Specifications
| Type | Description |
|---|---|
| Part Number | RFD16N06LESM |
| Manufacturer | ON Semiconductor |
| Product Type | LDO Regulator |
| Category | Power Management |
| Package Case | JEDEC TO-252AA |
| Drain to Source Voltage | 60 V; absolute maximum rating, Tc=25°C unless otherwise specified |
| Drain to Gate Voltage | 60 V; RGS=20 kOhm, Tc=25°C unless otherwise specified |
| Gate to Source Voltage | +10 V, -8 V; absolute maximum rating, Tc=25°C unless otherwise specified |
| Continuous Drain Current | 16 A; Tc=25°C unless otherwise specified |
| Pulsed Drain Current | Refer to Peak Current Curve; pulse width limited by maximum junction temperature |
| Pulsed Avalanche Rating | Refer to UIS Curve; Tc=25°C unless otherwise specified |
| Power Dissipation | 90 W; Tc=25°C unless otherwise specified |
| Power Dissipation Derating | 0.606 W/°C; derate above 25°C |
| Operating and Storage Temperature | -55 to 175 °C; TJ, TSTG |
| Lead Soldering Temperature | 300 °C; leads at 0.063 in (1.6 mm) from case for 10 s |
| Package Body Soldering Temperature | 260 °C; package body for 10 s, see Techbrief 334 |
| Drain to Source Breakdown Voltage | Min 60 V; ID=250 µA, VGS=0 V, Figure 11 |
| Gate Threshold Voltage | Min 1 V, Max 3 V; VGS=VDS, ID=250 µA, Figure 10 |
| Zero Gate Voltage Drain Current | Max 1 µA; VDS=55 V, VGS=0 V |
| Zero Gate Voltage Drain Current | Max 250 µA; VDS=50 V, VGS=0 V, TC=150°C |
| Gate to Source Leakage Current | Max 10 µA; VGS=+10 V, -8 V |
| Drain to Source On Resistance | Max 0.047 Ohm; ID=16 A, VGS=5 V, pulse width <=300 µs, duty cycle <=2% |
| Turn-On Time | Max 100 ns; VDD=30 V, ID=16 A, RL=1.88 Ohm, VGS=5 V, RGS=5 Ohm |
| Turn-On Delay Time | Typ 11 ns; VDD=30 V, ID=16 A, RL=1.88 Ohm, VGS=5 V, RGS=5 Ohm |
| Rise Time | Typ 60 ns; VDD=30 V, ID=16 A, RL=1.88 Ohm, VGS=5 V, RGS=5 Ohm |
| Turn-Off Delay Time | Typ 48 ns; VDD=30 V, ID=16 A, RL=1.88 Ohm, VGS=5 V, RGS=5 Ohm |
| Fall Time | Typ 35 ns; VDD=30 V, ID=16 A, RL=1.88 Ohm, VGS=5 V, RGS=5 Ohm |
| Turn-Off Time | Max 115 ns; VDD=30 V, ID=16 A, RL=1.88 Ohm, VGS=5 V, RGS=5 Ohm |
| Total Gate Charge | Typ 51 nC, Max 62 nC; VGS=0 V to 10 V, VDD=48 V, ID=16 A, RL=3 Ohm |
| Gate Charge at 5 V | Typ 29 nC, Max 35 nC; VGS=0 V to 5 V, VDD=48 V, ID=16 A, RL=3 Ohm |
| Threshold Gate Charge | Typ 1.8 nC, Max 2.6 nC; VGS=0 V to 1 V |
| Input Capacitance | Typ 1350 pF; VDS=25 V, VGS=0 V, f=1 MHz |
| Output Capacitance | Typ 300 pF; VDS=25 V, VGS=0 V, f=1 MHz |
| Reverse Transfer Capacitance | Typ 90 pF; VDS=25 V, VGS=0 V, f=1 MHz |
| Thermal Resistance Junction to Case | Max 1.65 °C/W; electrical specifications, TC=25°C unless otherwise specified |
| Thermal Resistance Junction to Ambient | Max 80 °C/W; TO-252AA package |
| Source to Drain Diode Voltage | Max 1.5 V; ISD=16 A, pulse width <=300 µs, duty cycle <=2% |
| Diode Reverse Recovery Time | Max 125 ns; ISD=16 A, dISD/dt=100 A/µs |
| Orderable Part Number | RFD16N06LESM9A; ordering information table |
| Package | TO-252AA; ordering information table |
| Brand | 16N06LE; ordering information table |
| Datasheet Status | request_only |
Product Overview
RFD16N06LESM is an ON Semiconductor N-Channel Logic Level Power MOSFET in the Power_Management category. It is specified in a JEDEC TO-252AA package, with ordering information listing RFD16N06LESM9A, package TO-252AA, and brand marking 16N06LE.
The device has a 60 V drain-to-source absolute maximum rating and a 16 A continuous drain current rating at Tc=25°C. Its gate-to-source voltage rating is +10 V and -8 V, while the drain-to-source breakdown voltage is specified as a minimum of 60 V at ID=250 µA and VGS=0 V.
Electrical data includes a gate threshold voltage range of 1 V to 3 V, maximum 0.047 Ohm on resistance at ID=16 A and VGS=5 V, and typical capacitances of 1350 pF input, 300 pF output, and 90 pF reverse transfer at VDS=25 V. Thermal and assembly limits include -55°C to 175°C operating and storage temperature, 300°C lead soldering temperature for 10 s, and 260°C package body soldering temperature for 10 s.
Key Features
- 60 V drain-to-source absolute maximum rating
- 16 A continuous drain current at Tc=25°C
- Maximum 0.047 Ohm on resistance at VGS=5 V
- Logic-level gate threshold from 1 V to 3 V
- 90 W power dissipation at Tc=25°C
- -55°C to 175°C operating and storage range
- Typical 51 nC total gate charge to 10 V
- Maximum 100 ns turn-on time under stated test conditions
- Maximum 115 ns turn-off time under stated test conditions
- TO-252AA package with 80 °C/W junction-to-ambient resistance
Typical Applications
- Logic-level power switching
- 60 V MOSFET power stages
- 16 A drain-current circuits
- TO-252AA surface-mount designs
- Gate-driven load switching
- Power_Management MOSFET replacement sourcing
Procurement Notes
When requesting a quote for RFD16N06LESM, buyers should confirm the manufacturer, package or case, required quantity, target date code, compliance documents, packing method, destination country and expected delivery schedule.
If alternatives are acceptable, buyers should share the approved vendor list, required electrical or optical limits, package constraints and qualification requirements. Any alternative part should be reviewed by the buyer's engineering team before production use.
For power IC and power device sourcing, voltage rating, current rating, power dissipation, package thermal performance, protection features, qualification grade and application conditions should be reviewed before approval.
FAQ
What type of device is RFD16N06LESM?
RFD16N06LESM is an ON Semiconductor N-Channel Logic Level Power MOSFET in the Power_Management category. The extracted datasheet facts identify the package case as JEDEC TO-252AA and list TO-252AA in the ordering information.
What are the main voltage and current ratings?
The device has a 60 V drain-to-source absolute maximum rating and a 16 A continuous drain current rating at Tc=25°C. The drain-to-source breakdown voltage is specified as a minimum of 60 V at ID=250 µA and VGS=0 V.
What on-resistance is specified for this MOSFET?
The drain-to-source on resistance is specified as maximum 0.047 Ohm at ID=16 A and VGS=5 V. The datasheet condition also states pulse width <=300 µs and duty cycle <=2% for this measurement.
What thermal limits are listed for RFD16N06LESM?
The operating and storage temperature range is -55°C to 175°C. Thermal resistance is specified as maximum 1.65 °C/W from junction to case and maximum 80 °C/W from junction to ambient for the TO-252AA package.
Technical Review & Sourcing Note
Prepared by LDeepAI Component Sourcing Team. Reviewed for RFQ, documentation and alternative sourcing use. Last updated: July 13, 2026.
This page is based on manufacturer datasheet information and LDeepAI sourcing review. Specifications should be verified against the official manufacturer datasheet before final procurement or design approval. Final electrical, optical and reliability approval should be confirmed by the buyer's engineering team.