Specifications
| Type | Description |
|---|---|
| Part Number | FQP65N06 |
| Manufacturer | ON Semiconductor |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-220, molded, 3-lead, JEDEC variation AB |
| Drain-Source Voltage | 60 V; absolute maximum rating, TC=25°C |
| Continuous Drain Current | 65 A; TC=25°C |
| Continuous Drain Current | 46.1 A; TC=100°C |
| Pulsed Drain Current | 260 A; pulse width limited by maximum junction temperature |
| Gate-Source Voltage | ±25 V; absolute maximum rating |
| Single Pulsed Avalanche Energy | 650 mJ; L=180 µH, IAS=65 A, VDD=25 V, RG=25 Ω, starting TJ=25°C |
| Avalanche Current | 65 A; repetitive rating, pulse width limited by maximum junction temperature |
| Repetitive Avalanche Energy | 15.0 mJ; repetitive rating, pulse width limited by maximum junction temperature |
| Peak Diode Recovery dv/dt | 7.0 V/ns; ISD≤65 A, di/dt≤300 A/µs, VDD≤BVDSS, starting TJ=25°C |
| Power Dissipation | 150 W; TC=25°C |
| Power Dissipation Derating | 1.00 W/°C; above 25°C |
| Operating and Storage Temperature Range | -55 to +175 °C; absolute maximum rating |
| Maximum Lead Temperature for Soldering | 300 °C; 1/8 inch from case for 5 seconds |
| Thermal Resistance Junction-to-Case | 1.00 °C/W max; maximum thermal characteristic |
| Thermal Resistance Junction-to-Ambient | 62.5 °C/W max; maximum thermal characteristic |
| Package Packing Method | Tube; part number FQP65N06, package TO-220 |
| Package Quantity | 50 units; part number FQP65N06, tube packing |
| Drain-Source Breakdown Voltage | 60 V min; VGS=0 V, ID=250 µA |
| Breakdown Voltage Temperature Coefficient | 0.07 V/°C typ; ID=250 µA, referenced to 25°C |
| Zero Gate Voltage Drain Current | 1 µA max; VDS=60 V, VGS=0 V |
| Zero Gate Voltage Drain Current | 10 µA max; VDS=48 V, TC=150°C |
| Gate-Body Leakage Current Forward | 100 nA max; VGS=25 V, VDS=0 V |
| Gate-Body Leakage Current Reverse | -100 nA max; VGS=-25 V, VDS=0 V |
| Gate Threshold Voltage | 2.0 V min, 4.0 V max; VDS=VGS, ID=250 µA |
| Static Drain-Source On-Resistance | 0.012 Ω typ, 0.016 Ω max; VGS=10 V, ID=32.5 A |
| Forward Transconductance | 48 S typ; VDS=25 V, ID=32.5 A |
| Input Capacitance | 1850 pF typ, 2410 pF max; VDS=25 V, VGS=0 V, f=1.0 MHz |
| Output Capacitance | 700 pF typ, 910 pF max; VDS=25 V, VGS=0 V, f=1.0 MHz |
| Reverse Transfer Capacitance | 100 pF typ, 130 pF max; VDS=25 V, VGS=0 V, f=1.0 MHz |
| Turn-On Delay Time | 20 ns typ, 50 ns max; VDD=30 V, ID=32.5 A, RG=25 Ω |
| Turn-On Rise Time | 160 ns typ, 330 ns max; VDD=30 V, ID=32.5 A, RG=25 Ω |
| Turn-Off Delay Time | 90 ns typ, 190 ns max; VDD=30 V, ID=32.5 A, RG=25 Ω |
| Turn-Off Fall Time | 105 ns typ, 220 ns max; VDD=30 V, ID=32.5 A, RG=25 Ω; essentially independent of operating temperature |
| Total Gate Charge | 48 nC typ, 65 nC max; VDS=48 V, ID=65 A, VGS=10 V |
| Gate-Source Charge | 12 nC typ; VDS=48 V, ID=65 A, VGS=10 V |
| Gate-Drain Charge | 19.5 nC typ; VDS=48 V, ID=65 A, VGS=10 V; essentially independent of operating temperature |
| Maximum Continuous Drain-Source Diode Forward Current | 65 A max; drain-source diode characteristic |
| Maximum Pulsed Drain-Source Diode Forward Current | 260 A max; drain-source diode characteristic |
| Drain-Source Diode Forward Voltage | 1.5 V max; VGS=0 V, IS=65 A |
| Reverse Recovery Time | 62 ns typ; VGS=0 V, IS=65 A, dIF/dt=100 A/µs |
| Reverse Recovery Charge | 110 nC typ; VGS=0 V, IS=65 A, dIF/dt=100 A/µs |
| Maximum Junction Temperature Rating | 175°C; feature statement |
| Avalanche Test Coverage | 100% avalanche tested; feature statement |
| Datasheet Status | request_only |
Product Overview
The FQP65N06 is an ON Semiconductor N-Channel QFET MOSFET categorized for Power_Management use. Its ratings include 60 V drain-source voltage, 65 A continuous drain current at TC=25°C, and 46.1 A at TC=100°C, with a 260 A pulsed drain-current limit tied to maximum junction temperature.
Electrical characteristics include 60 V minimum drain-source breakdown voltage at VGS=0 V and ID=250 µA, 2.0 V minimum to 4.0 V maximum gate threshold voltage, and 0.012 Ω typical / 0.016 Ω maximum static drain-source on-resistance at VGS=10 V and ID=32.5 A. Gate charge is specified at 48 nC typical and 65 nC maximum under VDS=48 V, ID=65 A, and VGS=10 V.
The device is supplied in a TO-220 molded, 3-lead JEDEC variation AB package, with tube packing in quantities of 50 units. Thermal limits include 150 W power dissipation at TC=25°C, 1.00 °C/W maximum junction-to-case thermal resistance, 62.5 °C/W maximum junction-to-ambient thermal resistance, and a -55 to +175°C operating and storage range.
Key Features
- 60 V drain-source voltage rating
- 65 A continuous drain current at TC=25°C
- 260 A pulsed drain current capability
- 0.016 Ω maximum on-resistance at VGS=10 V
- ±25 V gate-source voltage rating
- 150 W power dissipation at TC=25°C
- -55 to +175°C operating and storage range
- 1.00 °C/W maximum junction-to-case thermal resistance
- 650 mJ single pulsed avalanche energy
- 100% avalanche tested device statement
Typical Applications
- 60 V power switching
- 65 A load switching
- TO-220 power designs
- Avalanche-rated switching circuits
- Body-diode conduction paths
- Gate-driven MOSFET stages
Procurement Notes
When requesting a quote for FQP65N06, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the FQP65N06?
The FQP65N06 is an ON Semiconductor N-Channel QFET MOSFET categorized under Power_Management. It is supplied in a TO-220 molded 3-lead package using JEDEC variation AB.
What are the main current ratings for FQP65N06?
The device is rated for 65 A continuous drain current at TC=25°C and 46.1 A at TC=100°C. Its pulsed drain current rating is 260 A, limited by maximum junction temperature.
What on-resistance is specified for this MOSFET?
Static drain-source on-resistance is specified as 0.012 Ω typical and 0.016 Ω maximum when measured at VGS=10 V and ID=32.5 A.
What thermal limits apply to FQP65N06?
Thermal data includes 150 W power dissipation at TC=25°C, 1.00 W/°C derating above 25°C, 1.00 °C/W maximum junction-to-case thermal resistance, and 62.5 °C/W maximum junction-to-ambient thermal resistance.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.