Specifications
| Type | Description |
|---|---|
| Part Number | NTD4809N |
| Manufacturer | LG |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | DPAK/IPAK; DPAK-3 case 369AA 6.10 x 6.54 x 2.28 mm, 2.29P; IPAK case 369AD straight lead |
| Drain-to-Source Voltage | 30 V; maximum rating, TJ=25°C unless otherwise noted |
| Gate-to-Source Voltage | ±20 V; maximum rating, TJ=25°C unless otherwise noted |
| Continuous Drain Current | 13.1 A; RθJA note 1, TA=25°C |
| Continuous Drain Current | 10.1 A; RθJA note 1, TA=85°C |
| Power Dissipation | 2.63 W; RθJA note 1, TA=25°C |
| Continuous Drain Current | 9.6 A; RθJA note 2 steady state, TA=25°C |
| Continuous Drain Current | 7.4 A; RθJA note 2 steady state, TA=85°C |
| Power Dissipation | 1.4 W; RθJA note 2 steady state, TA=25°C |
| Continuous Drain Current | 58 A; RθJC note 1, TC=25°C |
| Continuous Drain Current | 45 A; RθJC note 1, TC=85°C |
| Power Dissipation | 52 W; RθJC note 1, TC=25°C |
| Pulsed Drain Current | 130 A; tp=10 µs, TA=25°C |
| Current Limited by Package | 45 A; TA=25°C |
| Operating Junction and Storage Temperature | -55 to 175 °C; maximum rating |
| Source Current Body Diode | 43 A; maximum rating |
| Drain-to-Source dV/dt | 6.0 V/ns; maximum rating |
| Single Pulse Drain-to-Source Avalanche Energy | 91.0 mJ; VDD=24 V, VGS=10 V, L=1.0 mH, IL(pk)=13.5 A, RG=25 Ω |
| Lead Temperature for Soldering | 260 °C; 1/8 inch from case for 10 s |
| Junction-to-Case Thermal Resistance | 2.9 °C/W; drain |
| Junction-to-TAB Thermal Resistance | 3.5 °C/W; drain |
| Junction-to-Ambient Thermal Resistance | 57.1 °C/W; steady state, surface-mounted on FR4 board using 1 in² pad size, 1 oz Cu |
| Junction-to-Ambient Thermal Resistance | 107.2 °C/W; steady state, surface-mounted on FR4 board using minimum recommended pad size |
| Drain-to-Source Breakdown Voltage | 30 V min; VGS=0 V, ID=250 µA |
| Drain-to-Source Breakdown Voltage Temperature Coefficient | 25 mV/°C typ; TJ=25°C unless otherwise noted |
| Zero Gate Voltage Drain Current | 1.0 µA max; VGS=0 V, VDS=24 V, TJ=25°C |
| Zero Gate Voltage Drain Current | 10 µA max; VGS=0 V, VDS=24 V, TJ=125°C |
| Gate-to-Source Leakage Current | ±100 nA max; VDS=0 V, VGS=±20 V |
| Gate Threshold Voltage | 1.5 V min, 2.5 V max; VGS=VDS, ID=250 µA |
| Negative Threshold Temperature Coefficient | 5.7 mV/°C typ; TJ=25°C unless otherwise noted |
| Drain-to-Source On Resistance | 7.0 mΩ typ, 9.0 mΩ max; VGS=10 to 11.5 V, ID=30 A |
| Drain-to-Source On Resistance | 7.0 mΩ typ; VGS=10 to 11.5 V, ID=15 A |
| Drain-to-Source On Resistance | 12 mΩ typ, 14 mΩ max; VGS=4.5 V, ID=30 A |
| Drain-to-Source On Resistance | 11 mΩ typ; VGS=4.5 V, ID=15 A |
| Forward Transconductance | 9.0 S typ; VDS=15 V, ID=15 A |
| Input Capacitance | 1456 pF typ; VGS=0 V, VDS=12 V, f=1.0 MHz |
| Output Capacitance | 315 pF typ; VGS=0 V, VDS=12 V, f=1.0 MHz |
| Reverse Transfer Capacitance | 200 pF typ; VGS=0 V, VDS=12 V, f=1.0 MHz |
| Total Gate Charge | 11 nC typ, 13 nC max; VGS=4.5 V, VDS=15 V, ID=30 A |
| Threshold Gate Charge | 2.5 nC typ; VGS=4.5 V, VDS=15 V, ID=30 A |
| Gate-to-Source Charge | 4.8 nC typ; VGS=4.5 V, VDS=15 V, ID=30 A |
| Gate-to-Drain Charge | 5.0 nC typ; VGS=4.5 V, VDS=15 V, ID=30 A |
| Total Gate Charge | 25 nC typ; VGS=11.5 V, VDS=15 V, ID=30 A |
| Turn-On Delay Time | 12.3 ns typ; VGS=4.5 V, VDS=15 V, ID=15 A, RG=3.0 Ω |
| Rise Time | 21.3 ns typ; VGS=4.5 V, VDS=15 V, ID=15 A, RG=3.0 Ω |
| Turn-Off Delay Time | 15.1 ns typ; VGS=4.5 V, VDS=15 V, ID=15 A, RG=3.0 Ω |
| Fall Time | 5.3 ns typ; VGS=4.5 V, VDS=15 V, ID=15 A, RG=3.0 Ω |
| Turn-On Delay Time | 7.0 ns typ; VGS=11.5 V, VDS=15 V, ID=15 A, RG=3.0 Ω |
| Rise Time | 22.7 ns typ; VGS=11.5 V, VDS=15 V, ID=15 A, RG=3.0 Ω |
| Turn-Off Delay Time | 25.3 ns typ; VGS=11.5 V, VDS=15 V, ID=15 A, RG=3.0 Ω |
| Fall Time | 2.8 ns typ; VGS=11.5 V, VDS=15 V, ID=15 A, RG=3.0 Ω |
| Forward Diode Voltage | 0.95 V typ, 1.2 V max; VGS=0 V, IS=30 A, TJ=25°C |
| Forward Diode Voltage | 0.83 V typ; VGS=0 V, IS=30 A, TJ=125°C |
| Reverse Recovery Time | 19.5 ns typ; VGS=0 V, dIs/dt=100 A/µs, IS=30 A |
| Charge Time | 10.7 ns typ; VGS=0 V, dIs/dt=100 A/µs, IS=30 A |
| Discharge Time | 8.8 ns typ; VGS=0 V, dIs/dt=100 A/µs, IS=30 A |
| Reverse Recovery Charge | 9.2 nC typ; VGS=0 V, dIs/dt=100 A/µs, IS=30 A |
| Source Inductance | 2.49 nH typ; package parasitic value |
| Drain Inductance DPAK | 0.0164 nH typ; package parasitic value |
| Drain Inductance IPAK | 1.88 nH typ; TA=25°C, package parasitic value |
| Gate Inductance | 3.46 nH typ; package parasitic value |
| Gate Resistance | 2.4 Ω typ; package parasitic value |
| AEC Qualification | AEC-Q101 qualified; NVD4809N variant |
| Pb-Free and RoHS Compliance | Pb-Free and RoHS compliant; device feature statement |
| Ordering Option | NTD4809NT4G, DPAK, 2500/Tape & Reel, Pb-Free |
| Ordering Option | NTD4809N-1G, IPAK, 75 units/rail, Pb-Free |
| Ordering Option | NTD4809N-35G, IPAK trimmed lead 3.5 ± 0.15 mm, 75 units/rail, Pb-Free |
| Ordering Option | NVD4809NT4G, DPAK, 2500/Tape & Reel, Pb-Free |
| Datasheet Status | request_only |
Product Overview
The NTD4809N is an LG Power_Management single N-channel power MOSFET with a 30 V drain-to-source maximum rating and ±20 V gate-to-source maximum rating. It is specified for continuous drain current ratings from 7.4 A to 13.1 A under ambient RθJA conditions and up to 58 A at TC=25°C under the RθJC note 1 condition, with pulsed drain current rated at 130 A for tp=10 µs at TA=25°C.
Electrical characteristics include a 30 V minimum drain-to-source breakdown voltage, 1.5 V minimum to 2.5 V maximum gate threshold voltage, and drain-to-source on-resistance of 7.0 mΩ typical, 9.0 mΩ maximum at VGS=10 to 11.5 V and ID=30 A. At VGS=4.5 V and ID=30 A, on-resistance is 12 mΩ typical and 14 mΩ maximum.
Package and assembly data cover DPAK and IPAK options, Pb-Free and RoHS-compliant ordering, 260°C lead temperature for soldering, and thermal resistance values for junction-to-case, junction-to-tab, and junction-to-ambient mounting conditions.
Key Features
- 30 V drain-to-source maximum voltage rating
- ±20 V gate-to-source maximum voltage rating
- 13.1 A continuous drain current at TA=25°C
- 58 A continuous drain current at TC=25°C
- 7.0 mΩ typical on-resistance at high gate drive
- 12 mΩ typical on-resistance at 4.5 V gate drive
- 130 A pulsed drain current rating
- -55 to 175°C junction and storage range
- DPAK and IPAK package ordering options
- Pb-Free and RoHS compliant device feature
Typical Applications
- Low-voltage power switching
- Power MOSFET drive stages
- DPAK-mounted power boards
- IPAK through-hole power assemblies
- Body-diode conduction paths
- 30 V MOSFET replacement designs
- Thermally managed FR4 layouts
Procurement Notes
When requesting a quote for NTD4809N, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the NTD4809N?
The NTD4809N is a single N-channel power MOSFET in the Power_Management category. The extracted package information lists DPAK/IPAK options, including DPAK-3 case 369AA and IPAK case 369AD straight lead.
What voltage and gate ratings are specified?
The datasheet facts specify a 30 V maximum drain-to-source voltage rating and a ±20 V maximum gate-to-source voltage rating at TJ=25°C unless otherwise noted.
What on-resistance values are listed for NTD4809N?
At VGS=10 to 11.5 V and ID=30 A, drain-to-source on-resistance is 7.0 mΩ typical and 9.0 mΩ maximum. At VGS=4.5 V and ID=30 A, it is 12 mΩ typical and 14 mΩ maximum.
Which ordering options are included in the extracted facts?
The listed ordering options include NTD4809NT4G in DPAK tape and reel, NTD4809N-1G in IPAK rail, NTD4809N-35G in trimmed-lead IPAK rail, and NVD4809NT4G in DPAK tape and reel.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.