resistance on a 0.5 in² pad of 2 oz copper, 40°C/W junction-to-case thermal resistance, 13 inch reel size, 12 mm tape width, and 2500 units quantity.
Key Features
- Dual N-channel logic-level MOSFET in SO-8 package
- 30 V drain-source voltage absolute maximum rating
- ±20 V gate-source voltage absolute maximum rating
- 7.5 A continuous drain current at TA=25°C
- 20 A pulsed drain current rating at TA=25°C
- 11 mΩ typical RDS(on) at 10 V gate drive
- 13 mΩ typical RDS(on) at 4.5 V gate drive
- 12 nC typical total gate charge at VGS=5 V
- 1235 pF typical input capacitance at 1 MHz
- 78°C/W junction-to-ambient thermal resistance on 2 oz copper
Typical Applications
- Logic-level power switching
- Low-voltage load switching
- SO-8 power management designs
- Gate-driven DC switching
- Synchronous rectification circuits
- Compact dual MOSFET layouts
Procurement Notes
When requesting a quote for FDS6990A, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the FDS6990A?
FDS6990A is a dual N-channel logic-level MOSFET from ON Semiconductor. It is categorized under Power_Management and supplied in an SO-8 package.
What are the main voltage and current ratings?
The device has a 30 V drain-source voltage rating, ±20 V gate-source voltage rating, 7.5 A continuous drain current at TA=25°C, and 20 A pulsed drain current at TA=25°C.
What RDS(on) values are specified for FDS6990A?
RDS(on) is specified as 11 mΩ typical and 18 mΩ maximum at VGS=10 V, ID=7.5 A. At VGS=4.5 V and ID=6.5 A, it is 13 mΩ typical and 23 mΩ maximum.
What package and tape data are listed?
The package case is SO-8. Package marking and ordering information lists a 13 inch reel size, 12 mm tape width, and 2500 units quantity for FDS6990A.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.