Specifications
| Type | Description |
|---|---|
| Part Number | IRL620 |
| Manufacturer | Vishay |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | TO-220AB |
| Drain-Source Voltage | 200 V; product summary / absolute maximum rating |
| Drain-Source On-State Resistance | 0.80 Ω max; VGS=5.0 V, ID=3.1 A, TJ=25°C |
| Drain-Source On-State Resistance | 1.0 Ω max; VGS=4.0 V, ID=2.6 A, TJ=25°C |
| Total Gate Charge | 16 nC max; ID=5.2 A, VDS=160 V, VGS=5.0 V |
| Gate-Source Charge | 2.7 nC max; ID=5.2 A, VDS=160 V, VGS=5.0 V |
| Gate-Drain Charge | 9.6 nC max; ID=5.2 A, VDS=160 V, VGS=5.0 V |
| Configuration | Single; product summary |
| Gate-Source Voltage | ±10 V; absolute maximum rating, TC=25°C |
| Continuous Drain Current | 5.2 A; VGS=5 V, TC=25°C |
| Continuous Drain Current | 3.3 A; VGS=5 V, TC=100°C |
| Pulsed Drain Current | 21 A; repetitive rating, pulse width limited by maximum junction temperature |
| Linear Derating Factor | 0.40 W/°C; absolute maximum rating |
| Single Pulse Avalanche Energy | 125 mJ; VDD=50 V, starting TJ=25°C, L=6.9 mH, Rg=25 Ω, IAS=5.2 A |
| Repetitive Avalanche Current | 5.2 A; repetitive rating, pulse width limited by maximum junction temperature |
| Repetitive Avalanche Energy | 5.0 mJ; repetitive rating, pulse width limited by maximum junction temperature |
| Maximum Power Dissipation | 50 W; TC=25°C |
| Peak Diode Recovery dV/dt | 5.0 V/ns; ISD≤5.2 A, dI/dt≤120 A/µs, VDD≤VDS, TJ≤150°C |
| Operating Junction and Storage Temperature Range | -55 to +150°C; absolute maximum rating |
| Soldering Peak Temperature | 300°C; for 10 s, 1.6 mm from case |
| Mounting Torque | 10 lbf·in / 1.1 N·m; 6-32 or M3 screw |
| Maximum Junction-to-Ambient Thermal Resistance | 62°C/W max; thermal resistance rating |
| Case-to-Sink Thermal Resistance | 0.50°C/W typ; flat, greased surface |
| Maximum Junction-to-Case Thermal Resistance | 2.5°C/W max; drain |
| Drain-Source Breakdown Voltage | 200 V min; VGS=0 V, ID=250 µA, TJ=25°C |
| Drain-Source Breakdown Voltage Temperature Coefficient | 0.27 V/°C typ; reference to 25°C, ID=1 mA |
| Gate-Source Threshold Voltage | 1.0 V min, 2.0 V max; VDS=VGS, ID=250 µA, TJ=25°C |
| Gate-Source Leakage | ±100 nA max; VGS=±10 V, TJ=25°C |
| Zero Gate Voltage Drain Current | 25 µA max; VDS=200 V, VGS=0 V, TJ=25°C |
| Zero Gate Voltage Drain Current | 250 µA max; VDS=160 V, VGS=0 V, TJ=125°C |
| Forward Transconductance | 1.2 S min; VDS=50 V, ID=3.1 A, pulse width≤300 µs, duty cycle≤2% |
| Input Capacitance | 360 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Output Capacitance | 91 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Reverse Transfer Capacitance | 27 pF typ; VGS=0 V, VDS=25 V, f=1.0 MHz |
| Turn-On Delay Time | 4.2 ns typ; VDD=100 V, ID=9.0 A, Rg=6.0 Ω, RD=11 Ω |
| Rise Time | 31 ns typ; VDD=100 V, ID=9.0 A, Rg=6.0 Ω, RD=11 Ω |
| Turn-Off Delay Time | 18 ns typ; VDD=100 V, ID=9.0 A, Rg=6.0 Ω, RD=11 Ω |
| Fall Time | 17 ns typ; VDD=100 V, ID=9.0 A, Rg=6.0 Ω, RD=11 Ω |
| Internal Drain Inductance | 4.5 nH typ; between lead 6 mm from package and center of die contact |
| Internal Source Inductance | 7.5 nH typ; between lead 6 mm from package and center of die contact |
| Continuous Source-Drain Diode Current | 5.2 A max; integral reverse p-n junction diode |
| Pulsed Diode Forward Current | 21 A max; repetitive rating, pulse width limited by maximum junction temperature |
| Body Diode Voltage | 1.8 V max; TJ=25°C, IS=5.2 A, VGS=0 V, pulse width≤300 µs, duty cycle≤2% |
| Body Diode Reverse Recovery Time | 180 ns typ, 270 ns max; TJ=25°C, IF=5.2 A, dI/dt=100 A/µs, pulse width≤300 µs, duty cycle≤2% |
| Body Diode Reverse Recovery Charge | 1.1 µC typ, 1.7 µC max; TJ=25°C, IF=5.2 A, dI/dt=100 A/µs, pulse width≤300 µs, duty cycle≤2% |
| Forward Turn-On Time | Intrinsic turn-on time is negligible; turn-on dominated by LS and LD |
| Ordering Part Number | IRL620PbF; lead (Pb)-free version |
| Ordering Part Number | IRL620PbF-BE3; lead (Pb)-free and halogen-free version |
| Datasheet Status | request_only |
Product Overview
The Vishay IRL620 is a single N-channel power MOSFET categorized for Power_Management use and supplied in a TO-220AB package. The device is rated for 200 V drain-source voltage, with a 200 V minimum drain-source breakdown voltage measured at VGS=0 V, ID=250 µA, and TJ=25°C.
Conduction ratings include 5.2 A continuous drain current at VGS=5 V and TC=25°C, 3.3 A at TC=100°C, and 21 A pulsed drain current under the repetitive pulse rating. On-state resistance is specified at 0.80 Ω max with VGS=5.0 V and ID=3.1 A, and 1.0 Ω max with VGS=4.0 V and ID=2.6 A.
Switching and drive parameters include 16 nC maximum total gate charge, 2.7 nC maximum gate-source charge, and 9.6 nC maximum gate-drain charge at ID=5.2 A, VDS=160 V, and VGS=5.0 V. Thermal and assembly data include 50 W maximum dissipation at TC=25°C, 2.5°C/W maximum junction-to-case thermal resistance, 300°C peak soldering temperature for 10 s at 1.6 mm from the case, and 10 lbf·in / 1.1 N·m mounting torque for a 6-32 or M3 screw.
Key Features
- 200 V drain-source voltage rating
- Single N-channel MOSFET configuration
- TO-220AB package case
- 5.2 A continuous drain current at TC=25°C
- 0.80 Ω maximum on-resistance at VGS=5.0 V
- 16 nC maximum total gate charge
- 50 W maximum power dissipation at TC=25°C
- 125 mJ single pulse avalanche energy rating
- -55 to +150°C junction and storage range
- 2.5°C/W maximum junction-to-case thermal resistance
Typical Applications
- Power switching circuits
- MOSFET gate-drive evaluation
- Inductive load switching
- Avalanche-rated switching stages
- TO-220 through-hole power designs
- Body-diode conduction paths
- Thermally managed power assemblies
Procurement Notes
When requesting a quote for IRL620, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of MOSFET is the IRL620?
The IRL620 is specified as a Vishay single N-channel power MOSFET. It is listed under Power_Management and uses a TO-220AB package case.
What voltage and current ratings define the IRL620?
The IRL620 has a 200 V drain-source voltage rating. Continuous drain current is 5.2 A at VGS=5 V and TC=25°C, or 3.3 A at TC=100°C.
What on-resistance values are specified for the IRL620?
Drain-source on-state resistance is 0.80 Ω maximum at VGS=5.0 V, ID=3.1 A, and TJ=25°C. It is also specified as 1.0 Ω maximum at VGS=4.0 V and ID=2.6 A.
Which ordering part numbers are listed for IRL620 versions?
The datasheet facts list IRL620PbF as the lead-free version and IRL620PbF-BE3 as the lead-free and halogen-free version.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.