Specifications
| Type | Description |
|---|---|
| Part Number | LMG3410R070 |
| Manufacturer | Texas Instruments |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | RWH QFN-32, 8.00 mm x 8.00 mm nominal body |
| Component Type | Power_IC |
| Drain-Source Voltage Absolute Maximum | 600 V; Absolute maximum rating over operating free-air temperature range |
| Transient Drain-Source Voltage Absolute Maximum | 800 V; <1% duty cycle, <1 us, for 1M pulses |
| Supply Voltage Absolute Maximum | -0.3 to 20 V; Absolute maximum rating over operating free-air temperature range |
| Pulsed Drain-Source Current Absolute Maximum | 100 A; Pulse current <100 ns |
| Continuous Drain Current Absolute Maximum | 40 A; Tj=25°C; drain current of GaN transistor only |
| Continuous Drain Current Absolute Maximum | 30 A; Tj=100°C; drain current of GaN transistor only |
| IN and LPM Pin Voltage Absolute Maximum | -0.3 to 5.5 V; Absolute maximum rating over operating free-air temperature range |
| FAULT Pin Voltage Absolute Maximum | -0.3 to 5.5 V; Absolute maximum rating over operating free-air temperature range |
| Storage Temperature | -55 to 150 °C; Absolute maximum rating |
| Operating Junction Temperature Absolute Maximum | -40 to 150 °C; Absolute maximum rating |
| ESD Rating HBM | ±1000 V; Human body model per ANSI/ESDA/JEDEC JS-001, all pins |
| ESD Rating CDM | ±250 V; Charged device model per JEDEC JESD22-C101, all pins |
| Recommended Drain-Source Voltage | 480 V max; Recommended operating conditions |
| Recommended Supply Voltage | 9.5 V min, 12 V nom, 18 V max; Recommended operating conditions |
| Recommended DC Drain-Source Current | 12 A; Tj=125°C |
| Recommended IN and LPM Pin Voltage | 5 V max; Recommended operating conditions |
| LDO External Load Current | 5 mA max; Recommended operating conditions |
| Slew Rate Control Resistor | 15 to 150 kΩ; Recommended operating conditions |
| DC-DC Buck-Boost Converter Output Inductor | 22 µH; Recommended operating conditions |
| DC-DC Buck-Boost Converter Output Capacitor | 2.2 µF; Recommended operating conditions |
| Recommended Operating Junction Temperature | -40 to 125 °C; Recommended operating conditions |
| Junction-to-Ambient Thermal Resistance | 57 °C/W; LMG3410R070, RWH QFN-32 package |
| Junction-to-Case Top Thermal Resistance | 5.3 °C/W; LMG3410R070, RWH QFN-32 package |
| Junction-to-Case Bottom Thermal Resistance | 0.5 °C/W; LMG3410R070, RWH QFN-32 package |
| On-State Resistance | 70 mΩ typ; Tj=25°C |
| On-State Resistance | 110 mΩ typ; Tj=125°C |
| Third-Quadrant Source-Drain Voltage | 5 V typ; IN=0 V, ISD=0.1 A |
| Third-Quadrant Source-Drain Voltage | 7.8 V typ; IN=0 V, ISD=10 A |
| Drain Leakage Current | 1 µA typ; VDS=600 V, Tj=25°C |
| Drain Leakage Current | 10 µA typ; VDS=600 V, Tj=125°C |
| GaN Output Capacitance | 71 pF typ; IN=0 V, VDS=400 V, fSW=250 kHz |
| Effective Output Capacitance Energy Related | 95 pF typ; IN=0 V, VDS=0 to 400 V |
| Effective Output Capacitance Time Related | 145 pF typ; ID=5 A, IN=0 V, VDS=0 to 400 V |
| Reverse Recovery Charge | 0 nC typ; VR=400 V, ISD=5 A, dISD/dt=1 A/ns |
| Quiescent Current Ultra-Low-Power Mode | 80 µA typ, 95 µA max; VLPM=0 V, VDD=12 V |
| Quiescent Current | 0.5 mA typ; Transistor held off |
| Quiescent Current | 0.5 mA typ; Transistor held on |
| Operating Current | 43 mA typ; VDD=12 V, fSW=1 MHz, RDRV=40 kΩ, 50% duty cycle |
| 5-V LDO Output Voltage | 4.7 V min, 5.3 V max; VDD=12 V |
| Negative Supply | -13.9 V typ; 30-mA load current |
| Buck-Boost Converter FET Switching Frequency | 1 MHz typ; Buck-boost converter |
| Peak Inductor Current | 250 mA typ, 350 mA max; IOUT=20 mA, VIN=12 V, VOUT=-14 V |
| DC-DC Output Ripple Voltage | 50 mV pk-pk typ; CNEG=2.2 µF, IOUT=20 mA |
| Input and LPM Logic High Threshold | 2.5 V min; Driver input |
| Input and LPM Low Threshold | 0.8 V max; Driver input |
| Input and LPM Hysteresis | 0.8 V typ; Driver input |
| Input Pull-Down Resistance | 150 kΩ typ; Driver input |
| LPM Pin Pull-Down Resistance | 150 kΩ typ; Driver input |
| VDD Turn-On Threshold | 9.1 V typ; Undervoltage lockout, turn-on voltage |
| VDD Turn-Off Threshold | 8.5 V typ; Undervoltage lockout, turn-off voltage |
| UVLO Hysteresis | 550 mV typ; Undervoltage lockout |
| Current Fault Trip Point | 22 A min, 36 A typ, 50 A max; -40°C ≤ Tj ≤ 125°C |
| Temperature Trip Point | 165 °C typ; Overtemperature fault trip point |
| Temperature Trip Hysteresis | 20 °C typ; Overtemperature fault |
| Turn-On Drain Slew Rate | 100 V/ns typ; RDRV=15 kΩ |
| Turn-On Drain Slew Rate | 50 V/ns typ; RDRV=40 kΩ |
| Turn-On Drain Slew Rate | 25 V/ns typ; RDRV=100 kΩ |
| Slew Rate Variation | 25% typ; Turn-on, IL=5 A, RDRV=40 kΩ |
| Edge Rate Immunity | 150 V/ns max; Drain dv/dt, device remains off, inductor-fed, max di/dt=10 A/ns |
| Startup Time | 1 ms typ; VNEG rising above UVLO; time until gate responds to IN; CNEG=2.2 µF, CLDO=1 µF |
| Turn-On Propagation Delay | 20 ns typ; IN rising to IDS>1 A, VDS=400 V, RDRV=40 kΩ, VNEG=-14 V |
| Turn-On Delay Time | 12 ns typ; IDS>1 A to VDS<320 V, RDRV=40 kΩ |
| VDS Fall Time | 4.2 ns typ; VDS=320 V to VDS=80 V, ID=5 A |
| Datasheet Status | request_only |
Product Overview
Texas Instruments LMG3410R070 is a 600-V GaN power stage categorized under Power_Management. It is supplied in an RWH QFN-32 package with an 8.00 mm x 8.00 mm nominal body, giving the part a compact surface-mount format for power-stage assembly.
Core ratings include a 600 V drain-source absolute maximum, an 800 V transient drain-source absolute maximum under the specified pulse condition, and a 480 V recommended drain-source operating maximum. The device specifies 70 mΩ typical on-state resistance at Tj=25°C and 110 mΩ typical at Tj=125°C. Recommended operation uses a 9.5 V to 18 V supply, with 12 V nominal.
The part integrates driver-related functions with IN and LPM logic thresholds, a 5-V LDO output range, a negative supply, undervoltage lockout thresholds, current fault trip point, overtemperature trip point, and selectable turn-on drain slew rate through the RDRV resistor range. Its parameters support high-voltage DC-DC and switching power stages where GaN switching behavior, thermal resistance, fault response, and controlled dv/dt are design constraints.
Key Features
- 600 V drain-source absolute maximum rating
- 480 V recommended drain-source operating maximum
- 70 mΩ typical on-state resistance at 25°C
- 12 A recommended DC drain current at 125°C
- 9.5 V to 18 V recommended supply range
- Selectable turn-on slew rate using RDRV resistor
- 0 nC typical reverse recovery charge
- Integrated 5-V LDO output specification
- Undervoltage lockout with 550 mV typical hysteresis
- Current fault trip point from 22 A to 50 A
- Overtemperature trip point at 165°C typical
- RWH QFN-32, 8.00 mm square nominal package
Typical Applications
- High-voltage DC-DC power stages
- GaN switching power converters
- Inductor-fed switching circuits
- Controlled dv/dt power designs
- Power stages needing current fault detection
- Thermally managed QFN power assemblies
- 12 V supplied driver power stages
Procurement Notes
When requesting a quote for LMG3410R070, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What is the maximum drain-source voltage for LMG3410R070?
LMG3410R070 has a 600 V drain-source absolute maximum rating over the operating free-air temperature range. Its recommended drain-source operating condition is lower, with a specified maximum of 480 V.
What package is used for this Texas Instruments part?
The device is specified in an RWH QFN-32 package with an 8.00 mm x 8.00 mm nominal body. Thermal data is listed for the LMG3410R070 in this RWH QFN-32 package.
What supply voltage range is recommended for operation?
The recommended supply voltage range is 9.5 V minimum, 12 V nominal, and 18 V maximum. The supply voltage absolute maximum rating is listed separately as -0.3 V to 20 V.
How is turn-on drain slew rate specified?
Turn-on drain slew rate is specified versus RDRV. Typical values are 100 V/ns at 15 kΩ, 50 V/ns at 40 kΩ, and 25 V/ns at 100 kΩ.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.