IRL540 N-channel Power MOSFET

Vishay Power_Management — specifications, applications, sourcing support and RFQ.

IRL540 N-channel Power MOSFET

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
IRL540
Manufacturer
Vishay
Package
TO-220AB
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

IRL540 from Vishay is an N-channel Power MOSFET in the Power_Management category, supplied in a TO-220AB package. The device is specified for 100 V drain-source voltage and 28 A continuous drain current at VGS=5 V and TC=25°C, with 20 A at TC=100°C. Key switching and drive parameters include 0.077 ohm maximum RDS(on) at VGS=5.0 V, 64 nC maximum total gate charge, 9.4 nC gate-source charge, and 27 nC gate-drain charge. The datasheet also lists 150 W maximum power dissipation, -55 to +175°C operating and storage temperature range, and avalanche ratings for power switching designs.

Specifications

TypeDescription
Part NumberIRL540
ManufacturerVishay
Product TypeLDO Regulator
CategoryPower Management
Component TypeOther
Package CaseTO-220AB
Drain-Source Voltage100 V
Drain-Source On-State Resistance0.077 ohm max
Total Gate Charge64 nC max
Gate-Source Charge9.4 nC
Gate-Drain Charge27 nC
ConfigurationSingle
PackageTO-220AB
Lead-Free Ordering Part NumberIRL540PbF
Lead-Free and Halogen-Free Ordering Part NumberIRL540PbF-BE3
Drain-Source Voltage Absolute Maximum100 V
Gate-Source Voltage Absolute Maximum+/-10 V
Continuous Drain Current28 A
Continuous Drain Current20 A
Pulsed Drain Current110 A
Linear Derating Factor1.0 W/°C
Single Pulse Avalanche Energy440 mJ
Repetitive Avalanche Current28 A
Repetitive Avalanche Energy15 mJ
Maximum Power Dissipation150 W
Peak Diode Recovery dV/dt5.5 V/ns
Operating Junction and Storage Temperature Range-55 to +175 °C
Soldering Peak Temperature300 °C
Mounting Torque10 lbf-in; 1.1 N-m
Maximum Junction-to-Ambient Thermal Resistance62 °C/W max
Case-to-Sink Thermal Resistance0.50 °C/W typ
Maximum Junction-to-Case Thermal Resistance1.0 °C/W max
Drain-Source Breakdown Voltage100 V min
Drain-Source Breakdown Voltage Temperature Coefficient0.12 V/°C typ
Gate-Source Threshold Voltage1.0 V min, 2.0 V max
Gate-Source Leakage+/-100 nA max
Zero Gate Voltage Drain Current25 uA max
Zero Gate Voltage Drain Current250 uA max
Drain-Source On-State Resistance0.077 ohm max
Drain-Source On-State Resistance0.11 ohm max
Forward Transconductance12 S min
Input Capacitance2200 pF typ
Output Capacitance560 pF typ
Reverse Transfer Capacitance140 pF typ
Total Gate Charge64 nC max
Gate-Source Charge9.4 nC max
Gate-Drain Charge27 nC max
Turn-On Delay Time8.5 ns typ
Rise Time350 ns typ
Turn-Off Delay Time130 ns typ
Fall Time80 ns typ
Internal Drain Inductance4.5 nH typ
Internal Source Inductance7.5 nH typ
Continuous Source-Drain Diode Current28 A max
Pulsed Diode Forward Current110 A max
Body Diode Voltage2.5 V max
Body Diode Reverse Recovery Time200 ns typ, 260 ns max
Body Diode Reverse Recovery Charge1.7 uC typ, 2.90 uC max
Forward Turn-On TimeIntrinsic turn-on time is negligible
Datasheet Statusrequest_only

Product Overview

The Vishay IRL540 is a single N-channel Power MOSFET specified in the TO-220AB package for Power_Management applications. Its headline ratings include 100 V drain-source voltage, 28 A continuous drain current at VGS=5 V and TC=25°C, and 20 A continuous drain current at TC=100°C. Pulsed drain current is rated at 110 A, with pulse width limited by maximum junction temperature.

Conduction performance is defined by 0.077 ohm maximum drain-source on-state resistance at VGS=5.0 V and ID=17 A, and 0.11 ohm maximum at VGS=4.0 V and ID=14 A. Gate-drive data includes 64 nC maximum total gate charge, 9.4 nC maximum gate-source charge, and 27 nC maximum gate-drain charge at ID=28 A, VDS=80 V, and VGS=5.0 V.

Thermal and assembly data include 1.0°C/W maximum junction-to-case thermal resistance, 62°C/W maximum junction-to-ambient thermal resistance, 0.50°C/W typical case-to-sink resistance on a flat greased surface, 300°C soldering peak temperature for 10 s, and 10 lbf-in or 1.1 N-m mounting torque with a 6-32 or M3 screw.

Key Features

  • 100 V drain-source voltage rating
  • 28 A continuous drain current at TC=25°C
  • 20 A continuous drain current at TC=100°C
  • 0.077 ohm maximum RDS(on) at VGS=5.0 V
  • 64 nC maximum total gate charge
  • Single N-channel MOSFET configuration
  • TO-220AB package for through-hole mounting
  • 150 W maximum power dissipation at TC=25°C
  • -55 to +175°C junction and storage range
  • 440 mJ single pulse avalanche energy

Typical Applications

  • Power switching stages
  • Low-voltage gate drive circuits
  • TO-220AB through-hole power assemblies
  • Avalanche-rated switching circuits
  • Body-diode conduction paths
  • 100 V drain-source designs
  • 28 A drain-current designs

Procurement Notes

When requesting a quote for IRL540, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of device is the IRL540?

The IRL540 is a Vishay single N-channel Power MOSFET in the Power_Management category. The extracted datasheet facts list a TO-220AB package, 100 V drain-source rating, and ordering options IRL540PbF and IRL540PbF-BE3.

What is the maximum on-state resistance of IRL540?

The datasheet facts specify 0.077 ohm maximum drain-source on-state resistance at VGS=5.0 V and ID=17 A with pulse width <=300 us and duty cycle <=2%. A 0.11 ohm maximum value is also listed at VGS=4.0 V and ID=14 A.

What current ratings are listed for IRL540?

IRL540 is listed with 28 A continuous drain current at VGS=5 V and TC=25°C, and 20 A at TC=100°C. The pulsed drain current rating is 110 A, limited by maximum junction temperature.

What thermal data is provided for IRL540?

The extracted facts list 1.0°C/W maximum junction-to-case thermal resistance, 62°C/W maximum junction-to-ambient thermal resistance, and 0.50°C/W typical case-to-sink thermal resistance on a flat, greased surface.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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