IRFZ44R N-channel Power MOSFET

Vishay Power_Management — specifications, applications, sourcing support and RFQ.

IRFZ44R N-channel Power MOSFET

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
IRFZ44R
Manufacturer
Vishay
Package
TO-220AB
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

IRFZ44R from Vishay is an N-channel power MOSFET in a TO-220AB package for Power_Management designs. The device is specified for 60 V drain-source voltage, 50 A continuous drain current at TC=25°C with VGS=10 V, and 36 A at TC=100°C. It has 0.028 ohm maximum drain-source on-state resistance at VGS=10 V and ID=31 A, with 67 nC maximum total gate charge under ID=51 A, VDS=48 V, VGS=10 V conditions. Key limits include +/-20 V gate-source voltage, 150 W power dissipation at TC=25°C, 200 A pulsed drain current, and -55 to +175°C operating junction temperature range.

Specifications

TypeDescription
Part NumberIRFZ44R
ManufacturerVishay
Product TypeLDO Regulator
CategoryPower Management
Package / CaseTO-220AB
Drain-Source Voltage60 V; product summary / absolute maximum rating
Drain-Source On-State Resistance0.028 ohm max; VGS=10 V, ID=31 A
Total Gate Charge67 nC max; ID=51 A, VDS=48 V, VGS=10 V
Gate-Source Charge18 nC max; ID=51 A, VDS=48 V, VGS=10 V
Gate-Drain Charge25 nC max; ID=51 A, VDS=48 V, VGS=10 V
ConfigurationSingle; product summary
Gate-Source Voltage+/-20 V; absolute maximum rating, TC=25°C
Continuous Drain Current50 A; VGS=10 V, TC=25°C
Continuous Drain Current36 A; VGS=10 V, TC=100°C
Pulsed Drain Current200 A; pulse width limited by maximum junction temperature
Linear Derating Factor1.0 W/°C; absolute maximum rating
Single Pulse Avalanche Energy100 mJ; VDD=25 V, starting TJ=25°C, L=44 uH, Rg=25 ohm, IAS=51 A
Maximum Power Dissipation150 W; TC=25°C
Peak Diode Recovery dV/dt4.5 V/ns; ISD<=51 A, dI/dt<=250 A/us, VDD<=VDS, TJ<=175°C
Operating Junction Temperature Range-55 to +175°C; absolute maximum rating
Storage Temperature Range-55 to +175°C; absolute maximum rating
Soldering Peak Temperature300°C; for 10 s, 1.6 mm from case
Mounting Torque10 lbf-in / 1.1 N-m; 6-32 or M3 screw
Maximum Junction-to-Ambient Thermal Resistance62°C/W max; thermal resistance rating
Case-to-Sink Thermal Resistance0.50°C/W typ; flat, greased surface
Maximum Junction-to-Case Thermal Resistance1.0°C/W max; drain
Drain-Source Breakdown Voltage60 V min; VGS=0 V, ID=250 uA
Drain-Source Breakdown Voltage Temperature Coefficient0.060 V/°C typ; referenced to 25°C, ID=1 mA
Gate-Source Threshold Voltage2.0 V min, 4.0 V max; VDS=VGS, ID=250 uA
Gate-Source Leakage+/-100 nA max; VGS=+/-20 V
Zero Gate Voltage Drain Current25 uA max; VDS=60 V, VGS=0 V
Zero Gate Voltage Drain Current250 uA max; VDS=48 V, VGS=0 V, TJ=150°C
Forward Transconductance15 S min; VDS=25 V, ID=31 A
Input Capacitance1900 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz
Output Capacitance920 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz
Reverse Transfer Capacitance170 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz
Turn-On Delay Time14 ns typ; VDD=30 V, ID=51 A, Rg=9.1 ohm, RD=0.55 ohm
Rise Time110 ns typ; VDD=30 V, ID=51 A, Rg=9.1 ohm, RD=0.55 ohm
Turn-Off Delay Time45 ns typ; VDD=30 V, ID=51 A, Rg=9.1 ohm, RD=0.55 ohm
Fall Time92 ns typ; VDD=30 V, ID=51 A, Rg=9.1 ohm, RD=0.55 ohm
Internal Drain Inductance4.5 nH typ; between lead, 6 mm from package and center of die contact
Internal Source Inductance7.5 nH typ; between lead, 6 mm from package and center of die contact
Continuous Source-Drain Diode Current50 A max; integral reverse p-n junction diode, current limited by package
Pulsed Diode Forward Current200 A max; pulse width limited by maximum junction temperature
Body Diode Voltage2.5 V max; TJ=25°C, IS=51 A, VGS=0 V
Body Diode Reverse Recovery Time120 ns typ, 180 ns max; TJ=25°C, IF=51 A, dI/dt=100 A/us
Body Diode Reverse Recovery Charge0.53 uC typ, 0.80 uC max; TJ=25°C, IF=51 A, dI/dt=100 A/us
Forward Turn-On TimeIntrinsic turn-on time is negligible; turn-on dominated by LS and LD
Ordering Part NumberIRFZ44RPbF; lead (Pb)-free ordering information
Ordering Part NumberIRFZ44RPbF-BE3; lead (Pb)-free and halogen-free ordering information
Datasheet Statusrequest_only

Product Overview

The IRFZ44R is a Vishay single N-channel power MOSFET supplied in a TO-220AB package. Its primary ratings include 60 V drain-source voltage, 50 A continuous drain current at TC=25°C, and 36 A at TC=100°C when driven with VGS=10 V. The device is also rated for 200 A pulsed drain current, with pulse width limited by maximum junction temperature.

Conduction and drive parameters include 0.028 ohm maximum drain-source on-state resistance at VGS=10 V and ID=31 A, a 2.0 V to 4.0 V gate-source threshold range, and 67 nC maximum total gate charge at ID=51 A, VDS=48 V, and VGS=10 V. Capacitance values are specified as 1900 pF input, 920 pF output, and 170 pF reverse transfer at VDS=25 V and 1.0 MHz.

Thermal and assembly data include 150 W maximum power dissipation at TC=25°C, 1.0°C/W maximum junction-to-case thermal resistance, 62°C/W maximum junction-to-ambient thermal resistance, and 0.50°C/W typical case-to-sink thermal resistance on a flat, greased surface. The datasheet also specifies 300°C soldering peak temperature for 10 s at 1.6 mm from the case and 10 lbf-in / 1.1 N-m mounting torque with a 6-32 or M3 screw.

Key Features

  • 60 V drain-source voltage rating
  • 0.028 ohm maximum on-state resistance at 31 A
  • 50 A continuous drain current at TC=25°C
  • 36 A continuous drain current at TC=100°C
  • 200 A pulsed drain current capability
  • 67 nC maximum total gate charge
  • Single N-channel MOSFET configuration
  • TO-220AB package case
  • 150 W maximum power dissipation at TC=25°C
  • -55 to +175°C junction temperature range
  • 1.0°C/W maximum junction-to-case thermal resistance
  • Integral body diode rated 50 A continuous

Typical Applications

  • 60 V power switching stages
  • High-current MOSFET drive circuits
  • TO-220AB power assemblies
  • Body-diode conduction paths
  • Avalanche-rated switching circuits
  • Thermally managed power designs
  • Gate-charge constrained switching designs

Procurement Notes

When requesting a quote for IRFZ44R, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of device is the IRFZ44R?

The IRFZ44R is a Vishay single N-channel power MOSFET in the Power_Management category. The extracted datasheet facts identify a TO-220AB package and specify 60 V drain-source voltage operation.

What is the maximum on-state resistance of IRFZ44R?

The drain-source on-state resistance is specified as 0.028 ohm maximum. This value applies at VGS=10 V and ID=31 A, so drive voltage and drain current conditions should be considered when using the value.

What current ratings are specified for this MOSFET?

The device is rated for 50 A continuous drain current at TC=25°C and 36 A at TC=100°C, both with VGS=10 V. Pulsed drain current is specified as 200 A, limited by maximum junction temperature.

What thermal limits are listed for IRFZ44R?

Thermal data includes 150 W maximum power dissipation at TC=25°C, 1.0°C/W maximum junction-to-case thermal resistance, 62°C/W maximum junction-to-ambient thermal resistance, and -55 to +175°C operating junction temperature range.

Which ordering part numbers are listed in the datasheet facts?

The extracted ordering information lists IRFZ44RPbF for lead-free ordering and IRFZ44RPbF-BE3 for lead-free and halogen-free ordering. These are ordering references associated with the IRFZ44R datasheet facts.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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