IRL640 N-channel Power MOSFET

Vishay Power_Management — specifications, applications, sourcing support and RFQ.

IRL640 N-channel Power MOSFET

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Part Number
IRL640
Manufacturer
Vishay
Package
TO-220AB
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

IRL640 from Vishay is an N-channel power MOSFET in the Power_Management category, supplied in a TO-220AB package. The device is specified for 200 V maximum drain-source voltage and 17 A continuous drain current at VGS=5 V and TC=25°C, derating to 11 A at TC=100°C. Key power limits include 125 W maximum dissipation, 68 A pulsed drain current, and -55 to +150°C operating junction range. Switching and drive data include 0.18 Ω maximum RDS(on) at VGS=5.0 V, 66 nC maximum total gate charge, and typical turn-on delay of 8.0 ns. Applications align with 200 V power switching, logic-level gate drive operation, and circuits using the integral body diode.

Specifications

TypeDescription
Part NumberIRL640
ManufacturerVishay
Product TypeLDO Regulator
CategoryPower Management
Package / CaseTO-220AB
ConfigurationSingle; condition: Product summary; source page: 1
Drain-Source Voltage200 V max; condition: Absolute maximum rating, TC=25°C; source page: 1
Gate-Source Voltage±10 V max; condition: Absolute maximum rating, TC=25°C; source page: 1
Continuous Drain Current17 A max; condition: VGS=5 V, TC=25°C; source page: 1
Continuous Drain Current11 A max; condition: VGS=5 V, TC=100°C; source page: 1
Pulsed Drain Current68 A max; condition: Pulse width limited by maximum junction temperature; source page: 1
Linear Derating Factor1.0 W/°C; condition: Absolute maximum rating; source page: 1
Single Pulse Avalanche Energy580 mJ max; condition: VDD=50 V, starting TJ=25°C, L=3.0 mH, Rg=25 Ω, IAS=17 A; source page: 1
Repetitive Avalanche Current10 A max; condition: Repetitive rating, pulse width limited by maximum junction temperature; source page: 1
Repetitive Avalanche Energy13 mJ max; condition: Repetitive rating, pulse width limited by maximum junction temperature; source page: 1
Maximum Power Dissipation125 W max; condition: TC=25°C; source page: 1
Peak Diode Recovery dV/dt5.0 V/ns max; condition: ISD≤17 A, dI/dt≤150 A/μs, VDD≤VDS, TJ≤150°C; source page: 1
Operating Junction Temperature Range-55 to +150 °C; condition: Absolute maximum rating; source page: 1
Storage Temperature Range-55 to +150 °C; condition: Absolute maximum rating; source page: 1
Soldering Peak Temperature300 °C max; condition: For 10 s, 1.6 mm from case; source page: 1
Mounting Torque10 lbf·in / 1.1 N·m; condition: 6-32 or M3 screw; source page: 1
Maximum Junction-to-Ambient Thermal Resistance62 °C/W max; condition: Thermal resistance rating; source page: 2
Case-to-Sink Thermal Resistance0.50 °C/W typ; condition: Flat, greased surface; source page: 2
Maximum Junction-to-Case Thermal Resistance1.0 °C/W max; condition: Drain; source page: 2
Drain-Source Breakdown Voltage200 V min; condition: VGS=0 V, ID=250 μA, TJ=25°C; source page: 2
Drain-Source Breakdown Voltage Temperature Coefficient0.27 V/°C typ; condition: Reference to 25°C, ID=1 mA; source page: 2
Gate-Source Threshold Voltage1.0 V min, 2.0 V max; condition: VDS=VGS, ID=250 μA, TJ=25°C; source page: 2
Gate-Source Leakage±100 nA max; condition: VGS=±10 V; source page: 2
Zero Gate Voltage Drain Current25 μA max; condition: VDS=200 V, VGS=0 V; source page: 2
Zero Gate Voltage Drain Current250 μA max; condition: VDS=160 V, VGS=0 V, TJ=125°C; source page: 2
Drain-Source On-State Resistance0.18 Ω max; condition: VGS=5.0 V, ID=10 A, pulse width≤300 μs, duty cycle≤2%; source page: 2
Drain-Source On-State Resistance0.27 Ω max; condition: VGS=4.0 V, ID=8.5 A, pulse width≤300 μs, duty cycle≤2%; source page: 2
Forward Transconductance16 S min; condition: VDS=50 V, ID=10 A, pulse width≤300 μs, duty cycle≤2%; source page: 2
Input Capacitance1800 pF typ; condition: VGS=0 V, VDS=25 V, f=1.0 MHz; source page: 2
Output Capacitance400 pF typ; condition: VGS=0 V, VDS=25 V, f=1.0 MHz; source page: 2
Reverse Transfer Capacitance120 pF typ; condition: VGS=0 V, VDS=25 V, f=1.0 MHz; source page: 2
Total Gate Charge66 nC max; condition: ID=17 A, VDS=160 V, VGS=5.0 V; source page: 2
Gate-Source Charge9.0 nC max; condition: ID=17 A, VDS=160 V, VGS=5.0 V; source page: 2
Gate-Drain Charge38 nC max; condition: ID=17 A, VDS=160 V, VGS=5.0 V; source page: 2
Turn-On Delay Time8.0 ns typ; condition: VDD=100 V, ID=17 A, Rg=4.6 Ω, RD=5.7 Ω; source page: 2
Rise Time84 ns typ; condition: VDD=100 V, ID=17 A, Rg=4.6 Ω, RD=5.7 Ω; source page: 2
Turn-Off Delay Time34 ns typ; condition: VDD=100 V, ID=17 A, Rg=4.6 Ω, RD=5.7 Ω; source page: 2
Fall Time52 ns typ; condition: VDD=100 V, ID=17 A, Rg=4.6 Ω, RD=5.7 Ω; source page: 2
Internal Drain Inductance4.5 nH typ; condition: Between lead 6 mm (0.25 in) from package and center of die contact; source page: 2
Internal Source Inductance7.5 nH typ; condition: Between lead 6 mm (0.25 in) from package and center of die contact; source page: 2
Gate Input Resistance0.3 Ω min, 1.2 Ω max; condition: f=1 MHz, open drain; source page: 2
Continuous Source-Drain Diode Current17 A max; condition: MOSFET integral reverse p-n junction diode; source page: 2
Pulsed Diode Forward Current68 A max; condition: Pulse width limited by maximum junction temperature; source page: 2
Body Diode Voltage2.0 V max; condition: TJ=25°C, IS=17 A, VGS=0 V; source page: 2
Body Diode Reverse Recovery Time310 ns typ, 470 ns max; condition: TJ=25°C, IF=17 A, dI/dt=100 A/μs; source page: 2
Body Diode Reverse Recovery Charge3.2 μC typ, 4.8 μC max; condition: TJ=25°C, IF=17 A, dI/dt=100 A/μs; source page: 2
Forward Turn-On TimeIntrinsic turn-on time is negligible; condition: Turn-on dominated by LS and LD; source page: 2
Ordering Part NumberIRL640PbF; condition: Lead (Pb)-free ordering option; source page: 1
Ordering Part NumberIRL640PbF-BE3; condition: Lead (Pb)-free and halogen-free ordering option; source page: 1
Datasheet Statusrequest_only

Product Overview

The Vishay IRL640 is a single N-channel power MOSFET categorized under Power_Management and packaged in TO-220AB. Its absolute maximum ratings include 200 V drain-source voltage, ±10 V gate-source voltage, 17 A continuous drain current at VGS=5 V and TC=25°C, and 125 W maximum power dissipation at TC=25°C.

Electrical parameters define operation at low gate drive voltages. The MOSFET has 1.0 V minimum and 2.0 V maximum gate-source threshold voltage, with drain-source on-state resistance specified at 0.18 Ω maximum for VGS=5.0 V and ID=10 A, and 0.27 Ω maximum for VGS=4.0 V and ID=8.5 A. Dynamic values include 1800 pF typical input capacitance, 66 nC maximum total gate charge, and typical switching times of 8.0 ns turn-on delay, 84 ns rise, 34 ns turn-off delay, and 52 ns fall.

Thermal and assembly data include 1.0°C/W maximum junction-to-case thermal resistance, 62°C/W maximum junction-to-ambient thermal resistance, 300°C maximum soldering peak temperature for 10 s, and 10 lbf·in / 1.1 N·m mounting torque for 6-32 or M3 hardware. The integral reverse p-n junction diode is rated for 17 A continuous source-drain current and 68 A pulsed diode current.

Key Features

  • 200 V maximum drain-source voltage rating
  • 17 A continuous drain current at VGS=5 V
  • 0.18 Ω maximum RDS(on) at VGS=5.0 V
  • TO-220AB package with single MOSFET configuration
  • 125 W maximum power dissipation at TC=25°C
  • 66 nC maximum total gate charge at 5 V drive
  • Integral reverse p-n junction diode rated 17 A
  • 580 mJ maximum single pulse avalanche energy
  • -55 to +150°C operating junction temperature range
  • Lead-free and halogen-free ordering options listed

Typical Applications

  • 200 V power switching stages
  • Logic-level gate drive circuits
  • TO-220AB mounted power assemblies
  • Avalanche-rated switching circuits
  • Designs using integral body diode
  • Thermally managed drain power paths

Procurement Notes

When requesting a quote for IRL640, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of device is the Vishay IRL640?

IRL640 is specified as a single N-channel power MOSFET from Vishay. It belongs to the Power_Management category and is supplied in a TO-220AB package according to the extracted product and package facts.

What are the main voltage and current ratings?

The drain-source voltage is rated 200 V maximum at TC=25°C. Continuous drain current is 17 A maximum at VGS=5 V and TC=25°C, and 11 A maximum at VGS=5 V and TC=100°C.

What on-resistance is specified for low gate drive?

Drain-source on-state resistance is specified as 0.18 Ω maximum at VGS=5.0 V and ID=10 A. A second condition gives 0.27 Ω maximum at VGS=4.0 V and ID=8.5 A.

What thermal limits should be considered for IRL640?

The device has 125 W maximum power dissipation at TC=25°C, 1.0°C/W maximum junction-to-case thermal resistance, and 62°C/W maximum junction-to-ambient thermal resistance. The operating junction temperature range is -55 to +150°C.

Does IRL640 include body diode specifications?

Yes. The integral reverse p-n junction diode is rated for 17 A continuous source-drain current and 68 A pulsed diode forward current. Body diode voltage is 2.0 V maximum at TJ=25°C, IS=17 A, and VGS=0 V.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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