LM5022 Low-Side Boost SEPIC Controller

Texas Instruments Power_Management — specifications, applications, sourcing support and RFQ.

LM5022 Low-Side Boost SEPIC Controller

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Part Number
LM5022
Manufacturer
Texas Instruments
Package
10-pin VSSOP (DGS), 3.00 mm x 3.00 mm nominal body
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

LM5022 from Texas Instruments is a Power_Management low-side boost/SEPIC controller supplied in a 10-pin VSSOP (DGS) package with a 3.00 mm x 3.00 mm nominal body. It controls a low-side N-channel MOSFET for boost and SEPIC regulators. The device supports a 6 V to 60 V startup regulator operating range and can operate down to 3 V after startup. Key parameters include a 1 A MOSFET gate driver, up to 2.2 MHz oscillator capability, less than 100 ns total propagation delay, 90% duty-cycle feature limit, 1.25 V feedback reference, cycle-by-cycle current limit threshold of 0.5 V typical, and recommended junction temperature from -40 °C to 125 °C.

Specifications

TypeDescription
Part NumberLM5022
ManufacturerTexas Instruments
Product TypeLDO Regulator
CategoryPower Management
Package / Case10-pin VSSOP (DGS), 3.00 mm x 3.00 mm nominal body
Controller topologyLow-side N-channel MOSFET controller; For boost and SEPIC regulators
Input voltage range6 V to 60 V; Startup regulator operating range
Post-startup minimum operating input voltageDown to 3 V; After start-up
Internal startup regulator voltage rating60 V; Internal start-up regulator
MOSFET gate driver peak current1 A; OUT pin gate driver capability
Duty cycle limit90%; Feature list
Oscillator frequency rangeUp to 2.2 MHz; PWM controller high-speed capability
Propagation delayLess than 100 ns; Total propagation delays
Feedback reference voltage1.25 V; Non-inverting input of error amplifier
VIN absolute maximum voltage-0.3 V to 65 V; VIN to GND
VCC absolute maximum voltage-0.3 V to 16 V; VCC to GND
RT/SYNC absolute maximum voltage-0.3 V to 5.5 V; RT/SYNC to GND
OUT absolute maximum negative voltage-1.5 V; OUT to GND, for less than 100 ns
All other pins absolute maximum voltage-0.3 V to 7 V; Pins to GND
Junction temperature absolute maximum150 °C; TJ
Storage temperature range-65 °C to 150 °C; Tstg
HBM ESD rating±2000 V; ANSI/ESDA/JEDEC JS-001
CDM ESD rating±750 V; JEDEC JESD22-C101
Recommended supply voltage6 V to 60 V; Operating free-air temperature range
External VCC voltage7.5 V to 14 V; Recommended operating condition
Recommended junction temperature-40 °C to 125 °C; Recommended operating condition
Junction-to-ambient thermal resistance161.5 °C/W; DGS VSSOP, 10 pins
Junction-to-case top thermal resistance56 °C/W; DGS VSSOP, 10 pins
Junction-to-board thermal resistance81.3 °C/W; DGS VSSOP, 10 pins
Junction-to-top characterization parameter5.7 °C/W; DGS VSSOP, 10 pins
Junction-to-board characterization parameter80 °C/W; DGS VSSOP, 10 pins
FB pin voltage1.225 V min, 1.25 V typ, 1.275 V max; TJ=-40 °C to 125 °C, VIN=24 V, RT=27.4 kΩ unless otherwise noted
VCC regulation6.6 V min, 7 V typ, 7.4 V max; 10 V ≤ VIN ≤ 60 V, ICC=1 mA
VCC regulation at low VIN5 V; 6 V ≤ VIN < 10 V, VCC pin open circuit
Supply current3.5 mA typ, 4 mA max; OUT pin capacitance=0, VCC=10 V
VCC current limit15 mA min, 35 mA typ; VCC=0 V
Dropout voltage across bypass switch200 mV typ; ICC=0 mA, fSW<200 kHz, 6 V ≤ VIN ≤ 8.5 V
Bypass switch turnoff threshold8.7 V typ; VIN increasing
Bypass switch threshold hysteresis260 mV typ; VIN decreasing
VCC pin output impedance58 Ω typ; VIN=6 V, 0 mA ≤ ICC ≤ 5 mA
VCC pin output impedance53 Ω typ; VIN=8 V, 0 mA ≤ ICC ≤ 5 mA
VCC pin output impedance1.6 Ω typ; VIN=24 V, 0 mA ≤ ICC ≤ 5 mA
VCC pin UVLO rising threshold5 V typ; VCC-HI
VCC pin UVLO falling hysteresis300 mV typ; VCC-HYS
Startup regulator leakage150 µA typ, 500 µA max; VIN=60 V
Shutdown current350 µA typ, 450 µA max; UVLO=0 V, VCC=open circuit
Error amplifier gain bandwidth4 MHz typ; GBW
Error amplifier DC gain75 dB typ; ADC
COMP pin current sink capability5 mA min, 17 mA typ; VFB=1.5 V, VCOMP=1 V
UVLO shutdown threshold1.22 V min, 1.25 V typ, 1.28 V max; VSD
UVLO shutdown hysteresis current source16 µA min, 20 µA typ, 24 µA max; ISD-HYS
Current limit delay to output30 ns typ; CS steps from 0 V to 0.6 V, OUT transitions to 90% of VCC
Current limit threshold voltage0.45 V min, 0.5 V typ, 0.55 V max; VCS
Leading edge blanking time65 ns typ; tBLK
CS pin sink impedance40 Ω typ, 75 Ω max; Blanking active
Soft-start current source7 µA min, 10 µA typ, 13 µA max; ISS
Soft-start to COMP offset0.35 V min, 0.55 V typ, 0.75 V max; VSS-OFF
Oscillator frequency170 kHz min, 200 kHz typ, 230 kHz max; RT to GND=84.5 kΩ
Oscillator frequency525 kHz min, 600 kHz typ, 675 kHz max; RT to GND=27.4 kΩ
Oscillator frequency865 kHz min, 990 kHz typ, 1115 kHz max; RT to GND=16.2 kΩ
Synchronization rising threshold3.8 V typ; VSYNC-HI
COMP to OUT transition delay25 ns typ; VCOMP=2 V, CS stepped from 0 V to 0.4 V
Minimum duty cycle0%; VCOMP=0 V
Maximum duty cycle90% min, 95% max; DMAX
COMP to PWM comparator gain0.33 V/V typ; APWM
COMP pin open-circuit voltage4.3 V min, 5.2 V typ, 6.1 V max; VFB=0 V
COMP pin short-circuit current0.6 mA min, 1.1 mA typ, 1.5 mA max; VCOMP=0 V, VFB=1.5 V
Slope compensation amplitude83 mV min, 110 mV typ, 137 mV max; VSLOPE
Output high saturation voltage0.25 V typ, 0.75 V max; VCC - VOUT, IOUT=50 mA
Output low saturation voltage0.25 V typ, 0.75 V max; VOUT, IOUT=100 mA
OUT pin rise time18 ns typ; OUT pin load=1 nF
OUT pin fall time15 ns typ; OUT pin load=1 nF
Thermal shutdown threshold165 °C typ; TSD
Thermal shutdown hysteresis25 °C typ; TSD-HYS
Datasheet Statusrequest_only

Product Overview

The controller integrates a 1 A peak MOSFET gate driver, a PWM oscillator capable of operation up to 2.2 MHz, and total propagation delay below 100 ns. Control-loop parameters include a 1.25 V feedback reference, 4 MHz typical error-amplifier gain bandwidth, 75 dB typical DC gain, soft-start current source, slope compensation, leading-edge blanking, UVLO, and thermal shutdown.

Key Features

  • Low-side N-channel MOSFET controller for boost and SEPIC regulators
  • 6 V to 60 V startup regulator operating range
  • Operates down to 3 V after startup
  • 1 A peak MOSFET gate driver capability
  • Oscillator frequency capability up to 2.2 MHz
  • Less than 100 ns total propagation delay
  • 1.25 V feedback reference at error amplifier
  • Current-limit threshold is 0.5 V typical
  • Leading-edge blanking time is 65 ns typical
  • Thermal shutdown threshold is 165 °C typical

Typical Applications

  • Boost regulator control
  • SEPIC regulator control
  • Low-side N-channel MOSFET power stages
  • Wide-input power management designs
  • Externally driven switching converters
  • Synchronized PWM controller circuits

Procurement Notes

When requesting a quote for LM5022, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of controller is the LM5022?

The LM5022 is a Texas Instruments low-side boost/SEPIC controller. It is specified as a low-side N-channel MOSFET controller for boost and SEPIC regulators.

What input voltage range does the LM5022 support?

The startup regulator operating range is 6 V to 60 V. After startup, the device can operate with input voltage down to 3 V, according to the extracted datasheet facts.

What package is used for the LM5022?

The listed package is a 10-pin VSSOP with DGS package code. The nominal body size is 3.00 mm x 3.00 mm.

What are key switching and driver parameters?

The LM5022 includes a 1 A peak MOSFET gate driver, oscillator capability up to 2.2 MHz, less than 100 ns total propagation delay, and a maximum duty-cycle specification of 90% minimum to 95% maximum.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: June 30, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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