INA128 Precision Instrumentation Amplifier

Texas Instruments Signal_Chain — specifications, applications, sourcing support and RFQ.

INA128 Precision Instrumentation Amplifier

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Part Number
INA128
Manufacturer
Texas Instruments
Package
D (SOIC-8) 4.9 mm × 6 mm; P (PDIP-8) 9.81 mm × 9.43 mm
Category
Signal Chain
Product Type
Operational Amplifier

Quick Sourcing Note

INA128 from Texas Instruments is a Signal_Chain precision instrumentation amplifier supplied in D (SOIC-8) and P (PDIP-8) package options. It supports a gain range from 1 to 10000 V/V using a single external resistor, with the INA128 gain equation G = 1 + 50 kΩ / RG. Key parameters include 50 µV maximum offset voltage, 0.5 µV/°C maximum offset drift, 120 dB minimum common-mode rejection, 8 nV/√Hz typical voltage noise, and ±2.25 V to ±18 V dual-supply operation. The device is specified for -40°C to +85°C operation and suits precision differential signal-conditioning applications.

Specifications

TypeDescription
Part NumberINA128
ManufacturerTexas Instruments
Product TypeOperational Amplifier
CategorySignal Chain
Package / CaseD (SOIC-8) 4.9 mm × 6 mm; P (PDIP-8) 9.81 mm × 9.43 mm
Component TypeOther
Offset Voltage50 µV max; Feature summary; source page 1
Offset Voltage Drift0.5 µV/°C max; Feature summary; source page 1
Input Bias Current5 nA max; CSO: SHE; source page 1
Input Bias Current0.7 nA max; CSO: FRE; source page 1
Voltage Noise8 nV/√Hz typ; Feature summary; source page 1
Low-Frequency Voltage Noise0.2 µVpp typ; Feature summary; source page 1
Common-Mode Rejection120 dB min; Feature summary; source page 1
Bandwidth1.3 MHz typ; G = 1; source page 1
Bandwidth200 kHz typ; G = 100; source page 1
Input Protection Voltage±40 V; Analog inputs protected; source page 1
Supply Voltage Range±2.25 V to ±18 V; Dual supply; source page 1
Quiescent Current700 µA typ; Feature summary; source page 1
Gain Range1 to 10000 V/V; Set by single external resistor; source page 1
Gain EquationG = 1 + 50 kΩ / RG; INA128; source page 1
Gain EquationG = 1 + 49.4 kΩ / RG; INA129; source page 1
Specified Temperature Range-40°C to +85°C; Device specified operating range; source page 1
Absolute Maximum Dual Supply Voltage±18 V max; VS = (V+) - (V-), over operating free-air temperature range; source page 4
Absolute Maximum Single Supply Voltage36 V max; VS = (V+) - 0 V, over operating free-air temperature range; source page 4
Absolute Maximum Analog Input Voltage±40 V max; Over operating free-air temperature range; source page 4
Output Short-Circuit DurationContinuous; Short-circuit to VS / 2; source page 4
Absolute Maximum Operating Temperature-40°C to +125°C; TA; source page 4
Junction Temperature150°C max; Absolute maximum rating; source page 4
Storage Temperature-55°C to +125°C; Tstg; source page 4
ESD Rating HBM±2000 V; ANSI/ESDA/JEDEC JS-001; source page 4
ESD Rating CDM±50 V; JEDEC JESD22-C101; source page 4
Recommended Single-Supply Voltage4.5 V min, 30 V typ, 36 V max; Recommended operating conditions; source page 4
Recommended Dual-Supply Voltage±2.25 V min, ±15 V typ, ±18 V max; Recommended operating conditions; source page 4
Input Common-Mode Voltage Range(V-) + 2 V min to (V+) - 2 V max; VO = 0 V; source page 4
Thermal Resistance Junction-to-Ambient110 °C/W; D package, SOIC-8; source page 5
Thermal Resistance Junction-to-Ambient46.1 °C/W; P package, PDIP-8; source page 5
Differential Input Impedance10 GΩ || 2 pF; TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, VCM = VS / 2, G = 1; source page 5
Common-Mode Input Impedance100 GΩ || 9 pF; TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, VCM = VS / 2, G = 1; source page 5
Common-Mode Rejection Ratio120 dB min, 125 dB typ; G = 100, ΔRS = 1 kΩ, VCM = ±13 V, CSO: SHE, INA12xP/INA12xU; source page 5
Input Bias Current±2 nA typ, ±5 nA max; CSO: SHE, INA12xP/INA12xU; source page 6
Input Bias Current±0.15 nA typ, ±0.6 nA max; CSO: FRE, INA12xU; source page 6
Input Offset Current±1 nA typ, ±5 nA max; CSO: SHE, INA12xP/INA12xU; source page 6
Input Offset Current±0.15 nA typ, ±0.6 nA max; CSO: FRE, INA12xU; source page 6
Input Bias Current Drift±30 pA/°C typ; TA = -40°C to +85°C; source page 6
Voltage Noise Density8 nV/√Hz typ; f = 1 kHz, G = 1000, RS = 0 Ω, CSO: SHE; source page 6
Voltage Noise Density6.9 nV/√Hz typ; f = 1 kHz, G = 1000, RS = 0 Ω, CSO: FRE; source page 6
Voltage Noise0.2 µVpp typ; fB = 0.1 Hz to 10 Hz; source page 6
Current Noise Density0.3 pA/√Hz typ; f = 1 kHz, CSO: SHE; source page 6
Current Noise Density0.17 pA/√Hz typ; f = 1 kHz, CSO: FRE; source page 6
Gain Error±0.01% typ, ±0.024% max; G = 1, CSO: SHE, INA12xP/INA12xU; source page 7
Gain Error±0.05% typ, ±0.5% max; G = 100, CSO: SHE, INA12xP/INA12xU; source page 7
Gain Drift±1 ppm/°C typ, ±10 ppm/°C max; TA = -40°C to +85°C, CSO: SHE; source page 7
Positive Output Voltage Swing(V+) - 1.4 V; CSO: SHE; source page 7
Negative Output Voltage Swing(V-) + 1.4 V; CSO: SHE; source page 7
Load Capacitance1000 pF; Stable operation; source page 7
Bandwidth640 kHz typ; G = 10; source page 8
Bandwidth20 kHz typ; G = 1000, CSO: SHE; source page 8
Slew Rate4 V/µs typ; G = 5, VO = ±10 V, CSO: SHE; source page 8
Settling Time7 µs typ; To 0.01%, G = 1, CSO: SHE; source page 8
Settling Time80 µs typ; To 0.01%, G = 1000; source page 8
Overload Recovery4 µs typ; 50% input overload; source page 8
Quiescent Current±700 µA typ, ±750 µA max; VIN = 0 V; source page 8
Datasheet Statusrequest_only

Product Overview

Package options include D (SOIC-8) at 4.9 mm × 6 mm and P (PDIP-8) at 9.81 mm × 9.43 mm. Recommended supply conditions include 4.5 V to 36 V single-supply operation and ±2.25 V to ±18 V dual-supply operation. The input common-mode voltage range is specified from (V-) + 2 V to (V+) - 2 V at VO = 0 V. Bandwidth is gain-dependent, including 1.3 MHz typical at G = 1, 640 kHz typical at G = 10, 200 kHz typical at G = 100, and 20 kHz typical at G = 1000. These parameters support precision instrumentation amplifier circuits requiring differential input measurement, gain setting, low offset, and high common-mode rejection.

Key Features

  • 50 µV maximum offset voltage
  • 0.5 µV/°C maximum offset voltage drift
  • 120 dB minimum common-mode rejection
  • Gain range from 1 to 10000 V/V
  • Single-resistor gain setting for INA128
  • ±2.25 V to ±18 V dual-supply operation
  • 1.3 MHz typical bandwidth at gain of 1
  • 8 nV/√Hz typical voltage noise density
  • ±40 V analog input protection
  • 700 µA typical quiescent current

Typical Applications

  • Precision differential signal conditioning
  • Instrumentation amplifier gain stages
  • Low-offset measurement circuits
  • High common-mode rejection inputs
  • Single-resistor gain-set designs
  • Dual-supply analog signal chains
  • Low-noise sensor front ends

Procurement Notes

When requesting a quote for INA128, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For analog and signal-chain sourcing, supply voltage, bandwidth, accuracy, noise level, package, temperature grade, input/output configuration and qualification requirements should be verified before approval.

FAQ

What type of device is the INA128?

The INA128 is a Texas Instruments precision instrumentation amplifier in the Signal_Chain category. Its gain is set with a single external resistor across a range from 1 to 10000 V/V.

What supply ranges are specified for INA128 operation?

The extracted facts list ±2.25 V to ±18 V dual-supply operation. Recommended operating conditions also specify 4.5 V minimum, 30 V typical, and 36 V maximum for single-supply operation.

What package options are listed for the INA128?

The listed package options are D (SOIC-8) measuring 4.9 mm × 6 mm and P (PDIP-8) measuring 9.81 mm × 9.43 mm.

How is INA128 gain calculated?

For the INA128, the gain equation is G = 1 + 50 kΩ / RG. The extracted facts also list the related INA129 equation as G = 1 + 49.4 kΩ / RG.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 7, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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