Specifications
| Type | Description |
|---|---|
| Part Number | IRF510 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package Case | TO-220AB |
| Component Type | Other |
| Drain-Source Voltage | 100 V |
| Drain-Source On-State Resistance | 0.54 ohm max |
| Total Gate Charge | 8.3 nC max |
| Gate-Source Charge | 2.3 nC max |
| Gate-Drain Charge | 3.8 nC max |
| Configuration | Single |
| Package | TO-220AB |
| Lead-Free Ordering Part Number | IRF510PbF |
| Lead-Free and Halogen-Free Ordering Part Number | IRF510PbF-BE3 |
| Drain-Source Voltage Absolute Maximum | 100 V |
| Gate-Source Voltage Absolute Maximum | +/-20 V |
| Continuous Drain Current | 5.6 A |
| Continuous Drain Current | 4.0 A |
| Pulsed Drain Current | 20 A |
| Linear Derating Factor | 0.29 W/°C |
| Single Pulse Avalanche Energy | 75 mJ |
| Repetitive Avalanche Current | 5.6 A |
| Repetitive Avalanche Energy | 4.3 mJ |
| Maximum Power Dissipation | 43 W |
| Peak Diode Recovery dV/dt | 5.5 V/ns |
| Operating Junction Temperature Range | -55 to +175°C |
| Storage Temperature Range | -55 to +175°C |
| Soldering Peak Temperature | 300°C |
| Mounting Torque | 10 lbf-in; 1.1 N·m |
| Maximum Junction-to-Ambient Thermal Resistance | 62°C/W max |
| Case-to-Sink Thermal Resistance | 0.50°C/W typ |
| Maximum Junction-to-Case Thermal Resistance | 3.5°C/W max |
| Drain-Source Breakdown Voltage | 100 V min |
| Drain-Source Breakdown Voltage Temperature Coefficient | 0.12 V/°C typ |
| Gate-Source Threshold Voltage | 2.0 V min, 4.0 V max |
| Gate-Source Leakage | +/-100 nA max |
| Zero Gate Voltage Drain Current | 25 uA max |
| Zero Gate Voltage Drain Current | 250 uA max |
| Drain-Source On-State Resistance | 0.54 ohm max |
| Forward Transconductance | 1.3 S min |
| Input Capacitance | 180 pF typ |
| Output Capacitance | 81 pF typ |
| Reverse Transfer Capacitance | 15 pF typ |
| Total Gate Charge | 8.3 nC max |
| Gate-Source Charge | 2.3 nC max |
| Gate-Drain Charge | 3.8 nC max |
| Turn-On Delay Time | 6.9 ns typ |
| Rise Time | 11 ns typ |
| Turn-Off Delay Time | 56 ns typ |
| Fall Time | 9.4 ns typ |
| Gate Input Resistance | 2.5 ohm min, 11.6 ohm max |
| Internal Drain Inductance | 4.5 nH typ |
| Internal Source Inductance | 7.5 nH typ |
| Continuous Source-Drain Diode Current | 5.6 A max |
| Pulsed Diode Forward Current | 20 A max |
| Body Diode Voltage | 2.5 V max |
| Body Diode Reverse Recovery Time | 100 ns typ, 200 ns max |
| Body Diode Reverse Recovery Charge | 0.44 uC typ, 0.88 uC max |
| Forward Turn-On Time | Intrinsic turn-on time is negligible |
| Datasheet Status | request_only |
Product Overview
Current and power limits include 5.6 A continuous drain current at TC=25°C, 4.0 A at TC=100°C, 20 A pulsed drain current, and 43 W maximum power dissipation at TC=25°C. The absolute maximum gate-source voltage is ±20 V, with junction and storage temperature ranges from -55 to +175°C.
Key Features
- 100 V drain-source voltage rating
- 0.54 ohm maximum RDS(on) at VGS=10 V
- 8.3 nC maximum total gate charge
- 5.6 A continuous drain current at TC=25°C
- 20 A pulsed drain current rating
- 43 W maximum power dissipation at TC=25°C
- TO-220AB package with 10 lbf-in mounting torque
- -55 to +175°C operating junction temperature range
- 100 ns typical body diode reverse recovery time
- Single N-channel MOSFET configuration
Typical Applications
- 100 V MOSFET switching stages
- TO-220AB power assemblies
- Gate-driven power management circuits
- Avalanche-rated switching circuits
- Body-diode conduction paths
- Thermally managed drain switching
- Pulsed current switching designs
Procurement Notes
When requesting a quote for IRF510, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What package is used for the Vishay IRF510?
The IRF510 is specified in a TO-220AB package. The extracted ordering information lists TO-220AB as the package, with IRF510PbF and IRF510PbF-BE3 given as ordering part numbers.
What are the main voltage and current ratings?
The IRF510 has a 100 V drain-source voltage rating and a ±20 V gate-source absolute maximum rating. Continuous drain current is 5.6 A at TC=25°C and 4.0 A at TC=100°C with VGS=10 V.
What gate charge values are specified for IRF510?
The datasheet facts list 8.3 nC maximum total gate charge, 2.3 nC maximum gate-source charge, and 3.8 nC maximum gate-drain charge. The detailed test condition is ID=5.6 A, VDS=80 V, and VGS=10 V.
What thermal limits should be considered?
Thermal data includes 62°C/W maximum junction-to-ambient resistance, 3.5°C/W maximum junction-to-case resistance, and 0.50°C/W typical case-to-sink resistance on a flat, greased surface. Maximum power dissipation is 43 W at TC=25°C.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.