Specifications
| Type | Description |
|---|---|
| Part Number | IRFZ44R |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-220AB |
| Drain-Source Voltage | 60 V; product summary / absolute maximum rating |
| Drain-Source On-State Resistance | 0.028 ohm max; VGS=10 V, ID=31 A |
| Total Gate Charge | 67 nC max; ID=51 A, VDS=48 V, VGS=10 V |
| Gate-Source Charge | 18 nC max; ID=51 A, VDS=48 V, VGS=10 V |
| Gate-Drain Charge | 25 nC max; ID=51 A, VDS=48 V, VGS=10 V |
| Configuration | Single; product summary |
| Gate-Source Voltage | +/-20 V; absolute maximum rating, TC=25°C |
| Continuous Drain Current | 50 A; VGS=10 V, TC=25°C |
| Continuous Drain Current | 36 A; VGS=10 V, TC=100°C |
| Pulsed Drain Current | 200 A; pulse width limited by maximum junction temperature |
| Linear Derating Factor | 1.0 W/°C; absolute maximum rating |
| Single Pulse Avalanche Energy | 100 mJ; VDD=25 V, starting TJ=25°C, L=44 uH, Rg=25 ohm, IAS=51 A |
| Maximum Power Dissipation | 150 W; TC=25°C |
| Peak Diode Recovery dV/dt | 4.5 V/ns; ISD<=51 A, dI/dt<=250 A/us, VDD<=VDS, TJ<=175°C |
| Operating Junction Temperature Range | -55 to +175°C; absolute maximum rating |
| Storage Temperature Range | -55 to +175°C; absolute maximum rating |
| Soldering Peak Temperature | 300°C; for 10 s, 1.6 mm from case |
| Mounting Torque | 10 lbf-in / 1.1 N-m; 6-32 or M3 screw |
| Maximum Junction-to-Ambient Thermal Resistance | 62°C/W max; thermal resistance rating |
| Case-to-Sink Thermal Resistance | 0.50°C/W typ; flat, greased surface |
| Maximum Junction-to-Case Thermal Resistance | 1.0°C/W max; drain |
| Drain-Source Breakdown Voltage | 60 V min; VGS=0 V, ID=250 uA |
| Drain-Source Breakdown Voltage Temperature Coefficient | 0.060 V/°C typ; referenced to 25°C, ID=1 mA |
| Gate-Source Threshold Voltage | 2.0 V min, 4.0 V max; VDS=VGS, ID=250 uA |
| Gate-Source Leakage | +/-100 nA max; VGS=+/-20 V |
| Zero Gate Voltage Drain Current | 25 uA max; VDS=60 V, VGS=0 V |
| Zero Gate Voltage Drain Current | 250 uA max; VDS=48 V, VGS=0 V, TJ=150°C |
| Forward Transconductance | 15 S min; VDS=25 V, ID=31 A |
| Input Capacitance | 1900 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Output Capacitance | 920 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Reverse Transfer Capacitance | 170 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Turn-On Delay Time | 14 ns typ; VDD=30 V, ID=51 A, Rg=9.1 ohm, RD=0.55 ohm |
| Rise Time | 110 ns typ; VDD=30 V, ID=51 A, Rg=9.1 ohm, RD=0.55 ohm |
| Turn-Off Delay Time | 45 ns typ; VDD=30 V, ID=51 A, Rg=9.1 ohm, RD=0.55 ohm |
| Fall Time | 92 ns typ; VDD=30 V, ID=51 A, Rg=9.1 ohm, RD=0.55 ohm |
| Internal Drain Inductance | 4.5 nH typ; between lead, 6 mm from package and center of die contact |
| Internal Source Inductance | 7.5 nH typ; between lead, 6 mm from package and center of die contact |
| Continuous Source-Drain Diode Current | 50 A max; integral reverse p-n junction diode, current limited by package |
| Pulsed Diode Forward Current | 200 A max; pulse width limited by maximum junction temperature |
| Body Diode Voltage | 2.5 V max; TJ=25°C, IS=51 A, VGS=0 V |
| Body Diode Reverse Recovery Time | 120 ns typ, 180 ns max; TJ=25°C, IF=51 A, dI/dt=100 A/us |
| Body Diode Reverse Recovery Charge | 0.53 uC typ, 0.80 uC max; TJ=25°C, IF=51 A, dI/dt=100 A/us |
| Forward Turn-On Time | Intrinsic turn-on time is negligible; turn-on dominated by LS and LD |
| Ordering Part Number | IRFZ44RPbF; lead (Pb)-free ordering information |
| Ordering Part Number | IRFZ44RPbF-BE3; lead (Pb)-free and halogen-free ordering information |
| Datasheet Status | request_only |
Product Overview
The IRFZ44R is a Vishay single N-channel power MOSFET supplied in a TO-220AB package. Its primary ratings include 60 V drain-source voltage, 50 A continuous drain current at TC=25°C, and 36 A at TC=100°C when driven with VGS=10 V. The device is also rated for 200 A pulsed drain current, with pulse width limited by maximum junction temperature.
Conduction and drive parameters include 0.028 ohm maximum drain-source on-state resistance at VGS=10 V and ID=31 A, a 2.0 V to 4.0 V gate-source threshold range, and 67 nC maximum total gate charge at ID=51 A, VDS=48 V, and VGS=10 V. Capacitance values are specified as 1900 pF input, 920 pF output, and 170 pF reverse transfer at VDS=25 V and 1.0 MHz.
Thermal and assembly data include 150 W maximum power dissipation at TC=25°C, 1.0°C/W maximum junction-to-case thermal resistance, 62°C/W maximum junction-to-ambient thermal resistance, and 0.50°C/W typical case-to-sink thermal resistance on a flat, greased surface. The datasheet also specifies 300°C soldering peak temperature for 10 s at 1.6 mm from the case and 10 lbf-in / 1.1 N-m mounting torque with a 6-32 or M3 screw.
Key Features
- 60 V drain-source voltage rating
- 0.028 ohm maximum on-state resistance at 31 A
- 50 A continuous drain current at TC=25°C
- 36 A continuous drain current at TC=100°C
- 200 A pulsed drain current capability
- 67 nC maximum total gate charge
- Single N-channel MOSFET configuration
- TO-220AB package case
- 150 W maximum power dissipation at TC=25°C
- -55 to +175°C junction temperature range
- 1.0°C/W maximum junction-to-case thermal resistance
- Integral body diode rated 50 A continuous
Typical Applications
- 60 V power switching stages
- High-current MOSFET drive circuits
- TO-220AB power assemblies
- Body-diode conduction paths
- Avalanche-rated switching circuits
- Thermally managed power designs
- Gate-charge constrained switching designs
Procurement Notes
When requesting a quote for IRFZ44R, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the IRFZ44R?
The IRFZ44R is a Vishay single N-channel power MOSFET in the Power_Management category. The extracted datasheet facts identify a TO-220AB package and specify 60 V drain-source voltage operation.
What is the maximum on-state resistance of IRFZ44R?
The drain-source on-state resistance is specified as 0.028 ohm maximum. This value applies at VGS=10 V and ID=31 A, so drive voltage and drain current conditions should be considered when using the value.
What current ratings are specified for this MOSFET?
The device is rated for 50 A continuous drain current at TC=25°C and 36 A at TC=100°C, both with VGS=10 V. Pulsed drain current is specified as 200 A, limited by maximum junction temperature.
What thermal limits are listed for IRFZ44R?
Thermal data includes 150 W maximum power dissipation at TC=25°C, 1.0°C/W maximum junction-to-case thermal resistance, 62°C/W maximum junction-to-ambient thermal resistance, and -55 to +175°C operating junction temperature range.
Which ordering part numbers are listed in the datasheet facts?
The extracted ordering information lists IRFZ44RPbF for lead-free ordering and IRFZ44RPbF-BE3 for lead-free and halogen-free ordering. These are ordering references associated with the IRFZ44R datasheet facts.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.