Specifications
| Type | Description |
|---|---|
| Part Number | LM5113 |
| Manufacturer | Texas Instruments |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | WSON-10 4.00 mm x 4.00 mm; DSBGA-12 2.00 mm x 2.00 mm |
| Driver Configuration | Half bridge high-side and low-side driver; for enhancement mode GaN FETs |
| High-Side Floating Bias Rail Operating Voltage | Up to 100 VDC; high-side floating bias voltage rail |
| Peak Source Current | 1.2 A; HOH, LOH = 0 V |
| Peak Sink Current | 5 A; HOL, LOL = 5 V |
| Pull-Down Resistance | 0.6 ohm; gate driver output |
| Pull-Up Resistance | 2.1 ohm; gate driver output |
| Propagation Delay | 28 ns typ; typical propagation time |
| Propagation Delay Matching | 1.5 ns typ; typical propagation delay matching |
| VDD to VSS Absolute Maximum | -0.3 to 7 V; absolute maximum rating |
| HB to HS Absolute Maximum | -0.3 to 7 V; absolute maximum rating |
| LI or HI Input Absolute Maximum | -0.3 to 15 V; absolute maximum rating |
| LOH, LOL Output Absolute Maximum | -0.3 to VDD + 0.3 V; absolute maximum rating |
| HOH, HOL Output Absolute Maximum | VHS - 0.3 to VHB + 0.3 V; absolute maximum rating |
| HS to VSS Absolute Maximum | -5 to 93 V; absolute maximum rating |
| HB to VSS Absolute Maximum | 0 to VHS + 7 V; absolute maximum rating |
| Operating Junction Temperature Absolute Maximum | 150 °C; absolute maximum rating |
| Storage Temperature | -55 to 150 °C; Tstg |
| ESD Rating HBM | ±2000 V; human-body model, ANSI/ESDA/JEDEC JS-001 |
| ESD Rating CDM | ±1000 V; charged-device model, JEDEC JESD22-C101 |
| Recommended VDD | 4.5 to 5.5 V; recommended operating condition |
| Recommended LI or HI Input Voltage | 0 to 14 V; recommended operating condition |
| Recommended HS Voltage | -5 to 90 V; recommended operating condition |
| Recommended HB Voltage | VHS + 4 to VHS + 5.5 V; recommended operating condition |
| HS Slew Rate | 50 V/ns; recommended operating condition |
| Operating Junction Temperature | -40 to 125 °C; recommended operating condition |
| Junction-to-Ambient Thermal Resistance, DPR WSON-10 | 37.5 °C/W |
| Junction-to-Ambient Thermal Resistance, YFX DSBGA-12 | 76.8 °C/W |
| Junction-to-Case Top Thermal Resistance, DPR WSON-10 | 35.8 °C/W |
| Junction-to-Case Top Thermal Resistance, YFX DSBGA-12 | 0.6 °C/W |
| Junction-to-Board Thermal Resistance, DPR WSON-10 | 14.7 °C/W |
| Junction-to-Board Thermal Resistance, YFX DSBGA-12 | 12.0 °C/W |
| Junction-to-Case Bottom Thermal Resistance, DPR WSON-10 | 4.1 °C/W |
| VDD Quiescent Current | 0.07 mA typ, 0.1 mA max; LI = HI = 0 V |
| VDD Operating Current | 2.0 mA typ, 3.0 mA max; f = 500 kHz |
| Total HB Quiescent Current | 0.08 mA typ, 0.1 mA max; LI = HI = 0 V |
| Total HB Operating Current | 1.5 mA typ, 2.5 mA max; f = 500 kHz |
| HB to VSS Quiescent Current | 0.1 µA typ, 8 µA max; HS = HB = 100 V |
| HB to VSS Operating Current | 0.4 mA typ, 1.0 mA max; f = 500 kHz |
| Input Voltage Threshold Rising Edge | 1.89 V min, 2.06 V typ, 2.18 V max |
| Input Voltage Threshold Falling Edge | 1.48 V min, 1.66 V typ, 1.76 V max |
| Input Voltage Hysteresis | 400 mV typ; input pins |
| Input Pulldown Resistance | 100 kΩ min, 200 kΩ typ, 300 kΩ max |
| VDD Rising UVLO Threshold | 3.2 V min, 3.8 V typ, 4.5 V max |
| VDD UVLO Threshold Hysteresis | 0.2 V typ; undervoltage protection |
| HB Rising UVLO Threshold | 2.5 V min, 3.2 V typ, 3.9 V max |
| HB UVLO Threshold Hysteresis | 0.2 V typ; undervoltage protection |
| Bootstrap Diode Low-Current Forward Voltage | 0.45 V typ, 0.65 V max; IVDD-HB = 100 µA |
| Bootstrap Diode High-Current Forward Voltage | 0.90 V typ, 1.00 V max; IVDD-HB = 100 mA |
| Bootstrap Diode Dynamic Resistance | 1.85 ohm typ, 3.60 ohm max; IVDD-HB = 100 mA |
| HB-HS Clamp Regulation Voltage | 4.7 V min, 5.2 V typ, 5.45 V max |
| Low-Level Output Voltage | 0.06 V typ, 0.10 V max; IHOL = ILOL = 100 mA |
| High-Level Output Voltage Drop | 0.21 V typ, 0.31 V max; IHOH = ILOH = 100 mA |
| Datasheet Status | request_only |
Product Overview
The LM5113 is a Texas Instruments half bridge high-side and low-side driver intended for enhancement-mode GaN FETs. Its high-side floating bias rail supports operation up to 100 VDC, with recommended HS operation from -5 to 90 V and HB operation from VHS + 4 V to VHS + 5.5 V.
Gate-drive capability is defined by 1.2 A peak source current and 5 A peak sink current. The driver output resistance is 2.1 ohm pull-up and 0.6 ohm pull-down, with 28 ns typical propagation delay and 1.5 ns typical propagation-delay matching. Input thresholds are specified with 400 mV typical hysteresis and 100 kΩ to 300 kΩ input pulldown resistance.
The device is offered in WSON-10 4.00 mm x 4.00 mm and DSBGA-12 2.00 mm x 2.00 mm packages. Thermal data includes 37.5 °C/W junction-to-ambient resistance for DPR WSON-10 and 76.8 °C/W for YFX DSBGA-12. Recommended operating junction temperature is -40 to 125 °C, with storage from -55 to 150 °C.
Key Features
- Half bridge high-side and low-side driver for GaN FETs
- High-side floating bias rail operates up to 100 VDC
- 1.2 A peak source current at HOH and LOH
- 5 A peak sink current at HOL and LOL
- 0.6 ohm pull-down and 2.1 ohm pull-up outputs
- 28 ns typical propagation delay
- 1.5 ns typical propagation delay matching
- Recommended VDD range is 4.5 to 5.5 V
- Recommended HS voltage range is -5 to 90 V
- 50 V/ns HS slew-rate recommended operating condition
- Integrated bootstrap diode with specified forward voltage
- HB-HS clamp regulation voltage is 5.2 V typical
Typical Applications
- Enhancement-mode GaN FET half bridges
- High-side and low-side gate drive
- 100 V floating-bias power stages
- Fast-switching GaN power converters
- 500 kHz operating-current designs
- Compact WSON-10 driver layouts
- Compact DSBGA-12 driver layouts
Procurement Notes
When requesting a quote for LM5113, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the LM5113?
The LM5113 is a Texas Instruments half bridge GaN driver. It provides high-side and low-side gate-drive outputs for enhancement-mode GaN FETs and supports a high-side floating bias rail operating up to 100 VDC.
What gate-drive current does the LM5113 provide?
The extracted datasheet parameters list 1.2 A peak source current with HOH and LOH at 0 V, and 5 A peak sink current with HOL and LOL at 5 V. Output resistance is 2.1 ohm pull-up and 0.6 ohm pull-down.
What supply range is recommended for VDD?
The recommended VDD operating range is 4.5 to 5.5 V. Absolute maximum ratings list VDD to VSS from -0.3 to 7 V, so application operation should follow the recommended range rather than the absolute maximum limit.
Which package options are listed for LM5113?
The listed package options are WSON-10 measuring 4.00 mm x 4.00 mm and DSBGA-12 measuring 2.00 mm x 2.00 mm. Thermal resistance values are specified separately for the DPR WSON-10 and YFX DSBGA-12 packages.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.