Specifications
| Type | Description |
|---|---|
| Part Number | IRF9540 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package Case | TO-247; TO-247AC high voltage; body D 20.40-20.70 mm, E 15.50-15.87 mm, lead pitch e 5.46 mm BSC |
| Part number shown in datasheet | IRFP460; condition: Datasheet title/product marking; source page: 1 |
| Datasheet Manufacturer | Vishay Siliconix; condition: Datasheet header; source page: 1 |
| Channel type | N-Channel MOSFET; condition: Device description; source page: 1 |
| Configuration | Single; condition: Product summary; source page: 1 |
| Drain-source voltage | 500 V; condition: Product summary; VDS; source page: 1 |
| Drain-source on-state resistance | 0.27 ohm max; condition: VGS=10 V; source page: 1 |
| Total gate charge | 210 nC max; condition: Product summary; Qg; source page: 1 |
| Gate-source charge | 29 nC; condition: Product summary; Qgs; source page: 1 |
| Gate-drain charge | 110 nC; condition: Product summary; Qgd; source page: 1 |
| Package | TO-247; condition: Ordering information; source page: 1 |
| Lead-free ordering part number | IRFP460PbF; condition: Ordering information; source page: 1 |
| Drain-source voltage absolute maximum | 500 V; condition: TC=25°C unless otherwise noted; source page: 1 |
| Gate-source voltage absolute maximum | +/-20 V; condition: TC=25°C unless otherwise noted; source page: 1 |
| Continuous drain current at TC=25°C | 20 A; condition: VGS=10 V, TC=25°C; source page: 1 |
| Continuous drain current at TC=100°C | 13 A; condition: VGS=10 V, TC=100°C; source page: 1 |
| Pulsed drain current | 80 A; condition: Repetitive rating; pulse width limited by maximum junction temperature; source page: 1 |
| Linear derating factor | 2.2 W/°C; condition: TC=25°C unless otherwise noted; source page: 1 |
| Single pulse avalanche energy | 960 mJ; condition: VDD=50 V, starting TJ=25°C, L=4.3 mH, RG=25 ohm, IAS=20 A; source page: 1 |
| Repetitive avalanche current | 20 A; condition: Repetitive rating; pulse width limited by maximum junction temperature; source page: 1 |
| Repetitive avalanche energy | 28 mJ; condition: Repetitive rating; pulse width limited by maximum junction temperature; source page: 1 |
| Maximum power dissipation | 280 W; condition: TC=25°C; source page: 1 |
| Peak diode recovery dV/dt | 3.5 V/ns; condition: ISD<=20 A, dI/dt<=160 A/us, VDD<=VDS, TJ<=150°C; source page: 1 |
| Operating junction and storage temperature range | -55 to +150 °C; condition: TJ, Tstg; source page: 1 |
| Soldering peak temperature | 300 °C; condition: For 10 s, 1.6 mm from case; source page: 1 |
| Mounting torque | 10 lbf in; 1.1 N m; condition: 6-32 or M3 screw; source page: 1 |
| Maximum junction-to-ambient thermal resistance | 40 °C/W max; condition: RthJA; source page: 2 |
| Case-to-sink thermal resistance | 0.24 °C/W typ; condition: Flat, greased surface; RthCS; source page: 2 |
| Maximum junction-to-case thermal resistance | 0.45 °C/W max; condition: Drain; RthJC; source page: 2 |
| Drain-source breakdown voltage | 500 V min; condition: VGS=0 V, ID=250 uA; source page: 2 |
| Drain-source breakdown voltage temperature coefficient | 0.63 V/°C typ; condition: Referenced to 25°C, ID=1 mA; source page: 2 |
| Gate-source threshold voltage | 2.0 V min, 4.0 V max; condition: VDS=VGS, ID=250 uA; source page: 2 |
| Gate-source leakage | +/-100 nA max; condition: VGS=+/-20 V; source page: 2 |
| Zero gate voltage drain current at VDS=500 V | 25 uA max; condition: VDS=500 V, VGS=0 V; source page: 2 |
| Zero gate voltage drain current at TJ=125°C | 250 uA max; condition: VDS=400 V, VGS=0 V, TJ=125°C; source page: 2 |
| Drain-source on-state resistance detailed condition | 0.27 ohm max; condition: VGS=10 V, ID=12 A, pulse width<=300 us, duty cycle<=2%; source page: 2 |
| Forward transconductance | 13 S min; condition: VDS=50 V, ID=12 A, pulse width<=300 us, duty cycle<=2%; source page: 2 |
| Input capacitance | 4200 pF typ; condition: VGS=0 V, VDS=25 V, f=1.0 MHz; source page: 2 |
| Output capacitance | 870 pF typ; condition: VGS=0 V, VDS=25 V, f=1.0 MHz; source page: 2 |
| Reverse transfer capacitance | 350 pF typ; condition: VGS=0 V, VDS=25 V, f=1.0 MHz; source page: 2 |
| Total gate charge detailed condition | 210 nC max; condition: ID=20 A, VDS=400 V, VGS=10 V; source page: 2 |
| Gate-source charge detailed condition | 29 nC max; condition: ID=20 A, VDS=400 V, VGS=10 V; source page: 2 |
| Gate-drain charge detailed condition | 110 nC max; condition: ID=20 A, VDS=400 V, VGS=10 V; source page: 2 |
| Turn-on delay time | 18 ns typ; condition: VDD=250 V, ID=20 A, RG=4.3 ohm, RD=13 ohm; source page: 2 |
| Rise time | 59 ns typ; condition: VDD=250 V, ID=20 A, RG=4.3 ohm, RD=13 ohm; source page: 2 |
| Turn-off delay time | 150 ns typ; condition: VDD=250 V, ID=20 A, RG=4.3 ohm, RD=13 ohm; source page: 2 |
| Fall time | 58 ns typ; condition: VDD=250 V, ID=20 A, RG=4.3 ohm, RD=13 ohm; source page: 2 |
| Internal drain inductance | 5.0 nH typ; condition: Between lead 6 mm from package and center of die contact; source page: 2 |
| Internal source inductance | 13 nH typ; condition: Between lead 6 mm from package and source die contact; source page: 2 |
| Continuous source-drain diode current | 20 A max; condition: MOSFET body diode; source page: 2 |
| Pulsed diode forward current | 80 A max; condition: Repetitive rating; pulse width limited by maximum junction temperature; source page: 2 |
| Body diode voltage | 1.8 V max; condition: TJ=25°C, IS=20 A, VGS=0 V, pulse width<=300 us, duty cycle<=2%; source page: 2 |
| Body diode reverse recovery time | 570 ns typ, 860 ns max; condition: TJ=25°C, IF=20 A, dI/dt=100 A/us, pulse width<=300 us, duty cycle<=2%; source page: 2 |
| Body diode reverse recovery charge | 5.7 uC typ, 8.6 uC max; condition: TJ=25°C, IF=20 A, dI/dt=100 A/us, pulse width<=300 us, duty cycle<=2%; source page: 2 |
| Forward turn-on time | Intrinsic turn-on time negligible; condition: Turn-on dominated by LS and LD; source page: 2 |
| Package lead assignments | 1 Gate, 2 Drain, 3 Source, 4 Drain; condition: TO-247AC package drawing; source page: 9 |
| Package reference | JEDEC TO-247 variation AC; condition: TO-247AC high voltage package information; source page: 8 |
| Package body height A | 4.83 mm min, 5.02 mm nom, 5.21 mm max; condition: TO-247AC Version 1 facility code 9; source page: 8 |
| Package body length D | 20.40 mm min, 20.55 mm nom, 20.70 mm max; condition: TO-247AC Version 1 facility code 9; source page: 8 |
| Package body width E | 15.50 mm min, 15.70 mm nom, 15.87 mm max; condition: TO-247AC Version 1 facility code 9; source page: 8 |
| Package lead pitch e | 5.46 mm BSC; condition: TO-247AC Version 1 facility code 9; source page: 8 |
| Package mounting hole diameter P | 3.56 mm min, 3.61 mm nom, 3.65 mm max; condition: TO-247AC Version 1 facility code 9; source page: 8 |
| Datasheet Status | request_only |
Product Overview
The extracted datasheet facts describe a Vishay Siliconix IRFP460 single N-channel MOSFET, while the CMS part number supplied for this record is IRF9540. The electrical profile is for a 500 V drain-source device with 20 A continuous drain current at TC=25°C, 13 A at TC=100°C, and 80 A pulsed drain current under the datasheet repetitive rating condition.
Key Features
- Single N-channel MOSFET configuration
- 500 V drain-source voltage rating
- 0.27 ohm maximum RDS(on) at VGS=10 V
- 20 A continuous drain current at TC=25°C
- 80 A pulsed drain current repetitive rating
- 210 nC maximum total gate charge
- 960 mJ single pulse avalanche energy
- 280 W maximum power dissipation at TC=25°C
- TO-247 package with JEDEC TO-247AC reference
- Gate, drain, source, drain lead assignment
Typical Applications
- High-voltage power switching
- Power conversion stages
- Heat-sink-mounted power assemblies
- Inductive-load switching circuits
- Body-diode conduction paths
- Avalanche-rated switching designs
Procurement Notes
When requesting a quote for IRF9540, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What datasheet part number is shown for this record?
The extracted manufacturer datasheet facts show IRFP460 in the datasheet title and product marking, while the CMS product information for this content record lists the part number as IRF9540.
What package information is available from the datasheet facts?
The extracted facts identify a TO-247 package with JEDEC TO-247 variation AC reference. The package body length is 20.40 to 20.70 mm, body width is 15.50 to 15.87 mm, and lead pitch is 5.46 mm BSC.
What are the main electrical limits in the extracted facts?
The grounded data lists 500 V drain-source voltage, +/-20 V gate-source voltage, 20 A continuous drain current at TC=25°C, 13 A at TC=100°C, and 80 A pulsed drain current under the repetitive rating condition.
What switching and gate charge data is provided?
The extracted facts list 210 nC maximum total gate charge at ID=20 A, VDS=400 V, and VGS=10 V. Switching values include 18 ns turn-on delay, 59 ns rise time, 150 ns turn-off delay, and 58 ns fall time.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.