IRFP140 N-channel Power MOSFET

Vishay Power_Management — specifications, applications, sourcing support and RFQ.

IRFP140 N-channel Power MOSFET

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
IRFP140
Manufacturer
Vishay
Package
TO-247AC; body dimensions vary by facility code, e.g. Version 1 D=20.40-20.70 mm, E=15.50-15.87 mm, lead pitch e=5.46 mm BSC
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

IRFP140 from Vishay is a single N-channel power MOSFET in the Power_Management category. It uses a TO-247AC package with facility-dependent body dimensions and 5.46 mm BSC lead pitch. Key ratings include 100 V drain-source voltage, 31 A continuous drain current at TC=25°C, 22 A at TC=100°C, 120 A pulsed drain current, and 180 W maximum power dissipation. Electrical parameters include 0.077 ohm maximum on-state resistance at VGS=10 V and ID=19 A, 72 nC maximum total gate charge, and ±20 V gate-source voltage rating.

Specifications

TypeDescription
Part NumberIRFP140
ManufacturerVishay
Product TypeLDO Regulator
CategoryPower Management
Package / CaseTO-247AC; body dimensions vary by facility code, e.g. Version 1 D=20.40-20.70 mm, E=15.50-15.87 mm, lead pitch e=5.46 mm BSC
Drain-Source Voltage100 V
Drain-Source On-State Resistance0.077 ohm max
Total Gate Charge72 nC max
Gate-Source Charge11 nC max
Gate-Drain Charge32 nC max
ConfigurationSingle
Gate-Source Voltage±20 V
Continuous Drain Current31 A
Continuous Drain Current22 A
Pulsed Drain Current120 A
Linear Derating Factor1.2 W/°C
Single Pulse Avalanche Energy100 mJ
Repetitive Avalanche Current31 A
Repetitive Avalanche Energy18 mJ
Maximum Power Dissipation180 W
Peak Diode Recovery dV/dt5.5 V/ns
Operating Junction Temperature Range-55 to +175°C
Storage Temperature Range-55 to +175°C
Soldering Peak Temperature300°C
Mounting Torque10 lbf·in / 1.1 N·m
Maximum Junction-to-Ambient Thermal Resistance40°C/W max
Case-to-Sink Thermal Resistance0.24°C/W typ
Maximum Junction-to-Case Thermal Resistance0.83°C/W max
Drain-Source Breakdown Voltage100 V min
Drain-Source Breakdown Voltage Temperature Coefficient0.13 V/°C typ
Gate-Source Threshold Voltage2.0 V min, 4.0 V max
Gate-Source Leakage±100 nA max
Zero Gate Voltage Drain Current25 µA max
Zero Gate Voltage Drain Current250 µA max
Forward Transconductance9.8 S min
Input Capacitance1700 pF typ
Output Capacitance550 pF typ
Reverse Transfer Capacitance110 pF typ
Turn-On Delay Time11 ns typ
Rise Time45 ns typ
Turn-Off Delay Time43 ns typ
Fall Time43 ns typ
Internal Drain Inductance5.0 nH typ
Internal Source Inductance13 nH typ
Continuous Source-Drain Diode Current31 A max
Pulsed Diode Forward Current120 A max
Body Diode Voltage2.5 V max
Body Diode Reverse Recovery Time180 ns typ, 360 ns max
Body Diode Reverse Recovery Charge1.3 µC typ, 2.8 µC max
Forward Turn-On TimeIntrinsic turn-on time is negligible
Ordering Part NumberIRFP140PbF
Pin Assignments1=Gate, 2=Drain, 3=Source, 4=Drain
Datasheet Statusrequest_only

Product Overview

The Vishay IRFP140 is a single N-channel power MOSFET intended for power-management switching roles where the design requires a 100 V drain-source rating and a TO-247AC through-hole power package. The package information identifies pins as 1=Gate, 2=Drain, 3=Source, and 4=Drain, with package body dimensions varying by facility code and Version 1 dimensions listed as D=20.40-20.70 mm and E=15.50-15.87 mm.

The device is rated for 31 A continuous drain current at TC=25°C with VGS=10 V, reduced to 22 A at TC=100°C, and supports 120 A pulsed drain current under the repetitive pulse limitation. Its maximum on-state resistance is 0.077 ohm at VGS=10 V, ID=19 A, and TJ=25°C. Switching and drive data include 72 nC maximum total gate charge, 11 nC gate-source charge, 32 nC gate-drain charge, and typical timing values of 11 ns turn-on delay, 45 ns rise time, 43 ns turn-off delay, and 43 ns fall time.

Thermal and assembly limits include 180 W maximum power dissipation at TC=25°C, 0.83°C/W maximum junction-to-case thermal resistance, 40°C/W maximum junction-to-ambient thermal resistance, 300°C soldering peak temperature for 10 seconds at 1.6 mm from the case, and 10 lbf·in / 1.1 N·m mounting torque with a 6-32 or M3 screw.

Key Features

  • Single N-channel MOSFET configuration
  • 100 V drain-source voltage rating
  • 0.077 ohm maximum on-state resistance
  • 31 A continuous drain current at TC=25°C
  • 120 A repetitive pulsed drain current rating
  • 180 W maximum power dissipation at TC=25°C
  • 72 nC maximum total gate charge
  • TO-247AC package with drain tab connection
  • -55 to +175°C junction temperature range
  • Body diode rated for 31 A continuous current

Typical Applications

  • 100 V power switching stages
  • TO-247AC heat-sinked power designs
  • Gate-driven MOSFET switching circuits
  • Avalanche-rated power switching circuits
  • Body-diode conduction paths
  • High-current pulsed switching designs

Procurement Notes

When requesting a quote for IRFP140, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of device is the Vishay IRFP140?

The IRFP140 is a Vishay single N-channel power MOSFET in the Power_Management category. It is supplied in a TO-247AC package, with pin assignments listed as Gate, Drain, Source, and Drain tab.

What are the main current and voltage ratings for IRFP140?

The IRFP140 has a 100 V drain-source voltage rating. Continuous drain current is 31 A at TC=25°C and 22 A at TC=100°C with VGS=10 V, while pulsed drain current is rated at 120 A.

What gate-drive and switching data are specified?

At ID=17 A, VDS=80 V, and VGS=10 V, total gate charge is 72 nC maximum. Typical switching data at VDD=50 V and ID=17 A includes 11 ns turn-on delay, 45 ns rise time, 43 ns turn-off delay, and 43 ns fall time.

What thermal limits should be considered for this MOSFET?

The IRFP140 is rated for 180 W maximum power dissipation at TC=25°C. Thermal resistance values include 0.83°C/W maximum junction-to-case, 40°C/W maximum junction-to-ambient, and 0.24°C/W typical case-to-sink on a flat, greased surface.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

Request Quote Request Datasheet