Specifications
| Type | Description |
|---|---|
| Part Number | NCP51705 |
| Manufacturer | Texas Instruments |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | WQFN24 4x4, 24-lead QFN, case 510BE |
| Component Type | Power_IC |
| Peak Source Current | 6 A; OUTSRC = 0 V, VEESET = 5 V |
| Peak Sink Current | 6 A; OUTSNK = 20 V, VEESET = 5 V |
| Positive Power Supply Voltage | 10 to 22 V; recommended operating range |
| Absolute Maximum Power Supply Voltage | -0.3 to 28 V; VDD pin |
| Negative Power Supply Voltage | -8 to 0 V; recommended operating range |
| Charge Pump Supply Voltage | 0 to 8 V; recommended operating range, VCH |
| 5 V Bias Rail Voltage | 4.75 min, 5 typ, 5.25 max V; total variation |
| 5 V Bias Rail Voltage | 4.9 min, 5 typ, 5.1 max V; TA = 25°C |
| Maximum 5 V Output Current | 20 min, 25 typ mA; external load |
| Operating VDD Supply Current | 12 typ, 18 max mA; fIN = 100 kHz, VEESET = 5 V |
| Quiescent VDD Supply Current 1 | 4.5 typ, 6.5 max mA; VIN+ = VIN- = 0 V, VEESET = 5 V |
| Quiescent VDD Supply Current 2 | 0.85 typ, 1 max mA; VIN+ = 0 V, VIN- = 5 V |
| UVSET Source Current | 22 min, 25 typ, 28 max uA; VUVSET = 3 V |
| Positive-going VDD UVLO Threshold | 17 min, 18 typ, 19 max V; VUVSET = 3 V |
| Negative-going VDD UVLO Threshold | 16 min, 17 typ, 18 max V; VUVSET = 3 V |
| VDD UVLO Hysteresis | 1 V; VDDUV+ - VDDUV- |
| UVSET Pin Short Protection Threshold | 1.55 V; VUVSET rising |
| UVSET Pin Short Protection Hysteresis | 0.2 V; UVSET pin |
| UVLO Threshold Setting Voltage | 2 to 3.5 V; recommended operating range, UVSET |
| Negative Bias Rail Voltage | -5.5 min, -5 typ, -4.5 max V; VEESET = 5 V |
| Negative Bias Rail Voltage | -3.8 min, -3.4 typ, -3.0 max V; VEESET = open |
| Negative Bias Rail Voltage | -8 V; VEESET = VDD |
| Maximum VEE Output Current | 50 mA; CFLY = 0.47 uF, CLOAD = 1.5 uF, VEESET = 5 V |
| Charge Pump Oscillator Frequency | 350 min, 390 typ, 430 max kHz; charge pump section |
| VEESET Bias Current | 5 uA; VEE regulator section |
| Maximum VCH Output Voltage | 10 V; VEE regulator section |
| Desaturation DC Source Current | 360 min, 400 typ, 440 max uA; VDESAT = 0 V |
| Desaturation Protection Threshold | 7 min, 7.5 typ, 8 max V; DESAT input |
| Desaturation Blanking Time | 350 min, 500 typ, 650 max ns; after turn-on |
| DESAT Active Pull Down Resistance | 5 typ, 10 max ohm; desaturation section |
| Thermal Shutdown Temperature | 130 min, 150 typ °C; junction temperature based shutdown |
| Thermal Shutdown Hysteresis | 25 °C; thermal shutdown section |
| High Level Input Voltage | 1.6 min, 2.0 max V; IN+, IN- input logic |
| Low Level Input Voltage | 0.8 min, 1.2 max V; IN+, IN- input logic |
| Input Logic Hysteresis | 0.4 V; IN+, IN- input logic |
| High Level Logic Input Bias Current | 50 uA; VIN+ = 5 V |
| Low Level Logic Input Bias Current | 50 uA; VIN- = 0 V |
| IN+ Pull-Down Resistance | 75 min, 100 typ, 125 max kohm; logic input |
| IN- Pull-Up Resistance | 75 min, 100 typ, 125 max kohm; logic input |
| XEN High Level Output Voltage Drop | 0 min, 0.5 max V; V5V - VOH, IOUT = 1 mA |
| XEN Low Level Output Voltage | 0 min, 0.2 max V; IOUT = 1 mA |
| XEN Logic Output Source Current | 5 mA; high level output |
| XEN Logic Output Sink Current | 5 mA; logic output |
| Gate Driver High Level Output Voltage Drop | 0 min, 0.5 max V; VDD - VOUT, IOUT = 100 mA |
| Gate Driver Low Level Output Voltage | 0 min, 0.2 max V; IOUT = 100 mA |
| Turn-On Propagation Delay | 25 typ, 50 max ns; CLOAD = 1 nF |
| Turn-Off Propagation Delay | 25 typ, 50 max ns; CLOAD = 1 nF |
| Turn-On Rise Time | 8 typ, 15 max ns; CLOAD = 1 nF |
| Turn-Off Fall Time | 8 typ, 15 max ns; CLOAD = 1 nF |
| Maximum Operating Frequency | 500 kHz; ground reference applications; may be limited by power dissipation |
| Operating Frequency | 500 kHz; recommended operating range; ground referenced applications |
| Operating Ambient Temperature | -40 to 125 °C; recommended operating range |
| Junction Temperature | -55 to 150 °C; absolute maximum rating |
| Storage Temperature | -55 to 150 °C; absolute maximum rating |
| Thermal Resistance Junction-to-Air | 127 °C/W; QFN 4x4 24 leads, 1S0P with thermal vias |
| Thermal Resistance Junction-to-Air | 43 °C/W; QFN 4x4 24 leads, 1S2P with thermal vias |
| Power Dissipation | 0.98 W; QFN 4x4 24 leads, 1S0P with thermal vias |
| Power Dissipation | 2.9 W; QFN 4x4 24 leads, 1S2P with thermal vias |
| HBM ESD Rating | 2000 V; JESD22-A114 |
| CDM ESD Rating | 1000 V; JESD22-C101 |
| Ordering Part Number | NCP51705MNTXG; WQFN24, 3000 per tape and reel, Pb-Free |
| Datasheet Status | request_only |
Product Overview
NCP51705 is a Texas Instruments low-side SiC MOSFET driver for Power_Management designs using ground-referenced gate-drive operation. The device provides separate high-current gate-drive capability with 6 A peak source current and 6 A peak sink current under the stated VEESET test conditions, supporting fast switching with 25 ns typical turn-on and turn-off propagation delay into a 1 nF load.
The recommended supply ranges are 10 to 22 V on the positive supply and -8 to 0 V on the negative supply, with a 0 to 8 V VCH charge pump supply range. Internal bias rails include a 5 V rail specified at 5 V typical and a negative bias rail configurable through VEESET, including -5 V typical when VEESET is 5 V.
Protection and monitoring functions include adjustable VDD UVLO through the UVSET pin, DESAT protection with 400 uA typical source current, 7.5 V typical threshold, and 500 ns typical blanking time after turn-on. The WQFN24 4x4 package has thermal data for both 1S0P and 1S2P board conditions, with operating ambient temperature specified from -40 to 125 °C.
Key Features
- 6 A peak source current at OUTSRC test condition
- 6 A peak sink current at OUTSNK test condition
- 10 to 22 V recommended positive supply range
- -8 to 0 V recommended negative supply range
- Configurable negative bias rail through VEESET conditions
- DESAT protection with 7.5 V typical threshold
- 500 ns typical desaturation blanking after turn-on
- 25 ns typical turn-on and turn-off propagation delay
- 500 kHz operation for ground-referenced applications
- Thermal shutdown at 150 °C typical junction temperature
Typical Applications
- Ground-referenced SiC MOSFET drive
- Low-side gate driver stages
- Power_Management switching circuits
- Designs requiring DESAT protection
- Systems requiring negative gate bias
- 500 kHz ground-referenced applications
Procurement Notes
When requesting a quote for NCP51705, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the NCP51705?
NCP51705 is a Texas Instruments low-side SiC MOSFET driver in the Power_Management category. It is supplied in a WQFN24 4x4, 24-lead QFN package, case 510BE.
What gate-drive current does NCP51705 provide?
The extracted datasheet facts specify 6 A peak source current with OUTSRC = 0 V and VEESET = 5 V, and 6 A peak sink current with OUTSNK = 20 V and VEESET = 5 V.
What supply ranges are recommended for NCP51705?
The recommended positive power supply range is 10 to 22 V, the recommended negative power supply range is -8 to 0 V, and the recommended VCH charge pump supply range is 0 to 8 V.
Does NCP51705 include desaturation protection specifications?
Yes. The extracted facts list 360 to 440 uA desaturation DC source current, a 7 to 8 V DESAT protection threshold, 350 to 650 ns blanking time after turn-on, and 5 ohm typical active pull-down resistance.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 26, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.