Specifications
| Type | Description |
|---|---|
| Part Number | FQP33N10 |
| Manufacturer | ON Semiconductor |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-220, molded, 3-lead, JEDEC Variation AB |
| Drain-Source Voltage | 100 V; absolute maximum rating, TC=25°C |
| Continuous Drain Current | 33 A; TC=25°C |
| Continuous Drain Current | 23 A; TC=100°C |
| Pulsed Drain Current | 132 A; pulse width limited by maximum junction temperature, Note 1 |
| Gate-Source Voltage | ±25 V; absolute maximum rating, TC=25°C |
| Single Pulsed Avalanche Energy | 435 mJ; L=0.6 mH, IAS=33 A, VDD=25 V, RG=25 Ω, starting TJ=25°C |
| Avalanche Current | 33 A; repetitive rating, pulse width limited by maximum junction temperature |
| Repetitive Avalanche Energy | 12.7 mJ; repetitive rating, pulse width limited by maximum junction temperature |
| Peak Diode Recovery dv/dt | 6.0 V/ns; ISD≤33 A, di/dt≤300 A/µs, VDD≤BVDSS, starting TJ=25°C |
| Power Dissipation | 127 W; TC=25°C |
| Power Derating | 0.85 W/°C; derate above 25°C |
| Operating and Storage Temperature Range | -55 to +175 °C; TJ, TSTG |
| Maximum Lead Temperature for Soldering | 300 °C; 1/8 inch from case for 5 seconds |
| Thermal Resistance Junction-to-Case | 1.18 °C/W max; RθJC |
| Thermal Resistance Junction-to-Ambient | 62.5 °C/W max; RθJA |
| Package Marking | FQP33N10; top mark |
| Packing Method | Tube; TO-220 package |
| Standard Quantity | 50 units; tube packing |
| Drain-Source Breakdown Voltage | 100 V min; VGS=0 V, ID=250 µA |
| Breakdown Voltage Temperature Coefficient | 0.11 V/°C typ; ID=250 µA, referenced to 25°C |
| Zero Gate Voltage Drain Current | 1 µA max; VDS=100 V, VGS=0 V |
| Zero Gate Voltage Drain Current | 10 µA max; VDS=80 V, TC=150°C |
| Gate-Body Leakage Current Forward | 100 nA max; VGS=25 V, VDS=0 V |
| Gate-Body Leakage Current Reverse | -100 nA max; VGS=-25 V, VDS=0 V |
| Gate Threshold Voltage | 2.0 V min, 4.0 V max; VDS=VGS, ID=250 µA |
| Static Drain-Source On-Resistance | 0.040 Ω typ, 0.052 Ω max; VGS=10 V, ID=16.5 A |
| Forward Transconductance | 22 S typ; VDS=40 V, ID=16.5 A |
| Input Capacitance | 1150 pF typ, 1500 pF max; VDS=25 V, VGS=0 V, f=1.0 MHz |
| Output Capacitance | 320 pF typ, 420 pF max; VDS=25 V, VGS=0 V, f=1.0 MHz |
| Reverse Transfer Capacitance | 62 pF typ, 80 pF max; VDS=25 V, VGS=0 V, f=1.0 MHz |
| Turn-On Delay Time | 15 ns typ, 40 ns max; VDD=50 V, ID=33 A, RG=25 Ω |
| Turn-On Rise Time | 195 ns typ, 400 ns max; VDD=50 V, ID=33 A, RG=25 Ω |
| Turn-Off Delay Time | 80 ns typ, 170 ns max; VDD=50 V, ID=33 A, RG=25 Ω |
| Turn-Off Fall Time | 110 ns typ, 230 ns max; VDD=50 V, ID=33 A, RG=25 Ω; essentially independent of operating temperature |
| Total Gate Charge | 38 nC typ, 51 nC max; VDS=80 V, ID=33 A, VGS=10 V |
| Gate-Source Charge | 7.5 nC typ; VDS=80 V, ID=33 A, VGS=10 V |
| Gate-Drain Charge | 18 nC typ; VDS=80 V, ID=33 A, VGS=10 V; essentially independent of operating temperature |
| Maximum Continuous Drain-Source Diode Forward Current | 33 A max; drain-source diode characteristic |
| Maximum Pulsed Drain-Source Diode Forward Current | 132 A max; drain-source diode characteristic |
| Drain-Source Diode Forward Voltage | 1.5 V max; VGS=0 V, IS=33 A |
| Reverse Recovery Time | 80 ns typ; VGS=0 V, IS=33 A, dIF/dt=100 A/µs |
| Reverse Recovery Charge | 0.22 µC typ; VGS=0 V, IS=33 A, dIF/dt=100 A/µs |
| Maximum Junction Temperature Rating | 175°C; feature statement |
| Avalanche Test Coverage | 100% avalanche tested; feature statement |
| Datasheet Status | request_only |
Product Overview
The FQP33N10 is an ON Semiconductor N-channel power MOSFET for Power_Management circuits. It is supplied in a molded, 3-lead TO-220 package using JEDEC Variation AB, with FQP33N10 as the top package marking. The package is tube packed with a standard quantity of 50 units.
The device is rated for 100 V drain-source voltage and 33 A continuous drain current at TC=25°C, derating to 23 A at TC=100°C. Pulsed drain current is listed as 132 A, limited by maximum junction temperature. Gate-source voltage is rated at ±25 V, and the operating and storage junction temperature range is -55 to +175°C.
Key switching and drive parameters include 0.040 Ω typical on-resistance at VGS=10 V and ID=16.5 A, 38 nC typical total gate charge, 15 ns typical turn-on delay time, and 80 ns typical turn-off delay time under the specified 50 V, 33 A, 25 Ω gate-resistance test condition. Thermal data includes 127 W power dissipation at TC=25°C, 0.85 W/°C derating above 25°C, and 1.18°C/W maximum junction-to-case thermal resistance.
The part is specified for avalanche-related operation with 435 mJ single-pulse avalanche energy, 33 A avalanche current, 12.7 mJ repetitive avalanche energy, and 100% avalanche test coverage. Body diode ratings include 33 A continuous forward current, 132 A pulsed forward current, 1.5 V maximum forward voltage, 80 ns typical reverse recovery time, and 0.22 µC typical reverse recovery charge.
Key Features
- 100 V drain-source voltage rating at TC=25°C
- 33 A continuous drain current at TC=25°C
- 23 A continuous drain current at TC=100°C
- 132 A pulsed drain current rating
- 0.052 Ω maximum on-resistance at VGS=10 V
- 38 nC typical total gate charge
- 175°C maximum junction temperature rating
- 100% avalanche tested device
- 435 mJ single pulsed avalanche energy
- TO-220 molded 3-lead JEDEC AB package
Typical Applications
- Power MOSFET switching stages
- 100 V power management circuits
- High-current drain switching
- Gate-driven load control
- Avalanche-rated switching designs
- TO-220 through-hole assemblies
- Drain-source diode conduction paths
Procurement Notes
When requesting a quote for FQP33N10, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What is the voltage rating of the FQP33N10?
The FQP33N10 has a 100 V drain-source voltage absolute maximum rating at TC=25°C. Its drain-source breakdown voltage is also specified as 100 V minimum with VGS=0 V and ID=250 µA.
What current can the FQP33N10 conduct continuously?
The continuous drain current rating is 33 A at TC=25°C and 23 A at TC=100°C. Pulsed drain current is specified as 132 A, with pulse width limited by maximum junction temperature.
What package is used for the FQP33N10?
The device uses a molded 3-lead TO-220 package, JEDEC Variation AB. The package top mark is FQP33N10, and the listed packing method is tube with a standard quantity of 50 units.
What are the key switching parameters for this MOSFET?
At VDD=50 V, ID=33 A, and RG=25 Ω, turn-on delay is 15 ns typical and 40 ns maximum. Turn-off delay is 80 ns typical and 170 ns maximum, with 110 ns typical fall time.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.