Specifications
| Type | Description |
|---|---|
| Part Number | IRFZ44 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-220AB |
| Drain-Source Voltage | 60 V |
| Drain-Source On-State Resistance | 0.028 ohm max |
| Total Gate Charge | 67 nC max |
| Gate-Source Charge | 18 nC |
| Gate-Drain Charge | 25 nC |
| Configuration | Single |
| Lead-Free Ordering Part Number | IRFZ44PbF |
| Lead-Free and Halogen-Free Ordering Part Number | IRFZ44PbF-BE3 |
| Drain-Source Voltage Absolute Maximum | 60 V |
| Gate-Source Voltage Absolute Maximum | +/-20 V |
| Continuous Drain Current | 50 A |
| Continuous Drain Current | 36 A |
| Pulsed Drain Current | 200 A |
| Linear Derating Factor | 1.0 W/degC |
| Single Pulse Avalanche Energy | 100 mJ |
| Maximum Power Dissipation | 150 W |
| Peak Diode Recovery dV/dt | 4.5 V/ns |
| Operating Junction and Storage Temperature Range | -55 to +175 degC |
| Soldering Peak Temperature | 300 degC |
| Mounting Torque | 10 lbf-in; 1.1 N-m |
| Maximum Junction-to-Ambient Thermal Resistance | 62 degC/W max |
| Case-to-Sink Thermal Resistance | 0.50 degC/W typ |
| Maximum Junction-to-Case Thermal Resistance | 1.0 degC/W max |
| Drain-Source Breakdown Voltage | 60 V min |
| Drain-Source Breakdown Voltage Temperature Coefficient | 0.060 V/degC typ |
| Gate-Source Threshold Voltage | 2.0 V min, 4.0 V max |
| Gate-Source Leakage | +/-100 nA max |
| Zero Gate Voltage Drain Current | 25 uA max |
| Zero Gate Voltage Drain Current | 250 uA max |
| Drain-Source On-State Resistance | 0.028 ohm max |
| Forward Transconductance | 15 S min |
| Input Capacitance | 1900 pF typ |
| Output Capacitance | 920 pF typ |
| Reverse Transfer Capacitance | 170 pF typ |
| Total Gate Charge | 67 nC max |
| Gate-Source Charge | 18 nC max |
| Gate-Drain Charge | 25 nC max |
| Turn-On Delay Time | 14 ns typ |
| Rise Time | 45 ns typ |
| Turn-Off Delay Time | 110 ns typ |
| Fall Time | 92 ns typ |
| Internal Drain Inductance | 4.5 nH typ |
| Internal Source Inductance | 7.5 nH typ |
| Continuous Source-Drain Diode Current | 50 A max |
| Pulsed Diode Forward Current | 200 A max |
| Body Diode Voltage | 2.5 V max |
| Body Diode Reverse Recovery Time | 120 ns typ, 180 ns max |
| Body Diode Reverse Recovery Charge | 0.53 nC typ, 0.80 nC max |
| Forward Turn-On Time | Intrinsic turn-on time is negligible |
| Datasheet Status | request_only |
Product Overview
The TO-220AB package supports heatsinked assemblies, with 1.0 degC/W maximum junction-to-case thermal resistance, 62 degC/W maximum junction-to-ambient thermal resistance, and 0.50 degC/W typical case-to-sink thermal resistance on a flat, greased surface. Assembly limits include 300 degC soldering peak temperature for 10 s at 1.6 mm from the case and 10 lbf-in or 1.1 N-m mounting torque for a 6-32 or M3 screw.
Switching and gate-drive parameters include 67 nC maximum total gate charge, 14 ns typical turn-on delay, 45 ns typical rise time, 110 ns typical turn-off delay, and 92 ns typical fall time under the listed test conditions. The integral body diode is specified for 50 A continuous source-drain current, 200 A pulsed diode forward current, and 2.5 V maximum body diode voltage at TJ=25 degC.
Key Features
- 60 V drain-source voltage rating
- 0.028 ohm maximum RDS(on) at VGS=10 V
- 50 A continuous drain current at TC=25 degC
- 36 A continuous drain current at TC=100 degC
- 200 A pulsed drain current repetitive rating
- 67 nC maximum total gate charge
- Single N-channel MOSFET configuration
- TO-220AB package with 1.0 degC/W RthJC max
- 100 mJ single pulse avalanche energy
- -55 to +175 degC junction and storage range
Typical Applications
- 60 V MOSFET switching stages
- Heatsinked TO-220AB power assemblies
- Gate-driven power control circuits
- Avalanche-rated power stages
- Body-diode conduction paths
- High-current pulsed load switching
- Thermally managed power designs
Procurement Notes
When requesting a quote for IRFZ44, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What voltage rating is specified for the IRFZ44?
The IRFZ44 is specified with a 60 V drain-source voltage in the product summary and a 60 V drain-source absolute maximum rating at TC=25 degC unless otherwise noted.
What package is used for the Vishay IRFZ44?
The IRFZ44 uses a TO-220AB package. Thermal data includes 1.0 degC/W maximum junction-to-case resistance and 0.50 degC/W typical case-to-sink resistance on a flat, greased surface.
What gate-charge values are listed for IRFZ44?
The datasheet facts list 67 nC maximum total gate charge, 18 nC gate-source charge, and 25 nC gate-drain charge. Under ID=51 A, VDS=48 V, and VGS=10 V, Qg remains 67 nC maximum.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.