INA823 Precision Instrumentation Amplifier

Texas Instruments Signal_Chain — specifications, applications, sourcing support and RFQ.

INA823 Precision Instrumentation Amplifier

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Part Number
INA823
Manufacturer
Texas Instruments
Package
8-pin SOIC (D), 4.90 mm x 3.91 mm; 8-pin VSSOP (DGK), 3.00 mm x 3.00 mm
Category
Signal Chain
Product Type
Operational Amplifier

Quick Sourcing Note

INA823 from Texas Instruments is a Signal_Chain precision instrumentation amplifier supplied in 8-pin SOIC (D) and 8-pin VSSOP (DGK) packages. It supports 2.7 V to 36 V single-supply operation or ±1.35 V to ±18 V dual-supply operation across -40°C to +125°C. Key parameters include gain from 1 V/V to 10000 V/V using an external RG resistor, 1.9 MHz bandwidth at G = 1, 0.9 V/µs slew rate, 12 GΩ || 8.5 pF input impedance, and ±60 V input overvoltage protection. The device is suited for low-level signal conditioning, precision gain stages, sensor interfaces, and systems requiring high CMRR and PSRR.

Specifications

TypeDescription
Part NumberINA823
ManufacturerTexas Instruments
Product TypeOperational Amplifier
CategorySignal Chain
Package / Case8-pin SOIC (D), 4.90 mm x 3.91 mm; 8-pin VSSOP (DGK), 3.00 mm x 3.00 mm
Supply Voltage2.7 V to 36 V; single-supply operation
Supply Voltage±1.35 V to ±18 V; dual-supply operation
Specified Temperature Range-40°C to +125°C; recommended operating conditions
Input Overvoltage Protection±60 V; TA = -40°C to +125°C
Input Stage Offset Voltage20 µV typ, 100 µV max; TA = 25°C, VS = ±15 V, RL = 10 kΩ, VCM = VREF = 0 V, G = 1
Input Stage Offset Voltage190 µV max; TA = -40°C to +125°C
Input Stage Offset Voltage Drift0.2 µV/°C typ, 1.2 µV/°C max; TA = -40°C to +125°C
Output Stage Offset Voltage140 µV typ, 450 µV max; TA = 25°C, VS = ±15 V, RL = 10 kΩ, VCM = VREF = 0 V, G = 1
Output Stage Offset Voltage850 µV max; TA = -40°C to +125°C
Output Stage Offset Voltage Drift1 µV/°C typ, 5 µV/°C max; TA = -40°C to +125°C
Power-Supply Rejection Ratio100 dB min, 130 dB typ; G = 1, RTI, VS = ±1.35 V to ±18 V
Power-Supply Rejection Ratio115 dB min, 148 dB typ; G = 10, RTI, VS = ±1.35 V to ±18 V
Power-Supply Rejection Ratio120 dB min, 148 dB typ; G = 100 or G = 1000, RTI, VS = ±1.35 V to ±18 V
Input Impedance12 GΩ || 8.5 pF; input pins
RFI Filter -3 dB Frequency20 MHz; input RFI filter
Operating Input Voltage Range(–VS) - 0.15 V to (+VS) - 1 V; VS = ±1.35 V to ±18 V
Common-Mode Rejection Ratio84 dB min, 110 dB typ; G = 1, RTI, dc to 60 Hz, VCM = (V-) - 0.15 V to (V+) - 1 V
Common-Mode Rejection Ratio104 dB min, 136 dB typ; G = 10, RTI, dc to 60 Hz, VCM = (V-) - 0.15 V to (V+) - 1 V
Common-Mode Rejection Ratio120 dB min, 149 dB typ; G ≥ 100, RTI, dc to 60 Hz, VCM = (V-) - 0.15 V to (V+) - 1 V
Input Bias Current1.2 nA typ, 8 nA max; TA = 25°C
Input Bias Current2.4 nA typ; TA = -40°C to +125°C
Input Bias Current Drift15 pA/°C; TA = -40°C to +125°C
Input Offset Current0.4 nA typ, 4 nA max; TA = 25°C
Input Offset Current0.8 nA typ; TA = -40°C to +125°C
Input Offset Current Drift4 pA/°C; TA = -40°C to +125°C
Input Stage Voltage Noise Density21 nV/√Hz; f = 1 kHz, G = 1000, RS = 0 Ω
Input Stage Voltage Noise0.4 µVPP; fB = 0.1 Hz to 10 Hz, G = 1000, RS = 0 Ω
Output Stage Voltage Noise Density120 nV/√Hz; f = 1 kHz, RS = 0 Ω
Output Stage Voltage Noise5 µVPP; fB = 0.1 Hz to 10 Hz, RS = 0 Ω
Current Noise Density160 fA/√Hz; f = 1 kHz
Current Noise5 pAPP; fB = 0.1 Hz to 10 Hz, G = 100
Gain EquationG = 1 + (100 kΩ / RG); external gain resistor between RG pins
Gain Range1 V/V to 10000 V/V; set by external RG resistor
Gain Error±0.01% typ, ±0.04% max; G = 1, VO = ±10 V
Gain Error±0.025% typ, ±0.2% max; G = 10 or G = 100, VO = ±10 V
Gain Error±0.05% typ, ±0.2% max; G = 1000, VO = ±10 V
Gain Drift±0.2 ppm/°C typ, ±5 ppm/°C max; G = 1, TA = -40°C to +125°C
Gain Drift±12 ppm/°C typ, ±35 ppm/°C max; G > 1, TA = -40°C to +125°C, excludes external gain resistor effects
Gain Nonlinearity2 ppm typ, 10 ppm max; G = 1 to 10
Gain Nonlinearity5 ppm typ; G > 10
Gain Nonlinearity15 ppm; G = 1 to 100, RL = 2 kΩ
Output Voltage Swing(–VS) + 0.15 V to (+VS) - 0.15 V; TA = 25°C, VS = ±15 V, RL = 10 kΩ, G = 1
Load Capacitance1000 pF; stable operation
Short-Circuit Current±20 mA; continuous to VS / 2
Bandwidth1.9 MHz; -3 dB, G = 1
Bandwidth350 kHz; -3 dB, G = 10
Bandwidth60 kHz; -3 dB, G = 100
Bandwidth6 kHz; -3 dB, G = 1000
Slew Rate0.9 V/µs; G = 1, VO = ±10 V
Settling Time to 0.01%12 µs; G = 1 to 10, VSTEP = 10 V
Settling Time to 0.01%28 µs; G = 100, VSTEP = 10 V
Settling Time to 0.01%260 µs; G = 1000, VSTEP = 10 V
Settling Time to 0.001%14 µs; G = 1 to 10, VSTEP = 10 V
Settling Time to 0.001%33 µs; G = 100, VSTEP = 10 V
Settling Time to 0.001%290 µs; G = 1000, VSTEP = 10 V
Reference Input Impedance100 kΩ; REF pin
Reference Input Voltage Range(–VS) to (+VS); REF pin
Reference Gain to Output1 V/V; REF pin to output
Reference Gain Error0.01% typ, 0.05% max; inside output voltage swing
Quiescent Current180 µA typ, 250 µA max; VIN = 0 V, TA = 25°C
Quiescent Current300 µA max; VIN = 0 V, TA = -40°C to +125°C
Absolute Maximum Supply Voltage±20 V; dual supply, VS = (+VS) - (–VS)
Absolute Maximum Supply Voltage40 V; single supply, VS = (+VS)
Absolute Maximum IN Pin Voltage(–VS) - 60 V to (+VS) + 60 V; IN pins
Absolute Maximum RG, REF, OUT Pin Voltage(–VS) - 0.5 V to (+VS) + 0.5 V; RG, REF, OUT pins
Absolute Maximum RG Pin Current-10 mA to +10 mA; RG pins
Absolute Maximum OUT Pin Current-50 mA to +50 mA; OUT pin
ESD Rating HBM±2000 V; human-body model, ANSI/ESDA/JEDEC JS-001
ESD Rating CDM±750 V; charged-device model, ANSI/ESDA/JEDEC JS-002
Thermal Resistance Junction-to-Ambient126.7°C/W; D SOIC, 8 pins
Thermal Resistance Junction-to-Ambient167.5°C/W; DGK VSSOP, 8 pins
Pin ConfigurationRG pins 1 and 8; -IN pin 2; +IN pin 3; -VS pin 4; REF pin 5; OUT pin 6; +VS pin 7; 8-pin SOIC and 8-pin VSSOP top view
Datasheet Statusrequest_only

Product Overview

The INA823 is a Texas Instruments precision instrumentation amplifier in the Signal_Chain category. It operates from 2.7 V to 36 V on a single supply or ±1.35 V to ±18 V on dual supplies, with recommended operation over -40°C to +125°C. Input pins include ±60 V overvoltage protection, and the input impedance is specified as 12 GΩ || 8.5 pF.

Gain is set with an external resistor between the RG pins using G = 1 + (100 kΩ / RG), covering 1 V/V to 10000 V/V. Bandwidth is 1.9 MHz at G = 1, 350 kHz at G = 10, 60 kHz at G = 100, and 6 kHz at G = 1000. The amplifier also specifies CMRR up to 149 dB typical at G ≥ 100 and PSRR up to 148 dB typical at higher gains.

Package options are 8-pin SOIC and 8-pin VSSOP. The top-view pinout assigns RG to pins 1 and 8, inputs to pins 2 and 3, supplies to pins 4 and 7, REF to pin 5, and OUT to pin 6. Applications include precision sensor signal conditioning, low-level differential measurements, and reference-shifted output stages.

Key Features

  • 2.7 V to 36 V single-supply operating range
  • ±1.35 V to ±18 V dual-supply operating range
  • -40°C to +125°C specified operating temperature range
  • ±60 V input overvoltage protection across temperature
  • Gain set by external RG resistor
  • 1 V/V to 10000 V/V programmable gain range
  • 12 GΩ || 8.5 pF input impedance
  • CMRR up to 149 dB typical at G ≥ 100
  • PSRR up to 148 dB typical at higher gains
  • 1.9 MHz bandwidth at gain of 1
  • 0.9 V/µs slew rate at gain of 1
  • 180 µA typical quiescent current at 25°C

Typical Applications

  • Low-level differential signal conditioning
  • Precision sensor interface circuits
  • Bridge measurement gain stages
  • Reference-shifted output signal chains
  • High common-mode rejection measurements
  • Low-power instrumentation circuits
  • Overvoltage-tolerant input measurement nodes

Procurement Notes

When requesting a quote for INA823, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For analog and signal-chain sourcing, supply voltage, bandwidth, accuracy, noise level, package, temperature grade, input/output configuration and qualification requirements should be verified before approval.

FAQ

What supply ranges does the INA823 support?

The INA823 supports 2.7 V to 36 V single-supply operation and ±1.35 V to ±18 V dual-supply operation. The recommended operating temperature range is -40°C to +125°C.

How is gain configured on the INA823?

Gain is set with an external resistor between the RG pins. The datasheet equation is G = 1 + (100 kΩ / RG), and the supported gain range is 1 V/V to 10000 V/V.

What package options are listed for INA823?

The listed package options are 8-pin SOIC (D), 4.90 mm x 3.91 mm, and 8-pin VSSOP (DGK), 3.00 mm x 3.00 mm. Both use the same top-view pin assignment.

What input protection is specified for INA823?

The input pins are specified with ±60 V input overvoltage protection over TA = -40°C to +125°C. The absolute maximum IN pin range is (–VS) - 60 V to (+VS) + 60 V.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 8, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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