Specifications
| Type | Description |
|---|---|
| Part Number | NTD4815N |
| Manufacturer | LG |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package / Case | DPAK CASE 369AA / IPAK CASE 369AC; DPAK dimensions include 6.35-6.73 mm E, 9.40-10.41 mm H, 2.18-2.38 mm A |
| Drain-to-Source Voltage | 30 V; maximum rating, TJ=25°C |
| Gate-to-Source Voltage | ±20 V; maximum rating, TJ=25°C |
| Continuous Drain Current | 8.5 A; TA=25°C, RθJA, Note 1 |
| Continuous Drain Current | 6.5 A; TA=85°C, RθJA, Note 1 |
| Power Dissipation | 1.92 W; TA=25°C, RθJA, Note 1 |
| Continuous Drain Current | 6.9 A; TA=25°C, RθJA steady state, Note 2 |
| Continuous Drain Current | 5.3 A; TA=85°C, RθJA steady state, Note 2 |
| Power Dissipation | 1.26 W; TA=25°C, RθJA, Note 2 |
| Continuous Drain Current | 35 A; TC=25°C, RθJC, Note 1 |
| Continuous Drain Current | 27 A; TC=85°C, RθJC, Note 1 |
| Power Dissipation | 32.6 W; TC=25°C, RθJC, Note 1 |
| Pulsed Drain Current | 87 A; tp=10 µs, TA=25°C |
| Package-Limited Drain Current | 35 A; TA=25°C |
| Operating Junction and Storage Temperature | -55 to +175 °C; maximum rating |
| Source Current | 27 A; body diode |
| Drain-to-Source dV/dt | 6 V/ns; maximum rating |
| Single Pulse Drain-to-Source Avalanche Energy | 60.5 mJ; VDD=24 V, VGS=10 V, IL=11 Apk, L=1.0 mH, RG=25 Ω |
| Lead Temperature for Soldering | 260 °C; 1/8 inch from case for 10 s |
| Junction-to-Case Thermal Resistance | 4.6 °C/W; drain |
| Junction-to-TAB Thermal Resistance | 3.5 °C/W; drain |
| Junction-to-Ambient Thermal Resistance | 78 °C/W; steady state, FR4 board with 1 sq-in pad, 1 oz Cu |
| Junction-to-Ambient Thermal Resistance | 119 °C/W; steady state, FR4 board with minimum recommended pad size |
| Drain-to-Source Breakdown Voltage | 30 V min; VGS=0 V, ID=250 µA |
| Breakdown Voltage Temperature Coefficient | 25 mV/°C typ; V(BR)DSS/TJ |
| Zero Gate Voltage Drain Current | 1 µA max; VGS=0 V, VDS=24 V, TJ=25°C |
| Zero Gate Voltage Drain Current | 10 µA max; VGS=0 V, VDS=24 V, TJ=125°C |
| Gate-to-Source Leakage Current | ±100 nA max; VDS=0 V, VGS=±20 V |
| Gate Threshold Voltage | 1.5 V min, 2.5 V max; VGS=VDS, ID=250 µA |
| Negative Threshold Temperature Coefficient | 5.6 mV/°C typ; VGS(TH)/TJ |
| Drain-to-Source On Resistance | 12 mΩ typ, 15 mΩ max; VGS=10 V, ID=30 A |
| Drain-to-Source On Resistance | 11.5 mΩ typ; VGS=10 V, ID=15 A |
| Drain-to-Source On Resistance | 21 mΩ typ, 25 mΩ max; VGS=4.5 V, ID=30 A |
| Drain-to-Source On Resistance | 18.3 mΩ typ; VGS=4.5 V, ID=15 A |
| Forward Transconductance | 6.0 S typ; VDS=15 V, ID=10 A |
| Input Capacitance | 770 pF typ; VGS=0 V, f=1.0 MHz, VDS=12 V |
| Output Capacitance | 181 pF typ; VGS=0 V, f=1.0 MHz, VDS=12 V |
| Reverse Transfer Capacitance | 108 pF typ; VGS=0 V, f=1.0 MHz, VDS=12 V |
| Total Gate Charge | 6.0 nC typ, 6.6 nC max; VGS=4.5 V, VDS=15 V, ID=30 A |
| Threshold Gate Charge | 0.9 nC typ; VGS=4.5 V, VDS=15 V, ID=30 A |
| Gate-to-Source Charge | 2.5 nC typ; VGS=4.5 V, VDS=15 V, ID=30 A |
| Gate-to-Drain Charge | 3.1 nC typ; VGS=4.5 V, VDS=15 V, ID=30 A |
| Total Gate Charge | 14.1 nC typ; VGS=11.5 V, VDS=15 V, ID=30 A |
| Turn-On Delay Time | 10.5 ns typ; VGS=4.5 V, RG=3.0 Ω, VDS=15 V, ID=15 A |
| Rise Time | 2.4 ns typ; VGS=4.5 V, RG=3.0 Ω, VDS=15 V, ID=15 A |
| Turn-Off Delay Time | 11.4 ns typ; VGS=4.5 V, RG=3.0 Ω, VDS=15 V, ID=15 A |
| Fall Time | 3.5 ns typ; VGS=4.5 V, RG=3.0 Ω, VDS=15 V, ID=15 A |
| Turn-On Delay Time | 6.3 ns typ; VGS=11.5 V, RG=3.0 Ω, VDS=15 V, ID=15 A |
| Rise Time | 1.6 ns typ; VGS=11.5 V, RG=3.0 Ω, VDS=15 V, ID=15 A |
| Turn-Off Delay Time | 18.4 ns typ; VGS=11.5 V, RG=3.0 Ω, VDS=15 V, ID=15 A |
| Fall Time | 2.3 ns typ; VGS=11.5 V, RG=3.0 Ω, VDS=15 V, ID=15 A |
| Forward Diode Voltage | 1.0 V typ, 1.2 V max; VGS=0 V, IS=30 A, TJ=25°C |
| Forward Diode Voltage | 0.92 V typ; VGS=0 V, IS=30 A, TJ=125°C |
| Reverse Recovery Time | 15.3 ns typ; VGS=0 V, dIS/dt=100 A/µs, IS=30 A |
| Reverse Recovery Charge | 5.5 nC typ; VGS=0 V, dIS/dt=100 A/µs, IS=30 A |
| Datasheet Status | request_only |
Product Overview
The NTD4815N is an LG N-channel power MOSFET categorized under Power_Management. It is specified with a 30 V drain-to-source maximum rating and ±20 V gate-to-source maximum rating, supporting use in low-voltage switching stages where drain voltage, gate drive, and thermal limits must be checked against the datasheet conditions.
Current capability depends strongly on thermal reference conditions. The device is rated for 8.5 A continuous drain current at TA=25°C using RθJA Note 1, 6.9 A at TA=25°C under steady-state RθJA Note 2, and 35 A at TC=25°C using RθJC Note 1. The package-limited drain current is 35 A, with pulsed drain current rated at 87 A for tp=10 µs at TA=25°C.
The package information lists DPAK CASE 369AA and IPAK CASE 369AC, with DPAK dimensions including 6.35-6.73 mm E, 9.40-10.41 mm H, and 2.18-2.38 mm A. Assembly-related ratings include 260°C lead temperature for soldering for 10 s at 1/8 inch from the case. Electrical characteristics include low milliohm on resistance, nanosecond switching times, body-diode ratings, and avalanche energy of 60.5 mJ.
Key Features
- 30 V drain-to-source maximum rating at TJ=25°C
- ±20 V gate-to-source maximum rating at TJ=25°C
- 35 A continuous drain current at TC=25°C
- 87 A pulsed drain current for 10 µs pulses
- 12 mΩ typical on resistance at 10 V gate drive
- 21 mΩ typical on resistance at 4.5 V gate drive
- 6.0 nC typical total gate charge at 4.5 V
- Nanosecond switching times at 15 V drain-source test condition
- 60.5 mJ single-pulse avalanche energy rating
- DPAK CASE 369AA and IPAK CASE 369AC package options
- -55 to +175°C junction and storage temperature range
- 260°C lead temperature soldering rating for 10 seconds
Typical Applications
- Low-voltage power switching
- MOSFET load switches
- DC power path control
- PWM switching stages
- Body-diode conduction circuits
- Thermally managed power boards
- Avalanche-rated switching designs
- Gate-driven power management stages
Procurement Notes
When requesting a quote for NTD4815N, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is the NTD4815N?
The NTD4815N is an LG N-channel power MOSFET in the Power_Management category. The extracted package data lists DPAK CASE 369AA and IPAK CASE 369AC package options.
What voltage ratings are specified for NTD4815N?
The datasheet facts specify a 30 V drain-to-source maximum rating at TJ=25°C and a ±20 V gate-to-source maximum rating at TJ=25°C. The drain-to-source breakdown voltage is listed as 30 V minimum at VGS=0 V and ID=250 µA.
What current ratings should be considered for this MOSFET?
Continuous drain current is condition-dependent: 8.5 A at TA=25°C under RθJA Note 1, 6.9 A at TA=25°C steady state under Note 2, and 35 A at TC=25°C under RθJC Note 1. Pulsed drain current is 87 A.
What on-resistance values are provided for NTD4815N?
At VGS=10 V and ID=30 A, drain-to-source on resistance is 12 mΩ typical and 15 mΩ maximum. At VGS=4.5 V and ID=30 A, it is 21 mΩ typical and 25 mΩ maximum.
What thermal resistance values are listed in the datasheet facts?
The extracted thermal data lists 4.6°C/W junction-to-case, 3.5°C/W junction-to-TAB, 78°C/W junction-to-ambient on an FR4 board with 1 sq-in pad, and 119°C/W junction-to-ambient with minimum recommended pad size.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 21, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.