Specifications
| Type | Description |
|---|---|
| Part Number | IRFPC60LC |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-247AC; body D 20.40-20.70 mm, E 15.50-15.87 mm for version 1; lead pitch e 5.46 mm BSC |
| Drain-Source Voltage | 600 V; Absolute maximum rating, TC=25°C |
| Gate-Source Voltage | ±30 V; Absolute maximum rating, TC=25°C |
| Continuous Drain Current | 16 A; VGS=10 V, TC=25°C |
| Continuous Drain Current | 10 A; VGS=10 V, TC=100°C |
| Pulsed Drain Current | 64 A; Repetitive rating; pulse width limited by maximum junction temperature |
| Linear Derating Factor | 2.2 W/°C; Absolute maximum rating |
| Single Pulse Avalanche Energy | 1000 mJ; VDD=25 V, starting TJ=25°C, L=7.2 mH, Rg=25 Ω, IAS=16 A |
| Repetitive Avalanche Current | 16 A; Repetitive rating; pulse width limited by maximum junction temperature |
| Repetitive Avalanche Energy | 28 mJ; Repetitive rating; pulse width limited by maximum junction temperature |
| Maximum Power Dissipation | 280 W; TC=25°C |
| Peak Diode Recovery dV/dt | 3.0 V/ns; ISD≤16 A, dI/dt≤140 A/μs, VDD≤VDS, TJ≤150°C |
| Operating Junction and Storage Temperature Range | -55 to +150 °C; TJ, Tstg |
| Soldering Peak Temperature | 300 °C; For 10 s, 1.6 mm from case |
| Mounting Torque | 10 lbf·in; 1.1 N·m; 6-32 or M3 screw |
| Maximum Junction-to-Ambient Thermal Resistance | 40 °C/W max; RthJA |
| Case-to-Sink Thermal Resistance | 0.24 °C/W typ; Flat, greased surface |
| Maximum Junction-to-Case Thermal Resistance | 0.45 °C/W max; Drain, RthJC |
| Drain-Source Breakdown Voltage | 600 V min; VGS=0 V, ID=250 μA, TJ=25°C |
| Drain-Source Breakdown Voltage Temperature Coefficient | 0.63 V/°C typ; Reference to 25°C, ID=1 mA |
| Gate-Source Threshold Voltage | 2.0 V min, 4.0 V max; VDS=VGS, ID=250 μA, TJ=25°C |
| Gate-Source Leakage | ±100 nA max; VGS=±20 V, TJ=25°C |
| Zero Gate Voltage Drain Current | 25 μA max; VDS=600 V, VGS=0 V, TJ=25°C |
| Zero Gate Voltage Drain Current | 250 μA max; VDS=480 V, VGS=0 V, TJ=125°C |
| Drain-Source On-State Resistance | 0.40 Ω max; VGS=10 V, ID=9.6 A, pulse width≤300 μs, duty cycle≤2% |
| Forward Transconductance | 11 S min; VDS=50 V, ID=9.6 A, TJ=25°C |
| Input Capacitance | 3500 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Output Capacitance | 400 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Reverse Transfer Capacitance | 39 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Total Gate Charge | 120 nC max; ID=16 A, VDS=360 V, VGS=10 V |
| Gate-Source Charge | 29 nC max; ID=16 A, VDS=360 V, VGS=10 V |
| Gate-Drain Charge | 48 nC max; ID=16 A, VDS=360 V, VGS=10 V |
| Turn-On Delay Time | 17 ns typ; VDD=300 V, ID=16 A, Rg=4.3 Ω, RD=18 Ω |
| Rise Time | 43 ns typ; VDD=300 V, ID=16 A, Rg=4.3 Ω, RD=18 Ω |
| Turn-Off Delay Time | 57 ns typ; VDD=300 V, ID=16 A, Rg=4.3 Ω, RD=18 Ω |
| Fall Time | 38 ns typ; VDD=300 V, ID=16 A, Rg=4.3 Ω, RD=18 Ω |
| Internal Drain Inductance | 5.0 nH typ; Between lead 6 mm from package and center of die contact |
| Internal Source Inductance | 13 nH typ; Between lead 6 mm from package and source die contact |
| Continuous Source-Drain Diode Current | 16 A max; MOSFET body diode |
| Pulsed Diode Forward Current | 64 A max; Repetitive rating; pulse width limited by maximum junction temperature |
| Body Diode Voltage | 1.8 V max; TJ=25°C, IS=16 A, VGS=0 V |
| Body Diode Reverse Recovery Time | 650 ns typ, 980 ns max; TJ=25°C, IF=16 A, dI/dt=100 A/μs |
| Body Diode Reverse Recovery Charge | 6.0 μC typ, 9.0 μC max; TJ=25°C, IF=16 A, dI/dt=100 A/μs |
| Forward Turn-On Time | Intrinsic turn-on time is negligible; Turn-on dominated by LS and LD |
| Configuration | Single; Product summary |
| Ordering Part Number | IRFPC60LCPbF; Lead (Pb)-free TO-247AC package |
| Datasheet Status | request_only |
Product Overview
The Vishay IRFPC60LC is an N-channel power MOSFET intended for Power_Management designs requiring a 600 V drain-source voltage rating. Its product summary identifies a single configuration, and the ordering part number IRFPC60LCPbF specifies the lead-free TO-247AC package option.
Electrical limits include ±30 V gate-source voltage, 16 A continuous drain current at TC=25°C, 10 A at TC=100°C, and 64 A pulsed drain current under the stated repetitive rating. The device also carries a 280 W maximum power dissipation rating at TC=25°C, with a 2.2 W/°C linear derating factor.
Switching and gate-drive related values include 120 nC maximum total gate charge, 29 nC maximum gate-source charge, 48 nC maximum gate-drain charge, and typical switching times of 17 ns turn-on delay, 43 ns rise time, 57 ns turn-off delay, and 38 ns fall time under the specified test circuit.
The TO-247AC package data includes body dimensions and 5.46 mm BSC lead pitch. Assembly-related ratings include 300°C soldering peak temperature for 10 seconds at 1.6 mm from the case and 10 lbf·in / 1.1 N·m mounting torque with a 6-32 or M3 screw.
Key Features
- 600 V drain-source voltage rating
- 16 A continuous drain current at TC=25°C
- 64 A repetitive pulsed drain current rating
- 0.40 Ω maximum drain-source on-state resistance
- 120 nC maximum total gate charge
- 280 W maximum power dissipation at TC=25°C
- 1000 mJ single pulse avalanche energy
- TO-247AC package with 5.46 mm BSC lead pitch
- 0.45 °C/W maximum junction-to-case thermal resistance
- Body diode rated for 16 A continuous current
Typical Applications
- High-voltage MOSFET switching stages
- Power management conversion circuits
- Gate-driven 600 V power designs
- Avalanche-rated switching applications
- TO-247AC heat-sink mounted assemblies
- Body-diode conduction paths
Procurement Notes
When requesting a quote for IRFPC60LC, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the IRFPC60LC?
The IRFPC60LC is a Vishay N-channel power MOSFET in the Power_Management category. The extracted product summary identifies it as a single-configuration MOSFET supplied in a TO-247AC package.
What are the main voltage and current ratings?
The device has a 600 V drain-source voltage rating and a ±30 V gate-source voltage rating. Continuous drain current is 16 A at TC=25°C and 10 A at TC=100°C with VGS=10 V.
What package and assembly ratings are specified?
The package is TO-247AC with listed body dimensions and 5.46 mm BSC lead pitch. Assembly data includes 300°C soldering peak temperature for 10 seconds at 1.6 mm from the case and 10 lbf·in / 1.1 N·m mounting torque.
What body diode characteristics are listed for this MOSFET?
The MOSFET body diode is rated for 16 A continuous source-drain current and 64 A pulsed diode forward current. Body diode voltage is 1.8 V maximum at TJ=25°C, IS=16 A, and VGS=0 V.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.