Specifications
| Type | Description |
|---|---|
| Part Number | INA129 |
| Manufacturer | Texas Instruments |
| Product Type | Operational Amplifier |
| Category | Signal Chain |
| Package / Case | D (SOIC, 8) 4.9 mm × 6 mm; P (PDIP, 8) 9.81 mm × 9.43 mm |
| Device function | Low-power general-purpose precision instrumentation amplifier; INA129 device family description |
| Gain equation | G = 1 + (49.4 kΩ / RG); INA129 |
| Gain range | 1 to 10000 V/V; external gain resistor setting |
| Bandwidth | 1.3 MHz; G = 1, -3 dB |
| Bandwidth | 640 kHz; G = 10, -3 dB |
| Bandwidth | 200 kHz; G = 100, -3 dB |
| Bandwidth | 20 kHz typ; G = 1000, CSO: SHE, -3 dB |
| Bandwidth | 33 kHz typ; G = 1000, CSO: FRE, -3 dB |
| Supply voltage | ±2.25 V to ±18 V; recommended operating conditions, dual supply |
| Supply voltage | 4.5 V min, 30 V typ, 36 V max; recommended operating conditions, single supply |
| Absolute maximum dual supply voltage | ±18 V max; VS = (V+) - (V-) |
| Absolute maximum single supply voltage | 36 V max; VS = (V+) - 0 V |
| Analog input voltage | ±40 V max; absolute maximum rating |
| Safe input voltage | ±40 V; RS = 0 Ω |
| Input common-mode voltage range | (V-) + 2 V to (V+) - 2 V; VO = 0 V, recommended operating conditions |
| Specified temperature range | -40°C to +85°C; recommended operating conditions |
| Operating temperature | -40°C to +125°C; absolute maximum ratings |
| Storage temperature | -55°C to +125°C; absolute maximum ratings |
| Junction temperature | 150°C max; absolute maximum ratings |
| Lead temperature | 300°C max; soldering, 10 s |
| ESD rating HBM | ±2000 V; ANSI/ESDA/JEDEC JS-001 |
| ESD rating CDM | ±50 V; JEDEC JESD22-C101 |
| Input offset voltage | ±10 µV typ, ±100/G µV typ, ±50 µV max, ±500/G µV max; INA12xP/INA12xU, CSO: SHE, 1 ≤ G ≤ 10000, RTI, TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, VCM = VS/2, G = 1 unless otherwise noted |
| Input offset voltage | ±20 µV typ, ±50/G µV typ, ±50 µV max, ±500/G µV max; INA12xU, CSO: FRE, 1 ≤ G ≤ 10000, RTI |
| Offset voltage drift | ±0.2 µV/°C typ, ±2/G µV/°C typ, ±0.5 µV/°C max, ±20/G µV/°C max; INA12xP/INA12xU, TA = -40°C to +85°C, RTI |
| Power-supply rejection ratio | ±0.2 µV/V typ, ±20/G µV/V typ, ±1 µV/V max, ±100/G µV/V max; INA12xP/INA12xU, CSO: SHE, VS = ±2.25 V to ±18 V, RTI |
| Power-supply rejection ratio | ±0.1 µV/V typ, ±1/G µV/V typ, ±0.4 µV/V max, ±3.2/G µV/V max; INA12xU, CSO: FRE, VS = ±2.25 V to ±18 V, RTI |
| Input impedance differential | 10 GΩ || 2 pF; electrical characteristics |
| Input impedance common-mode | 100 GΩ || 9 pF; electrical characteristics |
| Common-mode rejection ratio | 80 dB min, 86 dB typ; INA12xP/INA12xU, CSO: SHE, G = 1, ΔRS = 1 kΩ, VCM = ±13 V |
| Common-mode rejection ratio | 100 dB min, 106 dB typ; INA12xP/INA12xU, CSO: SHE, G = 10, ΔRS = 1 kΩ, VCM = ±13 V |
| Common-mode rejection ratio | 120 dB min, 125 dB typ; INA12xP/INA12xU, CSO: SHE, G = 100, ΔRS = 1 kΩ, VCM = ±13 V |
| Common-mode rejection ratio | 120 dB min, 130 dB typ; INA12xP/INA12xU, CSO: SHE, G = 1000, ΔRS = 1 kΩ, VCM = ±13 V |
| Common-mode rejection ratio | 90 dB min, 100 dB typ; INA12xU, CSO: FRE, G = 1, ΔRS = 1 kΩ, VCM = ±13 V |
| Common-mode rejection ratio | 110 dB min, 120 dB typ; INA12xU, CSO: FRE, G = 10, ΔRS = 1 kΩ, VCM = ±13 V |
| Common-mode rejection ratio | 130 dB min, 140 dB typ; INA12xU, CSO: FRE, G = 100, ΔRS = 1 kΩ, VCM = ±13 V |
| Common-mode rejection ratio | 140 dB min, 145 dB typ; INA12xU, CSO: FRE, G = 1000, ΔRS = 1 kΩ, VCM = ±13 V |
| Input bias current | ±2 nA typ, ±5 nA max; INA12xP/INA12xU, CSO: SHE |
| Input bias current | ±0.15 nA typ, ±0.6 nA max; INA12xU, CSO: FRE |
| Input bias current drift | ±30 pA/°C; TA = -40°C to +85°C |
| Input offset current | ±1 nA typ, ±5 nA max; INA12xP/INA12xU, CSO: SHE |
| Input offset current | ±0.15 nA typ, ±0.6 nA max; INA12xU, CSO: FRE |
| Input offset current drift | ±30 pA/°C; TA = -40°C to +85°C |
| Voltage noise density | 10 nV/√Hz typ; CSO: SHE, f = 10 Hz, G = 1000, RS = 0 Ω, RTI |
| Voltage noise density | 7 nV/√Hz typ; CSO: FRE, f = 10 Hz, G = 1000, RS = 0 Ω, RTI |
| Voltage noise density | 8 nV/√Hz typ; CSO: SHE, f = 100 Hz or 1 kHz, G = 1000, RS = 0 Ω, RTI |
| Voltage noise density | 6.9 nV/√Hz typ; CSO: FRE, f = 100 Hz or 1 kHz, G = 1000, RS = 0 Ω, RTI |
| Voltage noise | 0.2 µVpp typ; fB = 0.1 Hz to 10 Hz, G = 1000, RS = 0 Ω, RTI |
| Current noise density | 0.9 pA/√Hz typ; f = 10 Hz |
| Current noise density | 0.3 pA/√Hz typ; CSO: SHE, f = 1 kHz |
| Current noise density | 0.17 pA/√Hz typ; CSO: FRE, f = 1 kHz |
| Current noise | 30 pApp typ; CSO: SHE, fB = 0.1 Hz to 10 Hz |
| Current noise | 4.7 pApp typ; CSO: FRE, fB = 0.1 Hz to 10 Hz |
| Gain error | ±0.01% typ, ±0.024% max; INA12xP/INA12xU, CSO: SHE, G = 1 |
| Gain error | ±0.02% typ, ±0.4% max; INA12xP/INA12xU, CSO: SHE, G = 10 |
| Gain error | ±0.05% typ, ±0.5% max; INA12xP/INA12xU, CSO: SHE, G = 100 |
| Gain error | ±0.5% typ, ±1% max; INA12xP/INA12xU, CSO: SHE, G = 1000 |
| Gain error | ±0.005% typ, ±0.025% max; INA12xU, CSO: FRE, G = 1 |
| Gain error | ±0.025% typ, ±0.15% max; INA12xU, CSO: FRE, G = 10 or G = 100 |
| Gain error | ±0.05% typ, ±1% max; INA12xU, CSO: FRE, G = 1000 |
| Gain drift | ±1 ppm/°C typ, ±10 ppm/°C max; CSO: SHE, TA = -40°C to +85°C |
| Gain drift | ±5 ppm/°C max; CSO: FRE, TA = -40°C to +85°C |
| Gain equation resistor temperature coefficient | ±25 ppm/°C typ, ±100 ppm/°C max; CSO: SHE, 49.4 kΩ term for INA129 gain equation, TA = -40°C to +85°C |
| Gain equation resistor temperature coefficient | ±50 ppm/°C max; CSO: FRE, 49.4 kΩ term for INA129 gain equation, TA = -40°C to +85°C |
| Gain nonlinearity | ±0.0001% of FSR typ, ±0.001% of FSR max; INA12xP/INA12xU, G = 1, VO = ±13.6 V |
| Gain nonlinearity | ±0.0003% of FSR typ, ±0.002% of FSR max; INA12xP/INA12xU, G = 10 |
| Gain nonlinearity | ±0.0005% of FSR typ, ±0.002% of FSR max; INA12xP/INA12xU, G = 100 |
| Gain nonlinearity | ±0.001% of FSR typ; G = 1000; measurement dominated by noise |
| Positive output voltage swing | (V+) - 1.4 V; CSO: SHE |
| Positive output voltage swing | (V+) - 0.15 V; CSO: FRE |
| Negative output voltage swing | (V-) + 1.4 V; CSO: SHE |
| Negative output voltage swing | (V-) + 0.15 V; CSO: FRE |
| Load capacitance | 1000 pF; stable operation |
| Short-circuit current | +18 mA / -15 mA typ; CSO: SHE, continuous to VS/2 |
| Short-circuit current | +16 mA / -18 mA typ; CSO: FRE, continuous to VS/2 |
| Slew rate | 4 V/µs typ; CSO: SHE, G = 5, VO = ±10 V |
| Slew rate | 1.2 V/µs typ; CSO: FRE, G = 5, VO = ±10 V |
| Settling time | 7 µs typ; CSO: SHE, G = 1 or G = 10, to 0.01% |
| Settling time | 12 µs typ; CSO: FRE, G = 1, G = 10, or G = 100, to 0.01% |
| Settling time | 9 µs typ; CSO: SHE, G = 100, to 0.01% |
| Settling time | 80 µs typ; G = 1000, to 0.01% |
| Overload recovery | 4 µs typ; 50% input overload |
| Quiescent current | ±700 µA typ, ±750 µA max; VIN = 0 V |
| Reference pin | Pin 5; reference input; must be driven by low impedance or connected to ground |
| Gain setting pins | Pins 1 and 8; place gain resistor between pin 1 and pin 8 for gains greater than 1 |
| Negative input pin | Pin 2; D (SOIC, 8) and P (PDIP, 8) packages |
| Positive input pin | Pin 3; D (SOIC, 8) and P (PDIP, 8) packages |
| Output pin | Pin 6; D (SOIC, 8) and P (PDIP, 8) packages |
| Negative supply pin | Pin 4; D (SOIC, 8) and P (PDIP, 8) packages |
| Positive supply pin | Pin 7; D (SOIC, 8) and P (PDIP, 8) packages |
| Junction-to-ambient thermal resistance | 110°C/W; D (SOIC), 8 pins |
| Junction-to-ambient thermal resistance | 46.1°C/W; P (PDIP), 8 pins |
| Junction-to-case thermal resistance | 57°C/W; D (SOIC), 8 pins, top |
| Junction-to-case thermal resistance | 34.1°C/W; P (PDIP), 8 pins, top |
| Datasheet Status | request_only |
Product Overview
The INA129 is a Texas Instruments low-power, general-purpose precision instrumentation amplifier in the Signal_Chain category. It uses an external gain resistor between pins 1 and 8 for gains greater than 1, with the INA129 gain equation specified as G = 1 + (49.4 kΩ / RG). The supported gain range is 1 to 10000 V/V.
Signal performance is defined across gain settings. The -3 dB bandwidth is 1.3 MHz at G = 1, 640 kHz at G = 10, 200 kHz at G = 100, and either 20 kHz typical or 33 kHz typical at G = 1000 depending on CSO condition. Common-mode rejection ranges from 80 dB minimum at G = 1 under CSO: SHE to 140 dB minimum at G = 1000 under CSO: FRE.
The device supports ±2.25 V to ±18 V dual supplies and 4.5 V to 36 V single-supply operation. Input common-mode range is (V-) + 2 V to (V+) - 2 V with VO = 0 V. Packages include 8-pin SOIC and 8-pin PDIP, with defined pin assignments for inputs, supplies, reference, output, and gain setting.
Key Features
- Low-power general-purpose precision instrumentation amplifier
- External resistor sets gain from 1 to 10000 V/V
- Gain equation is G = 1 + 49.4 kΩ / RG
- 1.3 MHz bandwidth at G = 1, -3 dB
- ±2.25 V to ±18 V recommended dual supply range
- 4.5 V minimum to 36 V maximum single supply range
- Input common-mode range is (V-) + 2 V to (V+) - 2 V
- 10 GΩ || 2 pF differential input impedance
- 100 GΩ || 9 pF common-mode input impedance
- Reference input on pin 5 requires low-impedance drive
- Gain resistor connects between pins 1 and 8
- Stable operation specified with 1000 pF load capacitance
Typical Applications
- Precision instrumentation gain stages
- Low-power differential signal measurement
- High-impedance sensor signal interfaces
- Common-mode rejection measurement circuits
- External-resistor programmable gain circuits
- Dual-supply precision analog front ends
- Single-supply signal-chain amplification
Procurement Notes
When requesting a quote for INA129, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For analog and signal-chain sourcing, supply voltage, bandwidth, accuracy, noise level, package, temperature grade, input/output configuration and qualification requirements should be verified before approval.
FAQ
How is gain set on the INA129?
INA129 gain is set with an external resistor RG between pins 1 and 8 for gains greater than 1. The specified equation is G = 1 + (49.4 kΩ / RG), and the supported gain range is 1 to 10000 V/V.
What supply voltages does the INA129 support?
The recommended dual-supply operating range is ±2.25 V to ±18 V. For single-supply operation, the listed recommended values are 4.5 V minimum, 30 V typical, and 36 V maximum.
What packages are specified for the INA129?
The extracted package data lists D (SOIC, 8) at 4.9 mm × 6 mm and P (PDIP, 8) at 9.81 mm × 9.43 mm. Pin assignments are provided for both 8-pin package options.
What is the INA129 bandwidth at common gain settings?
The -3 dB bandwidth is specified as 1.3 MHz at G = 1, 640 kHz at G = 10, and 200 kHz at G = 100. At G = 1000, typical bandwidth is 20 kHz under CSO: SHE or 33 kHz under CSO: FRE.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 7, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.