Specifications
| Type | Description |
|---|---|
| Part Number | FQP30N06L |
| Manufacturer | ON Semiconductor |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-220, molded 3-lead, JEDEC variation AB |
| Drain-Source Voltage (VDSS) | 60 V; absolute maximum rating, TC=25°C |
| Continuous Drain Current (ID) | 32 A; TC=25°C |
| Continuous Drain Current (ID) | 22.6 A; TC=100°C |
| Pulsed Drain Current (IDM) | 128 A; pulse width limited by maximum junction temperature |
| Gate-Source Voltage (VGSS) | ±20 V; absolute maximum rating |
| Single Pulsed Avalanche Energy (EAS) | 350 mJ; L=400 µH, IAS=32 A, VDD=25 V, RG=25 Ω, starting TJ=25°C |
| Avalanche Current (IAR) | 32 A; repetitive rating, pulse width limited by maximum junction temperature |
| Repetitive Avalanche Energy (EAR) | 7.9 mJ; repetitive rating, pulse width limited by maximum junction temperature |
| Peak Diode Recovery dv/dt | 7.0 V/ns; ISD≤32 A, di/dt≤300 A/µs, VDD≤BVDSS, starting TJ=25°C |
| Power Dissipation (PD) | 79 W; TC=25°C |
| Power Derating | 0.53 W/°C; above 25°C |
| Operating Junction Temperature Range (TJ) | -55 to +175 °C; absolute maximum rating |
| Storage Temperature Range (TSTG) | -55 to +175 °C; absolute maximum rating |
| Lead Temperature for Soldering (TL) | 300 °C; 1/8 inch from case for 5 seconds |
| Thermal Resistance Junction-to-Case (RθJC) | 1.90 °C/W max; thermal characteristic |
| Thermal Resistance Junction-to-Ambient (RθJA) | 62.5 °C/W max; thermal characteristic |
| Top Mark | FQP30N06L; package marking |
| Packing Method | Tube; ordering information |
| Package Quantity | 50 units; TO-220 tube packing |
| Drain-Source Breakdown Voltage (BVDSS) | 60 V min; VGS=0 V, ID=250 µA |
| Breakdown Voltage Temperature Coefficient | 0.06 V/°C typ; ID=250 µA, referenced to 25°C |
| Zero Gate Voltage Drain Current (IDSS) | 1 µA max; VDS=60 V, VGS=0 V |
| Zero Gate Voltage Drain Current (IDSS) | 10 µA max; VDS=48 V, TC=150°C |
| Gate-Body Leakage Current Forward (IGSSF) | 100 nA max; VGS=20 V, VDS=0 V |
| Gate-Body Leakage Current Reverse (IGSSR) | -100 nA max; VGS=-20 V, VDS=0 V |
| Gate Threshold Voltage (VGS(th)) | 1.0 V min, 2.5 V max; VDS=VGS, ID=250 µA |
| Static Drain-Source On-Resistance (RDS(on)) | 0.027 Ω typ, 0.035 Ω max; VGS=10 V, ID=16 A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.035 Ω typ, 0.045 Ω max; VGS=5 V, ID=16 A |
| Forward Transconductance (gFS) | 24 S typ; VDS=25 V, ID=16 A |
| Input Capacitance (Ciss) | 800 pF typ, 1040 pF max; VDS=25 V, VGS=0 V, f=1.0 MHz |
| Output Capacitance (Coss) | 270 pF typ, 350 pF max; VDS=25 V, VGS=0 V, f=1.0 MHz |
| Reverse Transfer Capacitance (Crss) | 50 pF typ, 65 pF max; VDS=25 V, VGS=0 V, f=1.0 MHz |
| Turn-On Delay Time (td(on)) | 15 ns typ, 40 ns max; VDD=30 V, ID=16 A, RG=25 Ω |
| Turn-On Rise Time (tr) | 210 ns typ, 430 ns max; VDD=30 V, ID=16 A, RG=25 Ω |
| Turn-Off Delay Time (td(off)) | 60 ns typ, 130 ns max; VDD=30 V, ID=16 A, RG=25 Ω |
| Turn-Off Fall Time (tf) | 110 ns typ, 230 ns max; VDD=30 V, ID=16 A, RG=25 Ω; essentially independent of operating temperature |
| Total Gate Charge (Qg) | 15 nC typ, 20 nC max; VDS=48 V, ID=32 A, VGS=5 V |
| Gate-Source Charge (Qgs) | 3.5 nC typ; VDS=48 V, ID=32 A, VGS=5 V |
| Gate-Drain Charge (Qgd) | 8.5 nC typ; VDS=48 V, ID=32 A, VGS=5 V; essentially independent of operating temperature |
| Maximum Continuous Drain-Source Diode Forward Current (IS) | 32 A max; drain-source diode rating |
| Maximum Pulsed Drain-Source Diode Forward Current (ISM) | 128 A max; drain-source diode rating |
| Drain-Source Diode Forward Voltage (VSD) | 1.5 V max; VGS=0 V, IS=32 A |
| Reverse Recovery Time (trr) | 60 ns typ; VGS=0 V, IS=32 A, dIF/dt=100 A/µs |
| Reverse Recovery Charge (Qrr) | 90 nC typ; VGS=0 V, IS=32 A, dIF/dt=100 A/µs |
| Maximum Junction Temperature Rating | 175 °C; feature statement |
| Avalanche Test Coverage | 100% avalanche tested; feature statement |
| Datasheet Status | request_only |
Product Overview
The FQP30N06L is an ON Semiconductor N-channel QFET MOSFET categorized for Power_Management use. It is supplied in a TO-220, molded 3-lead package conforming to JEDEC variation AB, with top mark FQP30N06L and tube packing of 50 units. Assembly limits include a 300°C lead temperature rating measured 1/8 inch from the case for 5 seconds.
Its absolute maximum ratings include 60 V drain-source voltage, ±20 V gate-source voltage, 32 A continuous drain current at TC=25°C, 22.6 A at TC=100°C, and 128 A pulsed drain current limited by maximum junction temperature. Thermal limits include 79 W power dissipation at TC=25°C, 0.53 W/°C derating above 25°C, 1.90°C/W maximum junction-to-case resistance, and 62.5°C/W maximum junction-to-ambient resistance.
Electrical data supports low-voltage switching designs, with 60 V minimum breakdown voltage, 1.0 V to 2.5 V gate threshold range, 0.035 Ω maximum RDS(on) at 10 V gate drive, and 0.045 Ω maximum RDS(on) at 5 V gate drive. The device is also specified for avalanche operation, body-diode current, reverse recovery, capacitance, gate charge, and switching timing parameters.
Key Features
- 60 V drain-source voltage absolute maximum rating
- 32 A continuous drain current at TC=25°C
- 128 A pulsed drain current rating
- 0.035 Ω maximum RDS(on) at 10 V gate drive
- 0.045 Ω maximum RDS(on) at 5 V gate drive
- 15 nC typical total gate charge
- 100% avalanche tested with 350 mJ single-pulse EAS
- 175°C maximum junction temperature rating
- TO-220 molded 3-lead JEDEC variation AB package
- 32 A maximum continuous drain-source diode current
Typical Applications
- 60 V power switching circuits
- 32 A drain current designs
- Logic-level gate drive switching
- TO-220 through-hole power assemblies
- Avalanche-rated switching applications
- Body-diode conduction paths
- Thermally managed power stages
Procurement Notes
When requesting a quote for FQP30N06L, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the FQP30N06L?
FQP30N06L is an ON Semiconductor N-channel QFET MOSFET in the Power_Management category. It is supplied in a TO-220 molded 3-lead package, JEDEC variation AB, with FQP30N06L as the package top mark.
What are the main voltage and current ratings?
The device is rated for 60 V drain-source voltage at TC=25°C. Continuous drain current is 32 A at TC=25°C and 22.6 A at TC=100°C, with 128 A pulsed drain current limited by maximum junction temperature.
What RDS(on) values are specified for this MOSFET?
Static drain-source on-resistance is specified as 0.027 Ω typical and 0.035 Ω maximum at VGS=10 V and ID=16 A. At VGS=5 V and ID=16 A, it is 0.035 Ω typical and 0.045 Ω maximum.
What thermal limits apply to the FQP30N06L?
Power dissipation is 79 W at TC=25°C with 0.53 W/°C derating above 25°C. Thermal resistance is 1.90°C/W maximum junction-to-case and 62.5°C/W maximum junction-to-ambient, with a -55 to +175°C junction range.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.