IRF530 N-channel Power MOSFET

Vishay Power_Management — specifications, applications, sourcing support and RFQ.

IRF530 N-channel Power MOSFET

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
IRF530
Manufacturer
Vishay
Package
TO-220AB
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

IRF530 from Vishay is an N-channel power MOSFET in a TO-220AB package for Power_Management designs. It is specified for 100 V drain-source voltage, 14 A continuous drain current at TC=25 degC with VGS=10 V, and 0.16 ohm maximum drain-source on-resistance at VGS=10 V. Switching and gate-drive parameters include 26 nC maximum total gate charge, 5.5 nC maximum gate-source charge, and 11 nC maximum gate-drain charge. The device supports operation from -55 to +175 degC and includes an integral source-drain diode rated for 14 A continuous current, making it applicable to power switching, load control, motor-drive, converter, and diode-recovery-aware designs.

Specifications

TypeDescription
Part NumberIRF530
ManufacturerVishay
Product TypeLDO Regulator
CategoryPower Management
Drain-source voltage100 V
Drain-source on-resistance0.16 ohm max
Total gate charge26 nC max
Gate-source charge5.5 nC max
Gate-drain charge11 nC max
ConfigurationSingle
PackageTO-220AB
Lead-free ordering part numberIRF530PbF
Lead-free and halogen-free ordering part numberIRF530PbF-BE3
Drain-source voltage absolute maximum100 V
Gate-source voltage absolute maximum+/-20 V
Continuous drain current14 A
Continuous drain current10 A
Pulsed drain current56 A
Linear derating factor0.59 W/degC
Single pulse avalanche energy69 mJ
Repetitive avalanche current14 A
Repetitive avalanche energy8.8 mJ
Maximum power dissipation88 W
Peak diode recovery dV/dt5.5 V/ns
Operating junction and storage temperature range-55 to +175 degC
Soldering recommendation peak temperature300 degC
Mounting torque10 lbf in; 1.1 N m
Maximum junction-to-ambient thermal resistance62 degC/W max
Case-to-sink thermal resistance0.50 degC/W typ
Maximum junction-to-case thermal resistance1.7 degC/W max
Drain-source breakdown voltage100 V min
Drain-source breakdown voltage temperature coefficient0.12 V/degC typ
Gate-source threshold voltage2.0 V min, 4.0 V max
Gate-source leakage+/-100 nA max
Zero gate voltage drain current25 uA max
Zero gate voltage drain current at high temperature250 uA max
Drain-source on-state resistance0.16 ohm max
Forward transconductance5.1 S min
Input capacitance670 pF typ
Output capacitance250 pF typ
Reverse transfer capacitance60 pF typ
Total gate charge26 nC max
Gate-source charge5.5 nC max
Gate-drain charge11 nC max
Turn-on delay time10 ns typ
Rise time23 ns typ
Turn-off delay time34 ns typ
Fall time24 ns typ
Gate input resistance1.0 ohm min, 4.7 ohm max
Internal drain inductance4.5 nH typ
Internal source inductance7.5 nH typ
Continuous source-drain diode current14 A max
Pulsed diode forward current56 A max
Body diode voltage2.5 V max
Body diode reverse recovery time150 ns typ, 280 ns max
Body diode reverse recovery charge0.85 uC typ, 1.7 uC max
Forward turn-on timeIntrinsic turn-on time is negligible
Operating temperature feature175 degC
Datasheet Statusrequest_only

Product Overview

The Vishay IRF530 is a single N-channel power MOSFET supplied in a TO-220AB package. Key electrical limits include 100 V drain-source voltage, +/-20 V gate-source voltage, and 14 A continuous drain current at TC=25 degC with VGS=10 V. At TC=100 degC, the continuous drain current rating is 10 A, while the repetitive pulsed drain current rating is 56 A when limited by maximum junction temperature.

Conduction performance is specified with 0.16 ohm maximum drain-source on-state resistance at VGS=10 V and ID=8.4 A. Gate-drive and switching data include 26 nC maximum total gate charge, 10 ns typical turn-on delay, 23 ns typical rise time, 34 ns typical turn-off delay, and 24 ns typical fall time under the stated pulsed test conditions.

Thermal and assembly data include 88 W maximum power dissipation at TC=25 degC, 1.7 degC/W maximum junction-to-case thermal resistance, 62 degC/W maximum junction-to-ambient thermal resistance, and 0.50 degC/W typical case-to-sink resistance on a flat greased surface. The device has a 300 degC soldering recommendation for 10 s at 1.6 mm from the case and 10 lbf in; 1.1 N m mounting torque for a 6-32 or M3 screw.

Key Features

  • Single N-channel power MOSFET configuration
  • 100 V drain-source voltage rating
  • 0.16 ohm maximum on-resistance at VGS=10 V
  • 26 nC maximum total gate charge
  • 14 A continuous drain current at TC=25 degC
  • 56 A repetitive pulsed drain current rating
  • 88 W maximum power dissipation at TC=25 degC
  • -55 to +175 degC junction and storage range
  • TO-220AB package with specified mounting torque
  • Integral source-drain diode rated to 14 A continuous

Typical Applications

  • Power switching circuits
  • Load switching stages
  • Motor-drive power stages
  • DC converter switching
  • Solenoid and relay drivers
  • Body-diode recovery circuits
  • TO-220 heat-sinked assemblies

Procurement Notes

When requesting a quote for IRF530, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of device is the Vishay IRF530?

The IRF530 is a Vishay single N-channel power MOSFET in the Power_Management category. It is supplied in a TO-220AB package and has a 100 V drain-source voltage rating.

What current rating applies to IRF530 at case temperature?

With VGS=10 V, the continuous drain current is 14 A at TC=25 degC and 10 A at TC=100 degC. The repetitive pulsed drain current rating is 56 A when limited by maximum junction temperature.

What gate-drive values are specified for IRF530?

The IRF530 has a +/-20 V absolute maximum gate-source voltage. Gate charge values include 26 nC maximum total gate charge, 5.5 nC maximum gate-source charge, and 11 nC maximum gate-drain charge.

What thermal limits are listed for the IRF530 package?

Thermal data includes 1.7 degC/W maximum junction-to-case resistance, 62 degC/W maximum junction-to-ambient resistance, and 0.50 degC/W typical case-to-sink resistance on a flat, greased surface.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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