Specifications
| Type | Description |
|---|---|
| Part Number | HUF76407D3S |
| Manufacturer | ON Semiconductor |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package Case | JEDEC TO-252AA |
| Drain-to-Source Voltage | 60 V; absolute maximum rating, TC=25°C |
| Drain-to-Gate Voltage | 60 V; RGS=20 kOhm, TC=25°C |
| Gate-to-Source Voltage | ±16 V; absolute maximum rating, TC=25°C |
| Continuous Drain Current | 11 A; TC=25°C, VGS=5 V |
| Continuous Drain Current | 12 A; TC=25°C, VGS=10 V |
| Continuous Drain Current | 6 A; TC=135°C, VGS=5 V |
| Continuous Drain Current | 6 A; TC=135°C, VGS=4.5 V |
| Power Dissipation | 38 W; TC=25°C |
| Power Derating | 0.25 W/°C; above 25°C |
| Operating and Storage Temperature | -55 to 175 °C; TJ, TSTG |
| Lead Soldering Temperature | 300 °C; leads at 0.063 in / 1.6 mm from case for 10 s |
| Package Body Soldering Temperature | 260 °C; package body for 10 s |
| Drain-to-Source Breakdown Voltage | min 60 V; ID=250 µA, VGS=0 V, TC=25°C |
| Drain-to-Source Breakdown Voltage | min 55 V; ID=250 µA, VGS=0 V, TC=-40°C |
| Zero Gate Voltage Drain Current | max 1 µA; VDS=55 V, VGS=0 V |
| Zero Gate Voltage Drain Current | max 250 µA; VDS=50 V, VGS=0 V, TC=150°C |
| Gate-to-Source Leakage Current | max ±100 nA; VGS=±16 V |
| Gate-to-Source Threshold Voltage | min 1 V, max 3 V; VGS=VDS, ID=250 µA |
| Drain-to-Source On Resistance | typ 0.077 Ohm, max 0.092 Ohm; ID=13 A, VGS=10 V |
| Drain-to-Source On Resistance | typ 0.095 Ohm, max 0.107 Ohm; ID=8 A, VGS=5 V |
| Drain-to-Source On Resistance | typ 0.107 Ohm, max 0.117 Ohm; ID=8 A, VGS=4.5 V |
| Thermal Resistance Junction-to-Case | max 3.94 °C/W; TO-252 package |
| Thermal Resistance Junction-to-Ambient | max 100 °C/W; specified thermal condition not detailed |
| Turn-On Time | max 170 ns; VGS=4.5 V, VDD=30 V, ID=8 A, RGS=32 Ohm |
| Turn-On Delay Time | typ 8 ns; VGS=4.5 V, VDD=30 V, ID=8 A, RGS=32 Ohm |
| Rise Time | typ 105 ns; VGS=4.5 V, VDD=30 V, ID=8 A, RGS=32 Ohm |
| Turn-Off Delay Time | typ 22 ns; VGS=4.5 V, VDD=30 V, ID=8 A, RGS=32 Ohm |
| Fall Time | typ 39 ns; VGS=4.5 V, VDD=30 V, ID=8 A, RGS=32 Ohm |
| Turn-Off Time | max 92 ns; VGS=4.5 V, VDD=30 V, ID=8 A, RGS=32 Ohm |
| Turn-On Time | max 56 ns; VGS=10 V, VDD=30 V, ID=13 A, RGS=32 Ohm |
| Turn-On Delay Time | typ 5 ns; VGS=10 V, VDD=30 V, ID=13 A, RGS=32 Ohm |
| Rise Time | typ 32 ns; VGS=10 V, VDD=30 V, ID=13 A, RGS=32 Ohm |
| Turn-Off Delay Time | typ 43 ns; VGS=10 V, VDD=30 V, ID=13 A, RGS=32 Ohm |
| Fall Time | typ 45 ns; VGS=10 V, VDD=30 V, ID=13 A, RGS=32 Ohm |
| Turn-Off Time | max 132 ns; VGS=10 V, VDD=30 V, ID=13 A, RGS=32 Ohm |
| Total Gate Charge | typ 9.4 nC, max 11.3 nC; VGS=0 to 10 V, VDD=30 V, ID=8 A, Ig(REF)=1.0 mA |
| Gate Charge at 5 V | typ 5.2 nC, max 6.2 nC; VGS=0 to 5 V, VDD=30 V, ID=8 A, Ig(REF)=1.0 mA |
| Threshold Gate Charge | typ 0.36 nC, max 0.43 nC; VGS=0 to 1 V, VDD=30 V, ID=8 A, Ig(REF)=1.0 mA |
| Gate-to-Source Gate Charge | typ 1.2 nC; VDD=30 V, ID=8 A, Ig(REF)=1.0 mA |
| Gate-to-Drain Charge | typ 2.5 nC; VDD=30 V, ID=8 A, Ig(REF)=1.0 mA |
| Input Capacitance | typ 350 pF; VDS=25 V, VGS=0 V, f=1 MHz |
| Output Capacitance | typ 105 pF; VDS=25 V, VGS=0 V, f=1 MHz |
| Reverse Transfer Capacitance | typ 23 pF; VDS=25 V, VGS=0 V, f=1 MHz |
| Source-to-Drain Diode Voltage | max 1.25 V; ISD=8 A |
| Source-to-Drain Diode Voltage | max 1.0 V; ISD=3 A |
| Reverse Recovery Time | max 66 ns; ISD=8 A, dISD/dt=100 A/µs |
| Reverse Recovered Charge | max 159 nC; ISD=8 A, dISD/dt=100 A/µs |
| Datasheet Status | request_only |
Product Overview
The HUF76407D3S is an ON Semiconductor N-channel logic-level power MOSFET intended for Power_Management designs requiring a 60 V drain-to-source rating in a JEDEC TO-252AA package. Its logic-level gate drive specifications include continuous drain current ratings at VGS=5 V, VGS=4.5 V, and VGS=10 V, supporting designs that evaluate operation across different gate-drive conditions.
Electrical limits include ±16 V gate-to-source voltage, 60 V drain-to-gate voltage with RGS=20 kOhm, and drain-to-source breakdown voltage of at least 60 V at TC=25°C. On-resistance is specified at 0.092 Ohm maximum with ID=13 A and VGS=10 V, 0.107 Ohm maximum with ID=8 A and VGS=5 V, and 0.117 Ohm maximum with ID=8 A and VGS=4.5 V.
Thermal and assembly data include 38 W power dissipation at TC=25°C, 0.25 W/°C derating above 25°C, -55 to 175°C junction and storage temperature range, 300°C lead soldering temperature for 10 s, and 260°C package-body soldering temperature for 10 s.
Key Features
- 60 V drain-to-source voltage absolute maximum rating
- ±16 V gate-to-source voltage absolute maximum rating
- 12 A continuous drain current at VGS=10 V
- 11 A continuous drain current at VGS=5 V
- 38 W power dissipation at TC=25°C
- 0.092 Ohm maximum on resistance at VGS=10 V
- 0.107 Ohm maximum on resistance at VGS=5 V
- 9.4 nC typical total gate charge to 10 V
- 350 pF typical input capacitance at 1 MHz
- JEDEC TO-252AA package with 3.94°C/W junction-to-case resistance
Typical Applications
- Logic-level MOSFET switching
- 60 V power management rails
- Low-side power switching
- Gate-driven load control
- TO-252 surface-mount power stages
- Switching circuits using 4.5 V gate drive
- Switching circuits using 10 V gate drive
Procurement Notes
When requesting a quote for HUF76407D3S, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the HUF76407D3S?
The HUF76407D3S is an ON Semiconductor N-channel logic-level power MOSFET in the Power_Management category. The extracted package information identifies it as a JEDEC TO-252AA device.
What voltage ratings are specified for HUF76407D3S?
The datasheet facts specify a 60 V drain-to-source absolute maximum rating at TC=25°C, a 60 V drain-to-gate rating with RGS=20 kOhm, and a ±16 V gate-to-source absolute maximum rating.
What on-resistance values are listed for this MOSFET?
Drain-to-source on resistance is specified as 0.092 Ohm maximum at ID=13 A and VGS=10 V, 0.107 Ohm maximum at ID=8 A and VGS=5 V, and 0.117 Ohm maximum at ID=8 A and VGS=4.5 V.
What thermal limits are provided for HUF76407D3S?
The extracted facts list 38 W power dissipation at TC=25°C, 0.25 W/°C derating above 25°C, -55 to 175°C operating and storage temperature range, and 3.94°C/W maximum junction-to-case thermal resistance.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.