Specifications
| Type | Description |
|---|---|
| Part Number | IRF540 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-220AB |
| Component Type | Other |
| Drain-Source Voltage | 100 V; product summary / absolute maximum rating, TC=25°C unless otherwise noted |
| Drain-Source On-State Resistance | 0.077 Ω max; VGS=10 V, ID=17 A, TJ=25°C, pulse width <=300 µs, duty cycle <=2% |
| Total Gate Charge | 72 nC max; ID=17 A, VDS=80 V, VGS=10 V |
| Gate-Source Charge | 11 nC max; ID=17 A, VDS=80 V, VGS=10 V |
| Gate-Drain Charge | 32 nC max; ID=17 A, VDS=80 V, VGS=10 V |
| Configuration | Single; product summary |
| Gate-Source Voltage | ±20 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Continuous Drain Current | 28 A; VGS=10 V, TC=25°C |
| Continuous Drain Current | 20 A; VGS=10 V, TC=100°C |
| Pulsed Drain Current | 110 A; repetitive rating, pulse width limited by maximum junction temperature |
| Linear Derating Factor | 1.0 W/°C; absolute maximum rating |
| Single Pulse Avalanche Energy | 230 mJ; VDD=25 V, starting TJ=25°C, L=440 µH, Rg=25 Ω, IAS=28 A |
| Repetitive Avalanche Current | 28 A; repetitive rating, pulse width limited by maximum junction temperature |
| Repetitive Avalanche Energy | 15 mJ; repetitive rating, pulse width limited by maximum junction temperature |
| Maximum Power Dissipation | 150 W; TC=25°C |
| Peak Diode Recovery dV/dt | 5.5 V/ns; ISD<=28 A, dI/dt<=170 A/µs, VDD<=VDS, TJ<=175°C |
| Operating Junction Temperature Range | -55 to +175 °C; absolute maximum rating |
| Storage Temperature Range | -55 to +175 °C; absolute maximum rating |
| Soldering Peak Temperature | 300 °C; for 10 s, 1.6 mm from case |
| Mounting Torque | 10 lbf·in; 1.1 N·m; 6-32 or M3 screw |
| Maximum Junction-to-Ambient Thermal Resistance | 62 °C/W max; thermal resistance rating |
| Case-to-Sink Thermal Resistance | 0.50 °C/W typ; flat, greased surface |
| Maximum Junction-to-Case Thermal Resistance | 1.0 °C/W max; junction-to-case, drain |
| Drain-Source Breakdown Voltage | 100 V min; VGS=0 V, ID=250 µA |
| Drain-Source Breakdown Voltage Temperature Coefficient | 0.13 V/°C typ; reference to 25°C, ID=1 mA |
| Gate-Source Threshold Voltage | 2.0 V min, 4.0 V max; VDS=VGS, ID=250 µA |
| Gate-Source Leakage | ±100 nA max; VGS=±20 V |
| Zero Gate Voltage Drain Current | 25 µA max; VDS=100 V, VGS=0 V |
| Zero Gate Voltage Drain Current | 250 µA max; VDS=80 V, VGS=0 V, TJ=150°C |
| Forward Transconductance | 8.7 S min; VDS=50 V, ID=17 A, pulse width <=300 µs, duty cycle <=2% |
| Input Capacitance | 1700 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Output Capacitance | 560 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Reverse Transfer Capacitance | 120 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Turn-On Delay Time | 11 ns typ; VDD=50 V, ID=17 A, Rg=9.1 Ω, RD=2.9 Ω |
| Rise Time | 44 ns typ; VDD=50 V, ID=17 A, Rg=9.1 Ω, RD=2.9 Ω |
| Turn-Off Delay Time | 43 ns typ; VDD=50 V, ID=17 A, Rg=9.1 Ω, RD=2.9 Ω |
| Fall Time | 43 ns typ; VDD=50 V, ID=17 A, Rg=9.1 Ω, RD=2.9 Ω |
| Gate Input Resistance | 0.5 Ω min, 3.6 Ω max; f=1 MHz, open drain |
| Internal Drain Inductance | 4.5 nH typ; between lead 6 mm from package and center of die contact |
| Internal Source Inductance | 7.5 nH typ; between lead 6 mm from package and center of die contact |
| Continuous Source-Drain Diode Current | 28 A max; MOSFET body diode characteristic |
| Pulsed Diode Forward Current | 110 A max; repetitive rating, pulse width limited by maximum junction temperature |
| Body Diode Voltage | 2.5 V max; TJ=25°C, IS=28 A, VGS=0 V, pulse width <=300 µs, duty cycle <=2% |
| Body Diode Reverse Recovery Time | 180 ns typ, 360 ns max; TJ=25°C, IF=17 A, dI/dt=100 A/µs |
| Body Diode Reverse Recovery Charge | 1.3 µC typ, 2.8 µC max; TJ=25°C, IF=17 A, dI/dt=100 A/µs |
| Forward Turn-On Time | Intrinsic turn-on time is negligible; turn-on dominated by LS and LD |
| Lead-Free Ordering Part Number | IRF540PbF; ordering information |
| Lead-Free and Halogen-Free Ordering Part Number | IRF540PbF-BE3; ordering information |
| Datasheet Status | request_only |
Product Overview
The IRF540 is a Vishay single N-channel power MOSFET categorized for Power_Management use. It uses a TO-220AB package and carries a 100 V drain-source voltage rating, with drain-source breakdown specified at 100 V minimum when VGS=0 V and ID=250 µA. Gate-source voltage is rated at ±20 V, and threshold voltage is specified from 2.0 V minimum to 4.0 V maximum at VDS=VGS and ID=250 µA.
For conduction and drive evaluation, the device specifies 0.077 Ω maximum drain-source on-state resistance at VGS=10 V and ID=17 A. Continuous drain current is rated at 28 A with TC=25°C and 20 A with TC=100°C, while pulsed drain current is 110 A. Gate charge values include 72 nC maximum total gate charge, 11 nC maximum gate-source charge, and 32 nC maximum gate-drain charge at ID=17 A, VDS=80 V, and VGS=10 V.
Thermal and assembly data include 150 W maximum power dissipation at TC=25°C, 1.0 W/°C linear derating, -55 to +175°C operating junction and storage ranges, and a 300°C soldering peak temperature for 10 seconds at 1.6 mm from the case. Mounting torque is specified as 10 lbf·in or 1.1 N·m using a 6-32 or M3 screw.
Key Features
- Single N-channel power MOSFET configuration
- 100 V drain-source voltage rating
- 0.077 Ω maximum RDS(on) at VGS=10 V
- 28 A continuous drain current at TC=25°C
- 110 A repetitive pulsed drain current rating
- 72 nC maximum total gate charge
- 150 W maximum power dissipation at TC=25°C
- -55 to +175°C junction temperature range
- TO-220AB package with specified mounting torque
- Body diode reverse recovery specified to 360 ns maximum
Typical Applications
- 100 V power switching stages
- Gate-driven MOSFET power control
- TO-220AB through-hole power designs
- Avalanche-rated switching circuits
- Body-diode commutation paths
- Thermally managed power assemblies
Procurement Notes
When requesting a quote for IRF540, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the IRF540?
The IRF540 is a Vishay single N-channel power MOSFET in the Power_Management category. The extracted datasheet facts identify the package as TO-220AB and list electrical, thermal, avalanche, switching, and body diode characteristics.
What voltage and current ratings define the IRF540?
The IRF540 has a 100 V drain-source voltage rating and 100 V minimum drain-source breakdown voltage. Continuous drain current is rated at 28 A with TC=25°C and 20 A with TC=100°C, both at VGS=10 V.
What gate-drive conditions are used for key IRF540 specifications?
On-state resistance is specified at VGS=10 V and ID=17 A, with a 0.077 Ω maximum value. Gate charge values are specified at ID=17 A, VDS=80 V, and VGS=10 V.
What thermal limits should be checked for the IRF540?
Thermal facts include 150 W maximum power dissipation at TC=25°C, 1.0 °C/W maximum junction-to-case thermal resistance, 62 °C/W maximum junction-to-ambient resistance, and a -55 to +175°C operating junction temperature range.
Which ordering part numbers are listed for IRF540 variants?
The extracted ordering information lists IRF540PbF as the lead-free ordering part number and IRF540PbF-BE3 as the lead-free and halogen-free ordering part number.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.