Specifications
| Type | Description |
|---|---|
| Part Number | IRF530 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Drain-source voltage | 100 V |
| Drain-source on-resistance | 0.16 ohm max |
| Total gate charge | 26 nC max |
| Gate-source charge | 5.5 nC max |
| Gate-drain charge | 11 nC max |
| Configuration | Single |
| Package | TO-220AB |
| Lead-free ordering part number | IRF530PbF |
| Lead-free and halogen-free ordering part number | IRF530PbF-BE3 |
| Drain-source voltage absolute maximum | 100 V |
| Gate-source voltage absolute maximum | +/-20 V |
| Continuous drain current | 14 A |
| Continuous drain current | 10 A |
| Pulsed drain current | 56 A |
| Linear derating factor | 0.59 W/degC |
| Single pulse avalanche energy | 69 mJ |
| Repetitive avalanche current | 14 A |
| Repetitive avalanche energy | 8.8 mJ |
| Maximum power dissipation | 88 W |
| Peak diode recovery dV/dt | 5.5 V/ns |
| Operating junction and storage temperature range | -55 to +175 degC |
| Soldering recommendation peak temperature | 300 degC |
| Mounting torque | 10 lbf in; 1.1 N m |
| Maximum junction-to-ambient thermal resistance | 62 degC/W max |
| Case-to-sink thermal resistance | 0.50 degC/W typ |
| Maximum junction-to-case thermal resistance | 1.7 degC/W max |
| Drain-source breakdown voltage | 100 V min |
| Drain-source breakdown voltage temperature coefficient | 0.12 V/degC typ |
| Gate-source threshold voltage | 2.0 V min, 4.0 V max |
| Gate-source leakage | +/-100 nA max |
| Zero gate voltage drain current | 25 uA max |
| Zero gate voltage drain current at high temperature | 250 uA max |
| Drain-source on-state resistance | 0.16 ohm max |
| Forward transconductance | 5.1 S min |
| Input capacitance | 670 pF typ |
| Output capacitance | 250 pF typ |
| Reverse transfer capacitance | 60 pF typ |
| Total gate charge | 26 nC max |
| Gate-source charge | 5.5 nC max |
| Gate-drain charge | 11 nC max |
| Turn-on delay time | 10 ns typ |
| Rise time | 23 ns typ |
| Turn-off delay time | 34 ns typ |
| Fall time | 24 ns typ |
| Gate input resistance | 1.0 ohm min, 4.7 ohm max |
| Internal drain inductance | 4.5 nH typ |
| Internal source inductance | 7.5 nH typ |
| Continuous source-drain diode current | 14 A max |
| Pulsed diode forward current | 56 A max |
| Body diode voltage | 2.5 V max |
| Body diode reverse recovery time | 150 ns typ, 280 ns max |
| Body diode reverse recovery charge | 0.85 uC typ, 1.7 uC max |
| Forward turn-on time | Intrinsic turn-on time is negligible |
| Operating temperature feature | 175 degC |
| Datasheet Status | request_only |
Product Overview
The Vishay IRF530 is a single N-channel power MOSFET supplied in a TO-220AB package. Key electrical limits include 100 V drain-source voltage, +/-20 V gate-source voltage, and 14 A continuous drain current at TC=25 degC with VGS=10 V. At TC=100 degC, the continuous drain current rating is 10 A, while the repetitive pulsed drain current rating is 56 A when limited by maximum junction temperature.
Conduction performance is specified with 0.16 ohm maximum drain-source on-state resistance at VGS=10 V and ID=8.4 A. Gate-drive and switching data include 26 nC maximum total gate charge, 10 ns typical turn-on delay, 23 ns typical rise time, 34 ns typical turn-off delay, and 24 ns typical fall time under the stated pulsed test conditions.
Thermal and assembly data include 88 W maximum power dissipation at TC=25 degC, 1.7 degC/W maximum junction-to-case thermal resistance, 62 degC/W maximum junction-to-ambient thermal resistance, and 0.50 degC/W typical case-to-sink resistance on a flat greased surface. The device has a 300 degC soldering recommendation for 10 s at 1.6 mm from the case and 10 lbf in; 1.1 N m mounting torque for a 6-32 or M3 screw.
Key Features
- Single N-channel power MOSFET configuration
- 100 V drain-source voltage rating
- 0.16 ohm maximum on-resistance at VGS=10 V
- 26 nC maximum total gate charge
- 14 A continuous drain current at TC=25 degC
- 56 A repetitive pulsed drain current rating
- 88 W maximum power dissipation at TC=25 degC
- -55 to +175 degC junction and storage range
- TO-220AB package with specified mounting torque
- Integral source-drain diode rated to 14 A continuous
Typical Applications
- Power switching circuits
- Load switching stages
- Motor-drive power stages
- DC converter switching
- Solenoid and relay drivers
- Body-diode recovery circuits
- TO-220 heat-sinked assemblies
Procurement Notes
When requesting a quote for IRF530, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the Vishay IRF530?
The IRF530 is a Vishay single N-channel power MOSFET in the Power_Management category. It is supplied in a TO-220AB package and has a 100 V drain-source voltage rating.
What current rating applies to IRF530 at case temperature?
With VGS=10 V, the continuous drain current is 14 A at TC=25 degC and 10 A at TC=100 degC. The repetitive pulsed drain current rating is 56 A when limited by maximum junction temperature.
What gate-drive values are specified for IRF530?
The IRF530 has a +/-20 V absolute maximum gate-source voltage. Gate charge values include 26 nC maximum total gate charge, 5.5 nC maximum gate-source charge, and 11 nC maximum gate-drain charge.
What thermal limits are listed for the IRF530 package?
Thermal data includes 1.7 degC/W maximum junction-to-case resistance, 62 degC/W maximum junction-to-ambient resistance, and 0.50 degC/W typical case-to-sink resistance on a flat, greased surface.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.