Specifications
| Type | Description |
|---|---|
| Part Number | IRF520 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-220AB |
| Component Type | Power_IC |
| Drain-source voltage | 100 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Gate-source voltage | ±20 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Continuous drain current | 9.2 A; VGS=10 V, TC=25°C |
| Continuous drain current | 6.5 A; VGS=10 V, TC=100°C |
| Pulsed drain current | 37 A; repetitive rating, pulse width limited by maximum junction temperature |
| Linear derating factor | 0.40 W/°C; absolute maximum rating |
| Single pulse avalanche energy | 200 mJ; VDD=25 V, starting TJ=25°C, L=3.5 mH, Rg=25 Ω, IAS=9.2 A |
| Repetitive avalanche current | 9.2 A; repetitive rating, pulse width limited by maximum junction temperature |
| Repetitive avalanche energy | 6.0 mJ; repetitive rating, pulse width limited by maximum junction temperature |
| Maximum power dissipation | 60 W; TC=25°C |
| Peak diode recovery dV/dt | 5.5 V/ns; ISD≤9.2 A, dI/dt≤110 A/µs, VDD≤VDS, TJ≤175°C |
| Operating junction temperature range | -55 to +175 °C; absolute maximum rating |
| Storage temperature range | -55 to +175 °C; absolute maximum rating |
| Soldering peak temperature | 300 °C; for 10 s, 1.6 mm from case |
| Mounting torque | 10 lbf·in; 1.1 N·m; 6-32 or M3 screw |
| Maximum junction-to-ambient thermal resistance | Max 62 °C/W; thermal resistance rating |
| Case-to-sink thermal resistance | Typ 0.50 °C/W; flat, greased surface |
| Maximum junction-to-case thermal resistance | Max 2.5 °C/W; drain |
| Drain-source breakdown voltage | Min 100 V; VGS=0 V, ID=250 µA, TJ=25°C |
| Drain-source breakdown voltage temperature coefficient | Typ 0.13 V/°C; referenced to 25°C, ID=1 mA |
| Gate-source threshold voltage | Min 2.0 V, Max 4.0 V; VDS=VGS, ID=250 µA, TJ=25°C |
| Gate-source leakage | Max ±100 nA; VGS=±20 V, TJ=25°C |
| Zero gate voltage drain current | Max 25 µA; VDS=100 V, VGS=0 V, TJ=25°C |
| Zero gate voltage drain current | Max 250 µA; VDS=80 V, VGS=0 V, TJ=150°C |
| Drain-source on-state resistance | Max 0.27 Ω; VGS=10 V, ID=5.5 A, pulse width≤300 µs, duty cycle≤2% |
| Forward transconductance | Min 2.7 S; VDS=50 V, ID=5.5 A, pulse width≤300 µs, duty cycle≤2% |
| Input capacitance | Typ 360 pF; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Output capacitance | Typ 150 pF; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Reverse transfer capacitance | Typ 34 pF; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Total gate charge | Max 16 nC; ID=9.2 A, VDS=80 V, VGS=10 V |
| Gate-source charge | Max 4.4 nC; ID=9.2 A, VDS=80 V, VGS=10 V |
| Gate-drain charge | Max 7.7 nC; ID=9.2 A, VDS=80 V, VGS=10 V |
| Turn-on delay time | Typ 8.8 ns; VDD=50 V, ID=9.2 A, Rg=18 Ω, RD=5.2 Ω |
| Rise time | Typ 30 ns; VDD=50 V, ID=9.2 A, Rg=18 Ω, RD=5.2 Ω |
| Turn-off delay time | Typ 19 ns; VDD=50 V, ID=9.2 A, Rg=18 Ω, RD=5.2 Ω |
| Fall time | Typ 20 ns; VDD=50 V, ID=9.2 A, Rg=18 Ω, RD=5.2 Ω |
| Gate input resistance | Min 1.0 Ω, Max 5.0 Ω; f=1 MHz, open drain |
| Internal drain inductance | Typ 4.5 nH; between lead, 6 mm (0.25 in) from package and center of die contact |
| Internal source inductance | Typ 7.5 nH; between lead, 6 mm (0.25 in) from package and center of die contact |
| Continuous source-drain diode current | Max 9.2 A; MOSFET body diode characteristic |
| Pulsed diode forward current | Max 37 A; repetitive rating, pulse width limited by maximum junction temperature |
| Body diode voltage | Max 1.8 V; TJ=25°C, IS=9.2 A, VGS=0 V, pulse width≤300 µs, duty cycle≤2% |
| Body diode reverse recovery time | Typ 110 ns, Max 260 ns; TJ=25°C, IF=9.2 A, dI/dt=100 A/µs |
| Body diode reverse recovery charge | Typ 0.53 µC, Max 1.3 µC; TJ=25°C, IF=9.2 A, dI/dt=100 A/µs |
| Forward turn-on time | Intrinsic turn-on time is negligible; turn-on dominated by LS and LD |
| Configuration | Single; product summary |
| Ordering part number | IRF520PbF; lead (Pb)-free option |
| Ordering part number | IRF520PbF-BE3; lead (Pb)-free and halogen-free option |
| Datasheet Status | request_only |
Product Overview
The Vishay IRF520 is a single N-channel power MOSFET categorized for Power_Management use and packaged in TO-220AB. Its absolute maximum ratings define a 100 V drain-source voltage, ±20 V gate-source voltage, and 60 W maximum power dissipation at TC=25°C. Continuous drain current is specified as 9.2 A at TC=25°C and 6.5 A at TC=100°C with VGS=10 V, while pulsed drain current is rated at 37 A under repetitive pulse conditions limited by maximum junction temperature.
Key electrical limits include a minimum 100 V drain-source breakdown voltage at VGS=0 V and ID=250 µA, gate-source threshold voltage from 2.0 V to 4.0 V, and maximum 0.27 Ω drain-source on-state resistance at VGS=10 V and ID=5.5 A. Dynamic data includes 360 pF typical input capacitance, 16 nC maximum total gate charge, and typical switching timings of 8.8 ns turn-on delay, 30 ns rise time, 19 ns turn-off delay, and 20 ns fall time.
Thermal and assembly data include maximum 2.5°C/W junction-to-case thermal resistance, maximum 62°C/W junction-to-ambient thermal resistance, 300°C soldering peak temperature for 10 s at 1.6 mm from the case, and 10 lbf·in or 1.1 N·m mounting torque with a 6-32 or M3 screw.
Key Features
- 100 V drain-source voltage absolute maximum rating
- ±20 V gate-source voltage absolute maximum rating
- 9.2 A continuous drain current at TC=25°C
- 37 A pulsed drain current repetitive rating
- 60 W maximum power dissipation at TC=25°C
- Max 0.27 Ω drain-source on-state resistance
- Max 16 nC total gate charge
- Typ 360 pF input capacitance at 1 MHz
- -55 to +175°C operating junction temperature range
- TO-220AB package with 1.1 N·m mounting torque
Typical Applications
- Power switching circuits
- MOSFET gate-driven loads
- Pulsed drain current circuits
- Avalanche-rated switching stages
- Body diode conduction paths
- TO-220AB mounted power assemblies
- High-temperature power designs
Procurement Notes
When requesting a quote for IRF520, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What package is used for the Vishay IRF520?
The IRF520 is specified in a TO-220AB package. Assembly-related datasheet facts include a 300°C soldering peak temperature for 10 seconds at 1.6 mm from the case and 10 lbf·in or 1.1 N·m mounting torque.
What are the main voltage and current ratings of IRF520?
The IRF520 has a 100 V drain-source voltage rating and ±20 V gate-source voltage rating. Continuous drain current is 9.2 A at TC=25°C and 6.5 A at TC=100°C with VGS=10 V.
What is the specified on-state resistance for IRF520?
Drain-source on-state resistance is specified as maximum 0.27 Ω under pulsed test conditions with VGS=10 V, ID=5.5 A, pulse width not exceeding 300 µs, and duty cycle not exceeding 2%.
What body diode data is listed for IRF520?
The MOSFET body diode is rated for maximum 9.2 A continuous source-drain current and 37 A pulsed diode forward current. Body diode voltage is maximum 1.8 V at TJ=25°C, IS=9.2 A, and VGS=0 V.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.