Specifications
| Type | Description |
|---|---|
| Part Number | IRFP150 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package/Case | TO-247AC; body D 20.40-20.70 mm and E 15.50-15.87 mm for version 1; lead pitch e 5.46 mm BSC |
| Drain-source voltage | 100 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Drain-source on-resistance | 0.055 Ω max; VGS=10 V, ID=25 A, TJ=25°C |
| Total gate charge | 140 nC max; ID=41 A, VDS=80 V, VGS=10 V |
| Gate-source charge | 29 nC max; ID=41 A, VDS=80 V, VGS=10 V |
| Gate-drain charge | 68 nC max; ID=41 A, VDS=80 V, VGS=10 V |
| Configuration | Single; product summary |
| Package | TO-247AC; ordering information |
| Lead-free ordering part number | IRFP150PbF; ordering information |
| Gate-source voltage | ±20 V; absolute maximum rating, TC=25°C unless otherwise noted |
| Continuous drain current | 41 A; VGS=10 V, TC=25°C |
| Continuous drain current | 29 A; VGS=10 V, TC=100°C |
| Pulsed drain current | 160 A; repetitive rating, pulse width limited by maximum junction temperature |
| Linear derating factor | 1.5 W/°C; absolute maximum rating |
| Single pulse avalanche energy | 830 mJ; VDD=25 V, starting TJ=25°C, L=740 µH, Rg=25 Ω, IAS=41 A |
| Repetitive avalanche current | 41 A; repetitive rating, pulse width limited by maximum junction temperature |
| Repetitive avalanche energy | 19 mJ; repetitive rating, pulse width limited by maximum junction temperature |
| Maximum power dissipation | 230 W; TC=25°C |
| Peak diode recovery dV/dt | 5.5 V/ns; ISD≤41 A, dI/dt≤300 A/µs, VDD≤VDS, TJ≤175°C |
| Operating junction temperature range | -55 to +175 °C; absolute maximum rating |
| Storage temperature range | -55 to +175 °C; absolute maximum rating |
| Soldering peak temperature | 300 °C; for 10 s, 1.6 mm from case |
| Mounting torque | 10 lbf·in; 1.1 N·m; 6-32 or M3 screw |
| Maximum junction-to-ambient thermal resistance | 40 °C/W max; thermal resistance rating |
| Case-to-sink thermal resistance | 0.24 °C/W typ; flat, greased surface |
| Maximum junction-to-case thermal resistance | 0.65 °C/W max; drain reference |
| Drain-source breakdown voltage | 100 V min; VGS=0 V, ID=250 µA, TJ=25°C |
| Drain-source breakdown voltage temperature coefficient | 0.14 V/°C typ; reference to 25°C, ID=1 mA |
| Gate-source threshold voltage | 2.0 V min, 4.0 V max; VDS=VGS, ID=250 µA, TJ=25°C |
| Gate-source leakage | ±100 nA max; VGS=±20 V, TJ=25°C |
| Zero gate voltage drain current | 25 µA max; VDS=100 V, VGS=0 V, TJ=25°C |
| Zero gate voltage drain current | 250 µA max; VDS=80 V, VGS=0 V, TJ=150°C |
| Forward transconductance | 13 S min; VDS=25 V, ID=25 A, TJ=25°C |
| Input capacitance | 2800 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Output capacitance | 1100 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Reverse transfer capacitance | 280 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Turn-on delay time | 16 ns typ; VDD=50 V, ID=41 A, Rg=6.2 Ω, RD=1.2 Ω |
| Rise time | 60 ns typ; VDD=50 V, ID=41 A, Rg=6.2 Ω, RD=1.2 Ω |
| Turn-off delay time | 120 ns typ; VDD=50 V, ID=41 A, Rg=6.2 Ω, RD=1.2 Ω |
| Fall time | 81 ns typ; VDD=50 V, ID=41 A, Rg=6.2 Ω, RD=1.2 Ω |
| Internal drain inductance | 5.0 nH typ; between lead, 6 mm (0.25 in) from package and center of die contact |
| Internal source inductance | 13 nH typ; between lead, 6 mm (0.25 in) from package and center of die contact |
| Continuous source-drain diode current | 41 A max; MOSFET body diode characteristic |
| Pulsed diode forward current | 160 A max; repetitive rating, pulse width limited by maximum junction temperature |
| Body diode voltage | 2.5 V max; TJ=25°C, IS=41 A, VGS=0 V |
| Body diode reverse recovery time | 220 ns typ, 330 ns max; TJ=25°C, IF=41 A, dI/dt=100 A/µs |
| Body diode reverse recovery charge | 1.9 µC typ, 2.9 µC max; TJ=25°C, IF=41 A, dI/dt=100 A/µs |
| Forward turn-on time | Intrinsic turn-on time is negligible; turn-on dominated by LS and LD |
| Lead assignments | 1=Gate, 2=Drain, 3=Source, 4=Drain; TO-247AC package information, version 2 |
| Package reference | JEDEC TO-247, variation AC; TO-247AC package information, version 1 |
| Datasheet Status | request_only |
Product Overview
The Vishay IRFP150 is an N-channel power MOSFET for Power_Management designs that require a single MOSFET configuration in a TO-247AC package. The device is rated for 100 V drain-source voltage and has a 100 V minimum drain-source breakdown voltage at VGS=0 V, ID=250 µA, and TJ=25°C. Its gate-source voltage absolute maximum rating is ±20 V, and the threshold voltage range is 2.0 V minimum to 4.0 V maximum under the stated datasheet test condition.
Current and switching data define the operating envelope. The IRFP150 supports 41 A continuous drain current at TC=25°C with VGS=10 V, 29 A at TC=100°C, and 160 A pulsed drain current. On-resistance is 0.055 Ω maximum at VGS=10 V, ID=25 A, and TJ=25°C. Gate charge values include 140 nC total gate charge, 29 nC gate-source charge, and 68 nC gate-drain charge.
The TO-247AC package uses lead assignments 1=Gate, 2=Drain, 3=Source, and 4=Drain. Assembly-related facts include 300°C soldering peak temperature for 10 s at 1.6 mm from the case and 10 lbf·in or 1.1 N·m mounting torque for a 6-32 or M3 screw.
Key Features
- 100 V drain-source voltage absolute maximum rating
- 0.055 Ω maximum on-resistance at VGS=10 V
- 41 A continuous drain current at TC=25°C
- 160 A pulsed drain current repetitive rating
- 230 W maximum power dissipation at TC=25°C
- 140 nC maximum total gate charge
- TO-247AC package with JEDEC TO-247 variation AC reference
- ±20 V gate-source voltage absolute maximum rating
- 830 mJ single pulse avalanche energy rating
- 0.65 °C/W maximum junction-to-case thermal resistance
- Body diode supports 41 A continuous current
- Operating junction temperature range from -55 to +175°C
Typical Applications
- Power switching stages
- Thermally managed TO-247 assemblies
- Avalanche-rated switching circuits
- Body-diode conduction paths
- 100 V MOSFET power designs
- High-current drain switching
- Gate-driven power control
Procurement Notes
When requesting a quote for IRFP150, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the IRFP150?
The IRFP150 is a Vishay N-channel power MOSFET in the Power_Management category. The extracted product data lists a single configuration and TO-247AC package.
What are the main voltage and current ratings?
The IRFP150 has a 100 V drain-source voltage rating, ±20 V gate-source voltage rating, 41 A continuous drain current at TC=25°C, 29 A at TC=100°C, and 160 A pulsed drain current.
What package and pin assignments does IRFP150 use?
The device uses a TO-247AC package with JEDEC TO-247 variation AC reference. The listed lead assignments are 1=Gate, 2=Drain, 3=Source, and 4=Drain.
What switching and gate charge data are provided?
At ID=41 A, VDS=80 V, and VGS=10 V, total gate charge is 140 nC maximum, gate-source charge is 29 nC maximum, and gate-drain charge is 68 nC maximum. Timing values include 16 ns turn-on delay and 120 ns turn-off delay.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.