RFD16N06LESM N-Channel Logic Level Power MOSFET

ON Semiconductor Power_Management — specifications, applications, sourcing support and RFQ.

RFD16N06LESM N-Channel Logic Level Power MOSFET

RFQ Available Sourcing Support Alternative Matching RoHS
Part Number
RFD16N06LESM
Manufacturer
ON Semiconductor
Package
JEDEC TO-252AA
Category
Power Management
Product Type
LDO Regulator

Quick Sourcing Note

RFD16N06LESM from ON Semiconductor is a Power_Management N-Channel Logic Level Power MOSFET supplied in a JEDEC TO-252AA package. The device is rated for 60 V drain-to-source voltage and 16 A continuous drain current at Tc=25°C, with 90 W power dissipation and 0.606 W/°C derating above 25°C. Key electrical parameters include maximum 0.047 Ohm drain-to-source on resistance at VGS=5 V and ID=16 A, 1 V to 3 V gate threshold voltage, and maximum 10 µA gate-to-source leakage. Switching and gate-charge data support logic-level power switching applications within the stated voltage, current, temperature, and package limits.

Specifications

TypeDescription
Part NumberRFD16N06LESM
ManufacturerON Semiconductor
Product TypeLDO Regulator
CategoryPower Management
Package CaseJEDEC TO-252AA
Drain to Source Voltage60 V; absolute maximum rating, Tc=25°C unless otherwise specified
Drain to Gate Voltage60 V; RGS=20 kOhm, Tc=25°C unless otherwise specified
Gate to Source Voltage+10 V, -8 V; absolute maximum rating, Tc=25°C unless otherwise specified
Continuous Drain Current16 A; Tc=25°C unless otherwise specified
Pulsed Drain CurrentRefer to Peak Current Curve; pulse width limited by maximum junction temperature
Pulsed Avalanche RatingRefer to UIS Curve; Tc=25°C unless otherwise specified
Power Dissipation90 W; Tc=25°C unless otherwise specified
Power Dissipation Derating0.606 W/°C; derate above 25°C
Operating and Storage Temperature-55 to 175 °C; TJ, TSTG
Lead Soldering Temperature300 °C; leads at 0.063 in (1.6 mm) from case for 10 s
Package Body Soldering Temperature260 °C; package body for 10 s, see Techbrief 334
Drain to Source Breakdown VoltageMin 60 V; ID=250 µA, VGS=0 V, Figure 11
Gate Threshold VoltageMin 1 V, Max 3 V; VGS=VDS, ID=250 µA, Figure 10
Zero Gate Voltage Drain CurrentMax 1 µA; VDS=55 V, VGS=0 V
Zero Gate Voltage Drain CurrentMax 250 µA; VDS=50 V, VGS=0 V, TC=150°C
Gate to Source Leakage CurrentMax 10 µA; VGS=+10 V, -8 V
Drain to Source On ResistanceMax 0.047 Ohm; ID=16 A, VGS=5 V, pulse width <=300 µs, duty cycle <=2%
Turn-On TimeMax 100 ns; VDD=30 V, ID=16 A, RL=1.88 Ohm, VGS=5 V, RGS=5 Ohm
Turn-On Delay TimeTyp 11 ns; VDD=30 V, ID=16 A, RL=1.88 Ohm, VGS=5 V, RGS=5 Ohm
Rise TimeTyp 60 ns; VDD=30 V, ID=16 A, RL=1.88 Ohm, VGS=5 V, RGS=5 Ohm
Turn-Off Delay TimeTyp 48 ns; VDD=30 V, ID=16 A, RL=1.88 Ohm, VGS=5 V, RGS=5 Ohm
Fall TimeTyp 35 ns; VDD=30 V, ID=16 A, RL=1.88 Ohm, VGS=5 V, RGS=5 Ohm
Turn-Off TimeMax 115 ns; VDD=30 V, ID=16 A, RL=1.88 Ohm, VGS=5 V, RGS=5 Ohm
Total Gate ChargeTyp 51 nC, Max 62 nC; VGS=0 V to 10 V, VDD=48 V, ID=16 A, RL=3 Ohm
Gate Charge at 5 VTyp 29 nC, Max 35 nC; VGS=0 V to 5 V, VDD=48 V, ID=16 A, RL=3 Ohm
Threshold Gate ChargeTyp 1.8 nC, Max 2.6 nC; VGS=0 V to 1 V
Input CapacitanceTyp 1350 pF; VDS=25 V, VGS=0 V, f=1 MHz
Output CapacitanceTyp 300 pF; VDS=25 V, VGS=0 V, f=1 MHz
Reverse Transfer CapacitanceTyp 90 pF; VDS=25 V, VGS=0 V, f=1 MHz
Thermal Resistance Junction to CaseMax 1.65 °C/W; electrical specifications, TC=25°C unless otherwise specified
Thermal Resistance Junction to AmbientMax 80 °C/W; TO-252AA package
Source to Drain Diode VoltageMax 1.5 V; ISD=16 A, pulse width <=300 µs, duty cycle <=2%
Diode Reverse Recovery TimeMax 125 ns; ISD=16 A, dISD/dt=100 A/µs
Orderable Part NumberRFD16N06LESM9A; ordering information table
PackageTO-252AA; ordering information table
Brand16N06LE; ordering information table
Datasheet Statusrequest_only

Product Overview

RFD16N06LESM is an ON Semiconductor N-Channel Logic Level Power MOSFET in the Power_Management category. It is specified in a JEDEC TO-252AA package, with ordering information listing RFD16N06LESM9A, package TO-252AA, and brand marking 16N06LE.

The device has a 60 V drain-to-source absolute maximum rating and a 16 A continuous drain current rating at Tc=25°C. Its gate-to-source voltage rating is +10 V and -8 V, while the drain-to-source breakdown voltage is specified as a minimum of 60 V at ID=250 µA and VGS=0 V.

Electrical data includes a gate threshold voltage range of 1 V to 3 V, maximum 0.047 Ohm on resistance at ID=16 A and VGS=5 V, and typical capacitances of 1350 pF input, 300 pF output, and 90 pF reverse transfer at VDS=25 V. Thermal and assembly limits include -55°C to 175°C operating and storage temperature, 300°C lead soldering temperature for 10 s, and 260°C package body soldering temperature for 10 s.

Key Features

  • 60 V drain-to-source absolute maximum rating
  • 16 A continuous drain current at Tc=25°C
  • Maximum 0.047 Ohm on resistance at VGS=5 V
  • Logic-level gate threshold from 1 V to 3 V
  • 90 W power dissipation at Tc=25°C
  • -55°C to 175°C operating and storage range
  • Typical 51 nC total gate charge to 10 V
  • Maximum 100 ns turn-on time under stated test conditions
  • Maximum 115 ns turn-off time under stated test conditions
  • TO-252AA package with 80 °C/W junction-to-ambient resistance

Typical Applications

  • Logic-level power switching
  • 60 V MOSFET power stages
  • 16 A drain-current circuits
  • TO-252AA surface-mount designs
  • Gate-driven load switching
  • Power_Management MOSFET replacement sourcing

Procurement Notes

When requesting a quote for RFD16N06LESM, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.

If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.

For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.

FAQ

What type of device is RFD16N06LESM?

RFD16N06LESM is an ON Semiconductor N-Channel Logic Level Power MOSFET in the Power_Management category. The extracted datasheet facts identify the package case as JEDEC TO-252AA and list TO-252AA in the ordering information.

What are the main voltage and current ratings?

The device has a 60 V drain-to-source absolute maximum rating and a 16 A continuous drain current rating at Tc=25°C. The drain-to-source breakdown voltage is specified as a minimum of 60 V at ID=250 µA and VGS=0 V.

What on-resistance is specified for this MOSFET?

The drain-to-source on resistance is specified as maximum 0.047 Ohm at ID=16 A and VGS=5 V. The datasheet condition also states pulse width <=300 µs and duty cycle <=2% for this measurement.

What thermal limits are listed for RFD16N06LESM?

The operating and storage temperature range is -55°C to 175°C. Thermal resistance is specified as maximum 1.65 °C/W from junction to case and maximum 80 °C/W from junction to ambient for the TO-252AA package.

Technical Review & Sourcing Note

Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.

This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.

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