OPA858 FET Input Operational Amplifier

Texas Instruments Signal_Chain — specifications, applications, sourcing support and RFQ.

OPA858 FET Input Operational Amplifier

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
OPA858
Manufacturer
Texas Instruments
Package
DSG WSON-8, 2.00 mm x 2.00 mm; bare die 0.751 mm x 0.705 mm
Category
Signal Chain
Product Type
Operational Amplifier

Quick Sourcing Note

OPA858 from Texas Instruments is a Signal_Chain FET input operational amplifier offered in a DSG WSON-8 2.00 mm x 2.00 mm package and as a 0.751 mm x 0.705 mm bare die. Extracted datasheet parameters include 5.5 GHz gain bandwidth product at gain of 7 V/V, 1.2 GHz typical small-signal bandwidth, 600 MHz typical large-signal bandwidth, and 2.5 nV/sqrt(Hz) input voltage noise at 1 MHz. The CMOS input structure, 0.8 pF input capacitance, 2000 V/us slew rate, and 65 mA minimum linear output drive support wideband signal-chain use, fast transient amplification, low-capacitance input stages, and compact bare-die assemblies.

Specifications

TypeDescription
Part NumberOPA858
ManufacturerTexas Instruments
Product TypeOperational Amplifier
CategorySignal Chain
Package CaseDSG WSON-8, 2.00 mm x 2.00 mm; bare die 0.751 mm x 0.705 mm
Gain Bandwidth Product5.5 GHz; V_S+ = 5 V, V_S- = 0 V, G = 7 V/V, R_F = 453 ohm, R_L = 200 ohm, T_A = 25°C
Minimum Stable Gain7 V/V; decompensated amplifier; device comparison table
Input TypeCMOS; device comparison table
Input Voltage Noise2.5 nV/sqrt(Hz); f = 1 MHz
Input Capacitance0.8 pF; device comparison table
Common-Mode Input Capacitance0.62 pF; electrical characteristics
Differential Input Capacitance0.2 pF; electrical characteristics
Small-Signal Bandwidth1.2 GHz typ; V_OUT = 100 mVpp
Large-Signal Bandwidth600 MHz typ; V_OUT = 2 Vpp
Bandwidth for 0.1-dB Flatness130 MHz typ; V_S+ = 5 V, V_S- = 0 V, G = 7 V/V, T_A = 25°C
Slew Rate2000 V/us typ; 10%-90%, V_OUT = 2 V step
Rise Time0.3 ns typ; V_OUT = 100 mV step
Fall Time0.3 ns typ; V_OUT = 100 mV step
Settling Time to 0.1%8 ns typ; V_OUT = 2 V step
Settling Time to 0.001%3000 ns typ; V_OUT = 2 V step
Overshoot or Undershoot7% typ; V_OUT = 2 V step
Overdrive Recovery200 ns typ; 2x output overdrive, 0.1% recovery
Second-Order Harmonic Distortion at 10 MHz88 dBc typ; f = 10 MHz, V_OUT = 2 Vpp
Second-Order Harmonic Distortion at 100 MHz64 dBc typ; f = 100 MHz, V_OUT = 2 Vpp
Third-Order Harmonic Distortion at 10 MHz86 dBc typ; f = 10 MHz, V_OUT = 2 Vpp
Third-Order Harmonic Distortion at 100 MHz68 dBc typ; f = 100 MHz, V_OUT = 2 Vpp
Closed-Loop Output Impedance0.15 ohm typ; f = 1 MHz
Open-Loop Voltage Gain72 dB min, 75 dB typ; V_S+ = 5 V, V_S- = 0 V, G = 7 V/V, T_A = 25°C
Input Offset Voltage-5 mV min, ±0.8 mV typ, 5 mV max; T_A = 25°C
Input Offset Voltage Drift±12 uV/°C typ; T_A = -40°C to +125°C
Input Bias Current±0.4 pA typ, 5 pA max; T_A = 25°C
Input Offset Current±0.01 pA typ, 5 pA max; T_A = 25°C
Common-Mode Rejection Ratio70 dB min, 90 dB typ; V_CM = ±0.5 V referenced to midsupply
Common-Mode Input Resistance1 Gohm typ; electrical characteristics
Differential Input Resistance1 Gohm typ; electrical characteristics
Common-Mode Input Voltage High at 3.3 V1.7 V min, 1.9 V typ; CMRR > 66 dB, V_S+ = 3.3 V
Common-Mode Input Voltage Low at 3.3 V0 V min, 0.4 V typ; CMRR > 66 dB, V_S+ = 3.3 V
Common-Mode Input Voltage High3.4 V min, 3.6 V typ; CMRR > 66 dB
Common-Mode Input Voltage High Over Temperature3.4 V min; T_A = -40°C to +125°C, CMRR > 66 dB
Common-Mode Input Voltage Low0 V min, 0.4 V typ; CMRR > 66 dB
Common-Mode Input Voltage Low Over Temperature0.35 V typ; T_A = -40°C to +125°C, CMRR > 66 dB
Output Voltage High at 3.3 V2.3 V min, 2.4 V typ; T_A = 25°C, V_S+ = 3.3 V
Output Voltage High3.95 V min, 4.1 V typ; T_A = 25°C
Output Voltage High Over Temperature3.9 V min; T_A = -40°C to +125°C
Output Voltage Low at 3.3 V1.05 V min, 1.15 V typ; T_A = 25°C, V_S+ = 3.3 V
Output Voltage Low1.05 V min, 1.15 V typ; T_A = 25°C
Output Voltage Low Over Temperature1.2 V max; T_A = -40°C to +125°C
Linear Output Drive65 mA min, 80 mA typ; sink and source, R_L = 10 ohm, A_OL > 60 dB
Linear Output Drive Over Temperature64 mA min; sink and source, T_A = -40°C to +125°C, R_L = 10 ohm, A_OL > 60 dB
Output Short-Circuit Current85 mA min, 105 mA typ; electrical characteristics
Quiescent Current at 5 V18 mA min, 20.5 mA typ, 24 mA max; V_S+ = 5 V
Quiescent Current at 3.3 V17.5 mA min, 20 mA typ, 23.5 mA max; V_S+ = 3.3 V
Quiescent Current at 5.25 V18 mA min, 21 mA typ, 24 mA max; V_S+ = 5.25 V
Quiescent Current at 125°C24.5 mA max; T_A = 125°C
Quiescent Current at -40°C18.5 mA max; T_A = -40°C
Positive Power-Supply Rejection Ratio74 dB min, 84 dB typ; electrical characteristics
Negative Power-Supply Rejection Ratio70 dB min, 80 dB typ; electrical characteristics
Disable Voltage Threshold0.65 V min, 1 V max; amplifier off when PD is less than this voltage
Enable Voltage Threshold1.5 V min, 1.8 V max; amplifier on when PD is greater than this voltage
Power-Down Quiescent Current70 uA typ, 140 uA max; power-down mode
PD Bias Current70 uA typ, 200 uA max; power-down pin
Turn-On Time Delay13 ns typ; time to V_OUT = 90% of final value
Turn-Off Time Delay120 ns typ; power-down control
Recommended Total Supply Voltage3.3 V min, 5 V nom, 5.25 V max; V_S = V_S+ - V_S-
Recommended Operating Free-Air Temperature-40°C min, 125°C max; recommended operating conditions
Absolute Maximum Total Supply Voltage5.5 V max; V_S = V_S+ - V_S-
Absolute Maximum Input VoltageV_S- - 0.5 V min, V_S+ + 0.5 V max; IN+ and IN- pins
Absolute Maximum Differential Input Voltage1 V max; differential input
Absolute Maximum Output VoltageV_S- - 0.5 V min, V_S+ + 0.5 V max; OUT pin
Continuous Input Current±10 mA max; absolute maximum rating
Continuous Output Current±100 mA max; long-term continuous output current for electromigration limits
Junction Temperature150°C max; absolute maximum rating
Storage Temperature-65°C min, 150°C max; absolute maximum rating
ESD Rating HBM±1000 V; human-body model per ANSI/ESDA/JEDEC JS-001
ESD Rating CDM±1500 V; charged-device model per JEDEC JESD22-C101
Junction-to-Ambient Thermal Resistance80.1°C/W; DSG WSON-8 package
Junction-to-Case Top Thermal Resistance100°C/W; DSG WSON-8 package
Junction-to-Board Thermal Resistance45°C/W; DSG WSON-8 package
Junction-to-Top Characterization Parameter6.8°C/W; DSG WSON-8 package
Junction-to-Board Characterization Parameter45.2°C/W; DSG WSON-8 package
Junction-to-Case Bottom Thermal Resistance22.7°C/W; DSG WSON-8 package
Power-Down Logic FunctionPD logic low = power off; PD logic high = normal operation; pin function description
Bare Die Thickness381 um; bare die information
Bare Die Backside PotentialVS-; wafer backside electrically connected to VS-
Bare Die Bond Pad MetallizationAlCu; bare die information
Datasheet Statusrequest_only

Product Overview

OPA858 is a Texas Instruments Signal_Chain FET input operational amplifier with a CMOS input type. The device is characterized as a decompensated amplifier with a 7 V/V minimum stable gain and a 5.5 GHz gain bandwidth product under 5 V single-supply test conditions. Key dynamic values include 1.2 GHz typical small-signal bandwidth at 100 mVpp, 600 MHz typical large-signal bandwidth at 2 Vpp, 130 MHz typical 0.1-dB flatness bandwidth, and 2000 V/us typical slew rate for a 2 V output step.

Input-related specifications include 2.5 nV/sqrt(Hz) input voltage noise at 1 MHz, 0.8 pF input capacitance, 0.62 pF common-mode input capacitance, and 0.2 pF differential input capacitance. DC parameters include ±0.4 pA typical input bias current at 25°C, ±0.01 pA typical input offset current at 25°C, and 70 dB minimum common-mode rejection ratio for the stated common-mode test range.

The device is available in a DSG WSON-8 2.00 mm x 2.00 mm package and as a 0.751 mm x 0.705 mm bare die. Bare-die data lists 381 um thickness, AlCu bond pad metallization, and a wafer backside electrically connected to VS-. Applications should align with the documented wide bandwidth, low input capacitance, power-down control, and linear output drive characteristics.

Key Features

  • 5.5 GHz gain bandwidth product at 7 V/V gain
  • CMOS FET input operational amplifier architecture
  • 2.5 nV/sqrt(Hz) input voltage noise at 1 MHz
  • 0.8 pF input capacitance from device comparison table
  • 1.2 GHz typical small-signal bandwidth at 100 mVpp
  • 600 MHz typical large-signal bandwidth at 2 Vpp
  • 2000 V/us typical slew rate for 2 V step
  • 65 mA minimum linear output drive, sink and source
  • Power-down pin supports logic-controlled amplifier off state
  • DSG WSON-8 package plus documented bare-die option

Typical Applications

  • Wideband signal-chain amplification
  • Low-capacitance input buffer stages
  • Fast transient signal conditioning
  • Power-down controlled amplifier circuits
  • Compact DSG WSON-8 assemblies
  • Bare-die signal-chain assemblies
  • High-output-drive analog stages

Procurement Notes

When requesting a quote for OPA858, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For analog and signal-chain sourcing, supply voltage, bandwidth, accuracy, noise level, package, temperature grade, input/output configuration and qualification requirements should be verified before approval.

FAQ

What type of amplifier is the OPA858?

OPA858 is a Texas Instruments FET input operational amplifier in the Signal_Chain category. The extracted datasheet facts identify a CMOS input type and a decompensated amplifier behavior with 7 V/V minimum stable gain.

What bandwidth values are specified for OPA858?

The extracted facts list 5.5 GHz gain bandwidth product, 1.2 GHz typical small-signal bandwidth at 100 mVpp, 600 MHz typical large-signal bandwidth at 2 Vpp, and 130 MHz typical bandwidth for 0.1-dB flatness.

What package and bare-die options are documented?

The package case is DSG WSON-8, 2.00 mm x 2.00 mm. The facts also list a 0.751 mm x 0.705 mm bare die, 381 um bare-die thickness, AlCu bond pad metallization, and backside potential connected to VS-.

What supply and temperature range should be used?

Recommended total supply voltage is 3.3 V minimum, 5 V nominal, and 5.25 V maximum. Recommended operating free-air temperature is -40°C to 125°C, with an absolute maximum junction temperature of 150°C.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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