Specifications
| Type | Description |
|---|---|
| Part Number | IRL510 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Component Type | Other |
| Package / Case | TO-220AB |
| Drain-Source Voltage | 100 V; condition: Product summary; source page: 1 |
| Drain-Source On-State Resistance | 0.54 ohm max; condition: VGS=5.0 V; source page: 1 |
| Total Gate Charge | 6.1 nC max; condition: Product summary; source page: 1 |
| Gate-Source Charge | 2.6 nC; condition: Product summary; source page: 1 |
| Gate-Drain Charge | 3.3 nC; condition: Product summary; source page: 1 |
| Configuration | Single; condition: Product summary; source page: 1 |
| Lead-Free Ordering Part Number | IRL510PbF; condition: TO-220AB package; source page: 1 |
| Lead-Free and Halogen-Free Ordering Part Number | IRL510PbF-BE3; condition: TO-220AB package; source page: 1 |
| Gate-Source Voltage | +/-10 V; condition: Absolute maximum rating, TC=25 °C; source page: 1 |
| Continuous Drain Current | 5.6 A; condition: VGS=5 V, TC=25 °C; source page: 1 |
| Continuous Drain Current | 4.0 A; condition: VGS=5 V, TC=100 °C; source page: 1 |
| Pulsed Drain Current | 18 A; condition: Repetitive rating; pulse width limited by maximum junction temperature; source page: 1 |
| Linear Derating Factor | 0.29 W/°C; condition: Absolute maximum rating; source page: 1 |
| Single Pulse Avalanche Energy | 100 mJ; condition: VDD=25 V, starting TJ=25 °C, L=4.8 mH, Rg=25 ohm, IAS=5.6 A; source page: 1 |
| Repetitive Avalanche Current | 5.6 A; condition: Repetitive rating; pulse width limited by maximum junction temperature; source page: 1 |
| Repetitive Avalanche Energy | 4.3 mJ; condition: Repetitive rating; pulse width limited by maximum junction temperature; source page: 1 |
| Maximum Power Dissipation | 43 W; condition: TC=25 °C; source page: 1 |
| Peak Diode Recovery dV/dt | 5.5 V/ns; condition: ISD<=5.6 A, dI/dt<=75 A/us, VDD<=VDS, TJ<=175 °C; source page: 1 |
| Operating Junction and Storage Temperature Range | -55 to +175 °C; condition: Absolute maximum rating; source page: 1 |
| Soldering Peak Temperature | 300 °C; condition: For 10 s, 1.6 mm from case; source page: 1 |
| Mounting Torque | 10 lbf·in; 1.1 N·m; condition: 6-32 or M3 screw; source page: 1 |
| Maximum Junction-to-Ambient Thermal Resistance | 62 °C/W max; condition: Thermal resistance rating; source page: 2 |
| Case-to-Sink Thermal Resistance | 0.50 °C/W typ; condition: Flat, greased surface; source page: 2 |
| Maximum Junction-to-Case Thermal Resistance | 3.5 °C/W max; condition: Drain; source page: 2 |
| Drain-Source Breakdown Voltage | 100 V min; condition: VGS=0 V, ID=250 uA; source page: 2 |
| Drain-Source Voltage Temperature Coefficient | 0.12 V/°C typ; condition: Reference to 25 °C, ID=1 mA; source page: 2 |
| Gate-Source Threshold Voltage | 1.0 V min, 2.0 V max; condition: VDS=VGS, ID=250 uA; source page: 2 |
| Gate-Source Leakage | +/-100 nA max; condition: VGS=+/-10 V; source page: 2 |
| Zero Gate Voltage Drain Current | 25 uA max; condition: VDS=100 V, VGS=0 V; source page: 2 |
| Zero Gate Voltage Drain Current | 250 uA max; condition: VDS=80 V, VGS=0 V, TJ=150 °C; source page: 2 |
| Drain-Source On-State Resistance | 0.54 ohm max; condition: VGS=5.0 V, ID=3.4 A, pulse width<=300 us, duty cycle<=2 %; source page: 2 |
| Drain-Source On-State Resistance | 0.76 ohm max; condition: VGS=4.0 V, ID=2.8 A, pulse width<=300 us, duty cycle<=2 %; source page: 2 |
| Forward Transconductance | 1.9 S min; condition: VDS=50 V, ID=3.4 A, pulse width<=300 us, duty cycle<=2 %; source page: 2 |
| Input Capacitance | 250 pF typ; condition: VGS=0 V, VDS=25 V, f=1.0 MHz; source page: 2 |
| Output Capacitance | 80 pF typ; condition: VGS=0 V, VDS=25 V, f=1.0 MHz; source page: 2 |
| Reverse Transfer Capacitance | 15 pF typ; condition: VGS=0 V, VDS=25 V, f=1.0 MHz; source page: 2 |
| Total Gate Charge | 6.1 nC max; condition: ID=5.6 A, VDS=80 V, VGS=5.0 V; source page: 2 |
| Gate-Source Charge | 2.6 nC max; condition: ID=5.6 A, VDS=80 V, VGS=5.0 V; source page: 2 |
| Gate-Drain Charge | 3.3 nC max; condition: ID=5.6 A, VDS=80 V, VGS=5.0 V; source page: 2 |
| Turn-On Delay Time | 9.3 ns typ; condition: VDD=50 V, RD=12 ohm, RG=8.4 ohm, ID=5.6 A; source page: 2 |
| Rise Time | 47 ns typ; condition: VDD=50 V, RD=12 ohm, RG=8.4 ohm, ID=5.6 A; source page: 2 |
| Turn-Off Delay Time | 16 ns typ; condition: VDD=50 V, RD=12 ohm, RG=8.4 ohm, ID=5.6 A; source page: 2 |
| Fall Time | 18 ns typ; condition: VDD=50 V, RD=12 ohm, RG=8.4 ohm, ID=5.6 A; source page: 2 |
| Internal Drain Inductance | 4.5 nH typ; condition: Between lead 6 mm (0.25 in) from package and center of die contact; source page: 2 |
| Internal Source Inductance | 7.5 nH typ; condition: Between lead 6 mm (0.25 in) from package and center of die contact; source page: 2 |
| Continuous Source-Drain Diode Current | 5.6 A max; condition: MOSFET integral reverse p-n junction diode; source page: 2 |
| Pulsed Diode Forward Current | 18 A max; condition: Repetitive rating; pulse width limited by maximum junction temperature; source page: 2 |
| Body Diode Voltage | 2.5 V max; condition: TJ=25 °C, IS=5.6 A, VGS=0 V, pulse width<=300 us, duty cycle<=2 %; source page: 2 |
| Body Diode Reverse Recovery Time | 110 ns typ, 130 ns max; condition: TJ=25 °C, IF=5.6 A, dI/dt=100 A/us, pulse width<=300 us, duty cycle<=2 %; source page: 2 |
| Body Diode Reverse Recovery Charge | 0.50 uC typ, 0.65 uC max; condition: TJ=25 °C, IF=5.6 A, dI/dt=100 A/us, pulse width<=300 us, duty cycle<=2 %; source page: 2 |
| Forward Turn-On Time | Intrinsic turn-on time is negligible; condition: Turn-on dominated by LS and LD; source page: 2 |
| Gate Drive Type | Logic-level gate drive; condition: Feature list; source page: 1 |
| Operating Temperature Rating | 175 °C; condition: Feature list; source page: 1 |
| Channel Type | N-channel; condition: Product description; source page: 1 |
| Datasheet Status | request_only |
Product Overview
The Vishay IRL510 is a single N-channel power MOSFET intended for Power_Management designs that require a 100 V drain-source rating and logic-level gate drive. The device is packaged in TO-220AB and has ordering options IRL510PbF for lead-free supply and IRL510PbF-BE3 for lead-free and halogen-free supply.
Electrical limits include 0.54 ohm maximum drain-source on-state resistance at VGS=5.0 V and ID=3.4 A, or 0.76 ohm maximum at VGS=4.0 V and ID=2.8 A. Gate-source threshold voltage is specified from 1.0 V to 2.0 V, with gate-source leakage of +/-100 nA maximum at VGS=+/-10 V.
For thermal and assembly planning, the IRL510 is rated for 43 W maximum power dissipation at TC=25 °C, 3.5 °C/W maximum junction-to-case thermal resistance, and 62 °C/W maximum junction-to-ambient thermal resistance. It supports soldering at 300 °C for 10 s at 1.6 mm from the case and mounting torque of 10 lbf·in or 1.1 N·m using a 6-32 or M3 screw.
Key Features
- 100 V drain-source voltage rating
- Logic-level gate drive for low-voltage control
- 0.54 ohm maximum RDS(on) at VGS=5.0 V
- 6.1 nC maximum total gate charge
- 5.6 A continuous drain current at TC=25 °C
- 18 A repetitive pulsed drain current rating
- 43 W maximum power dissipation at TC=25 °C
- -55 to +175 °C junction and storage range
- TO-220AB package with 10 lbf·in mounting torque
- Integral body diode rated to 5.6 A continuous
Typical Applications
- Logic-level power switching
- Low-voltage gate-drive circuits
- TO-220AB power stages
- Avalanche-rated switching designs
- Body-diode commutation paths
- Thermally managed power control
- 100 V N-channel MOSFET replacement
Procurement Notes
When requesting a quote for IRL510, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of MOSFET is the IRL510?
The IRL510 is a Vishay single N-channel power MOSFET. It is listed in the Power_Management category and supplied in a TO-220AB package with logic-level gate drive.
What drain-source voltage rating does the IRL510 provide?
The IRL510 has a 100 V drain-source voltage rating in the product summary. Its drain-source breakdown voltage is specified as 100 V minimum at VGS=0 V and ID=250 uA.
What is the IRL510 on-state resistance at logic gate drive?
At VGS=5.0 V, the IRL510 drain-source on-state resistance is specified as 0.54 ohm maximum. The detailed condition is ID=3.4 A with pulse width <=300 us and duty cycle <=2 %.
What thermal limits are specified for the IRL510 package?
The IRL510 is rated for 43 W maximum power dissipation at TC=25 °C. Thermal resistance values include 3.5 °C/W maximum junction-to-case, 62 °C/W maximum junction-to-ambient, and 0.50 °C/W typical case-to-sink on a flat greased surface.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.