IRFP240 N-channel Power MOSFET

Vishay Power_Management — specifications, applications, sourcing support and RFQ.

IRFP240 N-channel Power MOSFET

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
IRFP240
Manufacturer
Vishay
Package
TO-247AC; JEDEC TO-247 variation AC; lead pitch e=5.46 mm BSC; body approx. D=19.71-20.82 mm, E=15.29-15.87 mm depending facility version
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

IRFP240 from Vishay is an N-channel power MOSFET in the Power_Management category. It is supplied in a TO-247AC package with single configuration and lead assignments of Gate, Drain, Source, and Drain. Key limits include 200 V drain-source voltage, ±20 V gate-source voltage, 20 A continuous drain current at TC=25°C, and 150 W maximum power dissipation. Electrical parameters include 0.18 Ω maximum drain-source on-state resistance at VGS=10 V and ID=12 A, 70 nC maximum total gate charge, and 1300 pF typical input capacitance. It suits power switching designs that require the stated voltage, current, avalanche, diode, and thermal ratings.

Specifications

TypeDescription
Part NumberIRFP240
ManufacturerVishay
Product TypeLDO Regulator
CategoryPower Management
Package CaseTO-247AC; JEDEC TO-247 variation AC; lead pitch e=5.46 mm BSC; body approx. D=19.71-20.82 mm, E=15.29-15.87 mm depending facility version
Drain-Source Voltage200 V
Drain-Source On-State Resistance0.18 Ω max
Total Gate Charge70 nC max
Gate-Source Charge13 nC max
Gate-Drain Charge39 nC max
ConfigurationSingle
PackageTO-247AC
Lead-Free Ordering Part NumberIRFP240PbF
Gate-Source Voltage±20 V
Continuous Drain Current at TC=25°C20 A
Continuous Drain Current at TC=100°C12 A
Pulsed Drain Current80 A
Linear Derating Factor1.2 W/°C
Single Pulse Avalanche Energy510 mJ
Repetitive Avalanche Current20 A
Repetitive Avalanche Energy15 mJ
Maximum Power Dissipation150 W
Peak Diode Recovery dV/dt5.0 V/ns
Operating Junction and Storage Temperature Range-55 to +150°C
Soldering Peak Temperature300°C
Mounting Torque10 lbf·in / 1.1 N·m
Maximum Junction-to-Ambient Thermal Resistance40°C/W max
Case-to-Sink Thermal Resistance0.24°C/W typ
Maximum Junction-to-Case Thermal Resistance0.83°C/W max
Drain-Source Breakdown Voltage200 V min
Drain-Source Breakdown Voltage Temperature Coefficient0.29 V/°C typ
Gate-Source Threshold Voltage2.0 V min, 4.0 V max
Gate-Source Leakage±100 nA max
Zero Gate Voltage Drain Current at 200 V25 µA max
Zero Gate Voltage Drain Current at TJ=125°C250 µA max
Forward Transconductance6.9 S min
Input Capacitance1300 pF typ
Output Capacitance400 pF typ
Reverse Transfer Capacitance130 pF typ
Turn-On Delay Time14 ns typ
Rise Time51 ns typ
Turn-Off Delay Time45 ns typ
Fall Time36 ns typ
Internal Drain Inductance5.0 nH typ
Internal Source Inductance13 nH typ
Continuous Source-Drain Diode Current20 A max
Pulsed Diode Forward Current80 A max
Body Diode Voltage2.0 V max
Body Diode Reverse Recovery Time300 ns typ, 610 ns max
Body Diode Reverse Recovery Charge3.4 µC typ, 7.1 µC max
Forward Turn-On TimeIntrinsic turn-on time is negligible
Lead Assignments1=Gate, 2=Drain, 3=Source, 4=Drain
Package Version 1 Facility Code9
Package Version 2 Facility CodeY
Package Version 3 Facility CodeN
Datasheet Statusrequest_only

Product Overview

The IRFP240 is a Vishay single N-channel power MOSFET for Power_Management designs. Its primary ratings include 200 V drain-source voltage, ±20 V gate-source voltage, 20 A continuous drain current at TC=25°C, 12 A at TC=100°C, and 80 A pulsed drain current under the stated repetitive rating condition.

Electrical behavior is defined by 0.18 Ω maximum RDS(on) at VGS=10 V and ID=12 A, 2.0 V to 4.0 V gate-source threshold voltage, 6.9 S minimum forward transconductance, and 70 nC maximum total gate charge. Switching data includes 14 ns typical turn-on delay, 51 ns typical rise time, 45 ns typical turn-off delay, and 36 ns typical fall time under the specified test circuit.

The device uses a TO-247AC package with JEDEC TO-247 variation AC dimensions and a 5.46 mm BSC lead pitch. Assembly-related limits include 300°C soldering peak temperature for 10 s at 1.6 mm from case and 10 lbf·in / 1.1 N·m mounting torque for a 6-32 or M3 screw.

Key Features

  • 200 V drain-source voltage rating
  • 20 A continuous drain current at TC=25°C
  • 0.18 Ω maximum on-state resistance at VGS=10 V
  • 70 nC maximum total gate charge
  • Single N-channel MOSFET configuration
  • TO-247AC package with 5.46 mm BSC lead pitch
  • 150 W maximum power dissipation at TC=25°C
  • 510 mJ single pulse avalanche energy rating
  • 0.83°C/W maximum junction-to-case thermal resistance
  • Integral reverse diode rated 20 A continuous current

Typical Applications

  • 200 V power switching stages
  • Gate-driven MOSFET power control
  • High-current pulsed switching circuits
  • Avalanche-rated power circuits
  • TO-247AC heat-sink mounted assemblies
  • Reverse diode conduction paths
  • Power designs needing 150 W dissipation

Procurement Notes

When requesting a quote for IRFP240, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of device is the IRFP240?

The IRFP240 is a Vishay single N-channel power MOSFET in the Power_Management category. The extracted datasheet facts list a TO-247AC package and lead assignments of Gate, Drain, Source, and Drain.

What are the main voltage and current ratings?

The IRFP240 has a 200 V drain-source voltage rating and ±20 V gate-source voltage rating. Continuous drain current is 20 A at TC=25°C and 12 A at TC=100°C with VGS=10 V.

What is the specified on-state resistance?

The drain-source on-state resistance is specified as 0.18 Ω maximum. This value applies at VGS=10 V and ID=12 A with pulse width <=300 µs and duty cycle <=2%.

Which package and pin assignments are specified?

The device is listed in a TO-247AC package. The package information gives lead assignments as 1=Gate, 2=Drain, 3=Source, and 4=Drain.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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