IRF520 N-channel Power MOSFET

Vishay Power_Management — specifications, applications, sourcing support and RFQ.

IRF520 N-channel Power MOSFET

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Part Number
IRF520
Manufacturer
Vishay
Package
TO-220AB
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

IRF520 from Vishay is a single N-channel power MOSFET in the Power_Management category, supplied in a TO-220AB package. Datasheet parameters include 100 V drain-source voltage, ±20 V gate-source voltage, 9.2 A continuous drain current at TC=25°C, and 6.5 A at TC=100°C. The device is rated for 37 A pulsed drain current, 60 W maximum power dissipation at TC=25°C, and -55 to +175°C operating junction temperature. Electrical characteristics include maximum 0.27 Ω drain-source on-state resistance, 16 nC maximum total gate charge, and typical switching times from 8.8 ns turn-on delay to 20 ns fall time.

Specifications

TypeDescription
Part NumberIRF520
ManufacturerVishay
Product TypeLDO Regulator
CategoryPower Management
Package / CaseTO-220AB
Component TypePower_IC
Drain-source voltage100 V; absolute maximum rating, TC=25°C unless otherwise noted
Gate-source voltage±20 V; absolute maximum rating, TC=25°C unless otherwise noted
Continuous drain current9.2 A; VGS=10 V, TC=25°C
Continuous drain current6.5 A; VGS=10 V, TC=100°C
Pulsed drain current37 A; repetitive rating, pulse width limited by maximum junction temperature
Linear derating factor0.40 W/°C; absolute maximum rating
Single pulse avalanche energy200 mJ; VDD=25 V, starting TJ=25°C, L=3.5 mH, Rg=25 Ω, IAS=9.2 A
Repetitive avalanche current9.2 A; repetitive rating, pulse width limited by maximum junction temperature
Repetitive avalanche energy6.0 mJ; repetitive rating, pulse width limited by maximum junction temperature
Maximum power dissipation60 W; TC=25°C
Peak diode recovery dV/dt5.5 V/ns; ISD≤9.2 A, dI/dt≤110 A/µs, VDD≤VDS, TJ≤175°C
Operating junction temperature range-55 to +175 °C; absolute maximum rating
Storage temperature range-55 to +175 °C; absolute maximum rating
Soldering peak temperature300 °C; for 10 s, 1.6 mm from case
Mounting torque10 lbf·in; 1.1 N·m; 6-32 or M3 screw
Maximum junction-to-ambient thermal resistanceMax 62 °C/W; thermal resistance rating
Case-to-sink thermal resistanceTyp 0.50 °C/W; flat, greased surface
Maximum junction-to-case thermal resistanceMax 2.5 °C/W; drain
Drain-source breakdown voltageMin 100 V; VGS=0 V, ID=250 µA, TJ=25°C
Drain-source breakdown voltage temperature coefficientTyp 0.13 V/°C; referenced to 25°C, ID=1 mA
Gate-source threshold voltageMin 2.0 V, Max 4.0 V; VDS=VGS, ID=250 µA, TJ=25°C
Gate-source leakageMax ±100 nA; VGS=±20 V, TJ=25°C
Zero gate voltage drain currentMax 25 µA; VDS=100 V, VGS=0 V, TJ=25°C
Zero gate voltage drain currentMax 250 µA; VDS=80 V, VGS=0 V, TJ=150°C
Drain-source on-state resistanceMax 0.27 Ω; VGS=10 V, ID=5.5 A, pulse width≤300 µs, duty cycle≤2%
Forward transconductanceMin 2.7 S; VDS=50 V, ID=5.5 A, pulse width≤300 µs, duty cycle≤2%
Input capacitanceTyp 360 pF; VGS=0 V, VDS=25 V, f=1.0 MHz
Output capacitanceTyp 150 pF; VGS=0 V, VDS=25 V, f=1.0 MHz
Reverse transfer capacitanceTyp 34 pF; VGS=0 V, VDS=25 V, f=1.0 MHz
Total gate chargeMax 16 nC; ID=9.2 A, VDS=80 V, VGS=10 V
Gate-source chargeMax 4.4 nC; ID=9.2 A, VDS=80 V, VGS=10 V
Gate-drain chargeMax 7.7 nC; ID=9.2 A, VDS=80 V, VGS=10 V
Turn-on delay timeTyp 8.8 ns; VDD=50 V, ID=9.2 A, Rg=18 Ω, RD=5.2 Ω
Rise timeTyp 30 ns; VDD=50 V, ID=9.2 A, Rg=18 Ω, RD=5.2 Ω
Turn-off delay timeTyp 19 ns; VDD=50 V, ID=9.2 A, Rg=18 Ω, RD=5.2 Ω
Fall timeTyp 20 ns; VDD=50 V, ID=9.2 A, Rg=18 Ω, RD=5.2 Ω
Gate input resistanceMin 1.0 Ω, Max 5.0 Ω; f=1 MHz, open drain
Internal drain inductanceTyp 4.5 nH; between lead, 6 mm (0.25 in) from package and center of die contact
Internal source inductanceTyp 7.5 nH; between lead, 6 mm (0.25 in) from package and center of die contact
Continuous source-drain diode currentMax 9.2 A; MOSFET body diode characteristic
Pulsed diode forward currentMax 37 A; repetitive rating, pulse width limited by maximum junction temperature
Body diode voltageMax 1.8 V; TJ=25°C, IS=9.2 A, VGS=0 V, pulse width≤300 µs, duty cycle≤2%
Body diode reverse recovery timeTyp 110 ns, Max 260 ns; TJ=25°C, IF=9.2 A, dI/dt=100 A/µs
Body diode reverse recovery chargeTyp 0.53 µC, Max 1.3 µC; TJ=25°C, IF=9.2 A, dI/dt=100 A/µs
Forward turn-on timeIntrinsic turn-on time is negligible; turn-on dominated by LS and LD
ConfigurationSingle; product summary
Ordering part numberIRF520PbF; lead (Pb)-free option
Ordering part numberIRF520PbF-BE3; lead (Pb)-free and halogen-free option
Datasheet Statusrequest_only

Product Overview

The Vishay IRF520 is a single N-channel power MOSFET categorized for Power_Management use and packaged in TO-220AB. Its absolute maximum ratings define a 100 V drain-source voltage, ±20 V gate-source voltage, and 60 W maximum power dissipation at TC=25°C. Continuous drain current is specified as 9.2 A at TC=25°C and 6.5 A at TC=100°C with VGS=10 V, while pulsed drain current is rated at 37 A under repetitive pulse conditions limited by maximum junction temperature.

Key electrical limits include a minimum 100 V drain-source breakdown voltage at VGS=0 V and ID=250 µA, gate-source threshold voltage from 2.0 V to 4.0 V, and maximum 0.27 Ω drain-source on-state resistance at VGS=10 V and ID=5.5 A. Dynamic data includes 360 pF typical input capacitance, 16 nC maximum total gate charge, and typical switching timings of 8.8 ns turn-on delay, 30 ns rise time, 19 ns turn-off delay, and 20 ns fall time.

Thermal and assembly data include maximum 2.5°C/W junction-to-case thermal resistance, maximum 62°C/W junction-to-ambient thermal resistance, 300°C soldering peak temperature for 10 s at 1.6 mm from the case, and 10 lbf·in or 1.1 N·m mounting torque with a 6-32 or M3 screw.

Key Features

  • 100 V drain-source voltage absolute maximum rating
  • ±20 V gate-source voltage absolute maximum rating
  • 9.2 A continuous drain current at TC=25°C
  • 37 A pulsed drain current repetitive rating
  • 60 W maximum power dissipation at TC=25°C
  • Max 0.27 Ω drain-source on-state resistance
  • Max 16 nC total gate charge
  • Typ 360 pF input capacitance at 1 MHz
  • -55 to +175°C operating junction temperature range
  • TO-220AB package with 1.1 N·m mounting torque

Typical Applications

  • Power switching circuits
  • MOSFET gate-driven loads
  • Pulsed drain current circuits
  • Avalanche-rated switching stages
  • Body diode conduction paths
  • TO-220AB mounted power assemblies
  • High-temperature power designs

Procurement Notes

When requesting a quote for IRF520, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What package is used for the Vishay IRF520?

The IRF520 is specified in a TO-220AB package. Assembly-related datasheet facts include a 300°C soldering peak temperature for 10 seconds at 1.6 mm from the case and 10 lbf·in or 1.1 N·m mounting torque.

What are the main voltage and current ratings of IRF520?

The IRF520 has a 100 V drain-source voltage rating and ±20 V gate-source voltage rating. Continuous drain current is 9.2 A at TC=25°C and 6.5 A at TC=100°C with VGS=10 V.

What is the specified on-state resistance for IRF520?

Drain-source on-state resistance is specified as maximum 0.27 Ω under pulsed test conditions with VGS=10 V, ID=5.5 A, pulse width not exceeding 300 µs, and duty cycle not exceeding 2%.

What body diode data is listed for IRF520?

The MOSFET body diode is rated for maximum 9.2 A continuous source-drain current and 37 A pulsed diode forward current. Body diode voltage is maximum 1.8 V at TJ=25°C, IS=9.2 A, and VGS=0 V.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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