Specifications
| Type | Description |
|---|---|
| Part Number | IRL520 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-220AB |
| Component Type | Other |
| Drain-Source Voltage | 100 V |
| Gate-Source Voltage | ±10 V |
| Continuous Drain Current | 9.2 A |
| Continuous Drain Current | 6.5 A |
| Pulsed Drain Current | 36 A |
| Linear Derating Factor | 0.40 W/°C |
| Single Pulse Avalanche Energy | 170 mJ |
| Repetitive Avalanche Current | 9.2 A |
| Repetitive Avalanche Energy | 6.0 mJ |
| Maximum Power Dissipation | 60 W |
| Peak Diode Recovery dV/dt | 5.5 V/ns |
| Operating Junction and Storage Temperature Range | -55 to +175 °C |
| Soldering Peak Temperature | 300 °C |
| Mounting Torque | 10 lbf·in; 1.1 N·m |
| Junction-to-Ambient Thermal Resistance | max 62 °C/W |
| Case-to-Sink Thermal Resistance | typ 0.50 °C/W |
| Junction-to-Case Thermal Resistance | max 2.5 °C/W |
| Drain-Source Breakdown Voltage | min 100 V |
| Drain-Source Breakdown Voltage Temperature Coefficient | typ 0.12 V/°C |
| Gate-Source Threshold Voltage | min 1.0 V, max 2.0 V |
| Gate-Source Leakage | max ±100 nA |
| Zero Gate Voltage Drain Current | max 25 μA |
| Zero Gate Voltage Drain Current | max 250 μA |
| Drain-Source On-State Resistance | max 0.27 Ω |
| Drain-Source On-State Resistance | max 0.38 Ω |
| Forward Transconductance | min 3.2 S |
| Input Capacitance | typ 490 pF |
| Output Capacitance | typ 150 pF |
| Reverse Transfer Capacitance | typ 30 pF |
| Total Gate Charge | max 12 nC |
| Gate-Source Charge | max 3.0 nC |
| Gate-Drain Charge | max 7.1 nC |
| Turn-On Delay Time | typ 9.8 ns |
| Rise Time | typ 26 ns |
| Turn-Off Delay Time | typ 14 ns |
| Fall Time | typ 27 ns |
| Internal Drain Inductance | typ 4.5 nH |
| Internal Source Inductance | typ 7.5 nH |
| Continuous Source-Drain Diode Current | max 9.2 A |
| Pulsed Diode Forward Current | max 36 A |
| Body Diode Voltage | max 2.5 V |
| Body Diode Reverse Recovery Time | typ 130 ns, max 190 ns |
| Body Diode Reverse Recovery Charge | typ 0.83 μC, max 1.0 μC |
| Forward Turn-On Time | Intrinsic turn-on time is negligible |
| Configuration | Single |
| Logic-Level Gate Drive | Supported |
| Ordering Part Number | IRL520PbF |
| Ordering Part Number | IRL520PbF-BE3 |
| Datasheet Status | request_only |
Product Overview
The IRL520 is a Vishay single N-channel power MOSFET categorized for Power_Management use. It is supplied in a TO-220AB package and supports logic-level gate drive, with ordering references listed as IRL520PbF for the lead-free option and IRL520PbF-BE3 for the lead-free and halogen-free option.
Electrical ratings include 100 V drain-source voltage, ±10 V gate-source voltage, 9.2 A continuous drain current at VGS=5 V and TC=25°C, and 6.5 A at TC=100°C. Pulsed drain current is rated at 36 A, while maximum power dissipation is 60 W at TC=25°C with a 0.40 W/°C linear derating factor.
For conduction and drive design, the datasheet specifies a 1.0 V to 2.0 V gate-source threshold range, 0.27 Ω maximum RDS(on) at VGS=5.0 V and ID=5.5 A, and 0.38 Ω maximum at VGS=4.0 V and ID=4.6 A. Thermal limits include -55°C to +175°C junction and storage range, 2.5°C/W maximum junction-to-case resistance, and 62°C/W maximum junction-to-ambient resistance.
Key Features
- Single N-channel power MOSFET configuration
- TO-220AB package case for through-hole mounting
- 100 V maximum drain-source voltage rating
- ±10 V maximum gate-source voltage rating
- 9.2 A continuous drain current at TC=25°C
- 36 A pulsed drain current repetitive rating
- 0.27 Ω maximum RDS(on) at VGS=5.0 V
- 12 nC maximum total gate charge
- -55°C to +175°C junction and storage range
- Logic-level gate drive supported
Typical Applications
- Logic-level load switching
- Power management switching stages
- Low-side MOSFET switching
- Pulsed current control
- Body-diode conduction paths
- TO-220 mounted power designs
Procurement Notes
When requesting a quote for IRL520, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the IRL520?
The IRL520 is a Vishay single N-channel power MOSFET in the Power_Management category. The extracted product information lists a TO-220AB package and logic-level gate drive support.
What voltage and current ratings define the IRL520?
The device has a 100 V drain-source absolute maximum rating and a minimum 100 V drain-source breakdown voltage. Continuous drain current is 9.2 A at VGS=5 V and TC=25°C, or 6.5 A at TC=100°C.
What RDS(on) values are specified for the IRL520?
The datasheet facts specify maximum drain-source on-state resistance of 0.27 Ω at VGS=5.0 V and ID=5.5 A, and 0.38 Ω maximum at VGS=4.0 V and ID=4.6 A.
What thermal ratings should be considered for mounting?
Thermal facts include 2.5°C/W maximum junction-to-case resistance, 62°C/W maximum junction-to-ambient resistance, and 0.50°C/W typical case-to-sink resistance on a flat, greased surface.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.