Specifications
| Type | Description |
|---|---|
| Part Number | IRF620 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-220AB |
| Component Type | Power_IC |
| Drain-Source Voltage | 200 V; absolute maximum rating, TC=25°C |
| Gate-Source Voltage | ±20 V; absolute maximum rating, TC=25°C |
| Continuous Drain Current | 5.2 A; VGS=10 V, TC=25°C |
| Continuous Drain Current | 3.3 A; VGS=10 V, TC=100°C |
| Pulsed Drain Current | 18 A; pulse width limited by maximum junction temperature |
| Linear Derating Factor | 0.40 W/°C; TC above 25°C |
| Single Pulse Avalanche Energy | 110 mJ; VDD=50 V, starting TJ=25°C, L=6.1 mH, Rg=25 Ω, IAS=5.2 A |
| Repetitive Avalanche Current | 5.2 A; pulse width limited by maximum junction temperature |
| Repetitive Avalanche Energy | 5.0 mJ; pulse width limited by maximum junction temperature |
| Maximum Power Dissipation | 50 W; TC=25°C |
| Peak Diode Recovery dV/dt | 5.0 V/ns; ISD≤5.2 A, di/dt≤95 A/μs, VDD≤VDS, TJ≤150°C |
| Operating Junction Temperature Range | -55 to +150 °C; operating |
| Storage Temperature Range | -55 to +150 °C; storage |
| Soldering Peak Temperature | 300 °C; for 10 s, 1.6 mm from case |
| Mounting Torque | 10 lbf·in / 1.1 N·m; 6-32 or M3 screw |
| Maximum Junction-to-Ambient Thermal Resistance | 62 °C/W max; thermal resistance rating |
| Case-to-Sink Thermal Resistance | 0.50 °C/W typ; flat, greased surface |
| Maximum Junction-to-Case Thermal Resistance | 2.5 °C/W max; drain |
| Drain-Source Breakdown Voltage | 200 V min; VGS=0 V, ID=250 μA, TJ=25°C |
| Drain-Source Breakdown Voltage Temperature Coefficient | 0.29 V/°C typ; referenced to 25°C, ID=1 mA |
| Gate-Source Threshold Voltage | 2.0 V min, 4.0 V max; VDS=VGS, ID=250 μA, TJ=25°C |
| Gate-Source Leakage | ±100 nA max; VGS=±20 V, TJ=25°C |
| Zero Gate Voltage Drain Current | 25 μA max; VDS=200 V, VGS=0 V, TJ=25°C |
| Zero Gate Voltage Drain Current | 250 μA max; VDS=160 V, VGS=0 V, TJ=125°C |
| Drain-Source On-State Resistance | 0.80 Ω max; VGS=10 V, ID=3.1 A, pulse width≤300 μs, duty cycle≤2% |
| Forward Transconductance | 1.5 S min; VDS=50 V, ID=3.1 A, TJ=25°C |
| Input Capacitance | 260 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Output Capacitance | 100 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Reverse Transfer Capacitance | 30 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Total Gate Charge | 14 nC max; ID=4.8 A, VDS=160 V, VGS=10 V |
| Gate-Source Charge | 3.0 nC max; ID=4.8 A, VDS=160 V, VGS=10 V |
| Gate-Drain Charge | 7.9 nC max; ID=4.8 A, VDS=160 V, VGS=10 V |
| Turn-On Delay Time | 7.2 ns typ; VDD=100 V, ID=4.8 A, Rg=18 Ω, RD=20 Ω |
| Rise Time | 12 ns typ; VDD=100 V, ID=4.8 A, Rg=18 Ω, RD=20 Ω |
| Turn-Off Delay Time | 29 ns typ; VDD=100 V, ID=4.8 A, Rg=18 Ω, RD=20 Ω |
| Fall Time | 13 ns typ; VDD=100 V, ID=4.8 A, Rg=18 Ω, RD=20 Ω |
| Gate Input Resistance | 0.8 Ω min, 3.5 Ω max; f=1 MHz, open drain |
| Internal Drain Inductance | 4.5 nH typ; between lead, 6 mm from package and center of die contact |
| Internal Source Inductance | 7.5 nH typ; between lead, 6 mm from package and center of die contact |
| Continuous Source-Drain Diode Current | 5.2 A max; integral reverse p-n junction diode |
| Pulsed Diode Forward Current | 18 A max; pulse width limited by maximum junction temperature |
| Body Diode Voltage | 1.8 V max; TJ=25°C, IS=5.2 A, VGS=0 V |
| Body Diode Reverse Recovery Time | 150 ns typ, 300 ns max; TJ=25°C, IF=4.8 A, dI/dt=100 A/μs |
| Body Diode Reverse Recovery Charge | 0.91 μC typ, 1.8 μC max; TJ=25°C, IF=4.8 A, dI/dt=100 A/μs |
| Forward Turn-On Time | Intrinsic turn-on time negligible; turn-on dominated by LS and LD |
| Configuration | Single; product summary |
| Ordering Part Number | IRF620PbF; Lead (Pb)-free version |
| Ordering Part Number | IRF620PbF-BE3; Lead (Pb)-free and halogen-free version |
| Datasheet Status | request_only |
Product Overview
The device electrical data includes a 200 V minimum drain-source breakdown voltage, 2.0 V to 4.0 V gate-source threshold voltage, and 0.80 Ω maximum drain-source on-state resistance at VGS=10 V and ID=3.1 A. Dynamic parameters include 260 pF typical input capacitance, 100 pF typical output capacitance, 30 pF typical reverse transfer capacitance, and 14 nC maximum total gate charge.
Key Features
- 200 V drain-source absolute maximum voltage
- ±20 V gate-source absolute maximum voltage
- 5.2 A continuous drain current at TC=25°C
- 18 A pulsed drain current rating
- 0.80 Ω maximum drain-source on-state resistance
- 14 nC maximum total gate charge
- 260 pF typical input capacitance
- 50 W maximum power dissipation at TC=25°C
- 2.5°C/W maximum junction-to-case thermal resistance
- TO-220AB package with 1.1 N·m mounting torque
Typical Applications
- 200 V power switching stages
- TO-220AB through-hole power designs
- Avalanche-rated switching circuits
- Body-diode conduction paths
- Gate-driven power control circuits
- Thermally managed MOSFET assemblies
Procurement Notes
When requesting a quote for IRF620, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What package is used for the Vishay IRF620?
The IRF620 is specified in a TO-220AB package. The extracted assembly data also lists a 10 lbf·in or 1.1 N·m mounting torque for a 6-32 or M3 screw.
What are the main voltage and current ratings?
The IRF620 has a 200 V drain-source voltage absolute maximum rating and a ±20 V gate-source voltage rating at TC=25°C. Continuous drain current is 5.2 A at TC=25°C and 3.3 A at TC=100°C with VGS=10 V.
What is the specified on-state resistance?
Drain-source on-state resistance is specified as 0.80 Ω maximum with VGS=10 V and ID=3.1 A, using a pulse width of 300 μs or less and duty cycle of 2% or less.
What gate charge data is provided for IRF620?
At ID=4.8 A, VDS=160 V, and VGS=10 V, the datasheet facts list 14 nC maximum total gate charge, 3.0 nC maximum gate-source charge, and 7.9 nC maximum gate-drain charge.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.